WINNERJOIN BAW56DW Switching diode Datasheet

RoHS
BAW56DW
D
T
,. L
SOT-363
BAW56DW
SWITCHING DIODE
FEATURES
Power dissipation
PD:
200
mW (Tamb=25℃)
Collector current
IF:
150 mA
Collector-base voltage
VR:
75
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
R
T
O
IC
C
O
N
MAKING: KJC
C
E
L
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
E
Reverse breakdown voltage
J
E
Reverse voltage leakage current
Forward voltage
W
Junction capacitance
Reveres recovery time
WEJ ELECTRONIC CO.
Symbol
V(BR) R
unless otherwise specified)
Test
conditions
IR= 2.5µA
MIN
MAX
75
UNIT
V
VR=75V
2.5
VR=20V
0.025
VF
IF=1mA
IF=10mA
IF=50mA
IF=150mA
715
855
1000
1250
mV
Cj
VR=0V, f=1MHz
2
pF
4
nS
IR
µA
IF=IR=10mA
trr
Irr=0.1×IR
RL=100Ω
Http:// www.wej.cn
E-mail:[email protected]
RoHS
Typical Characteristics
BAW56DW
R
T
J
E
O
IC
C
D
T
,. L
O
N
C
E
L
E
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
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