DAP222, DAP202U Preferred Device Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The DAP222 device is housed in the SC−75/SOT−416 package which is designed for low power surface mount applications, where board space is at a premium. The DAP202U device is housed in the SC−70/SOT−323 package. http://onsemi.com ANODE 3 Features • • • • Fast trr Low CD Available in 8 mm Tape and Reel Pb−Free Package is Available 1 2 CATHODE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit VR 80 Vdc VRM 80 Vdc IF 100 mAdc IFM 300 mAdc IFSM(1) 2.0 Adc Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current MARKING DIAGRAMS 3 2 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 1 THERMAL CHARACTERISTICS Rating Symbol Max Unit PD 150 mW Power Dissipation Junction Temperature TJ 150 °C Storage Temperature Tstg −55 ~ + 150 °C P9 SC−75 CASE 463 STYLE 3 2 NB SC−70 CASE 419 ORDERING INFORMATION Device DAP222 Package Shipping† SC−75 3000/Tape & Reel DAP202U SC−70 3000/Tape & Reel DAP222T1 SC−75 3000/Tape & Reel SC−75 (Pb−Free) 3000/Tape & Reel DAP222T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 April, 2004 − Rev. 4 1 Publication Order Number: DAP222/D DAP222, DAP202U ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 70 V — 0.1 Adc Forward Voltage VF IF = 100 mA — 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 A 80 — Vdc Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz — 3.5 pF trr(2) ttt(3) IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR IF = 5.0 mA, VR = 6.0 V, RL = 50 , Irr = 0.1 IR — − 4.0 10.0 ns Reverse Recovery Time 1. 2. 3. DAP222 DAP202U t = 1 S trr Test Circuit for DAP222 in Figure 4. trr Test Circuit for DAP202U in Figure 5. TYPICAL ELECTRICAL CHARACTERISTICS 10 IR , REVERSE CURRENT (µA) TA = 85°C 10 TA = −40°C 1.0 0.1 TA = 25°C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 10 0 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Current 1.75 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance http://onsemi.com 2 8 50 DAP222, DAP202U tr tp t IF trr t 10% A RL Irr = 0.1 IR 90% VR IF = 5.0 mA VR = 6 V RL = 100 tp = 2 s tr = 0.35 ns INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT OUTPUT PULSE Figure 4. Reverse Recovery Time Test Circuit for the DAP222 tr tp t IF trr t 10% A RL Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT Figure 5. Reverse Recovery Time Test Circuit for the DAP202U http://onsemi.com 3 IF = 5.0 mA VR = 6 V RL = 100 OUTPUT PULSE DAP222, DAP202U PACKAGE DIMENSIONS SC−75 (SOT−416) CASE 463−01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −A− S 2 3 D 3 PL 0.20 (0.008) DIM A B C D G H J K L S G −B− 1 M B K J 0.20 (0.008) A STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE C L MILLIMETERS MIN MAX 0.70 0.90 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC −−− 0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC H http://onsemi.com 4 INCHES MIN MAX 0.028 0.035 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC −−− 0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC DAP222, DAP202U PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A L 3 DIM A B C D G H J K L N S B S 1 2 D G 0.05 (0.002) J N C K H SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 DAP222, DAP202U ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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