Jiangsu BC238 To-92 plastic-encapsulate transistor Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC237 / BC238 / BD239
TRANSISTOR (NPN)
FEATURES
Amplifier dissipation NPN Silicon
TO-92
1. COLLECTOR
2. BASE
BC237
z
BC238
XXX
1
z
BC239
XXX
z
1
3. EMITTER
XXX
1
Equivalent Circuit
BC237,BC238,BC239 'HYLFHFRGH
Solid
dot=Green molding compound device,
if none,the normal device
;;; &RGH
ORDERING INFORMATION
Part Number
Package
Packing Method
Pack Quantity
BC237
TO-92
Bulk
1000pcs/Bag
BC237-TA
TO-92
Tape
2000pcs/Box
BC238
TO-92
Bulk
1000pcs/Bag
BC238-TA
TO-92
Tape
2000pcs/Box
BC239
TO-92
Bulk
1000pcs/Bag
BC239-TA
TO-92
Tape
2000pcs/Box
MAXIMUM RATINGS (Ta =25 ℃ unless otherwise noted)
Symbol
VCEO
VEBO
Parameter
Value
Collector-Emitter Voltage
Emitter-Base Voltage
BC237
45
BC238/239
25
BC237
6
BC238/239
5
Unit
V
V
IC
Collector Current -Continuous
0.1
A
PC
Collector Power Dissipation
350
mW
RθJA
Thermal Resistance, Junction to Ambient
357
℃/W
RθJC
Thermal Resistance, Junction to Case
125
℃/W
Tj
Junction Temperature
150
℃
T stg
Storage Temperature
-55~150
℃
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1
D,Aug,2017
Ta =25 Я unless otherwise specified
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Test
conditions
IC=100μA, IE=0
IC=2mA, IB=0
IE=100μA, IC=0
BC238/239
30
BC237
45
BC238/239
25
BC237
6
BC238/239
5
VCB=30V,IE=0
BC238/239
Typ
V
V
BC237C/238C/239C
270
120
800
BC239
120
800
BC237A
120
220
BC237B/238B
200
460
BC237C/238C/239C
380
800
VCE=5V, IC=100mA
BC237A
120
BC237B/238B
180
BC237C/238C/239C
300
hFE(3)
IC=10mA, IB=0.5mA BC237/238/239
0.2
IC=100mA, IB=5mA
0.6
BC237/239
BC238
Base-emitter saturation voltage
VBE(sat)
Transition frequency
VBE
fT
IC=10mA,IB=0.5mA
0.83
IC=100mA,IB=5mA
1.05
0.7
0.55
VCE=5V, IC=100mA
0.83
VCE=3V,IC=0.5mA,f=100MHz BC237
100
BC238
120
BC239
140
150
200
BC238
150
240
BC239
150
280
VCE=5V,IC=10mA,f=100MHz BC237
Cob
VCB=10V, IE=0, f=1MHz
Emitter-base capacitance
Cib
VEB=0.5V, IC=0, f=1MHz
V
0.5
VCE=5V, IC=2mA
Collector output capacitance
V
0.8
VCE=5V, IC=0.1mA
Base-emitter voltage
nA
90
150
hFE(2)
Unit
V
BC237B/238B
BC237
Max
15
BC237A
VCE=5V, IC=2mA
VCE(sat)
50
BC237
hFE(1)
Collector-emitter saturation voltage
BC237
VCE=50V, VBE=0
VCE=5V, IC=10μA
DC current gain
Min
V
MHz
4.5
8
pF
Pf
VCE=5V, Ic=0.2mA,
2
4
f=1kHZ, Rs=2KΩ, Δf=200Hz BC237
2
10
BC238
2
10
BC239
2
4
f=1kHZ, Rs=2KΩ
Noise figure
NF
BC239
VCE=5V, Ic=0.2mA,
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dB
DAug
TO-92 Package Outline Dimensions
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Φ
h
Dimensions In Millimeters
Min
Max
3.300
3.700
1.100
1.400
0.380
0.550
0.360
0.510
4.300
4.700
3.430
4.300
4.700
1.270 TYP
2.440
2.640
14.100
14.500
1.600
0.000
0.380
Dimensions In Inches
Min
Max
0.130
0.146
0.043
0.055
0.015
0.022
0.014
0.020
0.169
0.185
0.135
0.169
0.185
0.050 TYP
0.096
0.104
0.555
0.571
0.063
0.000
0.015
TO-92 Suggested Pad Layout
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3
D,Aug,2017
TO-92 7DSHDQG5HHO
ZZZFMHOHFFRP4 D,Aug,2017
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