ADPOW APTGF200U120D Single switch with series diodes npt igbt power module Datasheet

APTGF200U120D
Single Switch
with Series diodes
NPT IGBT Power Module
VCES = 1200V
IC = 200A @ Tc = 80°C
Application
• Zero Current Switching resonant mode
EK
E
C
G
CK
C
EK
G
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
SSOA
Switching Safe Operating Area
Tc = 25°C
Max ratings
1200
275
200
600
±20
1136
Tj = 150°C
600A @ 1200V
Tc = 25°C
Tc = 80°C
Tc = 25°C
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTGF200U120D – Rev 0 July, 2004
E
CK
Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
APTGF200U120D
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
ICES
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
VGE = 0V, IC = 1.5mA
Tj = 25°C
VGE = 0V
VCE = 1200V
Tj = 125°C
Tj = 25°C
VGE =15V
IC = 200A
Tj = 125°C
VGE = VCE, IC = 4mA
VGE = ±20V, VCE = 0V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 200A
R G = 1.2Ω
IF(A V)
Maximum Average Forward Current
50% duty cycle
Diode Forward Voltage
IF = 240A
IF = 480A
IF = 240A
Reverse Recovery Time
Qrr
Reverse Recovery Charge
4.5
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 200A
R G = 1.2Ω
Maximum Repetitive Reverse Voltage
trr
7.0
3.2
4.0
Min
Test Conditions
Typ
Max
1.5
VGS = 15V
VBus = 600V
IC = 200A
VRRM
VF
Min
1200
Min
3.7
Unit
V
mA
V
6.5
±300
V
nA
Typ
13.8
1.32
880
1320
140
800
35
65
320
30
21.6
9.2
35
65
360
40
27.9
12.2
Max
Unit
Typ
Max
nF
nC
ns
mJ
Unit
1200
IF = 240A
VR = 800V
di/dt =800A/µs
IF = 240A
VR = 800V
di/dt =800A/µs
Tc = 70°C
Tj = 125°C
240
2
2.3
1.8
Tj = 25°C
400
Tj = 125°C
470
Tj = 25°C
4.8
Tj = 125°C
16
APT website – http://www.advancedpower.com
A
2.5
V
ns
µC
2–6
APTGF200U120D – Rev 0 July, 2004
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
APTGF200U120D
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.11
0.23
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3–6
APTGF200U120D – Rev 0 July, 2004
Package outline
APTGF200U120D
Typical Performance Curve
Output characteristics (VGE=15V)
250µs Pulse Test
< 0.5% Duty cycle
400
TJ =125°C
200
100
T J=125°C
50
0
2
4
6
VCE, Collector to Emitter Voltage (V)
VGE, Gate to Emitter Voltage (V)
Transfer Characteristics
250µs Pulse Test
< 0.5% Duty cycle
1000
800
600
400
TJ =125°C
200
TJ =25°C
0
0
4
8
12
VGE, Gate to Emitter Voltage (V)
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
7
6
Ic=400A
5
Ic=200A
4
3
2
Ic=100A
1
0
9
10
11
12
13
14
15
VGE, Gate to Emitter Voltage (V)
VCE=240V
IC = 200A
T J = 25°C
16
14
VCE=600V
12
10
VCE =960V
8
6
4
2
0
200
400
600
800
1000 1200 1400
On state Voltage vs Junction Temperature
6
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
5
3
Ic=100A
2
1
0
350
Ic, DC Collector Current (A)
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
125
Ic=400A
Ic=200A
4
-50
Breakdown Voltage vs Junction Temp.
-25
0
25
50
75 100
TJ, Junction Temperature (°C)
Gate Charge
0
16
1.20
1.15
-50
4
Gate Charge (nC)
On state Voltage vs Gate to Emitter Volt.
8
1
2
3
VCE, Collector to Emitter Voltage (V)
18
16
VCE, Collector to Emitter Voltage (V)
1200
9
0
8
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
300
250
200
150
100
50
0
-50
-25
0
25 50 75 100 125 150
TC , Case Temperature (°C)
APT website – http://www.advancedpower.com
4–6
APTGF200U120D – Rev 0 July, 2004
0
Ic, Collector Current (A)
TJ =25°C
150
0
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
TJ =25°C
600
Collector to Emitter Breakdown Voltage
(Normalized)
Output Characteristics (VGE=10V)
200
Ic, Collector Current (A)
Ic, Collector Current (A)
800
APTGF200U120D
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
45
VCE = 600V
RG = 1.2Ω
40
VGE = 15V
35
30
25
0
100
200
300
400
400
VGE=15V,
TJ=125°C
350
300
250
200
500
0
100
ICE, Collector to Emitter Current (A)
200
300
400
500
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
180
50
VCE = 600V
RG = 1.2Ω
140
tf, Fall Time (ns)
tr, Rise Time (ns)
VGE=15V,
TJ =25°C
VCE = 600V
RG = 1.2Ω
100
VGE=15V
60
TJ = 125°C
40
30
TJ = 25°C
VCE = 600V, VGE = 15V, RG = 1.2Ω
20
20
500
80
T J=125°C,
VGE=15V
60
TJ=25°C,
VGE =15V
40
20
0
Switching Energy Losses (mJ)
0
VCE = 600V
VGE = 15V
T J= 125°C
56
Eon, 200A
48
40
Eoff, 200A
32
24
Eon, 100A
16
8
32
Eoff, 100A
0
VCE = 600V
VGE = 15V
RG = 1.2Ω
24
16
TJ = 125°C
TJ = 25°C
8
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
72
500
0
32
100
200
300
400
500
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
VCE = 600V
VGE = 15V
R G = 1.2Ω
24
Eon, 200A
16
Eoff, 200A
Eon, 100A
8
Eoff, 100A
0
0
2.5
5
7.5
10
Gate Resistance (Ohms)
12.5
0
25
50
75
100
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
125
5–6
APTGF200U120D – Rev 0 July, 2004
VCE = 600V
RG = 1.2Ω
100
200
300
400
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
100
64
0
Eoff, Turn-off Energy Loss (mJ)
120
100
200
300
400
ICE, Collector to Emitter Current (A)
Switching Energy Losses (mJ)
Eon, Turn-On Energy Loss (mJ)
0
APTGF200U120D
Minimum Switching Safe Operating Area
700
IC , Collector Current (A)
C, Capacitance (pF)
Capacitance vs Collector to Emitter Voltage
100000
Cies
10000
Coes
1000
Cres
100
0
10
20
30
40
VCE, Collector to Emitter Voltage (V)
600
500
400
300
200
100
0
50
0
400
800
1200
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.08
0.9
0.7
0.06
0.5
0.04
0.3
0.02
0
0.00001
0.1
Single Pulse
0.05
0.0001
0.001
0.01
0.1
1
Operating Frequency vs Collector Current
120
100
80
ZCS
60
V CE = 600V
D = 50%
RG = 1.2Ω
TJ = 125°C
TC = 75°C
40
Hard
switching
20
0
20
60
100
140
180
IC, Collector Current (A)
220
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF200U120D – Rev 0 July, 2004
Fmax, Operating Frequency (kHz)
Rectangular Pulse Duration (Seconds)
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