MITSUBISHI POWER MOSFET ARY FL12KM-7A MIN RELI . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL12KM-7A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 ➁ 2.6 ± 0.2 ➀➁➂ ¡10V DRIVE ¡VDSS ................................................................................ 350V ¡rDS (ON) (MAX) ................................................................ 0.4Ω ¡ID ............................................................................................ 7A ¡Viso ................................................................................ 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ➀ GATE ➁ DRAIN ➂ SOURCE ➀ ➂ TO-220FN APPLICATION Inverter type fluorescent light sets, SMPS MAXIMUM RATINGS (Tc = 25°C) Symbol Parameter Ratings Unit 350 ±30 V V 12 36 A A 12 35 A W Channel temperature –55 ~ +150 °C Storage temperature Isolation voltage AC for 1minute, Terminal to case –55 ~ +150 2000 °C V Weight Typical value 2.0 g VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA PD Avalanche current (Pulsed) Maximum power dissipation Tch Tstg Viso — Conditions VGS = 0V VDS = 0V L = 200µH Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FL12KM-7A . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS V (BR) GSS Drain-source breakdown voltage Gate-source breakdown voltage ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V IGSS IDSS Gate-source leakage current Drain-source leakage current VGS (th) Gate-source threshold voltage rDS (ON) VDS (ON) Drain-source on-state resistance ID = 6A, VGS = 10V Drain-source on-state voltage ID = 6A, VGS = 10V y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) Thermal resistance Limits Test conditions Unit Min. Typ. Max. 350 ±30 — — — — V V VGS = ±25V, VDS = 0V VDS = 350V, VGS = 0V — — — — ±10 1.0 µA mA ID = 1mA, VDS = 10V 2.0 3.0 4.0 V — — 0.32 1.90 0.40 2.40 Ω V ID = 6A, VDS = 10V — — 10 1050 — — S pF VDS = 25V, VGS = 0V, f = 1MHz — — 150 25 — — pF pF — — 20 30 — — ns ns — 160 — ns IS = 6A, VGS = 0V — — 60 1.5 — 2.0 ns V Channel to case — — 3.57 °C/W VDD = 150V, ID = 6A, VGS = 10V, R GEN = RGS = 50Ω PERFORMANCE CURVES MAXIMUM SAFE OPERATING AREA 40 7 5 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 30 20 10 3 2 tw = 10µs 101 100µs 7 5 3 2 1ms 100 10ms 7 5 TC = 25°C Single Pulse 3 2 100ms 101 0 50 150 7 200 DC 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS =20V,10V,8V,6V 20 DRAIN CURRENT ID (A) 100 Tc = 25°C Pulse Test 16 VGS = 20V,10V,8V,6V 10 12 5V 8 4 Tc = 25°C Pulse Test DRAIN CURRENT ID (A) 0 8 5V 6 4 PD = 35W 2 PD = 35W 4V 4V 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FL12KM-7A . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 Tc = 25°C Pulse Test 16 ID = 24A 12 8 12A 4 6A 0 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 20 Tc = 25°C Pulse Test 0.8 VGS = 20V 0.6 10V 0.4 0.2 0 10-1 2 3 5 7100 2 3 5 7101 2 3 5 7102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 20 16 12 Tc = 25°C VDS = 10V Pulse Test 8 4 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 7 5 3 2 101 7 5 2 0 0 4 8 12 16 100 0 10 20 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 5 103 3 Ciss 7 5 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) TC = 25°C 75°C 125°C GATE-SOURCE VOLTAGE VGS (V) 3 2 3 2 102 7 5 3 2 Crss Coss Tch = 25°C f = 1MHZ VGS = 0V 101 7 5 3 VDS =10V Pulse Test 3 100 2 3 5 7101 2 3 2 td(off) 102 tf 7 5 tr 3 td(on) 2 Tch = 25°C VGS = 10V VDD = 150V RGEN = RGS = 50Ω 101 5 7 102 2 3 5 7103 DRAIN-SOURCE VOLTAGE VDS (V) 7 5 100 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FL12KM-7A . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 50V 16 100V 200V 12 Tch = 25°C ID =12A 8 4 0 0 20 40 60 80 16 TC = 125°C 12 75°C 4 0 100 1.6 2.4 3.2 4.0 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 7 5 3 2 100 7 5 VGS = 10V ID = 6A Pulse Test 3 2 –50 0 50 100 4.0 VDS = 10V ID = 1mA 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 1.2 1.0 VGS = 0V ID = 1mA 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (°C/W) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) 0.8 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 101 0.4 0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 10–1 25°C 8 GATE CHARGE Qg (nC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) VGS = 0V Pulse Test VDS = SOURCE CURRENT IS (A) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 2 0.5 100 0.2 7 5 0.1 3 2 10–1 7 5 3 2 0.05 0.02 PDM 0.01 tw Single Pulse T D= tw T 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Aug. 1999