APTM120UM70FAG Single switch MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control SK S D Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance DK G S D SK Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 171 126 684 ±30 80 5000 24 50 3200 Unit V A V mΩ W A July, 2006 G mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120UM70FAG Rev 1 DK VDSS = 1200V RDSon = 70mΩ typ @ Tj = 25°C ID = 171A @ Tc = 25°C APTM120UM70FAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 1200V T j = 25°C VGS = 0V,VDS = 1000V T j = 125°C VGS = 10V, ID = 85.5A VGS = VDS, ID = 30mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 70 3 Min VGS = 10V VBus = 600V ID = 171A Typ 43.5 6.6 1.2 1650 Unit Max Unit mA mΩ V nA nF nC 1074 20 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 171A R G =0.8Ω 17 62 7.6 mJ 6.9 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 171A, R G = 0.8Ω Test Conditions ns 245 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 171A, R G = 0.8Ω 13.8 mJ 8.5 Min Typ Tj = 25°C Max 171 126 1.3 18 375 Tj = 125°C 860 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 171A IS = - 171A VR = 600V diS/dt = 600A/µs Max 1.5 6 80 5 ±600 192 Source - Drain diode ratings and characteristics Symbol IS Typ Tj = 25°C 12 Tj = 125°C 54 Unit A V V/ns ns µC July, 2006 IDSS Characteristic X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 171A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–6 APTM120UM70FAG Rev 1 Symbol APTM120UM70FAG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque 2500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.025 150 125 100 5 3.5 280 Unit °C/W V °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM120UM70FAG Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTM120UM70FAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.03 0.025 0.9 0.02 0.7 0.015 0.5 0.01 0.3 0.005 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 480 VGS =15, 10V 360 300 6V 240 5.5V 180 120 VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 420 7V ID, Drain Current (A) 5V 60 360 300 240 T J=-55°C 180 T J=25°C 120 60 4.5V 0 0 5 10 15 20 25 TJ=125°C 0 30 0 ID, DC Drain Current (A) VGS=10V 1.1 V GS=20V 1 4 5 6 7 0.9 0.8 135 90 45 0 0 60 120 180 240 300 360 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance 1.2 3 180 Normalized to VGS =10V @ 85.5A 1.3 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 4–6 APTM120UM70FAG Rev 1 I D, Drain Current (A) 420 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=85.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area limited by RDS on 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs 100 1ms 10ms 10 Single pulse TJ=150°C TC=25°C 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss Crss 1000 14 ID=171A TJ=25°C 12 10 VDS=240V VDS=600V 8 VDS=960V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 420 840 1260 1680 2100 Gate Charge (nC) July, 2006 0 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTM120UM70FAG Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120UM70FAG APTM120UM70FAG Delay Times vs Current Rise and Fall times vs Current 100 t d(off) 250 200 VDS=800V RG=0.8Ω T J=125°C L=100µH 150 100 50 VDS=800V RG=0.8Ω T J=125°C L=100µH 80 tr and tf (ns) td(on) and td(off) (ns) 300 60 40 tr 20 td(on) 0 0 60 90 120 150 180 210 240 270 60 90 ID, Drain Current (A) 36 V DS =800V RG =0.8Ω T J=125°C L=100µH 20 16 Switching Energy (mJ) Switching Energy (mJ) 120 150 180 210 240 270 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 24 Eon Eoff 12 8 4 0 V DS=800V ID=171A T J=125°C L=100µH 30 24 Eoff 18 Eon 12 Eoff 6 60 90 120 150 180 210 240 270 ID, Drain Current (A) 0 1 2 3 4 5 6 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 150 IDR, Reverse Drain Current (A) 175 Frequency (kHz) tf ZVS 125 Hard switching 100 ZCS VDS=800V D=50% RG=0.8Ω T J=125°C T C=75°C 75 50 25 0 60 80 100 120 140 ID, Drain Current (A) T J=25°C 10 1 160 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM120UM70FAG Rev 1 July, 2006 40 T J=150°C 100