TR5270M™ LEDs CxxxTR5270M-Sxx000 (175-μm) CxxxTR5270M-Sxx000-3 (250-μm) Data Sheet Cree’s TR5270M LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting and general-illumination markets. The TR5270M LEDs are among the brightest in the top-view market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The TR5270M is available in two chip thicknesses: 175 μm and 250 μm. The 250-μm-thick version offers 5% improvement brightness over the 175-μm version due the increased bevel area. The metal backside allows for eutectic die attach and enables superior performance from improved thermal management. The design is optimally suited for industry-standard top-view packages. FEATURES APPLICATIONS • • • Rectangular LED RF Performance – 450 nm – 200 mW min – 460 nm – 180 mW min Large LCD Backlighting – High Reliability - Eutectic, Solder Paste or Television • General Illumination • Medium LCD Backlighting Preforms Attach – Portable PCs • Low Forward Voltage – 3.2 V Typical at 120 mA – Monitors • Maximum DC Forward Current - 250 mA • LED Video Displays • Class 2 ESD Rating • White LEDs • InGaN Junction on Thermally Conductive SiC Substrate CxxxTR5270M-Sxx000 (175-µm) Chip Diagram .CPR3EW Rev Data Sheet: Top View Die Cross Section Bottom View TR5270M LED 520 x 700 μm Cathode (-) 98-μm diameter Bottom Surface 335 x 515 μm Anode (+) 90-μm diameter Metal Back-Side 302 x 482 µm t = 175 μm Subject to change without notice. www.cree.com 1 CxxxTR5270M-Sxx000-3 (250-µm) Chip Diagram Top View Die Cross Section Bottom View TR5270M LED 520 x 700 μm Cathode (-) 98-μm diameter Bottom Surface 240 x 420 μm Anode (+) 90-μm diameter Metal Back-Side 213 x 392 µm t = 250 μm Mechanical Specifications Description CxxxTR5270M-Sxx000 (175-µm) Dimension Tolerance P-N Junction Area (μm) 446 x 643 ±35 Chip Area (μm) 520 x 700 ±35 175 ±15 Au Bond Pad Diameter Anode (μm) 90 ±10 Au Bond Pad Thicknesses (μm) 1.0 ±0.5 Au Bond Pad Diameter Cathode (μm) 98 ±10 Chip Thickness (μm) Bottom Area (μm) 335 x 515 ±45 Bottom Contact Metal (μm) 302 x 482 ±25 3.0 ±1.0 Bottom Contact Metal Thickness (μm) Mechanical Specifications Description CxxxTR5270M-Sxx000-3 (250-µm) Dimension Tolerance P-N Junction Area (μm) 446 x 643 ±35 Chip Area (μm) 520 x 700 ±35 250 ±15 Au Bond Pad Diameter Anode (μm) 90 ±10 Au Bond Pad Thicknesses (μm) 1.0 ±0.5 Au Bond Pad Diameter Cathode (μm) 98 ±10 Bottom Area (μm) 240 x 420 ±45 Bottom Contact Metal (μm) 213 x 392 ±25 3.0 ±1.0 Chip Thickness (μm) Bottom Contact Metal Thickness (μm) Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5270M are trademarks of Cree, Inc. 2 CPR3EW Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Maximum Ratings at TA = 25°C Notes 1, 3 & 4 CxxxTR5270M-Sxx00 and CxxxTR5270M-Sxx00-3 DC Forward Current 250 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 300 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +100°C Electrostatic Discharge Threshold (HBM) 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 120 mA Part Number Forward Voltage (Vf, V) C450TR5270M-Sxx000 C450TR5270M-Sxx000-3 C460TR5270M-Sxx000-3 Notes: 1. 2. 3. 4. Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. 2.7 3.2 3.5 2 20 2 21 2 20 2 21 Max If (mA) 2.7 3.2 Max Vf @Max If (V) 2.7 3.2 Max Tj (Deg C) 2.7 3.2 Max Power (W) C460TR5270M-Sxx000 Note 3 250 3.5 3.5 3.5 150 3.5 0.875 Thermal Resistance (C/W) 10 20 30 Maximum ratings are package-dependent. The above ratings were determined using lamps in chip-on-MCPCB (metal core PCB) packages for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations. (j-A) = If @ must Tambnot exceed 325°C (< Rth Tamb Tamb Assembly processing temperature 5 seconds). Product resistance to electrostatic250 discharge (ESD) according to the ESD using a rapid 25HBM is measured by simulating 25 25 avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. 250 141.25 132.5 123.75 All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 120 0 150at higher currents. Typical 150 values given are 150 mA within the maximum ratings shown above. Efficiency decreases within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and clear epoxy die attach). Optical characteristics measured in an integrating sphere using Illuminance E. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. Maximum Forward Current (mA) 300 250 200 150 Rth j-a = 10 Rth j-a = 20 Rth j-a = 30 Rth j-a = 40 100 50 C/W C/W C/W C/W 0 50 75 100 125 150 175 Ambient Temperature (C) Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5270M are trademarks of Cree, Inc. 3 CPR3EW Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxTR5270M-Sxx00 Radiant Flux (mW) Radiant Flux (mW) Radiant Flux (mW) Radiant Flux (mW) LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxTR5270M-Sxxxxx or CxxxTR5270M-Sxxxxx-3 ) orders may be filled with any or all bins (CxxxTR5270M-xxxx or CXXXTR5270M-xxxx-3) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 120 mA. C450TR5270M-S20000 (175-µm thick) C450TR5270M-0209 C450TR5270M-0210 C450TR5270M-0211 C450TR5270M-0212 C450TR5270M-0205 C450TR5270M-0206 C450TR5270M-0207 C450TR5270M-0208 220 200 445 447.5 450 Dominant Wavelength (nm) 452.5 455 C460TR5270M-S18000 (175-µm thick) C460TR5270M-0205 C460TR5270M-0206 C460TR5270M-0207 C460TR5270M-0208 C460TR5270M-0201 C460TR5270M-0202 C460TR5270M-0203 C460TR5270M-0204 200 180 455 457.5 460 462.5 465 Dominant Wavelength (nm) C450TR5270M-S21000-3 (250-µm thick) C450TR5270M-0309-3 C450TR5270M-0310-3 C450TR5270M-0311-3 C450TR5270M-0312-3 C450TR5270M-0305-3 C450TR5270M-0306-3 C450TR5270M-0307-3 C450TR5270M-0308-3 230 210 445 447.5 450 452.5 455 Dominant Wavelength (nm) C460TR5270M-S19000-3 (250-µm thick) C460TR5270M-0305-3 C460TR5270M-0306-3 C460TR5270M-0307-3 C460TR5270M-0308-3 C460TR5270M-0301-3 C460TR5270M-0302-3 C460TR5270M-0303-3 C460TR5270M-0304-3 210 190 455 457.5 460 462.5 465 Dominant Wavelength (nm) Note: The radiant-flux values above are representative of the die in a Cree 5-mm lamp. Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5270M are trademarks of Cree, Inc. 4 CPR3EW Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Relative Light Characteristic Curves 100% 50% 0% 0 50 100 150 200 250 If (mA) These are representative measurements for the TR5270M LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current Wavelength Shift vs vs Forward Forward Voltage Current Forward Current vs Forward Voltage 250 3 Dominant Wavelength If (mA) Shift (nm) 250 If (mA) 200 150 100 50 0 0 1 2 3 4 5 200 2 1 150 0 100 -1 50 -2 0 -3 0 0 1 50 2 100 Dominant Wavelength Shift vs Junction Temperature RelativeShift Intensity vs Forward Current Voltage vs Junction Temperature 6 200% 5 0.000 0.000 4 -0.050 -0.050 150% 3 -0.100 -0.100 2 -0.150 1 100% -0.200 0 -0.250 0% -0.400 5 250 -0.150 -0.200 -0.250 -0.350 25 50 0 25 50 50 75 100 Junction Temperature (°C) 100 75 150 100 125 150 200 125 250 150 -0.400 25 50 Relative Light Intensity vs Junction Temperature Wavelength Shift vs Forward Current Dominant Wavelength Shift (nm) 100% 3 95% 2 90% 1 85% 0 80% -1 75% -2 70% -3 25 50 0 50 75 100 100Temperature 150 (°C) Junction 125 150 200 250 75 100 125 150 Junction Temperature (°C) If (mA) Junction Temperature (°C) Dominant Wavelength Shift (nm) Relative Light Intensity 4 200 -0.300 -1 50% -0.300 -2 -0.350 3 150 Voltage Shift vs Junction Temperature Voltage Shift (V) Relative Light Intensity Voltage Shift (V) Shift (nm) Dominant Wavelength Vf (V) Vf (V) If (mA) Dominant Wavelength Shift vs Junction Temperature 6 5 4 3 2 1 0 -1 -2 25 50 75 100 125 150 Junction Temperature (°C) If (mA) Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5270M are trademarks of Cree, Inc. 5 CPR3EW Rev. - Relative Light Intensity vs 100% Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Junction Temperature Radiation Pattern Far Fields – TR520 This is a representative radiation pattern for the TR5270M LED product. Actual patterns will vary slightly for each chip. Copyright © 2010, Cree, Inc. (Confidential) pg. 3 Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR5270M are trademarks of Cree, Inc. 6 CPR3EW Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com