AO4490 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4490/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a load switch and general purpose applications. AO4490 and AO4490L are electrically identical. -RoHS Compliant -AO4490L is Halogen Free VDS (V) = 30V (VGS = 10V) ID = 16A RDS(ON) < 7.2mΩ (VGS = 10V) RDS(ON) < 10mΩ (VGS = 4.5V) ESD protected UIS Tested! Rg, Ciss,Coss,Crss Tested S S S G D D D D D G SOIC-8 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current AF Pulsed Drain Current Maximum 30 Units V ±20 V 16 TA=70°C B A 13 ID IDM 120 Avalanche Current G IAR 30 A Repetitive avalanche energy L=0.3mH G EAR 135 mJ TA=25°C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. 2.8 PD TA=70°C TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 1.8 RθJA RθJL Typ 32 62 18 °C Max 45 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4490 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±16V 1 5 10 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 120 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=16A TJ=125°C VGS=4.5V, ID=12A Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=16A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Units V TJ=55°C gFS Max 30 VDS=30V, VGS=0V IDSS IS Typ 1.8 VGS=0V, VDS=0V, f=1MHz µA 2.5 V A 6 7.2 8.5 10 8 10 mΩ 1.0 V 4 A 2170 pF mΩ 55 0.70 1803 VGS=0V, VDS=15V, f=1MHz µA S 387 pF 238 pF 1.3 2 Ω 36 48 nC 19 nC 3.9 nC Gate Drain Charge 8.7 nC Turn-On DelayTime 7.6 ns 6.4 ns 27 ns 8.5 ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, ID=16A VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=16A, dI/dt=100A/µs 27 Qrr Body Diode Reverse Recovery Charge IF=16A, dI/dt=100A/µs 17 33 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse. Rev2: Feb 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4490 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 10V 30 4.5V 4V 5V VDS=5V 25 90 20 VGS=3.5V ID(A) ID (A) 6V 60 125° 15 25°C 10 30 3V -40°C 5 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Figure 1: On-Region Characteristics 3 3.5 4 Normalized On-Resistance 1.6 VGS=4.5V 8.0 RDS(ON) (mΩ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 10.0 6.0 VGS=10V 4.0 2.0 VGS=10V ID=16A 1.4 1.2 VGS=4.5V ID=12A 1 0.8 0.6 0 5 10 15 20 25 30 -60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -30 0 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 20 ID=16 1.0E+01 15 125°C 1.0E+00 IS (A) RDS(ON) (mΩ) 2 125°C 10 25°C 1.0E-01 1.0E-02 -40°C 1.0E-03 5 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4490 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 10 VDS=15V ID=16A 3000 Capacitance (pF) VGS (Volts) 8 6 4 2500 Ciss 2000 1500 Coss 1000 2 Crss 500 0 0 0 10 20 30 40 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 10 30 100 10µs 80 RDS(ON) limited 10.0 10ms 100µ 10s 1ms 1.0 1s DC Power (W) ID (Amps) 100.0 TJ(Max)=150°C TA=25°C 0.1 0.0 0.01 0.1 TJ(Max)=150°C TA=25°C 60 40 20 1 VDS (Volts) 10 0 0.0001 0.001 100 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4490 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 Power Dissipation (W) TA=10S 2 1 TA=Steady-State 0 0 25 50 75 100 125 150 175 T Ambient (°C) Figure 12: Power De-rating (Note A) Alpha & Omega Semiconductor, Ltd. www.aosmd.com