BC807-16, -25, -40 -500 mA, -50 V PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free & RoHS compliant FEATURES z z z Ideally suited for automatic insertion Epitaxial planar die construction Complementary to BC817 (NPN Type) SOT-23 3 Collector 1 Base 2 Emitter A MARKING L BC807-16:5A; K 3 B S Top View BC807-25:5B; 1 BC807-40:5C J 2 V G C H D Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Symbol Ratings Unit Collector to Base Voltage Parameter VCBO -50 V Collector to Emitter Voltage VCEO -45 V Emitter to Base Voltage VEBO -5 V Collector Current IC -500 mA Collector Power Dissipation PC 300 mW TJ, TSTG +150, -55 ~ +150 ℃ Junction, Storage Temperature CHARACTERISTICS at Ta = 25°C Symbol Min. Max. Unit BVCBO -50 - V IC = -10 uA, IE = 0 BVCEO -45 - V IC = -10 mA, IB = 0 BVEBO -5 - V IE = -1 uA, IC = 0 ICBO - -0.1 uA VCB = -45V, IE = 0 ICEO - -0.2 uA VCE = -40V, IB = 0 IEBO - -0.1 uA VEB = -4V, IC = 0 VCE(sat) - -0.7 V IC = -500mA, IB = -50 mA VBE(sat) - -1.2 V IC = -500mA, IB = -50 mA 100 160 250 250 400 600 100 - hFE(1) 807-16 807-25 807-40 fT 01-June-2002 Rev. B Test Conditions VCE = -1 V, IC = -100 mA MHz VCE = -5 V, IC = -10 mA, f = 100MHz Page 1 of 2 BC807-16, -25, -40 Elektronische Bauelemente -500 mA, -50 V PNP Plastic Encapsulate Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. B Page 2 of 2