Formosa LL4148 Mini-melf switching diode - silicon epitaxial planar type Datasheet

Formosa MS
MINI-MELF Switching Diode
LL4148
Silicon epitaxial planar type
Features
SOD-80
Small surface mounting type
High reliability
High speed ( trr < 4 ns )
.146(3.7)
.130(3.3)
SOLDERABLE
ENDS
.012(.30)
.063(1.6)
.055(1.4)
Mechanical data
Dimensions in inches and (millimeters)
Case : Glass, SOD-80 (MINI-MELF)
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cat hode band
Mounting Position : Any
Weight : 0.015 gram
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)
PARAMETER
CONDITIONS
MAX.
UNIT
VRRM
100
V
VR
75
V
IFSM
2.0
A
IFRM
500
mA
IF
300
mA
IFAV
150
mA
Power dissipation
PV
500
mW
Junction temperature
Tj
175
o
C
Storage temperature
TSTG
+175
o
C
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
tp = 1 us
Repetitive peak forward voltage
Forward current
Average forward current
VR = 0
Symbol
MIN.
TYP.
-55
ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted)
PARAMETER
Forward voltage
Reverse current
Symbol
MIN.
IF = 5mA
CONDITIONS
VF
0.62
IF = 10mA
VF
VR = 20V
VR = 20V , Tj = 150 o C
VR = 75V
MAX.
UNIT
0.72
V
1.00
V
IR
25
nA
IR
50
uA
IR
5.0
uA
4.0
pF
0.86
Breakdown current
IR = 100uA , TP /T = 0.01 TP = 0.3ms
Diode capacitance
VR = 0 , f = 1MHz , VHF = 50mV
Rectification efficiency
VHF = 2V , f = 100MHz
nR
IF = IR = 10mA , IRR = 1mA
trr
8
ns
IF =10mA, VR =6V, IRR = 0.1 X IR , RL =100OHM
trr
4
ns
Reverse recovery time
V(BR)
TYP.
100
CD
V
45
%
RATING AND CHARACTERISTIC CURVES (LL4148)
FIG.3 - TYPICAL REVERSE
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
CHARACTERISTICS
Tj=25 C
1000
100
REVERSE CURRENT, (nA)
INSTANTANEOUS FORWARD CURRENT,(mA)
1000
Tj=25 C
Pulse Width 300us
1% Duty Cycle
10
Scattering Limit
Scattering Limit
100
10
1.0
1
0.1
0
.4
.8
1.2
1.6
1
2.0
10
100
REVERSE VOLTAGE
FORWARD VOLTAGE,(V)
FIG.4 - REVERSE CURRENT
VS JUNCTION TEMPERATURE
FIG.2 - TYPICAL DIODE CAPACITANCE
3.5
10
3
2.5
REVERSE CURRENT, (uA)
DIODE CAPACITANCE,(pF)
3.0
2.0
1.5
1.0
0.5
10
ES
2
=75
VR
V
10
U
AL
.V
YP
1
=7
VR
5V
0.1
1
10
100
1000
10
REVERSE VOLTAGE,(V)
10
ES
S
UE
/T
=2
0
U
AL
.V
AX
/M
0V
/
L
VA
P.
TY
VR
-1
-2
0
200
100
o
JUNCTION TEMPERATURE ( C)
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