星合电子 LL101A THUR LL101C ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ SMALL SIGNAL SCHOTTKY DIODES FEATURES For general purpose applications MiniMELF The LL101 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications These diodes are also available in the DO-35 case with the type 0.063(1.6) 0.055(1.4) designation SD101A to SD101C. High temperature soldering guaranteed:260℃/10 seconds at terminals 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) MECHANICAL DATA Case: MiniMELF glass case(SOD-80 ) Dimensions in inches and (millimeters) Polarity: Color band denotes cathode end Weight: Approx. 0.05 gram ABSOLUTE RATINGS(LIMITING VALUES) Value Symbols VRRM VRRM VRRM Ptot IFSM TJ TSTG LL101A LL101B LL101C Peak Reverse Voltage Power Dissipation (infinite Heat Sink) Maximum Single cycle surge 10ms square wave Junction temperature Storage Temperature Range Units 60 50 40 2.0 V V mW A 125 C -55 to+150 C 400 1) 1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Min. Symbols Reverse breakover voltage at IR=10mA LL101A LL101B LL101C Leakage current at VR=50V VR=40V VR=30V LL101A LL101B LL101C Forward voltage drop at IF=1mA LL101A LL101B LL101C LL101A LL101B LL101C VF VF VF VF VF VF LL101A LL101B LL101C CJ CJ CJ IF=15mA Junction Capacitance at VR=0V ,f=1MHz Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR Typ. Max. 200 200 200 0.41 0.4 0.39 1 0.95 0.9 2.0 2.1 2.2 1 trr Unis V V V 60 50 40 VRRM VRRM VRRM IR IR IR nA nA nA V V V V V V pF pF pF ns 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７ 星合电子 LL101A THUR LL101C ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ SMALL SIGNAL SCHOTTKY DIODES Figure 2. Typical forward conduction curve of combination Schottky barrier and PN junction guard ring Figure 1. Typical variation of forward. current vs.fwd. Voltage for primary conduction through the schottky barrier mA mA 100 10 5 A B A B C 2 C 80 1 5 60 2 IF IF 40 0.1 5 20 2 0.01 0.5 0 1V 0.5 0 VF Figure 4. Typical capacitance curve as a function of reverse voltage Figure 3.Typical variation of reverse current at versus temperature pF μ A 100 1V VF 2 150 C 5 125 C 2 100 C 10 5 75 C 2 IR B A 1 C 1 50 C C 5 2 0.1 25 C 5 2 0.01 0 10 20 30 40 50V 0 VR 10 20 30 40 50V VR 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７