APTGF200U120D Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 200A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK C EK G Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation SSOA Switching Safe Operating Area Tc = 25°C Max ratings 1200 275 200 600 ±20 1136 Tj = 150°C 600A @ 1200V Tc = 25°C Tc = 80°C Tc = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTGF200U120D – Rev 0 July, 2004 E CK Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration APTGF200U120D All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Series diode ratings and characteristics Symbol Characteristic Test Conditions VGE = 0V, IC = 1.5mA Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 200A Tj = 125°C VGE = VCE, IC = 4mA VGE = ±20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 200A R G = 1.2Ω IF(A V) Maximum Average Forward Current 50% duty cycle Diode Forward Voltage IF = 240A IF = 480A IF = 240A Reverse Recovery Time Qrr Reverse Recovery Charge 4.5 Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 200A R G = 1.2Ω Maximum Repetitive Reverse Voltage trr 7.0 3.2 4.0 Min Test Conditions Typ Max 1.5 VGS = 15V VBus = 600V IC = 200A VRRM VF Min 1200 Min 3.7 Unit V mA V 6.5 ±300 V nA Typ 13.8 1.32 880 1320 140 800 35 65 320 30 21.6 9.2 35 65 360 40 27.9 12.2 Max Unit Typ Max nF nC ns mJ Unit 1200 IF = 240A VR = 800V di/dt =800A/µs IF = 240A VR = 800V di/dt =800A/µs Tc = 70°C Tj = 125°C 240 2 2.3 1.8 Tj = 25°C 400 Tj = 125°C 470 Tj = 25°C 4.8 Tj = 125°C 16 APT website – http://www.advancedpower.com A 2.5 V ns µC 2–6 APTGF200U120D – Rev 0 July, 2004 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage APTGF200U120D Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.11 0.23 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3–6 APTGF200U120D – Rev 0 July, 2004 Package outline APTGF200U120D Typical Performance Curve Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 400 TJ =125°C 200 100 T J=125°C 50 0 2 4 6 VCE, Collector to Emitter Voltage (V) VGE, Gate to Emitter Voltage (V) Transfer Characteristics 250µs Pulse Test < 0.5% Duty cycle 1000 800 600 400 TJ =125°C 200 TJ =25°C 0 0 4 8 12 VGE, Gate to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=400A 5 Ic=200A 4 3 2 Ic=100A 1 0 9 10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V) VCE=240V IC = 200A T J = 25°C 16 14 VCE=600V 12 10 VCE =960V 8 6 4 2 0 200 400 600 800 1000 1200 1400 On state Voltage vs Junction Temperature 6 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 5 3 Ic=100A 2 1 0 350 Ic, DC Collector Current (A) 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 125 Ic=400A Ic=200A 4 -50 Breakdown Voltage vs Junction Temp. -25 0 25 50 75 100 TJ, Junction Temperature (°C) Gate Charge 0 16 1.20 1.15 -50 4 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. 8 1 2 3 VCE, Collector to Emitter Voltage (V) 18 16 VCE, Collector to Emitter Voltage (V) 1200 9 0 8 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 300 250 200 150 100 50 0 -50 -25 0 25 50 75 100 125 150 TC , Case Temperature (°C) APT website – http://www.advancedpower.com 4–6 APTGF200U120D – Rev 0 July, 2004 0 Ic, Collector Current (A) TJ =25°C 150 0 VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle TJ =25°C 600 Collector to Emitter Breakdown Voltage (Normalized) Output Characteristics (VGE=10V) 200 Ic, Collector Current (A) Ic, Collector Current (A) 800 APTGF200U120D Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 45 VCE = 600V RG = 1.2Ω 40 VGE = 15V 35 30 25 0 100 200 300 400 400 VGE=15V, TJ=125°C 350 300 250 200 500 0 100 ICE, Collector to Emitter Current (A) 200 300 400 500 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current Current Fall Time vs Collector Current 180 50 VCE = 600V RG = 1.2Ω 140 tf, Fall Time (ns) tr, Rise Time (ns) VGE=15V, TJ =25°C VCE = 600V RG = 1.2Ω 100 VGE=15V 60 TJ = 125°C 40 30 TJ = 25°C VCE = 600V, VGE = 15V, RG = 1.2Ω 20 20 500 80 T J=125°C, VGE=15V 60 TJ=25°C, VGE =15V 40 20 0 Switching Energy Losses (mJ) 0 VCE = 600V VGE = 15V T J= 125°C 56 Eon, 200A 48 40 Eoff, 200A 32 24 Eon, 100A 16 8 32 Eoff, 100A 0 VCE = 600V VGE = 15V RG = 1.2Ω 24 16 TJ = 125°C TJ = 25°C 8 0 100 200 300 400 500 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 72 500 0 32 100 200 300 400 500 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Junction Temp. VCE = 600V VGE = 15V R G = 1.2Ω 24 Eon, 200A 16 Eoff, 200A Eon, 100A 8 Eoff, 100A 0 0 2.5 5 7.5 10 Gate Resistance (Ohms) 12.5 0 25 50 75 100 TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 125 5–6 APTGF200U120D – Rev 0 July, 2004 VCE = 600V RG = 1.2Ω 100 200 300 400 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 100 64 0 Eoff, Turn-off Energy Loss (mJ) 120 100 200 300 400 ICE, Collector to Emitter Current (A) Switching Energy Losses (mJ) Eon, Turn-On Energy Loss (mJ) 0 APTGF200U120D Minimum Switching Safe Operating Area 700 IC , Collector Current (A) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 100000 Cies 10000 Coes 1000 Cres 100 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 600 500 400 300 200 100 0 50 0 400 800 1200 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.08 0.9 0.7 0.06 0.5 0.04 0.3 0.02 0 0.00001 0.1 Single Pulse 0.05 0.0001 0.001 0.01 0.1 1 Operating Frequency vs Collector Current 120 100 80 ZCS 60 V CE = 600V D = 50% RG = 1.2Ω TJ = 125°C TC = 75°C 40 Hard switching 20 0 20 60 100 140 180 IC, Collector Current (A) 220 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTGF200U120D – Rev 0 July, 2004 Fmax, Operating Frequency (kHz) Rectangular Pulse Duration (Seconds)