Analog Power AM2359P P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.381 @ VGS = -10V -60 0.561 @ VGS = -4.5V Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology ID (A) 1.6 1.3 G D S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS -60 Drain-Source Voltage V VGS ±20 Gate-Source Voltage o TA=25 C a Continuous Drain Current o TA=70 C b Pulsed Drain Current a Continuous Source Current (Diode Conduction) 1.7 ID IDM ±15 IS -1.7 o TA=25 C a Power Dissipation o TA=70 C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient A 1.4 A 1.3 PD W 0.8 o TJ, Tstg -55 to 150 C Symbol Maximum Units t <= 5 sec Steady-State RTHJA 100 166 o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM2359_H Analog Power AM2359P SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = -250 uA Min Limits Unit Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current A On-State Drain Current Drain-Source Breakdown Voltage A Drain-Source On-Resistance A Forward Tranconductance Diode Forward Voltage IDSS ID(on) VBR(DSS) rDS(on) gfs VSD -1 -2.1 VDS = 0 V, VGS = ±20 V -3.5 ±100 VDS = -48 V, VGS = 0 V -1 -10 o VDS = -48 V, VGS = 0 V, TJ = 55 C VDS = -5 V, VGS = -10 V VGS = 0, ID = -1 mA VGS = -10 V, ID = -1.6 A VGS = -4.5 V, ID = -1.3 A V nA uA -8 -60 A V 300 450 VDS = -15 V, ID = -1.6 A IS = -2.5 A, VGS = 0 V 381 561 mΩ 8 S V -1.2 Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd td(on) tr td(off) tf VDS = -30 V, VGS = -4.5 V, ID = -1.6 A VDD = -30 V, RL = 30 Ω , ID = -1 A, VGEN = -10 V, RG = 6Ω 18 5 2 8 10 35 12 nC nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. 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APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM2359_H Analog Power AM2359P Typical Electrical Characteristics 12 10 25oC T A = 125oC VGS = -10V 8 9 6 ID - Drain Current (A) ID, - Drain Current (A) -55oC -4.5V V 3 6 4 2 0 0 0 1 2 3 4 5 2.5 3.5 V DS - Drain-to--Source Voltage (V) Output Characteristics 800.0 VGS=-4.5V CISS 1.8 C - Capacitance (pF) rDS(ON) - Normalized On-Resistance 5.5 Transfer Characteristics 2 1.6 1.4 1.2 600.0 400.0 COSS 200.0 -10V 1 CRSS 0.0 0.8 0 3 6 9 0 12 15 30 45 60 V DS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.6 rDS(ON) - On-Resistance Normalized -10 -8 Vgs Voltage ( V ) 4.5 V GS - Gate-to-Source Voltage (V) -6 -4 -2 0 VGS = -10V 1.4 1.2 1 0.8 0.6 0 2 4 6 8 10 12 -50 Qg, Charge (nC) 0 25 50 75 100 125 o TJ - Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature 3 PRELIMINARY -25 Publication Order Number: DS-AM2359_H 150 Analog Power AM2359P Typical Electrical Characteristics 0.35 rDS(ON) - On-Resistance (OHM) 10 IS - Source Current (A) 1 T A = 125oC 0.1 25oC 0.01 0.001 0.3 0.25 0.2 0.15 0.1 0.05 0.0001 0 0.2 0.4 0.6 0.8 1 2 1.2 4 6 8 Source-Drain Diode Forward Voltage On-Resistance vs Gate-to-Source Voltage 50 SINGLE PULSE RqJA = 125oC/W TA = 25oC 3.2 V GS(th), - Variance (V) 3 P(pk), PEAK TRANSIENT POWER (W) ID = -250µA 2.8 2.6 2.4 2.2 2 1.8 -50 -25 0 25 50 75 10 V GS - Gate-to-Source Voltage (V) V SD - Source-to-Drain Voltage (V) 100 125 150 o TJ - Temperature ( C) 40 30 20 10 0 0.001 0.01 Threshold Voltage 0.1 1 t1, TIME (SEC) 10 100 Single Pulse Power Normalized Thermal Transient Junction to Ambient 1 0.1 0.01 D = 0.5 R q J A(t) = r(t) + R q J A R q J A = 125 °C /W 0.2 0.1 0.0 P (pk 0.02 0.01 t1 t2 T J - T A = P * R q J A(t) Duty C yc le , D = t1 / t2 S INGLE P ULS E 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIM E (s e c ) Normailized Thermal Transient Impedance, Junction-to-Ambitent 4 PRELIMINARY Publication Order Number: DS-AM2359_H Analog Power AM2359P Package Information 5 PRELIMINARY Publication Order Number: DS-AM2359_H