DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04EHE, NP80N04KHE NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N04EHE-E1-AY Note1, 2 NP80N04EHE-E2-AY Note1, 2 NP80N04KHE-E1-AY Note1 NP80N04KHE-E2-AY Note1 NP80N04CHE-S12-AZ Note1, 2 NP80N04DHE-S12-AY Note1, 2 NP80N04MHE-S18-AY Note1 NP80N04NHE-S18-AY Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g Sn-Ag-Cu Pure Sn (Tin) TO-220 (MP-25) typ. 1.9 g Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g (TO-220) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance (TO-262) Ciss = 2200 pF TYP. • Built-in gate protection diode (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14239EJ7V0DS00 (7th edition) Date Published October 2007 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 1999, 2007 NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note1 Note2 Total Power Dissipation (TA = 25°C) ID(DC) ±80 A ID(pulse) ±280 A 1.8 W PT Total Power Dissipation (TC = 25°C) PT 120 W Channel Temperature Tch 175 °C Tstg −55 to +175 °C Storage Temperature Single Avalanche Current Note3 IAS 52/31/13 A Single Avalanche Energy Note3 EAS 2.7/96/169 mJ Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 μs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 1.25 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W 2 Data Sheet D14239EJ7V0DS NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 10 μA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 μA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 3.0 4.0 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 40 A 15 31 Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 40 A Input Capacitance Ciss Output Capacitance S 6.2 8.0 mΩ VDS = 25 V, 2200 3300 pF Coss VGS = 0 V, 490 730 pF Reverse Transfer Capacitance Crss f = 1 MHz 230 410 pF Turn-on Delay Time td(on) VDD = 20 V, ID = 40 A, 24 52 ns Rise Time tr VGS = 10 V, 14 36 ns Turn-off Delay Time td(off) RG = 1 Ω 44 88 ns Fall Time tf 15 37 ns Total Gate Charge QG VDD = 32 V, 40 60 nC Gate to Source Charge QGS VGS = 10 V, 12 nC Gate to Drain Charge QGD ID = 80 A 16 nC Body Diode Forward Voltage VF(S-D) IF = 80 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 80 A, VGS = 0 V, 40 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 50 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS 90% VDS VGS 0 VDS 10% 0 10% Wave Form VDS ID τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD Data Sheet D14239EJ7V0DS 3 NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE TYPICAL CHARACTERISTICS (TA = 25°C) Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 0 25 0 50 75 100 80 60 40 20 0 100 125 150 175 200 25 0 50 75 100 125 150 175 200 TC - Case Temperature - °C TC - Case Temperature - °C Figure3. FORWARD BIAS SAFE OPERATING AREA Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR ID(pulse) d ite im V) ) L 10 n o S( = 100 =1 0μ s 10 ID(DC) 0μ 1m Po DC Lim wer ite Dis sip d ati RDVGS ( PW Single Pulse Avalanche Energy - mJ 1000 ID - Drain Current - A 120 s s on 10 1 TC = 25°C Single pulse 0.1 0.1 1 10 180 169 mJ 160 140 120 100 96 mJ 60 40 20 2.7 mJ 0 25 100 IAS = 13 A 31 A 52 A 80 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - °C VDS - Drain to Source Voltage - V Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 100 Rth(ch-A) = 83.3°C/W 10 Rth(ch-C) = 1.25°C/W 1 0.1 Single pulse 0.01 10 μ 100 μ 1m 10 m 100 m 1 PW - Pulse Width - s 4 Data Sheet D14239EJ7V0DS 10 100 1000 NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Figure6. FORWARD TRANSFER CHARACTERISTICS 1000 300 Pulsed ID - Drain Current - A ID - Drain Current - A 250 100 TA = −40°C 25°C 75°C 150°C 175°C 10 1 VGS = 10 V 200 150 100 50 0.1 1 2 3 VDS = 10 V 5 6 4 Pulsed 0 10 TA = 175°C 75°C 25°C −40°C 0.1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 Pulsed 10 VGS = 10 V 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 10 V Pulsed 0.01 0.01 4 3 VDS - Drain to Source Voltage - V VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S VGS - Gate to Source Voltage - V 1 2 1 0 Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40 30 20 10 0 ID = 40 A 0 2 4 6 8 10 12 14 16 18 VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VDS = VGS ID = 250 μA 4.0 3.0 2.0 1.0 0 −50 0 50 100 150 Tch - Channel Temperature - °C ID - Drain Current - A Data Sheet D14239EJ7V0DS 5 1000 Pulsed Pulsed IF - Diode Forward Current - A 16 12 VGS = 10 V 8 4 −50 50 0 100 10 1 0.1 0 150 Figure15. SWITCHING CHARACTERISTICS 1000 Coss Crss 100 10 100 tf 100 td(off) td(on) tr 10 VDD = 20 V VGS = 10 V RG = 1 Ω 1 0.1 100 10 1 VDS - Drain to Source Voltage - V ID - Drain Current - A Figure16. REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 100 A/μs VGS = 0 V 100 10 16 80 14 12 60 VGS VDD = 32 V 20 V 8V 40 10 8 6 4 20 VDS 2 ID = 80 A 1.0 10 100 0 0 IF - Diode Forward Curren - A 10 20 30 QG - Gate Charge - nC Data Sheet D14239EJ7V0DS 40 VGS - Gate to Source Voltage - V 1000 1 0.1 1.5 1.0 1000 Ciss 1 0.5 VF(S-D) - Source to Drain Voltage - V td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 0V Tch - Channel Temperature - °C 10 0.1 6 VGS = 10 V 100 ID = 40 A 0 Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 VGS = 0 V f = 1 MHz trr - Reverse Recovery Time - ns Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE VDS - Drain to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE PACKAGE DRAWINGS (Unit: mm) Note 1.3 ± 0.2 10.0 ± 0.3 No plating 7.88 MIN. 4 2 3 1.4 ± 0.2 0.7 ± 0.2 2.54 TYP. 9.15 ± 0.3 8.0 TYP. 8.5 ± 0.2 1 5.7 ± 0.4 1.0 ± 0.5 4 4.45 ± 0.2 0.025 to 0.25 P. .5R 0 TY R 0.8 2.54 TYP. P. TY 0.5 ± 0.2 0.75 ± 0.2 0.5 ± 2.8 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 1.Gate 2.Drain 2.5 15.5 MAX. 4 1 0.75 ± 0.1 2.54 TYP. 1.3 ± 0.2 12.7 MIN. 6.0 MAX. 1 2 3 0.5 ± 0.2 2.8 ± 0.2 0.75 ± 0.3 2.54 TYP. 2 3 1.0 ± 0.5 10 TYP. Note 4.8 MAX. 1.3 ± 0.2 8.5 ± 0.2 1.3 ± 0.2 4.Fin (Drain) 12.7 MIN. 4.8 MAX. 10.0 TYP. 1.3 ± 0.2 3 3.Source φ 3.6 ± 0.2 5.9 MIN. 3.0 ± 0.3 1 <R> 4)TO-262 (MP-25 Fin Cut) 4 8ο 0.25 Note 10.6 MAX. 0.2 0 to 2.54 3)TO-220 (MP-25) 1.3 ± 0.2 2.54 ± 0.25 4.8 MAX. 10 TYP. 1.35 ± 0.3 2)TO-263 (MP-25ZK) 15.25 ± 0.5 1)TO-263 (MP-25ZJ) 0.5 ± 0.2 2.8 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note Not for new design Data Sheet D14239EJ7V0DS 7 NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE 0.8 ± 0.1 0.5 ± 0.2 2.5 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.3 ± 0.2 1.27 ± 0.2 3.1 ± 0.3 1 2 3 4.45 ± 0.2 10.1 ± 0.3 4 8.9 ± 0.2 15.9 MAX. 1.27 ± 0.2 2.54 TYP. 10.0 ± 0.2 13.7 ± 0.3 3 13.7 ± 0.3 1 2 4.45 ± 0.2 1.3 ± 0.2 3.1 ± 0.2 4 φ 3.8 ± 0.2 6.3 ± 0.3 2.8 ± 0.3 10.0 ± 0.2 1.2 ± 0.3 6)TO-262 (MP-25SK) 5)TO-220 (MP-25K) 0.8 ± 0.1 0.5 ± 0.2 2.54 TYP. 2.54 TYP. 2.5 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Gate Protection Diode Remark Body Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 8 Data Sheet D14239EJ7V0DS NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side Reel side MARKING INFORMATION NEC 80N04 HE Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Soldering Conditions Infrared reflow Maximum temperature (Package's surface temperature): 260°C or below MP-25ZJ, MP-25ZK Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Recommended Condition Symbol IR60-00-3 Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Wave soldering Maximum temperature (Solder temperature): 260°C or below MP-25, MP-25K, MP-25SK, Time: 10 seconds or less MP-25 Fin Cut Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 350°C or below MP-25ZJ, MP-25ZK, Time (per side of the device): 3 seconds or less MP-25K, MP-25SK Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 300°C or below MP-25, MP-25 Fin Cut Time (per side of the device): 3 seconds or less THDWS P350 P300 Maximum chlorine content of rosin flux: 0.2% (wt.) or less Caution Do not use different soldering methods together (except for partial heating). Data Sheet D14239EJ7V0DS 9 NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE • The information in this document is current as of October, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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