IRF IRF7410TRPBF Ultra low on-resistance Datasheet

PD - 96028B
IRF7410PbF
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
VDSS
RDS(on) max
ID
-12V
7mΩ@VGS = -4.5V
-16A
9mΩ@VGS = -2.5V
13mΩ@VGS = -1.8V
-13.6A
-11.5A
Description
These P-Channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
SO-8
Top View
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-12
-16
-13
-65
2.5
1.6
20
±8
-55 to +150
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
Max.
Units
50
°C/W
1
11/17/08
IRF7410PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min.
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
Typ. Max. Units
-12
–––
–––
–––
0.006
–––
V/°C Reference to 25°C, ID = -1mA
–––
7
VGS = -4.5V, ID = -16A
–––
–––
9
–––
–––
13
VGS = -1.8V, ID
V
VDS = VGS, ID = -250µA
mV/°C
S
VDS = -10V, ID = -16A
VGS(th)
Gate Threshold Voltage
-0.4
–––
-0.9
Gate Threshold Voltage Coefficient
Forward Transconductance
–––
55
-3.09
–––
–––
–––
Drain-to-Source Leakage Current
–––
–––
-1.0
–––
–––
-25
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
Qg
Total Gate Charge
–––
91
Qgs
Gate-to-Source Charge
–––
18
Qgd
Gate-to-Drain ("Miller") Charge
–––
25
td(on)
Turn-On Delay Time
–––
13
tr
Rise Time
–––
12
18
td(off)
Turn-Off Delay Time
–––
271
407
tf
Fall Time
–––
200
300
Ciss
Input Capacitance
–––
8676
–––
Coss
Output Capacitance
–––
2344
–––
Crss
Reverse Transfer Capacitance
–––
1604
–––
IGSS
Conditions
VGS = 0V, ID = -250µA
–––
∆VGS(th)/∆TJ
gfs
IDSS
V
mΩ
VGS = -2.5V, ID
d
= -13.6A d
= -11.5A d
VDS = -9.6V, VGS = 0V
µA
nA
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8V
VGS = 8V
ID = -16A
–––
nC
VDS =-9.6V
VGS = -4.5V
20
d
VDD = -6V VGS = -4.5V
ns
ID =-1.0A
RD = 6Ω
RG = 6Ω
VGS = 0V
pF
d
VDS = -10V
ƒ = 1.0 MHz
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min.
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
(Body Diode)
Diode Forward Voltage
trr
Reverse Recovery Time
–––
Qrr
Reverse Recovery Charge
–––
c
Typ. Max. Units
Conditions
MOSFET symbol
–––
–––
-2.5
–––
–––
-65
–––
–––
-1.2
V
97
145
134
201
ns
µC
A
showing the
integral reverse
D
G
S
p-n junction diode.
TJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C
IF = -2.5A
di/dt = -100A/µs
d
d
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
Surface mounted on 1 in square Cu board, t ≤ 10sec.
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IRF7410PbF
100
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
ID, Drain-to-Source Current (A)
TOP
10
BOTTOM
-1.0V
1
TOP
ID, Drain-to-Source Current (A)
100
BOTTOM
10
-1.0V
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 25°C
0.1
Tj = 150°C
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
T J = 25°C
0.1
VDS = -10V
≤60µs PULSE WIDTH
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
1
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 150°C
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
1.8
2.0
ID = -16A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7410PbF
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
12000
10000
Ciss
Coss = Cds + Cgd
8000
6000
4000
Coss
Crss
2000
6
-VGS , Gate-to-Source Voltage (V)
14000
4
3
2
1
0
10
100
0
20
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
60
80
100
120
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
40
QG , Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
100
10
TJ = 25 ° C
1
0.1
0.2
0.4
0.6
0.8
Fig 7. Typical Source-Drain Diode
Forward Voltage
100us
1ms
10
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
-VSD ,Source-to-Drain Voltage (V)
4
V DS=-9.6V
5
0
1
ID = -16A
1.0
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7410PbF
16
VDS
-ID , Drain Current (A)
VGS
12
RD
D.U.T.
RG
-
+
VDD
VGS
8
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
td(on)
tr
t d(off)
tf
VGS
0
25
50
75
100
125
TC , Case Temperature ( °C)
150
10%
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7410PbF
RDS ( on ) , Drain-to-Source On Resistance Ω
( )
(
RDS(on), Drain-to -Source On ResistanceΩ)
0.010
0.008
0.006
ID = -16A
0.004
0.002
0.0
2.0
4.0
6.0
8.0
0.02
0.015
VGS = -1.8V
0.01
VGS = -2.5V
0.005
VGS = -4.5V
0
0.0
10.0 20.0 30.0 40.0 50.0 60.0 70.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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IRF7410PbF
700
1.0
600
500
Power (W)
-VGS(th) ( V )
0.8
ID = -250µA
0.6
400
300
200
0.4
100
0
0.2
-75
-50
-25
0
25
50
75
100
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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125
150
0.0001
0.0010
0.0100 0.1000
1.0000 10.0000 100.0000
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF7410PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
(;$03/(7+,6,6$1,5) 026)(7
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5(&7,),(5
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)
'$7(&2'( <::
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< /$67',*,72)7+(<($5
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$ $66(0%/<6,7(&2'(
/27&2'(
3$57180%(5
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF7410PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/2008
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9

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