ON NTTFS4985NF Power mosfet Datasheet

NTTFS4985NF
Power MOSFET
30 V, 64 A, Single N−Channel, WDFN8
Features
•
•
•
•
•
Integrated Schottky Diode
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
ID MAX
3.5 mW @ 10 V
30 V
Applications
•
•
•
•
RDS(on) MAX
64 A
5.2 mW @ 4.5 V
CPU Power Delivery
Synchronous Rectification for DC−DC Converters
Low Side Switching
Telecom Secondary Side Rectification
N−Channel MOSFET
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
22
A
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
Power Dissipation RqJA
(Note 1)
TA = 25°C
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
TA = 85°C
S
15.9
PD
2.69
MARKING DIAGRAM
W
1
S
S
S
G
1
ID
TA = 85°C
Steady
State
32.4
A
23.4
TA = 25°C
PD
5.85
W
TA = 25°C
ID
16.3
A
TA = 85°C
TA = 25°C
PD
1.47
W
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
ID
64
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
22.73
TC = 85°C
TA = 25°C, tp = 10 ms
WDFN8
(m8FL)
CASE 511AB
4985
A
Y
WW
G
11.7
Power Dissipation
RqJA (Note 2)
Pulsed Drain Current
G
4985
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
46
ORDERING INFORMATION
W
Device
Package
Shipping†
WDFN8
(Pb−Free)
1500 / Tape &
Reel
IDM
192
A
TJ,
Tstg
−55 to
+150
°C
NTTFS4985NFTAG
IS
32
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 32 Apk, L = 0.1 mH, RG = 25 W)
EAS
52
mJ
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
TL
260
°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm2.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 2
1
Publication Order Number:
NTTFS4985NF/D
NTTFS4985NF
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
5.5
°C/W
Junction−to−Ambient – Steady State (Note 3)
RqJA
46.4
Junction−to−Ambient – Steady State (Note 4)
RqJA
84.8
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
RqJA
21.4
3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm2.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
V
15
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 24 V
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
TJ = 25°C
mV/°C
500
mA
±100
nA
2.3
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
gFS
1.6
5.2
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.2
ID = 20 A
2.8
ID = 10 A
2.8
ID = 20 A
4.16
ID = 10 A
4.13
VDS = 1.5 V, ID = 10 A
mV/°C
3.5
mW
5.2
34
S
2075
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
46
Total Gate Charge
QG(TOT)
13.6
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
876
nC
2.0
VGS = 4.5 V, VDS = 15 V, ID = 20 A
5.8
4.1
VGS = 10 V, VDS = 15 V, ID = 20 A
29.4
nC
11
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
24
20
5.4
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS4985NF
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
ns
8.5
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
24
25
4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.4
TJ = 125°C
0.33
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 2 A
35.7
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 2 A
0.7
V
ns
18.2
17.5
QRR
32
nC
Source Inductance
LS
0.65
nH
Drain Inductance
LD
PACKAGE PARASITIC VALUES
Gate Inductance
LG
Gate Resistance
RG
0.20
TA = 25°C
1.5
1.0
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTTFS4985NF
TYPICAL PERFORMANCE CURVES
110
VGS = 3.8 V
4.0 V
3.4 V
105
4.4 V to 4.5 V
90
3.2 V
75
7.5 V to 10 V
3.0 V
60
45
2.8 V
30
2.6 V
2.4 V
0
80
70
60
TJ = 125°C
50
40
TJ = 25°C
30
TJ = −55°C
20
10
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS = 5 V
90
1
2
3
4
1.5
2
2.5
3
3.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.030
ID = 30 A
TJ = 25°C
0.025
0.020
0.015
0.010
0.005
0
2.0
1
5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
4.2 V
120
15
5.50E−03
5.25E−03
5.00E−03
4.75E−03
4.50E−03
4.25E−03
4.00E−03
3.75E−03
3.50E−03
3.25E−03
3.00E−03
2.75E−03
2.50E−03
2.25E−03
10
4
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
5
20
35
50
65
80
95
110 125 140 155
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
1.5
1.00E−01
VGS = 0 V
ID = 20 A
VGS = 10 V
TJ = 150°C
1.4
IDSS, LEAKAGE (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
100
3.6 V
135
ID, DRAIN CURRENT (A)
150
1.3
1.2
1.1
1
0.9
0.8
1.00E−02
TJ = 125°C
1.00E−03
1.00E−04
TJ = 25°C
0.7
0.6
−50
1.00E−05
−25
0
25
50
75
100
125
150
0
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTTFS4985NF
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
VGS, GATE−TO−SOURCE VOLTAGE
(V)
C, CAPACITANCE (pF)
TYPICAL PERFORMANCE CURVES
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
0
5
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
8
6
Qgs
4
ID = 30 A
TJ = 25°C
VDD = 15 V
VGS = 10 V
0
Figure 7. Capacitance Variation
2
4
6 8 10 12 14 16 18 20 22 24 26 28 30
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
10
VDD = 15 V
ID = 10 A
VGS = 10 V
VGS = 0 V
TJ = 25°C
9
IS, SOURCE CURRENT (A)
t, TIME (ns)
Qgd
2
0
30
QT
10
td(off)
100
tf
tr
10
td(on)
8
7
6
5
4
3
2
1
1
1
10
100
0.3
0.4
0.5
0.6
0.7
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10 ms
100 ms
10
1 ms
10 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
dc
0.01
1
10
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
0.2
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
VGS = 20 V
Single Pulse
TC = 25°C
0.1
0.1
RG, GATE RESISTANCE (W)
1000
100
0
0.0
55
50
ID = 32 A
45
40
35
30
25
20
15
10
5
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTTFS4985NF
TYPICAL PERFORMANCE CURVES
100
r(t)
(°C/W)
10
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (s)
Figure 13. Thermal Response
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6
1
10
100
1000
NTTFS4985NF
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
B
D1
2X
0.20 C
8 7 6 5
4X
q
E1 E
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
0.10 C
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
DETAIL A
6X
C
e
SEATING
PLANE
DETAIL A
8X
e/2
L
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
0.65
PITCH
PACKAGE
OUTLINE
K
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
4X
0.66
M
E3
8
G
MILLIMETERS
MIN
NOM
MAX
0.80
0.70
0.75
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
3.15
2.95
3.05
2.24
1.98
2.11
3.30 BSC
3.15
2.95
3.05
1.73
1.47
1.60
0.23
0.30
0.40
0.65 BSC
0.51
0.30
0.41
0.95
0.65
0.80
0.56
0.30
0.43
0.20
0.06
0.13
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
1
E2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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NTTFS4985NF/D