LMH6657, LMH6658 www.ti.com SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 LMH6657/LMH6658 270MHz Single Supply, Single & Dual Amplifiers Check for Samples: LMH6657, LMH6658 FEATURES 1 VS = 5V, TA = 25°C, RL = 100Ω (Typical Values Unless Specified) 2 • • • • • • • • • • • • • • • • • −3dB BW (AV = +1) 270MHz Supply Voltage Range 3V to 12V Slew Rate, (VS = ±5V) 700V/µs Supply Current 6.2mA/amp Output Current +80/−90mA Input Common Mode volt. 0.5V Beyond V−, 1.7V from V+ Output Voltage Swing (RL = 2kΩ) 0.8V from Rails Input Voltage Noise 11nV/√Hz Input Current Noise 2.1pA√Hz/ DG Error 0.03% DP Error 0.10° THD (5MHz) −55dBc Settling Time (0.1%) 37ns Fully Characterized for 5V, and ±5V Output Overdrive Recovery 18ns Output Short Circuit Protected(1) No Output Phase Reversal with CMVR Exceeded DESCRIPTION The LMH6657/6658 are low-cost operational amplifiers that operate from a single supply with input voltage range extending below the V−. Based on easy to use voltage feedback topology and boasting fast slew rate (700V/µs) and high speed (140MHz GBWP), the LMH6657 (Single) and LMH6658 (dual) can be used in high speed large signal applications. These applications include instrumentation, communication devices, set-top boxes, etc. With a -3dB BW of 100MHz (AV = +2) and DG & DP of 0.03% & 0.10° respectively, the LMH6657/6658 are well suited for video applications. The output stage can typically supply 80mA into the load with a swing of about 1V from either rail. For Industrial applications, the LMH6657/6658 are excellent cost-saving choices. Input referred voltage noise is low and the input voltage can extend below V− to ease amplification of low level signals that could be at or near the system ground. With low distortion and fast settling, LMH6657/6658 can provide buffering for A/D and D/A applications. The LMH6657/6658 versatility and ease of use is extended even further by offering these high slew rate , high speed Op Amps in miniature packages such as SOT-23-5, SC70, SOIC-8, and VSSOP-8. Refer to the Ordering Information section for packaging options available for each device. APPLICATIONS • • • • • CD/DVD ROM ADC Buffer Amp Portable Video Current Sense Buffer Portable Communications (1) Short Circuit Test is a momentary test. See Note 7 under Absolute Maximum Ratings. 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2002–2013, Texas Instruments Incorporated LMH6657, LMH6658 SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 www.ti.com Connection Diagram 5 1 OUTPUT V 1 + 8 + V OUT A A 2 V - - + 7 -IN A 2 + OUT B 3 6 +IN A +IN 3 4 + V Figure 1. SOT-23-5/SC70-5 (LMH6657) Top View -IN B B -IN 4 - 5 +IN B Figure 2. SOIC-8/VSSOP-8 (LMH6658) These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) ESD Tolerance 2KV (3) Human Body Model 200V (4) Machine Model VIN Differential ±2.5V See (5) (6) Output Short Circuit Duration Input Current ±10mA Supply Voltage (V+ - V−) 12.6V + V +0.8V, V −0.8V Voltage at Input/Output pins Soldering Information Infrared or Convection (20 sec.) 235°C Wave Soldering (10 sec.) 260°C −65°C to +150°C Storage Temperature Range Junction Temperature (7) (1) (2) (3) (4) (5) (6) (7) − +150°C Absolute maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics. If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications. Human body model, 1.5kΩ in series with 100pF. Machine Model, 0Ω in series with 200pF. Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms. The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board. Operating Ratings (1) Supply Voltage (V+ – V−) 3V to 12V Operating Temperature Range (2) Package Thermal Resistance (θJA) (2) (1) (2) 2 −40°C to +85°C SC70 478°C/W SOT-23–5 265°C/W VSSOP-8 235°C/W SOIC-8 190°C/W Absolute maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics. The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 LMH6657, LMH6658 www.ti.com SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 5V Electrical Characteristics Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, and RL = 100Ω (or as specified) tied to V+/2. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions GB Gain Bandwidth Product VOUT < 200mVPP SSBW −3dB BW AV = +1, VOUT = 200mVPP Min (1) Typ (2) Max (1) 140 220 MHz 270 AV = +2 or −1, VOUT = 200mVPP 100 Units MHz GFP Frequency Response Peaking AV = +2, VOUT = 200mVPP, DC to 100MHz 1.5 GFR Frequency Response Rolloff AV = +2, VOUT = 200mVPP, DC to 100MHz 0.5 LPD1° 1° Linear Phase Deviation AV = +2, VOUT = 200mVPP, ±1° 30 MHz GF0.1dB 0.1dB Gain Flatness AV = +2, ±0.1dB, VOUT = 200mVPP 13 MHz PBW Full Power Bandwidth −1dB, VOUT = 3VPP, AV = −1 55 MHz DG Differential Gain NTSC, VCM = 2V, RL = 150Ω to V+/2, Pos. Video Only 0.03 % DP Differential Phase NTSC, VCM = 2V, RL=150Ω to V+/2 Pos. Video Only 0.1 deg AV = +2, VOUT = 500mVPP 3.3 ns AV = −1, VOUT = 500mVPP 3.4 dB dB Time Domain Response tr Rise and Fall Time OS Overshoot, Undershoot AV = +2, VOUT = 500mVPP 18 % ts Settling Time VO = 2VPP, ±0.1%, RL = 500Ω to V+/2, AV = −1 37 ns SR Slew Rate (3) AV = −1, VO = 3VPP (4) 470 AV = +2, VO = 3VPP (4) 420 V/µs Distortion and Noise Response HD2 2nd Harmonic Distortion f = 5MHz, VO = 2VPP, AV = -1 −70 dBc HD3 3rd Harmonic Distortion f = 5MHz, VO = 2VPP, AV = -1 −57 dBc THD Total Harmonic Distortion f = 5MHz, VO = 2VPP, AV = -1 −55.5 dBc Vn Input-Referred Voltage Noise f = 100KHz 11 f = 1KHz 19 f = 100KHz 2.1 f = 1KHz 7.5 f = 5MHz, RL (SND) = 100Ω RCV: RF = RG = 1k 69 In Input-Referred Current Noise XTLKA Cross-Talk Rejection (LMH6658) nV/√Hz pA/√Hz dB Static, DC Performance AVOL CMVR VOS (1) (2) (3) (4) Large Signal Voltage Gain Input Common-Mode Voltage Range VO = 1.25V to 3.75V, RL = 2k to V+/2 85 95 VO = 1.5V to 3.5V, RL = 150Ω to V+/2 75 85 VO = 2V to 3V, RL = 50Ω to V+/2 70 80 −0.2 −0.1 −0.5 3.0 2.8 3.3 CMRR ≥ 50dB Input Offset Voltage ±1.1 dB V ±5 ±7 mV All limits are guaranteed by testing or statistical analysis. Typical values represent the most likely parametric norm. Slew rate is the "worst case" of the rising and falling slew rates. Output Swing not limited by Slew Rate limit. Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 Submit Documentation Feedback 3 LMH6657, LMH6658 SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 www.ti.com 5V Electrical Characteristics (continued) Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, and RL = 100Ω (or as specified) tied to V+/2. Boldface limits apply at the temperature extremes. Symbol Parameter Min (1) Conditions Typ (2) (5) ±2 TC VOS Input Offset Voltage Average Drift See IB Input Bias Current See (6) −5 TC IB Input Bias Current Average Drift See (5) 0.01 IOS Input Offset Current CMRR Common Mode Rejection Ratio 50 VCM Stepped from 0V to 3.0V + +PSRR Positive Power Supply Rejection Ratio V = 4.5V to 5.5V, VCM = 1V IS Supply Current (per channel) No load Max (1) Units μV/C −20 −30 μA nA/°C 300 500 nA 72 82 dB 72 82 dB 6.2 8.5 10 mA Miscellaneous Performance VOH Output Swing High VOL Output Swing Low IOUT Output Current ISC Output Short CircuitCurrent (7) RIN Common Mode Input Resistance CIN Common Mode Input Capacitance ROUT Output Impedance (5) (6) (7) RL = 2k to V+/2 4.10 3.8 4.25 RL = 150Ω to V+/2 4.00 3.70 4.19 + RL = 75Ω to V /2 3.85 3.50 4.15 RL = 2k to V+/2 900 1100 800 RL = 150Ω to V+/2 970 1200 870 R L = 75Ω to V+/2 990 1250 885 VOUT = 1V from either rail ±40 +85, −105 + Sourcing to V /2 100 80 155 Sinking to V+/2 100 80 220 V mV mA mA 3 MΩ 1.8 f = 1MHz, AV = +1 pF Ω 0.06 Drift determined by dividing the change in parameter at temperature extremes by the total temperature change. Positive current corresponds to current flowing into the device. Short circuit test is a momentary test. See Note 6 under Absolute Maximum Ratings. ±5V Electrical Characteristics Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = −5V, VCM = VO, and RL = 100Ω (or as specified) tied to 0V. Boldface limits apply at the temperature extremes. Symbol Parameter Min (1) Conditions GB Gain Bandwidth Product VOUT < 200mVPP SSBW −3dB BW AV = +1, VOUT = 200mVPP Typ (2) 140 220 270 AV = +2 or −1, VOUT = 200mVPP 100 GFP Frequency Response Peaking AV = +2, VOUT = 200mVPP, DC to 100MHz 1.0 GFR Frequency Response Rolloff AV = +2, VOUT = 200mVPP, DC to 100MHz 0.9 LPD1° 1° Linear Phase Deviation AV = +2, VOUT = 200mVPP, ±1° 30 (1) (2) 4 Max (1) Units MHz MHz dB dB MHz All limits are guaranteed by testing or statistical analysis. Typical values represent the most likely parametric norm. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 LMH6657, LMH6658 www.ti.com SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 ±5V Electrical Characteristics (continued) Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = −5V, VCM = VO, and RL = 100Ω (or as specified) tied to 0V. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (1) Typ (2) Max (1) Units GF0.1dB 0.1dB Gain Flatness AV = +2, ±0.1dB, VOUT = 200mVPP 20 MHz PBW Full Power Bandwidth −1dB, VOUT = 8VPP, AV = −1 DG Differential Gain NTSC, RL = 150Ω, Pos. or Neg. Video 0.03 30 MHz % DP Differential Phase NTSC,RL = 150Ω, Pos. or Neg. Video 0.1 deg AV = +2, VOUT = 500mVPP 3.3 AV = −1, VOUT = 500mVPP 3.3 Time Domain Response tr Rise and Fall Time ns OS Overshoot, Undershoot AV = +2, VOUT = 500mVPP 16 % ts Settling Time VO = 5VPP, ±0.1%, RL =500Ω, AV = −1 35 ns SR Slew Rate (3) AV = −1, VO = 8VPP 700 AV = +2, VO = 8VPP 500 V/µs Distortion and Noise Response HD2 2nd Harmonic Distortion f = 5MHz, VO = 2VPP, AV = -1 −70 dBc HD3 3rd Harmonic Distortion f = 5MHz, VO = 2VPP, AV = -1 −57 dBc THD Total Harmonic Distortion f = 5MHz, VO = 2VPP, AV = -1 −55.5 dBc Vn Input-Referred Voltage Noise f = 100KHz 11 f = 1KHz 19 f = 100KHz 2.1 f = 1KHz 7.5 f = 5MHz, RL (SND) = 100Ω RCV: RF = RG = 1k 69 In Input-Referred Current Noise XTLKA Cross-Talk Rejection (LMH6658) nV/√Hz pA/√Hz dB Static, DC Performance AVOL Large Signal Voltage Gain VO = −3.75V to 3.75V, RL = 2k 87 100 VO = −3.5V to 3.5V, RL = 150Ω 80 90 VO = −3V to 3V, RL = 50Ω CMVR Input Common-Mode Voltage Range CMRR ≥ 50dB 75 85 −5.2 −5.1 −5.5 3.0 2.8 3.3 VOS Input Offset Voltage ±1.0 TC VOS Input Offset Voltage Average Drift See (4) ±2 IB Input Bias Current See (5) −5 TCIB Input Bias Current Average Drift See (4) 0.01 IOS Input Offset Current CMRR Common ModeRejection Ratio 50 VCM Stepped from −5V to 3.0V + V = 4.5V to 5.5V, VCM = −4V +PSRR Positive Power Supply Rejection Ratio −PSRR Negative Power Supply Rejection V− = −4.5V to −5.5V Ratio IS Supply Current (per channel) No load dB V ±5 ±7 mV μV/C −20 −30 μA nA/°C 300 500 nA 75 84 dB 75 82 dB 78 85 dB 6.5 9.0 11 mA Miscellaneous Performance (3) (4) (5) Slew rate is the "worst case" of the rising and falling slew rates. Drift determined by dividing the change in parameter at temperature extremes by the total temperature change. Positive current corresponds to current flowing into the device. Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 Submit Documentation Feedback 5 LMH6657, LMH6658 SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 www.ti.com ±5V Electrical Characteristics (continued) Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = −5V, VCM = VO, and RL = 100Ω (or as specified) tied to 0V. Boldface limits apply at the temperature extremes. Symbol VOH Output Swing High VOL Min (1) Typ (2) RL = 2k 4.10 3.80 4.25 RL = 150Ω 4.00 3.70 4.20 RL = 75Ω 3.85 3.50 4.18 RL = 2k −4.05 −3.80 −4.19 RL = 150Ω −3.90 −3.65 −4.05 R L = 75Ω −3.80 −3.50 −4.00 Parameter Output Swing Low Conditions IOUT Output Current VOUT = 1V from either rail ±45 +100, −110 ISC Output Short Circuit Current (6) Sourcing to Ground 120 100 180 Sinking to Ground 120 100 230 RIN Common Mode Input Resistance CIN Common Mode Input Capacitance ROUT Output Impedance (6) 6 4 1.8 f = 1MHz, AV = +1 0.06 Max (1) Units V V mA mA MΩ pF Ω Short circuit test is a momentary test. See Note 6 under Absolute Maximum Ratings. Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 LMH6657, LMH6658 www.ti.com SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 Typical Performance Characteristics Non-Inverting Frequency Response, Gain Inverting Frequency Response, Gain AV = -1 0 AV = +10 -1 -1 AV = -10 -3 GAIN AV = +5 GAIN AV = -2 0 AV = +2 -3 AV = -5 AV = +1 -5 -5 VS = ±2.5V VS = ±2.5V RL = 100: -7 10M 100M FREQUENCY (Hz) 1M RL = 100: -7 VOUT = 200mVPP VOUT = 200mVPP 1M 500M 10M 100M FREQUENCY (Hz) Figure 3. Figure 4. Non-Inverting Frequency Response, Phase Inverting Frequency Response, Phase 0 0 AV = -2 AV = +1 -50 AV = -1 AV = -5 AV = +5 -100 AV = -10 -50 AV = +10 PHASE PHASE 500M AV = +2 -150 -100 -150 AV = -1 VS = ±2.5V -200 -200 VS = ±2.5V AV = -2 RL = 100: RL = 100: VOUT = 200mVPP VOUT = 200mVPP 1M 10M 100M FREQUENCY (Hz) 500M 1M AV = -5 10M 100M FREQUENCY (Hz) Figure 5. 500M Figure 6. Open Loop Gain/Phase vs. Frequency Unity Gain Frequency vs. VCM 140 VS = ±5V 25°C RL = 100: 80 60 40 20 GAIN 10 85°C fu (MHz) Im = 35.2° PHASE (°) GAIN (dB) 130 100 PHASE -40°C 120 20 0 0 110 133MHz VS = ±5V RL = 100: 100k 1G 10M 100M 1M FREQUENCY (Hz) 100 -5 Figure 7. -4 -3 -2 -1 0 1 VCM (V) 2 3 4 5 Figure 8. Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 Submit Documentation Feedback 7 LMH6657, LMH6658 SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) Phase Margin vs. VCM Output vs. Input 45 5 VS = ±5V VS = ±2.5V, AV = -1 4.5 RL = 100: 40 RL = 100: 4 -40°C f = 50MHz f = 40MHz PM (°) 35 OUTPUT (VPP) 3.5 25°C 30 85°C f = 30MHz 3 f = 20MHz 2.5 2 1.5 f = 60MHz 25 1 f = 70MHz 0.5 20 f = 80MHz 0 -5 -4 -3 -2 -1 0 1 2 3 4 0.5 5 1.5 1 VCM (V) Figure 9. VS = ±5V 90 AV = -1 8 3.5 CMRR vs. Frequency 100 f = 20MHz VS = ±5V 9 3 Figure 10. Output vs. Input 10 2.5 2 INPUT (VPP) f = 1MHz RL = 100: 80 f = 40MHz 6 CMRR (dB) f = 30MHz f = 50MHz 5 4 3 70 60 50 40 2 f = 60MHz f = 70MHz 1 30 f = 80MHz 20 0 1 2 3 4 5 7 6 8 9 1k 10 10k Figure 11. PSRR vs. Frequency 100M DG/DP vs. IRE 100 0.03 RF = RG = 750: +PSRR 80 0.025 70 0.02 DG (%) -PSRR PSRR (dB) 10M Figure 12. 90 60 50 RL = 150: VS = ±5V NTSC 75 0.015 0.01 50 DG 0.005 40 25 0 DP 30 -0.005 20 10 100 1k 10k 100k 1M 10M 100M -0.01 -100 -80 -60 -40 -20 FREQUENCY (Hz) Submit Documentation Feedback 0 0 20 40 60 80 100 IRE (%) Figure 13. 8 1M 100k FREQUENCY (Hz) INPUT (VPP) DP (milli_deg) OUTPUT (VPP) 7 Figure 14. Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 LMH6657, LMH6658 www.ti.com SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 Typical Performance Characteristics (continued) Noise vs. Frequency Crosstalk Rejection vs. Frequency 140 70 120 60 100 50 80 40 120 30 40 20 CURRENT 100 90 CT (dB) VOLTAGE 60 NOISE CURRENT (pA/ Hz) NOISE VOLTAGE (nV/ Hz) 110 0 10 1k 100 50 40 VS = ±5V SND: RL = 100: 30 RCV = R = R = 1k F G 20 100 10k 100k 1M 1k FREQUENCY (Hz) 0 100k 10k 70 60 10 20 80 FREQUENCY (Hz) Figure 15. 100M Figure 16. Output Impedance vs. Frequency HD vs. VOUT -40 100 f = 500KHz AV = +1 AV = -1 -50 10 VS = ±5V THD (dBc) 1 0.1 THD RL = 100: -60 ROUT (:) 10M HD3 -70 -80 HD2 0.01 -90 0.001 100 -100 1k 10k 100k 1M 0 10M 100M 1G 1 2 3 4 5 6 8 7 9 VOUT (VPP) FREQUENCY (Hz) Figure 17. Figure 18. HD vs. VOUT THD vs. VOUT -40 -20 VS = ±2.5V THD -45 -30 -50 AV = +2 10MHz, 150: -40 HD3 THD (dBc) THD (dBc) -55 -60 HD2 -65 -70 f = 5MHz AV = -1 -75 10MHz, 1k: -60 -70 1MHz, 150: -80 VS = ±5V -80 -50 -90 RL = 100: -85 1MHz, 1k: -100 0 1 2 3 4 5 6 VOUT (VPP) 7 8 9 0 0.5 1 1.5 2 2.5 3 VOUT (VPP) Figure 19. Figure 20. Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 Submit Documentation Feedback 9 LMH6657, LMH6658 SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) HD vs. Frequency HD vs. Frequency -20 -20 VOUT = 2VPP VOUT = 5VPP AV = -1 -30 THD VS = ±5V RL = 100: -50 -60 THD VS = ±5V -40 HD (dBc) HD (dBc) -40 AV = -1 -30 RL = 100: -50 -60 HD2 HD2 -70 -70 HD3 -80 -80 HD3 -90 100 1k 10k -90 100 100k 1k 10k FREQUENCY (KHz) FREQUENCY (KHz) Figure 21. Figure 22. VOUT vs. ISOURCE VOUT vs. ISINK 10 10 VS = ±2.5V VS = ±2.5V 85°C 125°C 85°C 25°C - VOUT FROM V (V) 125°C -40°C + VOUT FROM V (V) 100k 25°C -40°C 1 125°C -40°C 1 -40°C 125°C 85°C 0.1 0.1 0 100 50 150 200 50 0 100 150 IOUT (mA) IOUT (mA) Figure 23. Figure 24. VOUT vs. ISOURCE 200 250 VOUT vs. ISINK 10 10 VS = ±5V VS = ±5V 125°C 125°C 25°C - VOUT FROM V (V) -40°C + VOUT FROM V (V) 85°C 25°C 25°C 1 125°C -40°C 1 -40°C 125°C 85°C 85°C 0.1 0 50 100 150 200 0.1 50 0 IOUT (mA) Submit Documentation Feedback 150 200 250 IOUT (mA) Figure 25. 10 100 Figure 26. Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 LMH6657, LMH6658 www.ti.com SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 Typical Performance Characteristics (continued) Short Circuit Current Short Circuit Current 250 200 -40°C 25°C 180 200 140 25°C ISINK (mA) ISOURCE (mA) 160 120 85°C, 125°C 100 80 85°C, 125°C 150 100 60 -40°C 50 40 20 0 0 2 4 6 8 10 12 14 4 2 8 6 VS (V) Figure 27. Settling Time vs. Output Step Amplitude Settling Time vs. Output Step Amplitude 40 0.1% 0.1% 35 35 30 30 SETTLING TIME (ns) SETTLING TIME (ns) 14 Figure 28. 40 1% 25 20 AV = -1 15 VS = ±2.5V 25 20 1% AV = -1 15 VS = ±5V RL = 500: RL = 500: 10 10 0 0.5 1 2 1.5 1 0 2.5 2 3 4 5 6 VOUT (VPP) VOUT (VPP) Figure 29. Figure 30. ΔVOS vs. VOUT 0.1% Settling Time vs. Cap Load 140 +4 AV = -1 85°C VS = 10V 120 +2 ZL = 500: || CL 100 0 RSERIES = 20: 'VOS (mV) SETTLING TIME (ns) 12 10 VS (V) 80 POSITIVE 60 25°C -2 -40°C -4 -6 40 NEGATIVE 20 -8 0 -10 VS = ±2.5V RL = 150: 10 100 10k 1k -2 CL (pF) Figure 31. -1 0 VOUT (V) 1 2 Figure 32. Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 Submit Documentation Feedback 11 LMH6657, LMH6658 SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) ΔVOS vs. VOUT IS /Amp vs. VS 8 2 85°C 85°C 25°C 1 7 25°C 0 6 -40°C -40°C -2 IS (mA) 'VOS (mV) -1 -3 -4 5 4 3 -5 2 -6 VS = ±5V 1 -7 R = 150: L - VCM = V +0.5V 0 -8 -5 -4 -3 -2 4 2 6 10 VOUT (V) 8 VS (V) Figure 33. Figure 34. -1 0 1 2 3 4 5 IS/Amp vs. VCM 14 IS/Amp vs. VCM 10 9 9 85°C 8 8 7 25°C 6 -40°C 85°C 7 IS (mA) IS (mA) 12 5 25°C 6 -40°C 5 4 4 3 3 2 VS = ±2.5V 2 -0.5 0 VS = ±5V 1 0.5 1 1.5 2 2.5 3 -6 3.5 4 -5 -4 -3 -2 -1 0 1 2 3 4 VCM (V) VCM (V) Figure 35. Figure 36. VOS vs. VS (for 3 Representative Units) VOS vs. VS (for 3 Representative Units) 0 0 25°C -40°C UNIT 1 -0.5 -0.5 UNIT 1 -1 VOS (mV) VOS (mV) -1 -1.5 UNIT 2 -2 -1.5 UNIT 2 -2 UNIT 3 UNIT 3 -2.5 -2.5 -3 -3 2 4 6 8 10 12 14 4 2 Figure 37. 12 Submit Documentation Feedback 6 8 10 12 14 VS (V) VS (V) Figure 38. Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 LMH6657, LMH6658 www.ti.com SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 Typical Performance Characteristics (continued) VOS vs. VS (for 3 Representative Units) VOS vs. VCM (A Typical Unit) -1.1 0 85°C UNIT 1 -1.2 -0.5 85°C -1.3 VOS (mV) VOS (mV) -1 -1.5 UNIT 2 -40°C -1.4 -1.5 -1.6 -2 25°C -1.7 UNIT 3 -2.5 -1.8 VS = ±5V -1.9 -3 2 4 VS (V) -2 -1 0 VCM (V) Figure 39. Figure 40. 8 6 10 12 -6 14 -5 -4 |IB| vs. VS -3 1 2 3 4 IOS vs. VS 0.16 6 85°C 0.14 5 25°C 0.12 25°C IOS (PA) IB (PA) 4 3 0.1 -40°C 0.08 -40°C 0.06 2 0.04 85°C 1 0.02 0 0 2 4 6 8 12 10 14 2 VS (V) 4 6 8 10 12 14 VS (V) Figure 42. Small Signal Step Response Small Signal Step Response 0.1 V/DIV 0.1 V/DIV Figure 41. VS = ±2.5V VS = ±2.5V AV = +1 AV = +2 RL = 100: RL = 100: 2 ns/DIV 5 ns/DIV Figure 43. Figure 44. Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 Submit Documentation Feedback 13 LMH6657, LMH6658 SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) Small Signal Step Response 0.1 V/DIV 0.1 V/DIV Small Signal Step Response VS = ±5V VS = ±5V AV = +1 AV = +2 RL = 100: RL = 100: 5 ns/DIV Figure 45. Figure 46. Large Signal Step Response Large Signal Step Response 1 V/DIV 0.4 V/DIV 2 ns/ DIV VS = ±5V VS = ±2.5V AV = +1 AV = +2 RL = 100: RL = 100: 10 ns/DIV 5 ns/DIV Figure 47. Figure 48. 1 V/DIV Large Signal Step Response VS = ±5V AV = +2 RL = 100: 10 ns/DIV Figure 49. 14 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 LMH6657, LMH6658 www.ti.com SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 APPLICATION SECTION LARGE SIGNAL BEHAVIOR The LMH6657/6658 is specially designed to handle large output swings, such as those encountered in video waveforms, without being slew rate limited. With 5V supply, the LMH6657/6658 slew rate limit is larger than that might be necessary to make full allowable output swing excursions. Therefore, the large signal frequency response is dominated by the small signal characteristics, rather than the conventional limitation imposed by slew rate limit. The LMH6657/6658 input stage is designed to provide excess overdrive when needed. This occurs when fast input signal excursions cannot be followed by the output stage. In these situations, the device encounters larger input signals than would be encountered under normal closed loop conditions. The LMH6657/6658 input stage is designed to take advantage of this "input overdrive" condition. The larger the amount of this overdrive, the greater is the speed with which the output voltage can change. Here is a plot of how the output slew rate limitation varies with respect to the amount of overdrive imposed on the input: 800 VS = ±5V SLEW RATE (V/Ps) 700 600 500 400 300 200 100 0 0.00 1.00 2.00 3.00 INPUT OVERDRIVE (V) Figure 50. Plot Showing the Relationship Between Slew Rate and Input Overdrive To relate the explanation above to a practical example, consider the following application example. Consider the case of a closed loop amplifier with a gain of −1 amplifying a sinusoidal waveform. From the plot of Output vs. Input (Typical Performance Characteristics section), with a 30MHz signal and 7VPP input signal, it can be seen that the output will be limited to a swing of 6.9VPP. From the frequency Response plot it can be seen that the inverting gain of −1 has a −32° output phase shift at this frequency. It can be shown that this setup will result in about 1.9VPP differential input voltage corresponding to 650V/μs of slew rate from Figure 50, above (SR = VO(pp)*π*f = 650V/μs). Note that the amount of overdrive appearing on the input for a given sinusoidal test waveform is affected by the following: • Output swing • Gain setting • Input/output phase relationship for the given test frequency • Amplifier configuration (inverting or non-inverting) Due to the higher frequency phase shift between input and output, there is no closed form solution to input overdrive for a given input. Therefore, Figure 50 is not very useful by itself in determining the output swing. The following plots aid in predicting the output transition time based on the amount of swing required for a given gain setting. Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 Submit Documentation Feedback 15 LMH6657, LMH6658 SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 www.ti.com 18 AV = +10, POS RL = 100: 16 14 AV = +10, NEG Tr (ns) 12 10 AV = +1, POS AV = +6, POS 8 6 AV = +6, NEG AV = +2, POS 4 AV = +2, NEG AV = +1, NEG 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 2 VO (VPP) Figure 51. Output 20%-80% Transition vs. Output Voltage Swing (Non-Inverting Gain) 18 16 RL = 100: 14 AV = -10, NEG AV = -10, POS Tr (ns) 12 10 AV = -5, NEG 8 6 4 AV = -1, POS AV = -5, POS AV = -1, NEG 2 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VO (VPP) Figure 52. Output 20%-80% Transition vs. Output Voltage Swing (Inverting Gain) Beyond a gain of 5 or so, the LMH6657/6658 output transition would be limited by bandwidth. For example, with a gain of 5, the −3dB BW would be around 30MHz corresponding to a rise time of about 12ns (10% - 90%). Assuming a near linear transition, the 20%-80% transition time would be around 9ns which matches the measured results as shown in Figure 51. When the output is heavily loaded, output swing may be limited by current capability of the device. Refer to Output Current Capability section, below, for more details. Output Characteristics OUTPUT CURRENT CAPABILITY The LMH6657/6658 output swing for a given load can be determined by referring to the Output Voltage vs. Output Current plots (Typical Performance Characteristics section). Characteristic Tables show the output current when the output is 1V from either rail. The plots and table values can be used to predict closed loop continuous value of current for a given load. If left unchecked, the output current capability of the LMH6657/6658 could easily result in junction temperature exceeding the maximum allowed value specified under Absolute Maximum Ratings. Proper heat sinking or other precautions are required if conditions as such, exist. Under transient conditions, such as when the input voltage makes a large transition and the output has not had time to reach its final value, the device can deliver output currents in excess of the typical plots mentioned above. Plots shown in Figure 53 and 54 below depict how the output current capability improves under higher input overdrive voltages: 16 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 LMH6657, LMH6658 www.ti.com SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 10 + VOUT FROM V (V) VS = ±5V 25°C 1 20mV 500mV 0.1 0 50 100 IOUT (mA) 150 200 Figure 53. VOUT vs. ISOURCE (for Various Overdrive) 10 - VOUT FROM V (V) VS = ±5V 25°C -20mV 1 -500mV 0.1 0 50 100 150 200 250 IOUT (mA) Figure 54. VOUT vs. ISINK (for Various Overdrive) The LMH6657/6658 output stage is designed to swing within approximately one diode drop of each supply voltage by utilizing specially designed high speed output clamps. This allows adequate output voltage swing even with 5V supplies and yet avoids some of the issues associated with rail-to-rail output operational amplifiers. Some of these issues are: • Supply current increases when output reaches saturation at or near the supply rails • Prolonged recovery when output approaches the rails The LMH6657/6658 output is exceedingly well-behaved when it comes to recovering from an overload condition. As can be seen from Figure 55 below, the LMH6657/6658 will typically recover from an output overload condition in about 18ns, regardless of the duration of the overload. 2 V/DIV OUTPUT INPUT VS = ±5V, AV = +6, RF = 1k RG = 200: RL = OPEN 20 ns/DIV Figure 55. Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 Submit Documentation Feedback 17 LMH6657, LMH6658 SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 www.ti.com OUTPUT PHASE REVERSAL This is a problem with some operational amplifiers. This effect is caused by phase reversal in the input stage due to saturation of one or more of the transistors when the inputs exceed the normal expected range of voltages. Some applications, such as servo control loops among others, are sensitive to this kind of behavior and would need special safeguards to ensure proper functioning. The LMH6657/6658 is immune to output phase reversal with input overload. With inputs exceeded, the LMH6657/6658 output will stay at the clamped voltage from the supply rail. Exceeding the input supply voltages beyond the Absolute Maximum Ratings of the device could however damage or otherwise adversely effect the reliability or life of the device. DRIVING CAPACITIVE LOADS The LMH6657/6658 can drive moderate values of capacitance by utilizing a series isolation resistor between the output and the capacitive load. Typical Performance Characteristics section shows the settling time behavior for various capacitive loads and 20Ω of isolation resistance. Capacitive load tolerance will improve with higher closed loop gain values. Applications such as ADC buffers, among others, present complex and varying capacitive loads to the Op Amp; best value for this isolation resistance is often found by experimentation and actual trial and error for each application. DISTORTION Applications with demanding distortion performance requirements are best served with the device operating in the inverting mode. The reason for this is that in the inverting configuration, the input common mode voltage does not vary with the signal and there is no subsequent ill effects due to this shift in operating point and the possibility of additional non-linearity. Moreover, under low closed loop gain settings (most suited to low distortion), the non-inverting configuration is at a further disadvantage of having to contend with the input common voltage range. There is also a strong relationship between output loading and distortion performance (i.e. 1kΩ vs. 100Ω distortion improves by about 20dB @100KHz) especially at the lower frequency end where the distortion tends to be lower. At higher frequency, this dependence diminishes greatly such that this difference is only about 4dB at 10MHz. But, in general, lighter output load leads to reduced HD3 term and thus improves THD. PRINTED CIRCUIT BOARD LAYOUT AND COMPONENT VALUES SECTIONS Generally, a good high frequency layout will keep power supply and ground traces away from the inverting input and output pins. Parasitic capacitances on these nodes to ground will cause frequency response peaking and possible circuit oscillations (see Application Note OA-15 for more information). Texas Instruments suggests the following evaluation boards as a guide for high frequency layout and as an aid in device testing and characterization: Device Package Evaluation Board PN LMH6657MF SOT-23-5 CLC730068 LMH6657MG SC-70 NA LMH6658MA 8-Pin SOIC CLC730036 LMH6658MM 8-Pin VSSOP CLC730123 These free evaluation boards are shipped when a device sample request is placed with Texas Instruments. Another important parameter in working with high speed/high performance amplifiers, is the component values selection. Choosing external resistors that are large in value will effect the closed loop behavior of the stage because of the interaction of these resistors with parasitic capacitances. These capacitors could be inherent to the device or a by-product of the board layout and component placement. Either way, keeping the resistor values lower, will diminish this interaction to a large extent. On the other hand, choosing very low value resistors will load down nodes and will contribute to higher overall power dissipation. 18 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 LMH6657, LMH6658 www.ti.com SNOSA35F – AUGUST 2002 – REVISED MARCH 2013 REVISION HISTORY Changes from Revision E (March 2013) to Revision F • Page Changed layout of National Data Sheet to TI format .......................................................................................................... 18 Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6657 LMH6658 Submit Documentation Feedback 19 PACKAGE OPTION ADDENDUM www.ti.com 1-Nov-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) LMH6657MF/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A85A LMH6657MFX/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A85A LMH6657MG NRND SC70 DCK 5 1000 TBD Call TI Call TI -40 to 85 A76 LMH6657MG/NOPB ACTIVE SC70 DCK 5 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A76 LMH6657MGX/NOPB ACTIVE SC70 DCK 5 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A76 LMH6658MA/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LMH66 58MA LMH6658MAX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LMH66 58MA LMH6658MM/NOPB ACTIVE VSSOP DGK 8 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A88A LMH6658MMX/NOPB ACTIVE VSSOP DGK 8 3500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A88A (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com (4) 1-Nov-2013 There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ LMH6657MF/NOPB SOT-23 LMH6657MFX/NOPB LMH6657MG Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 3.2 1.4 4.0 8.0 Q3 DBV 5 1000 178.0 8.4 SOT-23 DBV 5 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 SC70 DCK 5 1000 178.0 8.4 2.25 2.45 1.2 4.0 8.0 Q3 LMH6657MG/NOPB SC70 DCK 5 1000 178.0 8.4 2.25 2.45 1.2 4.0 8.0 Q3 LMH6657MGX/NOPB SC70 DCK 5 3000 178.0 8.4 2.25 2.45 1.2 4.0 8.0 Q3 LMH6658MAX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 Pack Materials-Page 1 3.2 B0 (mm) PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LMH6657MF/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0 LMH6657MFX/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0 LMH6657MG SC70 DCK 5 1000 210.0 185.0 35.0 LMH6657MG/NOPB SC70 DCK 5 1000 210.0 185.0 35.0 LMH6657MGX/NOPB SC70 DCK 5 3000 210.0 185.0 35.0 LMH6658MAX/NOPB SOIC D 8 2500 367.0 367.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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