TrenchMVTM Power MOSFET IXTH130N10T IXTQ130N10T VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 100V = 130A Ω ≤ 9.1mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ 100 V VGSM Transient ± 20 V ID25 TC = 25°C 130 A ILRMS Lead Current Limit, RMS 75 A IDM TC = 25°C, pulse width limited by TJM 300 A IA TC = 25°C 65 A EAS TC = 25°C 500 mJ PD TC = 25°C 360 W -55 ... +175 °C TJ TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6.0 5.5 g g TL 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-247)(TO-3P) Weight TO-247 TO-3P G D S (TAB) TO-3P (IXTQ) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z z Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 100 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 z z 4.5 V 5 μA 250 μA 9.1 mΩ Applications z z z z © 2008 IXYS CORPORATION, All rights reserved Easy to mount Space savings High power density V ±200 nA TJ = 150°C z Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS99708A(07/08) IXTH130N10T IXTQ130N10T Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. gfs 55 VDS= 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz C rss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 25A RG = 5Ω (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 25A Qgd Typ. TO-247 (IXTH) Outline Max. 93 S 5080 pF 635 pF 95 pF 30 ns 47 ns 44 ns 28 ns 104 nC 30 nC 29 nC 0.42 °C/W RthJC RthCH 0.25 °C/W Source-Drain Diode Symbol Test Conditions TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 130 A ISM Repetitive, pulse width limited by TJM 350 A VSD IF = 25A, VGS = 0V, Note 1 1.0 V t rr IRM Q rr IF = 25A, VGS = 0V -di/dt = 100A/μs VR = 50V 67 ns 4.7 A 160 nC 1 2 ∅P 3 e Terminals: 1 - Gate 2 - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 2.2 2.54 .087 .102 A1 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 TO-3P (IXTQ) Outline Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH130N10T IXTQ130N10T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 280 130 VGS = 10V 8V 120 110 VGS = 10V 9V 240 100 ID - Amperes ID - Amperes 8V 200 90 80 7V 70 60 50 40 160 120 7V 80 30 6V 20 40 6V 10 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1 2 3 4 130 7 8 9 10 2.8 VGS = 10V 9V 8V 120 110 2.4 RDS(on) - Normalized 90 80 7V 70 60 50 VGS = 10V 2.6 100 ID - Amperes 6 Fig. 4. RDS(on) Normalized to ID = 65A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 6V 40 2.2 I D = 130A 2.0 1.8 I D = 65A 1.6 1.4 1.2 1.0 30 5V 20 0.8 0.6 10 0 0.4 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 65A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 80 3.0 VGS = 10V 2.8 TJ = 175ºC 15V - - - - 2.6 70 60 2.4 ID - Amperes RDS(on) - Normalized 5 VDS - Volts VDS - Volts 2.2 2.0 1.8 1.6 1.4 TJ = 25ºC 50 40 30 20 1.2 10 1.0 0 0.8 0 40 80 120 160 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 200 240 280 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTH130N10T IXTQ130N10T Fig. 8. Transconductance Fig. 7. Input Admittance 130 270 120 240 TJ = - 40ºC 25ºC 150ºC 100 g f s - Siemens ID - Amperes 210 TJ = - 40ºC 110 180 150 120 90 90 25ºC 80 70 60 150ºC 50 40 30 60 20 30 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 20 40 60 VGS - Volts 80 100 120 140 160 180 200 220 90 100 110 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 270 VDS = 50V 9 240 I D = 25A 8 210 I G = 10mA 180 VGS - Volts IS - Amperes 7 150 120 TJ = 150ºC 90 6 5 4 3 TJ = 25ºC 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 VSD - Volts 40 50 60 70 80 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads 30 Coss 100 0.10 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTH130N10T IXTQ130N10T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 62 65 RG = 5Ω VGS = 10V 54 VDS = 50V 55 50 45 40 I D RG = 5Ω 58 VGS = 10V t r - Nanoseconds t r - Nanoseconds 60 = 50A VDS = 50V 50 TJ = 25ºC 46 42 38 34 35 TJ = 125ºC 30 I 30 D = 25A 26 25 22 25 35 45 55 65 75 85 95 105 115 25 125 30 35 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 53 38 80 38 I D = 25A 70 35 60 32 50 29 40 26 30 23 20 10 12 14 16 18 36 60 I D = 25A 34 56 32 52 I D = 50A 30 44 26 25 20 35 45 RG - Ohms 38 66 RG = 5Ω, VGS = 10V 54 30 50 46 TJ = 25ºC 26 24 35 40 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 45 50 t f - Nanoseconds t f - Nanoseconds 58 t d(off) - Nanoseconds td(off) - - - - 30 95 105 115 40 125 170 tr 90 62 TJ = 125ºC 25 85 25A < I td(on) - - - - D < 50A 150 TJ = 125ºC, VGS = 10V VDS = 50V 80 130 70 110 I D = 25A 60 90 I 50 42 40 38 30 D = 50A 70 t d(off) - Nanoseconds 36 28 75 100 70 VDS = 50V 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 40 32 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 34 48 28 20 8 tf 64 RG = 5Ω, VGS = 10V t d(off) - Nanoseconds 41 t d(on) - Nanoseconds 44 90 6 td(off) - - - - VDS = 50V I D = 50A 4 68 tf 47 VDS = 50V 100 50 40 50 TJ = 125ºC, VGS = 10V 110 t r - Nanoseconds td(on) - - - - t f - Nanoseconds tr 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 130 120 40 ID - Amperes 50 30 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_130N10T(V3)07-29-08-A