HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFK 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 Test Conditions VDSS TJ = 25°C to 150°C 800 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 800 V VGS Continuous ±20 ±20 V Transient ID25 TC = 25°C, Chip capability IDM TC = 25°C, pulse width limited by TJM TC = 25°C IAR 27N80 25N80 27N80 25N80 27N80 25N80 ID25 RDS(on) 800 V 800 V 800 V 800 V 27 A 25 A 27 A 25 A 0.30 W 0.35 W 0.30 W 0.35 W TO-264 AA (IXFK) Maximum Ratings IXFK IXFN VGSM VDSS ±30 ±30 27 25 108 100 14 13 27 25 108 100 14 13 A A A A A A 30 30 mJ (TAB) G D V S miniBLOC, SOT-227 B (IXFN) E153432 S D G G EAR TC= 25°C dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W PD TC = 25°C 5 5 500 520 V/ns W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 300 - °C - 2500 3000 V~ V~ 0.9/6 - Weight 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 10 30 S S g G = Gate S = Source Test Conditions VDSS VGS = 0 V, ID = 3 mA VDSS temperature coefficient VGH(th) VDS = VGS, ID = 8 mA VGS(th) temperature coefficient Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 V %/K 0.096 2 Features · · · · · · ±200 nA · IDSS VDS = 0.8 • VDSS VGS = 0 V TJ = 25°C TJ = 125°C 500 2 mA mA RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 25N80 27N80 0.35 0.30 W W International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier Applications · VGS = ±20 VDC, VDS = 0 © 2000 IXYS All rights reserved · V %/K IGSS IXYS reserves the right to change limits, test conditions, and dimensions. · 4.5 -0.214 D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source · Symbol S D · · DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Advantages · · · Easy to mount Space savings High power density 95561C (3/98) 1-4 IXFK 25N80 IXFN 25N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test C iss Coss 16 7930 VGS = 0 V, VDS = 25 V, f = 1 MHz C rss 28 8400 9740 pF 712 790 pF 146 192 240 pF 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 80 ns td(off) RG = 1 W (External), 75 ns 40 ns tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC TO-264 AA RthCK TO-264 AA RthJC miniBLOC, SOT-227 B RthCK miniBLOC, SOT-227 B Source-Drain Diode 320 350 400 nC 38 46 56 nC 120 130 142 nC 0.25 K/W 0.15 K/W 0.24 0.05 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 27N80 25N80 27 25 A A ISM Repetitive; pulse width limited by TJM 27N80 25N80 108 100 A A VSD IF = 100 A, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V trr IF = IS, -di/dt = 100 A/ms, VR = 100 V T J =25°C TJ =125°C T J =25°C 250 400 ns ns mC A QRM IRM © 2000 IXYS All rights reserved 2 17 TO-264 AA Outline S 630 td(on) IXFK 27N80 IXFN 27N80 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFK 25N80 IXFN 25N80 40 40 TJ = 25 C TJ = 125OC VGS = 9V 8V 7V 6V 30 VGS = 9V 8V 7V 6V 30 5V 20 ID - Amperes O ID - Amperes IXFK 27N80 IXFN 27N80 5V 20 10 10 4V 4V 0 0 0 2 4 6 8 10 0 4 8 2.6 2.6 2.2 2.4 TJ = 125OC RDS(ON) - Normalized VGS = 10V 2.4 RDS(ON) - Normalized 20 Figure 2. Output Characteristics at 125OC Figure 1. Output Characteristics at 25OC 2.0 1.8 1.6 1.4 TJ = 25OC 1.2 VGS = 10V 2.2 2.0 ID = 27A 1.8 1.6 ID = 13.5A 1.4 1.2 1.0 0 10 20 30 40 1.0 25 50 50 ID - Amperes 100 125 150 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ 30 30 25 25 IXFN27N80 IXF_25N80 ID - Amperes 20 IXFK27N80 15 10 5 0 -50 75 TJ - Degrees C Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID ID - Amperes 16 VDS - Volts VDS - Volts 0.8 12 20 15 TJ = 125oC 10 TJ = 25oC 5 -25 0 25 50 75 100 125 150 TC - Degrees C Figure 5. Drain Current vs. Case Temperature © 2000 IXYS All rights reserved 0 2 3 4 5 6 7 VGS - Volts Figure 6. Admittance Curves 3-4 IXFK 25N80 IXFN 25N80 12 10000 Ciss 8 Capacitance - pF V = 400V Vds=300V DS ID=30A = 27A = 1mA IG=10mA 10 VGS - Volts IXFK 27N80 IXFN 27N80 6 4 f = 1MHz Coss 1000 Crss 2 0 0 100 200 300 400 500 100 0 Gate Charge - nC 5 10 15 20 25 30 35 40 VDS - Volts Figure 7. Gate Charge Figure 8. Capacitance Curves 100 ID - Amperes 80 60 TJ = 125OC 40 TJ = 25OC 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 1 R(th)JC - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 D = Duty Cycle 0.01 D=0.02 D=0.01 Single pulse 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Figure 10. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4