Analog Power AM2359P P-channel 60-v (d-s) mosfet Datasheet

Analog Power
AM2359P
P-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
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PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.381 @ VGS = -10V
-60
0.561 @ VGS = -4.5V
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOT-23 saves board space
Fast switching speed
High performance trench technology
ID (A)
1.6
1.3
G
D
S
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
VDS
-60
Drain-Source Voltage
V
VGS
±20
Gate-Source Voltage
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
1.7
ID
IDM
±15
IS
-1.7
o
TA=25 C
a
Power Dissipation
o
TA=70 C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
a
Maximum Junction-to-Ambient
A
1.4
A
1.3
PD
W
0.8
o
TJ, Tstg -55 to 150
C
Symbol Maximum Units
t <= 5 sec
Steady-State
RTHJA
100
166
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM2359_H
Analog Power
AM2359P
SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = -250 uA
Min
Limits
Unit
Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
A
On-State Drain Current
Drain-Source Breakdown Voltage
A
Drain-Source On-Resistance
A
Forward Tranconductance
Diode Forward Voltage
IDSS
ID(on)
VBR(DSS)
rDS(on)
gfs
VSD
-1
-2.1
VDS = 0 V, VGS = ±20 V
-3.5
±100
VDS = -48 V, VGS = 0 V
-1
-10
o
VDS = -48 V, VGS = 0 V, TJ = 55 C
VDS = -5 V, VGS = -10 V
VGS = 0, ID = -1 mA
VGS = -10 V, ID = -1.6 A
VGS = -4.5 V, ID = -1.3 A
V
nA
uA
-8
-60
A
V
300
450
VDS = -15 V, ID = -1.6 A
IS = -2.5 A, VGS = 0 V
381
561
mΩ
8
S
V
-1.2
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -30 V, VGS = -4.5 V,
ID = -1.6 A
VDD = -30 V, RL = 30 Ω , ID = -1 A,
VGEN = -10 V, RG = 6Ω
18
5
2
8
10
35
12
nC
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM2359_H
Analog Power
AM2359P
Typical Electrical Characteristics
12
10
25oC
T A = 125oC
VGS = -10V
8
9
6
ID - Drain Current (A)
ID, - Drain Current (A)
-55oC
-4.5V
V
3
6
4
2
0
0
0
1
2
3
4
5
2.5
3.5
V DS - Drain-to--Source Voltage (V)
Output Characteristics
800.0
VGS=-4.5V
CISS
1.8
C - Capacitance (pF)
rDS(ON) - Normalized On-Resistance
5.5
Transfer Characteristics
2
1.6
1.4
1.2
600.0
400.0
COSS
200.0
-10V
1
CRSS
0.0
0.8
0
3
6
9
0
12
15
30
45
60
V DS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
rDS(ON) - On-Resistance Normalized
-10
-8
Vgs Voltage ( V )
4.5
V GS - Gate-to-Source Voltage (V)
-6
-4
-2
0
VGS = -10V
1.4
1.2
1
0.8
0.6
0
2
4
6
8
10
12
-50
Qg, Charge (nC)
0
25
50
75
100
125
o
TJ - Junction Temperature ( C)
Gate Charge
On-Resistance vs. Junction Temperature
3
PRELIMINARY
-25
Publication Order Number:
DS-AM2359_H
150
Analog Power
AM2359P
Typical Electrical Characteristics
0.35
rDS(ON) - On-Resistance (OHM)
10
IS - Source Current (A)
1
T A = 125oC
0.1
25oC
0.01
0.001
0.3
0.25
0.2
0.15
0.1
0.05
0.0001
0
0.2
0.4
0.6
0.8
1
2
1.2
4
6
8
Source-Drain Diode Forward Voltage
On-Resistance vs Gate-to-Source Voltage
50
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
3.2
V GS(th), - Variance (V)
3
P(pk), PEAK TRANSIENT POWER (W)
ID = -250µA
2.8
2.6
2.4
2.2
2
1.8
-50
-25
0
25
50
75
10
V GS - Gate-to-Source Voltage (V)
V SD - Source-to-Drain Voltage (V)
100
125
150
o
TJ - Temperature ( C)
40
30
20
10
0
0.001
0.01
Threshold Voltage
0.1
1
t1, TIME (SEC)
10
100
Single Pulse Power
Normalized Thermal Transient Junction to Ambient
1
0.1
0.01
D = 0.5
R q J A(t) = r(t) + R q J A
R q J A = 125 °C /W
0.2
0.1
0.0
P (pk
0.02
0.01
t1
t2
T J - T A = P * R q J A(t)
Duty C yc le , D = t1 / t2
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIM E (s e c )
Normailized Thermal Transient Impedance, Junction-to-Ambitent
4
PRELIMINARY
Publication Order Number:
DS-AM2359_H
Analog Power
AM2359P
Package Information
5
PRELIMINARY
Publication Order Number:
DS-AM2359_H
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