H5N1503P Silicon N Channel MOS FET High Speed Power Switching REJ03G0186-0100Z Rev.1.00 Mar.10.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D 1. Gate 2. Drain (Flange) 3. Source G S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg 150 ±30 70 210 70 35 91.8 150 0.833 150 –55 to +150 V V A A A A mJ W °C/W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Rev.1.00, Mar.10.2004, page 1 of 6 H5N1503P Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage V(BR)DSS IDSS IGSS VGS(off) 150 — — 3.0 — — — — — 1 ±0.1 4.0 V µA µA V ID = 10 mA, VGS = 0 VDS = 150 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time RDS(on) 27 — 46 0.022 — 0.027 S Ω ID = 35 A, VDS = 10 V Note4 ID = 35 A, VGS = 10 VNote4 Ciss Coss Crss td(on) tr td(off) — — — — — — 5100 770 140 60 290 200 — — — — — — pF pF pF ns ns ns VDS = 25 V VGS = 0 f = 1 MHz Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time tf Qg Qgs Qgd VDF trr — — — — — — 190 135 30 60 1.1 180 — — — — 1.7 — ns nC nC nC V ns Body-Drain diode reverse recovery charge Qrr — 1.2 — µC Notes: 4. Pulse test Rev.1.00, Mar.10.2004, page 2 of 6 ID = 35 A VGS = 10 V RL = 2.14 Ω Rg = 10 Ω VDD = 120 V VGS = 10 V ID = 70 A IF = 70 A, VGS = 0 Note4 IF = 70 A, VGS = 0 diF/dt = 100 A/µs H5N1503P Main Characteristics Power vs. Temperature Derating ID (A) 300 150 100 100 50 PW DC 30 Drain Current Pch (W) Channel Dissipation Maximum Safe Operation Area 1000 200 er 10 1s ho t) (T 25 Operation in 1 this area is limited by RDS(on) °C ) 0.3 0 50 100 Case Temperature Ta = 25°C 150 200 1 Tc (°C) VDS = 10 V Pulse Test 6.5 V 80 6V 60 40 5.5 V 20 VGS = 5 V ID (A) 8V 200 Drain Current 10 V 30 3 10 100 300 1000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics Typical Output Characteristics 100 ID (A) s( 3 µs s m at ion 0µ s 10 c= 0.1 Drain Current Op = 10 10 1m 160 120 80 40 Tc = 75°C Pulse Test 0 4 8 12 Drain to Source Voltage 0 16 20 VDS (V) Drain to Source Saturation Voltage VDS(on) (V) 2.5 Pulse Test 2 I D = 70 A 1.5 Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage 25°C –25°C 2 4 6 Gate to Source Voltage 8 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 0.2 Pulse Test VGS = 10 V 0.1 0.05 1 35 A 0.02 0.5 10 A 0 0.01 12 4 8 Gate to Source Voltage Rev.1.00, Mar.10.2004, page 3 of 6 16 20 VGS (V) 1 2 5 10 20 50 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 0.100 Pulse Test Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) H5N1503P V GS = 10 V 0.080 I D = 70 A 0.060 0.040 35 A 10 A 0.020 0 –40 0 40 80 120 Case Temperature Tc (°C) 100 50 Tc = –25°C 20 10 25°C 5 75°C 2 1 V DS = 10 V Pulse Test 0.5 0.2 0.2 160 0.5 1 500 20000 Capacitance C (pF) 50000 Reverse Recovery Time trr (ns) 1000 200 100 50 10 0.1 Ciss 2000 1000 Coss 500 200 Crss 100 50 0 20 40 60 Drain to Source Voltage V DS = 30 V 60 V 120 V VGS VDD 16 12 8 V DS = 120 V 60 V 30 V 40 80 120 160 Gate Charge Qg (nC) Rev.1.00, Mar.10.2004, page 4 of 6 4 0 200 80 100 VDS (V) Switching Characteristics 10000 Switching Time t (ns) I D = 70 A VGS (V) 20 Gate to Source Voltage VDS (V) Drain to Source Voltage 0 ID (A) 5000 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 180 60 Drain Current 50 100 10000 di / dt = 100 A / µs V GS = 0, Ta = 25°C 240 120 10 20 VGS = 0 f = 1 MHz Dynamic Input Characteristics 300 5 Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time 20 2 V GS = 10 V, V DD = 75 V PW = 5 µs, duty < 1 % R G =10 Ω tf 1000 tr t d(off) tf 100 t d(on) tr 10 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 H5N1503P Gate to Source Cutoff Voltage vs. Case Temperature Reverse Drain Current vs. Source to Drain Voltage 5 Reverse Drain Current 160 120 V GS = 0 V 80 10 V 40 5V Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 Gate to Source Cutoff Voltage V GS(off) (V) IDR (A) 200 V DS = 10 V 4 I D = 10mA 3 1mA 0.1mA 2 1 0 -50 VSD (V) 0 50 100 150 Case Temperature Tc (°C) 200 Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 0.833°C/W, Tc = 25°C 0.1 0.05 PDM 0.03 0.02 1 0.0 0.01 10 µ D= e PW uls p ot T h 1s PW T 100 µ 1m 10 m 100 m Pulse Width PW (s) Switching Time Test Circuit 1 Waveform Vout Monitor Vin Monitor 10 90% D.U.T. RL Vin 10Ω Vin 10 V V DD = 75 V Vout 10% 10% 90% td(on) Rev.1.00, Mar.10.2004, page 5 of 6 tr 10% 90% td(off) tf H5N1503P Package Dimensions 15.6 ± 0.3 Unit: mm 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 As of January, 2003 4.8 ± 0.2 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Package Code JEDEC JEITA Mass (reference value) TO-3P — Conforms 5.0 g Ordering Information Part Name Quantity Shipping Container H5N1503P-E 30 pcs Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, Mar.10.2004, page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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