Formosa MS MINI-MELF Switching Diode LL4148 Silicon epitaxial planar type Features SOD-80 Small surface mounting type High reliability High speed ( trr < 4 ns ) .146(3.7) .130(3.3) SOLDERABLE ENDS .012(.30) .063(1.6) .055(1.4) Mechanical data Dimensions in inches and (millimeters) Case : Glass, SOD-80 (MINI-MELF) Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cat hode band Mounting Position : Any Weight : 0.015 gram o MAXIMUM RATINGS (AT TA=25 C unless otherwise noted) PARAMETER CONDITIONS MAX. UNIT VRRM 100 V VR 75 V IFSM 2.0 A IFRM 500 mA IF 300 mA IFAV 150 mA Power dissipation PV 500 mW Junction temperature Tj 175 o C Storage temperature TSTG +175 o C Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp = 1 us Repetitive peak forward voltage Forward current Average forward current VR = 0 Symbol MIN. TYP. -55 ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted) PARAMETER Forward voltage Reverse current Symbol MIN. IF = 5mA CONDITIONS VF 0.62 IF = 10mA VF VR = 20V VR = 20V , Tj = 150 o C VR = 75V MAX. UNIT 0.72 V 1.00 V IR 25 nA IR 50 uA IR 5.0 uA 4.0 pF 0.86 Breakdown current IR = 100uA , TP /T = 0.01 TP = 0.3ms Diode capacitance VR = 0 , f = 1MHz , VHF = 50mV Rectification efficiency VHF = 2V , f = 100MHz nR IF = IR = 10mA , IRR = 1mA trr 8 ns IF =10mA, VR =6V, IRR = 0.1 X IR , RL =100OHM trr 4 ns Reverse recovery time V(BR) TYP. 100 CD V 45 % RATING AND CHARACTERISTIC CURVES (LL4148) FIG.3 - TYPICAL REVERSE FIG.1-TYPICAL FORWARD CHARACTERISTICS CHARACTERISTICS Tj=25 C 1000 100 REVERSE CURRENT, (nA) INSTANTANEOUS FORWARD CURRENT,(mA) 1000 Tj=25 C Pulse Width 300us 1% Duty Cycle 10 Scattering Limit Scattering Limit 100 10 1.0 1 0.1 0 .4 .8 1.2 1.6 1 2.0 10 100 REVERSE VOLTAGE FORWARD VOLTAGE,(V) FIG.4 - REVERSE CURRENT VS JUNCTION TEMPERATURE FIG.2 - TYPICAL DIODE CAPACITANCE 3.5 10 3 2.5 REVERSE CURRENT, (uA) DIODE CAPACITANCE,(pF) 3.0 2.0 1.5 1.0 0.5 10 ES 2 =75 VR V 10 U AL .V YP 1 =7 VR 5V 0.1 1 10 100 1000 10 REVERSE VOLTAGE,(V) 10 ES S UE /T =2 0 U AL .V AX /M 0V / L VA P. TY VR -1 -2 0 200 100 o JUNCTION TEMPERATURE ( C)