Single N-channel Trench MOSFET 150V, 28A, 46mΩ ㄹ Features General Description The MDD1051 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1051 is suitable device for Synchronous Rectification For Server and general purpose applications. VDS = 150V ID = 28A @VGS = 10V RDS(ON) (MAX) < 46.0mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested D G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 150 V VGSS ±20 V o TC=25 C (Silicon Limited) Continuous Drain Current (1) 28 ID o TC=100 C 18 Pulsed Drain Current IDM 110 TC=25oC Power Dissipation A 70 PD o W TC=100 C 28 Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range EAS 50.0 TJ, Tstg -55~150 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Symbol (1) Thermal Resistance, Junction-to-Case Apr. 2014. Version 1.0 1 Rating RθJA 50 RθJC 1.8 Unit o C/W MagnaChip Semiconductor Ltd. MDD1051 – Single N-Channel Trench MOSFET 150V MDD1051 Part Number Temp. Range MDD1051RH o -55~150 C Package Packing Rohs Status D-PAK Tape & Reel Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 150 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.2 2.2 3.2 Drain Cut-Off Current IDSS VDS = 120V, VGS = 0V - - 1.0 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1 RDS(ON) VGS = 10V, ID = 20A - 37.0 46.0 mΩ gfs VDS = 10V, ID = 20A - 30 - S - 19.6 - - 5.2 - Drain-Source ON Resistance Forward Transconductance V μA Dynamic Characteristics Total Gate Charge Qg(10V) VDS = 75V, ID = 20A, VGS = 10V Gate-Source Charge Qgs Gate-Drain Charge Qgd - 5.2 - Input Capacitance Ciss - 1270 - - 30 - Reverse Transfer Capacitance Crss VDS = 40V, VGS = 0V, f = 1.0MHz nC pF Output Capacitance Coss - 385 - Turn-On Delay Time td(on) - 15 - - 10 - - 20 - - 5 - - 0.80 1.3 - 73.0 - ns - 245.0 - nC Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10V, VDS = 75V, ID = 20A , RG = 3.0Ω tf ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 20A, VGS = 0V IF = 20A, dl/dt = 100A/μs V Note : 1. 2. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited EAS is tested at starting Tj = 25℃ , L = 1.0mH, IAS =10.0A, VDD = 50V, VGS = 10V Apr. 2014. Version 1.0 2 MagnaChip Semiconductor Ltd. MDD1051 – Single N-Channel Trench MOSFET 150V Ordering Information 60 VGS = 10V 6.0V 40 ID, Drain Current [A] 8.0V Drain-Source On-Resistance [mΩ] 45 35 4.5V 30 25 4.0V 20 15 10 3.5V 55 50 45 40 VGS = 10V 35 30 25 5 3.0V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 20 5.0 0 5 10 15 VDS, Drain-Source Voltage [V] 25 30 35 40 45 50 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 200 2.4 ※ Notes : 2.2 ※ Notes : 180 1. VGS = 10 V 2. ID = 10.0 A 2.0 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 20 ID, Drain Current [A] 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 10.0A 160 140 120 100 80 TJ = 25 60 ℃ 40 20 0.4 0.2 -50 0 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 50 ※ Notes : 45 ※ Notes : VGS = 0V IDR, Reverse Drain Current [A] VDS = 10V ID, Drain Current [A] 40 35 30 TJ=25 ℃ 25 20 15 10 1 10 TJ=25 ℃ 0 10 5 0 0 1 2 3 4 5 6 0.3 7 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.5 Transfer Characteristics Apr. 2014. Version 1.0 0.4 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDD1051 – Single N-Channel Trench MOSFET 150V 50 ※ Note : ID = 20A 1400 VDS = 75V Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss VGS, Gate-Source Voltage [V] 8 Capacitance [pF] 1200 6 4 1000 800 Coss 600 400 ※ Notes ; 2 200 1. VGS = 0 V 2. f = 1 MHz Crss 0 0 0 2 4 6 8 10 12 14 16 18 0 20 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 30 10 27 2 24 10 1 10 ms Operation in This Area is Limited by R DS(on) 10 ID, Drain Current [A] ID, Drain Current [A] 1 ms 100 ms 0 1s 10s DC Single Pulse TJ=Max rated TC=25 21 18 15 12 9 6 3 ℃ 10 -1 10 -1 10 0 10 1 2 10 10 0 25 3 50 75 100 125 150 TC, Case Temperature [ ] VDS, Drain-Source Voltage [V] ℃ Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 10 0.2 10 0.1 0.05 0.02 -1 10 0.01 Zθ JC , Thermal Response D=0.5 0 -2 single pulse 10 ※ Notes : Duty Factor, D=t 1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Apr. 2014. Version 1.0 4 MagnaChip Semiconductor Ltd. MDD1051 – Single N-Channel Trench MOSFET 150V 1600 10 MDD1051 – Single N-Channel Trench MOSFET 150V Package Dimension D-PAK (TO-252) Dimensions are in millimeters, unless otherwise specified Apr. 2014. Version 1.0 5 MagnaChip Semiconductor Ltd. MDD1051 – Single N-Channel Trench MOSFET 150V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Apr. 2014. Version 1.0 6 MagnaChip Semiconductor Ltd.