CYStech Electronics Corp. Spec. No. : C034J3 Issued Date : 2017.10.31 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB7D0N06RJ3 BVDSS ID @VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A Features 60V 56A 6.0mΩ(typ) 9.5mΩ(typ) • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit Outline TO-252(DPAK) MTB7D0N06RJ3 D D G：Gate D：Drain S：Source S G Ordering Information Device MTB7D0N06RJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB7D0N06RJ3 CYStek Product Specification Spec. No. : C034J3 Issued Date : 2017.10.31 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Pulsed Drain Current Avalanche Current @L=0.1mH Avalanche Energy @ L=1mH, ID=20A, VDD=25V Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Operating Junction and Storage Temperature Range Symbol Limits VDS VGS 60 ±20 56 35.4 12.7 8.0 10.2 6.5 224 48 200 50 20 2.5 1.0 1.7 0.7 -55~+150 ID *2 *2 *3 IDSM *3 *1 *4 IDM IAS EAS PD *2 *2 *3 PDSM *3 Tj, Tstg Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c *2 Rth,j-a *3 Value 2.5 50 75 Unit °C/W Note : *1. Pulse width limited by maximum junction temperature *2. When the device is mounted on 1 in²FR-4 board with 2 oz. copper. *3. When the device is on the minimum pad size recommended. *4. 100% tested by conditions of L=0.1mH, IAS=20A, VGS=10V, VDD=25V. *5. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. *6. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS *1 IGSS MTB7D0N06RJ3 Min. Typ. Max. Unit Test Conditions 60 1 - 0.03 21.3 - 2.5 ±100 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS =VGS, ID=250μA VDS =5V, ID=10A VGS=±20V, VDS=0V CYStek Product Specification CYStech Electronics Corp. IDSS RDS(ON) *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 6.0 9.5 1 25 8 13.5 - 46.9 9.5 9.6 17.6 17.4 54.6 10 2751 358 41 1.8 - - 0.87 23.5 18.5 40 160 1.2 - μA mΩ Spec. No. : C034J3 Issued Date : 2017.10.31 Revised Date : Page No. : 3/9 VDS =48V, VGS =0V VDS =48V, VGS =0V, Tj=125°C VGS =10V, ID=20A VGS =4.5V, ID=15A nC VDS=48V, VGS=10V, ID=20A ns VDS=30V, ID=20A, VGS=10V, RGS=3Ω pF VGS=0V, VDS=30V, f=1MHz Ω f=1MHz A V ns nC IS=20A, VGS=0V IF=20A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTB7D0N06RJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C034J3 Issued Date : 2017.10.31 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 100 ID, Drain Current(A) 80 BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V,6V 90 5V 70 60 4V 50 40 3.5V 30 20 VGS=3V 10 1.2 1 0.8 ID=250μA, VGS=0V 0.6 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=4.5V 10V 10 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.1 1 10 ID, Drain Current(A) 0 100 4 6 8 10 12 14 16 IDR , Reverse Drain Current(A) 18 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 50 ID=20A R DS(ON), Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 2 40 30 20 10 2 VGS=10V, ID=20A RDSON@Tj=25°C : 6mΩ typ. 1.6 1.2 0.8 0.4 0 0 0 MTB7D0N06RJ3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C034J3 Issued Date : 2017.10.31 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.6 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 10 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) -75 -50 -25 30 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=5V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 VDS=10V 1 0.1 Pulsed Ta=25°C 0.01 0.001 8 VDS=30V 6 VDS=48V 4 2 ID=20A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 100 100μs 10ms 10 100ms 1s 10s 1 TC=25°C, Tj=150°C, VGS=10V RθJC=50°C/W, Single Pulse DC 0.1 0.1 MTB7D0N06RJ3 1 10 VDS, Drain-Source Voltage(V) 100 ID, Maximum Drain Current(A) ID, Drain Current(A) 1000 RDS(ON) Limited 10 15 20 25 30 35 40 Qg, Total Gate Charge(nC) 45 50 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 1m 5 60 55 50 45 40 35 30 25 20 15 10 5 0 VGS=10V, RθJC=2.5°C/W Single Pulse 25 50 75 100 125 Tc, Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C034J3 Issued Date : 2017.10.31 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Power Rating, Junction to Case 100 3000 90 VDS=10V 70 Power (W) ID, Drain Current (A) TJ(MAX) =150°C TA=25°C RθJC=2.5°C/W 2500 80 60 50 40 2000 1500 1000 30 20 500 10 0 0 1 2 3 4 5 0 0.0001 VGS, Gate-Source Voltage(V) 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized EffectiveTransient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC =2.5 °C/W 0.05 0.02 0.01 0.01 0.001 1.E-04 MTB7D0N06RJ3 Single Pulse 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C034J3 Issued Date : 2017.10.31 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB7D0N06RJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C034J3 Issued Date : 2017.10.31 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB7D0N06RJ3 CYStek Product Specification Spec. No. : C034J3 Issued Date : 2017.10.31 Revised Date : Page No. : 9/9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name B7D0 N06R Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB7D0N06RJ3 CYStek Product Specification