DCG20C1200HR tentative SiC Schottky Diode VRRM = 1200 V IFAV = 2x 12.5 A Ultra fast switching Zero reverse recovery Common Cathode Part number DCG20C1200HR Backside: isolated E72873 1 2 3 Features / Advantages: Applications: Package: ISO247 • Ultra fast switching • Zero reverse recovery • Zero forward recovery • Temperature independent switching behavior • Positive temperature coefficient of forward voltage • TVJM = 175°C • Solar inverter • Uninterruptible power supply (UPS) • Welding equipment • Switched-mode power supplies • Medical equipment • High speed rectifier • Isolation Voltage: 3600 V~ • Industry standard outline • RoHS compliant • Epoxy meets UL 94V-0 • Soldering pins for PCB mounting • Backside: DCB ceramic • Reduced weight • Advanced power cycling Terms & Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 20180529 1-6 DCG20C1200HR tentative SiC Diode (per diode) Ratings Symbol Definitions Conditions min. VRSM max. non-repetitive reverse blocking voltage VRRM max. repetitive reverse blocking voltage IR reverse current VR = VRRM TVJ = 25°C TVJ = 175°C VF forward voltage IF = 10 A IF = 20 A IF = 10 A IF = 20 A average forward current TC = 80°C TC = 100°C IF25 IF80 IF100 forward current based on typ. VF0 and rF IFSM max forward surge current t = 10 ms,half sine (50 Hz) tP = 10 µs, pulse VF0 threshold voltage rF slope resistance QC total capacitive charge VR = 800 V, IF = 10A dI/dt = 200 A/µs C total capacitance VR = 0 V VR = 400 V VR = 800 V thermal resistance junction to case thermal resistance junction to heatsink 1200 V 30 55 250 350 µA µA TVJ = 25°C 1.5 1.8 V V TVJ = 175°C 2.2 3.0 V V 12.5 11 A A 22 17 15 A A A 750 A A TC = 25°C TC = 80°C TC = 100°C TVJ = 25°C VR = 0V TVJ = 125°C 175°C TVJ = 125°C 175°C 0.77 0.69 107 133 V V mW mW TVJ = 25°C 52 nC TVJ = 25°C, f = 1 MHz 755 45 38 pF pF pF 1.9 with heatsink compound; IXYS test setup IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved V rectangular, d = 0.5 TVJ = 175°C for power loss calculation max. 1200 TVJ = 25°C IFAV RthJC RthJH typ. 2.2 K/W K/W 20180529 2-6 DCG20C1200HR tentative Package ISO247 Ratings Symbol Definitions Conditions IRMS RMS current per terminal Tstg storage temperature Top operation temperature TVJ virtual junction temperature min. typ. max. 70 A -40 150 °C -40 150 °C -40 175 °C Weight 6 MD FC mounting torque d Spp/App d Spb/Apb creepage distance on surface / striking distance through air terminal to terminal terminal to backside VISOL isolation voltage t = 1 second t = 1 minute 0.8 40 mounting force with clip g 1.2 120 Nm N 2.7 mm 4.1 mm 3600 3000 50/60 Hz; RMS; IISOL < 1 mA V V Product Marking Part description D C G 20 C 1200 HR Logo Part Number DateCode Assembly Code = Diode = SiC = Extreme fast = Current Rating [A] = Common Cathode = Reverse Voltage [V] = ISO247 (3) abcdef YYWWZ 000000 Assembly Line Ordering Part Name Marking on Product Standard DCG20C1200HR DCG20C1200HR Equivalent Circuits for Simulation I V0 R0 Tube 30 Ordering Code 522960 *on die level, typical TVJ = 125°C TVJ = 175°C V0 max threshold voltage 0.77 0.68 V R0 max slope resistance * 107 133 mW IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved Delivering Mode Base Qty 20180529 3-6 DCG20C1200HR tentative Outlines ISO247 A E A2 A3 2x E3 ØP 2x D3 S Q D D1 2x E2 4 1 2 3 D2 L1 E1 L 2x b2 3x b b4 C A1 2x e 1 2 IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved Millimeter min max A 4.70 5.30 A1 2.21 2.59 A2 1.50 2.49 A3 typ. 0.05 b 0.99 1.40 b2 1.65 2.39 b4 2.59 3.43 c 0.38 0.89 D 20.79 21.45 D1 typ. 8.90 D2 typ. 2.90 D3 typ. 1.00 E 15.49 16.24 E1 typ. 13.45 E2 4.31 5.48 E3 typ. 4.00 e 5.46 BSC L 19.80 20.30 L1 4.49 Ø P 3.55 3.65 Q 5.38 6.19 S 6.14 BSC Dim. Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 typ. 0.002 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.819 0.844 typ. 0.350 typ. 0.114 typ. 0.039 0.610 0.639 typ. 0.530 0.170 0.216 typ. 0.157 0.215 BSC 0.780 0.799 0.177 0.140 0.144 0.212 0.244 0.242 BSC 3 20180529 4-6 DCG20C1200HR tentative SiC Diode (per leg) 20 1.0 TVJ = 25°C 125°C 175°C 16 IF 0.8 IR 12 0.6 [mA] [A] 8 0.4 4 0.2 0 0 1 2 3 TVJ = 25°C 125°C 175°C 0.0 600 4 800 1000 VF [V] 1200 1400 1600 VR [V] Fig. 1 Typ. forward characteristics. Fig. 2 Typ. reverse characteristics 80 80 10% Duty 30% Duty 50% Duty 70% Duty DC 70 60 70 Ptot 60 50 50 40 [W] 40 30 30 20 20 10 10 IF(peak) [A] 0 25 50 75 100 125 150 0 25 175 50 75 TC [°C] 100 125 150 175 TC [°C] Fig. 4 Power derating Fig. 3 Typ. current derating 70 800 60 700 600 50 TVJ = 25°C 500 QC 40 C [nC] 30 [pF] 400 300 20 200 10 100 0 0 200 400 600 800 1000 VR [V] Fig. 5 Typ. recovery charge vs. reverse voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 0 0.1 1 10 100 1000 VR [V] Fig. 6 Typ. junction capacitance vs. reverse Voltage 20180529 5-6 DCG20C1200HR tentative SiC Diode (per leg) 2.4 20 2.2 2.0 16 1.8 1.6 EC 12 ZthJH1.4 8 [K/W]1.0 1.2 [µJ] 0.8 0.6 4 0.4 0.2 0.0 0 0 200 400 600 800 1000 VR [V] Fig. 7 Typical capacitance stored energy IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 1 10 100 1000 10000 tp [ms] Fig. 8 Typ. transient thermal impedance 20180529 6-6