SavantIC Semiconductor Product Specification NS50N Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type NS50P APPLICATIONS ·For medium power linear amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 6 A ICM Collector current-Pulse 10 A IB Base current 2 A PC Collector power dissipation TC=25 65 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -65~150 SavantIC Semiconductor Product Specification NS50N Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=30mA; IB=0 VCE(sat) Collector-emitter saturation voltage IC=6A; IB=0.6A 1.5 V VBE Base-emitter on voltage IC=6A ; VCE=4V 2.0 V ICES Collector cut-off current VCE=60V; VEB=0 0.4 mA ICEO Collector cut-off current VCE=30V; IB=0 0.7 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=0.3A ; VCE=4V 50 hFE-2 DC current gain IC=3A ; VCE=4V 15 Transition frequency IC=0.5A ; VCE=10V 3 fT hFE-1 Classifications A B 50-100 80-160 2 60 UNIT V 160 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 NS50N