Seme LAB BFX48 Pnp silicon epitaxial transistor Datasheet

BFX48
MECHANICAL DATA
Dimensions in mm (inches)
PNP SILICON EPITAXIAL
TRANSISTOR
5.84 (0.230)
5.31 (0.209)
12.7 (0.500)
min.
5.33 (0.210)
4.32 (0.170)
4.95 (0.195)
4.52 (0.178)
0.48 (0.019)
0.41 (0.016)
dia.
APPLICATIONS
• It is suitable for a wide range of applications including
low noise, low current high gain RF and wide band
pulse amplifiers.
2.54 (0.100)
Nom.
3
1
2
TO18 PACKAGE
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage (IE = 0)
-30V
VCEO
Collector – Emitter Voltage(IB = 0)
-30V
VEBO
Emitter – Base Voltage (IC = 0)
-5V
IC
Collector Current
Ptot
Tj, Tstg
-100mA
Total Power Dissipation Tamb £ 25°C
Tcase £ 25°C
Storage Temperature, Operating Junction Temperature
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
0.36W
1W
-65 to 200°C
Document. 2340
Issue 1
BFX48
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated)
Parameter
ICES
V(BR)CBO
V(BR)CEO*
Collector Cut–off Current
Collector – Base Breakdown
Voltage
Collector– Emitter Breakdown
Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
VCE(sat)*
VBE(sat)*
Collector – Emitter Saturation
Voltage
Base – Emitter
Saturation Voltage
Test Conditions
CEBO
CCBO
NF
Transistion Frequency
-15
V
IC = –10mA
IB = 0
-30
V
IE = –10mA
IC = 0
-5
V
IC = –1mA
IB = -0.1mA
IC = –10mA
IB = -1mA
IC = –50mA
IB = -5mA
-0.3
IC = –1mA
IB = -0.1mA
-0.75
IC = –10mA
IB = -1mA
IC = –50mA
IB = -5mA
-0.13
-0.1
-0.77
40
80
VCE = -1V
70
130
IC = –10mA
VCE = -1V
90
160
IC = –50mA
VCE = -1V
20
40
IC = –10mA
VCE = -1V
IC = –10mA
f = 100MHz
Collector-Base
IE = 0
Capacitance
f = 1MHz
Turn-off time
rbb’Cb’c
Feedback Time Constant
VCE = -20V
IC = -1mA
VEB = -0.5V
VCB = -10V
VCE = -5V
-0.14
-0.9
V
V
-1.1
VCE = -1V
f = 1MHz
toff
mA
-30
Capacitance
Turn-on time
nA
IC = 10mA
IC = 0
ton
-15
IE = 0
Emitter – Base
Noise Figure
Unit
Tamb = 125°C
—
30
Tamb = -55°C
fT
Max.
VCE = -20V
IC = –100mA
DC Current Gain
Typ.
VBE = 0
IC = –10mA
hFE*
Min.
`
400
550
4
MHz
5.5
pF
2.2
3.5
f = 100MHz
Rg = 100W
3.5
6
dB
IC = -50mA
IB1 = -5mA
20
50
ns
95
160
ns
40
ps
IC = -50mA
IB1 = IB2 =-5mA
IC = -10mA
VCE = -20V
f = 80MHz
*Pulsed: pulse duration = 300ms, duty cycle = 1%
THERMAL CHARACTERISTICS
Rqth(j-case) Thermal Resistance Junction - Case
Rqth(j-amb) Thermal Resistance Junction - Ambient
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
175
486
°C/W
°C/W
Document. 2340
Issue 1
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