, L)n.c. tJ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BUV47, BUV47A NPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar Construction SOT-92 PACKAGE (TO P VIEW) 9 A Continuous Collector Current 1000 Volt Blocking Capability B C \ 1 C C tc 3 / Pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-emitter voltage (VBE = -2.5 V) Collector-emitter voltage (RBE = 10 fi) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1 ) Continuous base current SYMBOL BUV47 BUV47A BUV47 BUV47A 850 VCEX Peak base current Continuous device dissipation at (or below) 25°C case temperature Ptot Operating junction temperature range NOTE 1000 400 VCEO Ic 'CM IB 'BM Storage temperature range 1000 850 VCER BUV47 BUV47A VALUE 450 UNIT V V V 9 A 15 A 3 A 6 A 120 W TJ -65to+150 °C Ts,g -65 to +150 °c 1: This value applies for tp < 5 ms, duty cycle < 2%. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter CEO(sus) sustaining V0|tage (BR)EBO breakdown CES Base-emitter voltage lc = 200 mA 1 = 25 mH IE = lc = 0 50 mA (see Note 2) BUV47 VCE = 850V VBE = 0 BUV47 VCE = 1000V V6E = 0 BUV47A cut-off current V C E = 850V VBE = 0 Collector-emitter cut-off current 'EBO current CE(sat) Collector-emitter saturation voltage Emitter cut-off Base-emitter saturation voltage Current gain ' bandwidth product Cob Output capacitance VCE = 1 000 V VBE = 0 V C E = 850V RBE = 10Q VCE = 1000V RBE = 10n V C E = 850V VCE = 1 000 V RBE = 10n RBE = 1 0 O VEB = lc = 0 MAX 400 30 0.15 0.15 1.5 1.5 0.4 0.4 3.0 3.0 BUV47 Tc = 1 25"C BUV47A BUV47 BUV47A TC = 125°C Tc = 1 25°C UNIT V 7 (see Note 3) TC = 125°C TYP 450 Collector-emitter 'CER BE(sat) WIN TEST CONDITIONS BUV47 BUV47A V mA mA 1 mA !;: 2.5 A I:: I" ^™»*««v 1.5 3.0 V IB = 1.6 V 5V 1A lc = 5A (see Notes 3 and 4) VCE = 10V l c = 0.5 A f= 1 MHz V CB = 20V lc = 0 f = 0.1 MHz 8 MHz 105 PF NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 us, duty cycle < 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MIN PARAMETER ReJC TYP Junction to case thermal resistance MAX UNIT 1 "C/W MAX UNIT 1.0 3.0 us us us resistive-load-switching characteristics at 25°C case temperature Turn on time Is Storage time tf Fall time MIN TEST CONDITIONS t PARAMETER ton V - 150 V TYP (see Figures 1 and 2) 0.8 * Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) TEST CONDITIONS PARAMETER MIN t tsv Voltage storage time ic = 5A iB(0n) = i A If, Current fall time TC = 100°C (see Figures 3 and 4) vBE(off) = -5V TYP MAX UNIT 4.0 0.4 us us BUV47, BUV47A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION +25 V tp = 20 us Duty cycle = 1 % V-) = 15 V, Source Impedance = 50 a Figure 1. Resistive-Load Switching Test Circuit C-f-90% 90%-VE A-B = td B - C = tr B •+• 10% 10%-\-F E-F = t, 0% D - E = ts A - C = ton D - F = toff >2A/ns 0% B(off) Figure 2. Resistive-Load Switching Waveforms BUV47, BU\M7A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION 33 a VGen 68 Q Vclamp=400V Adjust pw to obtain lc For lc < 6 A Vcc = 50 V Forlc>6A VCC = 100V 100 n BE(off) Figure 3. Inductive-Load Switching Test Circuit 'B(on) A (90%) A - B = tsv Base Current B - C = trv D - E = I,; E - F = tti C-f-90% B - E = t,n B •/- 10% Collector Voltage CE D (90%) E (10%) 'C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 ft Cin < 11.5 pF. B. Resistors must be noninductive types. Figure 4. Inductive-Load Switching Waveforms