Compact Headphone Amplifiers Headphone Amplifier Designed for 0.93V Low Voltage Operation BU7150NUV No.11102ECT01 ●Description BU7150NUV is Audio Amplifier designed for Single-cell battery operated audio products (VDD = 0.93 ~ 3.5V, at Ta=0~85°C). BU7150NUV can be selected in single-ended mode for stereo headphone and BTL mode for mono speaker operations. For BU7150NUV at VDD = 1.5V, THD+N = 1%, the output power is 14mW at RL = 16Ω in single-ended mode and the output power is 85mW at RL = 8Ω in BTL mode. ●Features 1) Wide battery operation Voltage (0.93V~3.5V, Ta=0~85°C) (1.03V~3.5V, Ta= -40~85°C) 2) BU7150NUV can be selected in single-ended mode for stereo headphone and BTL mode for mono speaker operation 3) Unity-gain stability 4) Click and pop-noise reduction circuit built-in 5) Shutdown mode(Low power mode) 6) High speed turn-on mute mode 7) Thermal shutdown protection circuit 8) Power-on reset circuit not sensed during start-up slew rate of supply voltage 9) Small package (VSON010V3030) ●Applications Noise-canceling headphone, IC recorder, Mobile phone, PDA, Electronic toys etc.. ●Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Ratings Unit Supply Voltage VDD 4.5 V Input Voltage VIN VSS-0.3~VDD+0.3 V Input Current IIN -10~10 mA Power Dissipation PD 560 * mW TSTG -55~+150 °C Storage Temperature Range *For operating over 25°C, de-rate the value at 5.6mW/°C. This value is for IC mounted on 74.2 mm x 74.2mm x 1.6mm glass-epoxy PCB of single-layer. ●Operating conditions Parameter Operation Temperature Range Supply Voltage (Note 1,2) Symbol Ratings Unit Min. Typ. Max. TOPR -40 - 85 °C VDD 0.93 - 3.5 V Note 1: If the supply voltage is 0.93V, BU7150NUV does not operate at less than 0°C. If the supply voltage is more than 1.03V, BU7150NUV operates until -40°C. (But, it is not the one which guarantees the standard value for electric characteristics.) Note 2: Ripple in power supply line should not exceed 400mVP-P.(VDD=1.5 V, Ta=25°C ) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/16 2011.05 - Rev.C Technical Note BU7150NUV ●Electrical characteristics Ta=25°C, VDD=1.5V, f=1kHz, VSS=GND unless otherwise specified. Limits Parameter Symbol Min. Typ. Max. Unit Conditions No Signal Operating Current IDD - 1 1.4 mA No load, No signal Shutdown Current ISD - 3 9 μA SDB Pin=VSS Mute Current IMUTE - 15 - μA MUTEB Pin=VSS, SE Output Offset Voltage VOFS - 5 50 mV | VOUT1 – VOUT2 |, No signal 70 85 - mW RL=8Ω, BTL, THD+N=1% - 14 - mW RL=16Ω, SE, THD+N=1% - 0.2 0.5 % 20kHz LPF, RL=8Ω, BTL, PO=25mW - 0.1 0.5 % 20kHz LPF, RL=16Ω, SE,PO=5ｍW VNO - 10 - μVrms CT - 85 - dB - 62 - dB - 66 - dB Maximum Output Power PO Total Harmonic Distortion +Noise Output Voltage Noise Crosstalk Power Supply Rejection Ratio THD+N PSRR 20kHz LPF + A-weight RL=16Ω, SE, 1kHz BPF Ripple voltage=200mVP-P, RL=8Ω, BTL, CBYPASS=4.7μF Ripple voltage=200mVP-P, RL=16Ω, SE, CBYPASS=4.7μF Input Logic High Level VIH 0.7 - - V MUTEB Pin, SDB Pin Input Logic Low Level VIL - - 0.3 V MUTEB Pin, SDB Pin “BTL” is BTL-mode when MODE Pin = VDD, “SE” is single-ended mode when MODE Pin = VSS. Turn-on time in BTL mode is about 11 times faster than single-ended mode. Also, BTL mode does not have MUTE mode. When MUTEB Pin = VSS, then it will be shutdown mode. ●Block diagram IN1 1 10 SDB 2 VDD 9 OUT1 Control Logic MUTEB 3 BYPASS 4 8 MODE Bias Generator IN2 5 7 OUT2 6 VSS TOP VIEW Fig. 1 Block diagram www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/16 2011.05 - Rev.C Technical Note BU7150NUV ●Electrical characteristics waveform (Reference data) Ta=25°C, f=1kHz, VSS=GND unless otherwise specified. Using circuits are Fig.34 and Fig.35. Also, RL=16Ω for single ended mode, RL=8Ω for BTL mode） 0 0 VDD=1.5V, BTL m ode -10 -10 -20 -20 THD+N [dB] THD+N [dB] VDD=1.5V, SE m ode -30 -40 -50 -30 -40 -50 -60 -60 -70 -70 10n 100n 1u 10u 100u 1m 10m 100m Output Power [W] Fig. 2 THD+N vs . Output Power 10n -10 -20 -20 -30 -40 -50 -30 -40 -50 -60 -60 10n 100n 1u 10u 100u 1m 10m 100m 10n Output Power [W] Fig. 4 THD+N vs . Output Power 0 100n 1u 10u 100u 1m 10m 100m Output Power [W] Fig. 5 THD+N vs . Output Power 0 VDD=1.5V, Po=5m W, SE m ode, BW<80kHz VDD=1.5V, Po=25m W, BTL m ode, BW<80kHz -10 -20 -20 -30 -30 THD+N [dB] THD+N [dB] 10u 100u 1m 10m 100m Output Power [W] Fig. 3 THD+N vs . Output Power VDD=1.2V, BTL m ode -10 THD+N [dB] THD+N [dB] VDD=1.2V, SE m ode -40 -50 -40 -50 -60 -60 -70 -70 -80 -80 10 100 1k 10k Frequency [Hz] Fig. 6 THD+N vs . Frequency 100k 10 100 1k 10k Frequency [Hz] Fig. 7 THD+N vs . Frequency 100k 0 0 VDD=1.2V, Po=2.5m W, SE m ode, BW<80kHz -10 VDD=1.2V, Po=10m W, BTL m ode, BW<80kHz -10 -20 -20 -30 -30 THD+N [dB] THD+N [dB] 1u 0 0 -10 100n -40 -50 -40 -50 -60 -60 -70 -70 -80 -80 10 100 1k 10k Frequency [Hz] Fig. 8 THD+N vs . Frequency www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100k 10 3/16 100 1k 10k Frequency [Hz] Fig. 9 THD+N vs . Frequency 100k 2011.05 - Rev.C Technical Note BU7150NUV 0 0 VDD=1.5V, SE m ode -10 -10 VDD=1.5V, BTL m ode -20 Output Level [dBV] Output Level [dBV] -20 -30 -40 -50 -60 -70 -80 -30 -40 -50 -60 -70 -80 -90 -90 -100 -100 -100 -80 -60 -40 -20 0 -100 Input Level [dBV] Fig. 10 Output Level vs . Input Level -20 0 VDD=1.2V, BTL m ode -20 Output Level [dBV] -20 Output Level [dBV] -40 0 VDD=1.2V, SE m ode -40 -60 -80 -100 -40 -60 -80 -100 -120 -120 -120 -100 -80 -60 -40 -20 0 -120 Input Level [dBV] Fig. 12 Output Level vs . Input Level -100 -80 -60 -40 -20 0 Input Level [dBV] Fig. 13 Output Level vs . Input Level 10 10 0 0 -10 -10 Gain [dB] Gain [dB] -60 Input Level [dBV] Fig. 11 Output Level vs . Input Level 0 -20 -30 -40 -20 -30 -40 VDD=1.5V, Po=5m W, SE m ode VDD=1.5V, Po=25m W, BTL m ode -50 -50 10 100 1k 10k 100k Frequency [Hz] Fig. 14 Gain vs . Frequency 1M 10 10 10 0 0 -10 -10 Gain [dB] Gain [dB] -80 -20 -30 -40 100 1k 10k 100k Frequency [Hz] Fig. 15 Gain vs . Frequency 1M -20 -30 -40 VDD=1.2V, Po=2.5m W, SE m ode VDD=1.2V, Po=10m W, BTL m ode -50 -50 10 100 1k 10k 100k Frequency [Hz] Fig. 16 Gain vs . Frequency www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1M 10 4/16 100 1k 10k 100k Frequency [Hz] Fig. 17 Gain vs . Frequency 1M 2011.05 - Rev.C Technical Note BU7150NUV 1000 SE m ode 900 120 800 100 700 Power [mW] Power [mW] 140 80 60 THD+N = 10% 40 THD+N = 1% 600 500 400 0 0 2 3 4 Supply Voltage [V] Fig. 18 Maxim um output Power vs . Supply Voltage 1 0 2 3 4 Supply Voltage [V] Fig. 19 Maxim um output Power vs . Supply Voltage 40 200 SE m ode Zoom up 35 1 BTL m ode Zoom up 180 160 30 140 25 Power [mW] Power [mW] THD+N = 1% 100 0 20 15 THD+N = 10% 10 120 100 80 THD+N = 10% 60 40 THD+N = 1% 5 × :WC(PO=70m W THD+N=1%) THD+N = 1% 20 0 0 0.0 0.0 1.0 1.5 2.0 Supply Voltage [V] Fig. 21 Maxim um output Power vs . Supply Voltage 1.0 1.5 2.0 Supply Voltage [V] Fig. 20 Maxim um output Power vs . Supply Voltage 0.5 -20 VDD=1.5V, Input=200m VP-P, SE m ode, Input Term inated into 10Ω -10 -30 PSRR [dB] -40 -50 -60 -40 -50 -60 -70 -70 -80 -80 -90 -90 10 100 1k 10k Frequency [Hz] Fig. 22 PSRR vs . Frequency 10 100k 0 -20 VDD=1.5V, Input=200m VP-P, BTL m ode, Input Term inated into 10Ω -20 -30 -10 0.5 0 0 -10 PSRR [dB] THD+N = 10% 300 200 20 100 1k 10k Frequency [Hz] Fig. 23 PSRR vs . Frequency 100k 0 VDD=1.2V, Input=200m VP-P, SE m ode, Input Term inated into 10Ω VDD=1.2V, Input=200m VP-P, BTL m ode, Input Term inated into 10Ω -10 -20 -30 -30 PSRR [dB] PSRR [dB] BTL m ode -40 -50 -60 -40 -50 -60 -70 -70 -80 -80 -90 -90 10 100 1k 10k Frequency [Hz] Fig. 24 PSRR vs . Frequency www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100k 10 5/16 100 1k 10k Frequency [Hz] Fig. 25 PSRR vs . Frequency 100k 2011.05 - Rev.C Technical Note BU7150NUV -40 -40 VDD=1.5V, Input=400m VP-P, SE m ode, Input Term inated into 10Ω -50 -60 Crosstalk [dB] Crosstalk [dB] -60 -70 -80 -90 -80 -90 -100 -110 -110 -120 10 0 100 1k 10k Frequency [Hz] Fig. 26 Cros s talk vs . Frequency 10 100k 0 VDD=1.5V, SE m ode, 20kHz LPF + A-weight -20 -40 -60 -80 -100 -120 100 1k 10k Frequency [Hz] Fig. 27 Cros s talk vs . Frequency 100k VDD=1.5V, BTL m ode, 20kHz LPF + A-weight -20 Noise Level [dBV] Noise Level [dBV] -70 -100 -120 -40 -60 -80 -100 -120 -140 -140 -160 -160 10 100 1k 10k Frequency [Hz] Fig. 28 Nois e Level vs . Frequency 10 100k 100 1k 10k Frequency [Hz] Fig. 29 Nois e Level vs . Frequency 100k 4.5 1.2 SE m ode, Input=no s ignal SE m ode, Input=no s ignal 4 1 3.5 3 ISD [μA] 0.8 IDD [mA] VDD=1.2V, Input=400m VP-P, SE m ode, Input Term inated into 10Ω -50 0.6 0.4 2.5 2 1.5 1 0.2 0.5 0 0 0 1 2 3 Supply Voltage [V] Fig. 30 IDD vs . Supply Voltage 0 4 1 2 3 Supply Voltage [V] Fig. 31 ISD vs . Supply Voltage 4 -50 VDD=1.5V, Input=400m VP-P, SE m ode -55 MUTE Level [dB] -60 -65 -70 -75 -80 -85 -90 10 100 1k 10k Frequem cy [Hz] Fig. 32 MUTE Level vs . Frequency www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100k 6/16 2011.05 - Rev.C Technical Note BU7150NUV ●Application Circuit + + + + + ・Resistors RF1, RF2 should be used in 20kΩ～1MΩ range. ・For gain setting greater than 4 times, then RC1, RC2, CC1, CC2 can be eliminated. Fig. 34 Single-ended mode application circuit + + ・Resistors RF1, RF2 should be used in 20kΩ～1MΩ range Fig. 35 BTL mode application circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/16 2011.05 - Rev.C Technical Note BU7150NUV ●Pin Configuration No. Pin Name 1 IN1 Input Pin 1 A 2 SDB Shutdown Pin (OFF at L) C 3 MUTEB Mute Pin (Mute at L) C 4 BYPASS Bypass Pin D 5 IN2 Input Pin 2 A 6 VSS GND Pin - 7 OUT2 Output Pin 2 B 8 MODE Mode Select Pin (SE at VSS, BTL at VDD) A 9 OUT1 Output Pin 1 B 10 VDD Power Supply Pin - Function I/O equal circuit ●I/O equal circuit (Fig. 36) VDD VDD VDD IN1 IN2 MODE VDD OUT1 OUT2 50Ω A B VDD SDB MUTEB 2kΩ C VDD VDD VDD BYPASS 600kΩ 100kΩ 100kΩ D Fig.36 I/O equal circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8/16 2011.05 - Rev.C Technical Note BU7150NUV ●Functional descriptions [Timing Chart] BU7150NUV can control many mode states. “Active” is normal operation state for output signal. “Shutdown” is IC power down state for low power. “Mute” is Headphone amplifier power down state for low power and fast turn-on, because keeping BIAS voltage = VDD/2. “Turn on” and “Turn off” are sweep state. Fig. 37 Timing Chart (MODE = VSS: Single-ended mode) Fig. 38 Timing Chart (MODE = VDD: BTL- mode) Also, BU7150NUV has wait time for reduction of pop-sound at turn-on and turn-off. Turn-on wait time is 70msec from IN1 voltage = VDD/2. Turn-off wait time is 140msec from BYPASS voltage = 100mV. Please don't change SDB, MUTEB condition at 70msec and 140msec wait- time. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/16 2011.05 - Rev.C Technical Note BU7150NUV [About Time until Signal Output] BU7150NUV need wait-time for BIAS charge sweep time and pop-noise reduction. In the Fig. 37, Ts1 is BIAS charge sweep time from power on or SDB=H. Ts2 is time until signal output from power on or SDB=H. Also, in the Fig. 38, Tb1 is BIAS charge sweep time from power on. Tb2 is time until signal output from power on. Tb3 is BIAS charge sweep time from SDB=H. Tb4 is time until signal output from SDB=H. These values are decided equation (1) ~ (6). However, BIAS charge sweep time (Ts1, Tb1, Tb3) have uneven ±50%, and wait-time (70msec) is 40msec ~ 126msec for process parameter distribution. (Ta=25°C) Ts1 VDD CBYPASS [sec] 2.5 10 6 Ts2 Ts1 0.07[sec] Tb1 ・・・(2) VDD 2 CBYPASS [sec] 27.5 10 6 Tb2 Tb1 0.07[sec] Tb3 ・・・(1) ・・・( 4) VDD CBYPASS [sec] 27.5 10 6 Tb4 Tb3 0.07[sec] ・・・(3) ・・・(5) ・・・(6) In the Fig. 38, Tb1 and Tb3 is differ value, because BU7150NUV’s default is single-ended mode. BU7150NUV need BYPASS>100mV to recognize for BTL mode. Also, Td is delay time to CI1=VDD/2 from BYPASS=VDD/2. Td is decided by CI1, RI1, and RF1. Fig. 39 Flow of Time until Signal Output www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/16 2011.05 - Rev.C Technical Note BU7150NUV [Operation mode] ・Selecting operation mode BU7150NUV has two OPAMP in the IC (Fig. 1). BU7150NUV is selected for BTL-mode for mono speaker and single-ended mode for stereo headphone operation. Mode is composed of external parts and internal control (Fig. 34, 35) BU7150NUV operates at single-ended mode when MODE pin (pin8) = 0V turn on. BTL mode is operated when MODE pin (pin8) = VDD turn on. BYPASS voltage = 100mV then operation mode is decided by internal comparator by detecting MODE voltage. The difference between Single-ended mode and BTL-mode is mentioned in the following table. Single ended mode MODE='VSS' BTL mode MODE='VDD' enable disenable Bypass voltage turn on time [Ts1, Tb1, Tb3] (CBYPASS=4.7μF) Ts1=2.82sec Tb1=598msec Tb3=256msec Time until Signal Output [Ts2, Tb2, Tb4](CBYPASS=4.7μF) Ts2=2.89sec Tb1=668msec Tb3=326msec Maximum Output Power (THD=1%) 14mW 85mW Total Harmonic Distortion + Noise 0.10% 0.20% Power Supply Rejection Ratio 66dB 62dB Parameter Mute function (Ta=25℃, VDD=1.5V, f=1kHz) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 11/16 2011.05 - Rev.C Technical Note BU7150NUV ・Single-Ended mode Single-ended mode can be use for stereo headphone amplifier using two internal amplifiers. BU7150NUV can select amplifier gain Av using external parts. (Fig. 34) Two amplifiers gain Av is decided by input resistance RI1, RI2 and feedback resistance RF1, RF2 aspect. Also, Please, use RF1, RF2 value in the range 20kΩ~1MΩ. AV RF RI Amplifier outputs (OUT1, OUT2) need coupling capacitors in single-ended mode operation. Coupling capacitors reduce DC-voltage at the output and to pass the audio signal. Single-ended mode has mute mode. Mute mode reduces pop noise and low power (typ. 15μA when MUTEB pin = Low. Rise time is high-speed though current consumption increases more than the state of the shutdown so that the state of the mute may keep the output level at the bias level. Mute level is decided by input resistance RI1, RI2 and feedback resistance RF1, RF2 and RL Mute level [dB] 20Log RL RI RF BU7150NUV needs phase-compensation circuit using external parts. (Fig. 34) But, for amplifier gain Av > 4 then phase compensation circuit may be eliminated. ・BTL mode BTL mode can be used for mono speaker amplifier using two internal amplifiers. BU7150NUV can select amplifier gain Av using external parts. (Fig. 35) 1st stage gain is decided by selecting external parts. But 2nd stage gain = 1. 1st stage output signal and 2nd stage output signal are of same amplitude but phase difference of 180°. Amplifiers gain Av is decided by input resistance RI1 and feedback resistance RF1 aspect. Also, Please, use RF1, RF2 value in range of 20kΩ~1MΩ. AV 2 R F1 RI1 BU7150NUV has no output pop noise at BTL mode operation, because output coupling capacitor is not charged. Therefore, BTL mode is faster by 11 times compared to single-ended mode. SDB pin and MUTEB pin are same function in BTL mode operation. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 12/16 2011.05 - Rev.C Technical Note BU7150NUV [About Maximum Output Power] Maximum output power of audio amplifier is reduced line impedance. Please, design to provide low impedance for the wiring between the power source and VDD pin of BU7150NUV. Also, please design to provide low impedance for the wiring between the GND and VSS pin of BU7150NUV. VDD Power source Impedance Speaker Impedance GND Impedance Fig. 40 Line Impedance www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 13/16 2011.05 - Rev.C Technical Note BU7150NUV [How to select external parts for application] ・Power supply capacitor Power supply capacitor is important for low noise and rejection of alternating current. Please use 10μF electrolytic or tantalum capacitor for low frequency and 0.1μF ceramic capacitor for high frequency nearer to BU7150NUV. ・BYPASS pin capacitor BU7150NUV sweeps “Active” state after 70msec wait time after IN1 voltage = VDD/2. IN1 voltage are subordinated BYPASS voltage Ts. BYPASS voltage is subordinated BYPASS pin capacitor CBYPASS. Therefore, High speed turn on time is possible if CBYPASS is small value. But, pop noise may occur during turn on time. Therefore, CBYPASS need to be selected best value for application. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 14/16 2011.05 - Rev.C Technical Note BU7150NUV ●Notes for use (1) Absolute Maximum Ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down devices, thus making impossible to identify breaking mode such as a short circuit or an open circuit. If any special mode exceeding the absolute maximum ratings is assumed, consideration should be given to take physical safety measures including the use of fuses, etc. (2) Operating conditions These conditions represent a range within which characteristics can be provided approximately as expected. The electrical characteristics are guaranteed under the conditions of each parameter. (3) Reverse connection of power supply connector The reverse connection of power supply connector can break down ICs. Take protective measures against the breakdown due to the reverse connection, such as mounting an external diode between the power supply and the IC’s power supply terminal. (4) Power supply line Design PCB pattern to provide low impedance for the wiring between the power supply and the GND lines. In this regard, for the digital block power supply and the analog block power supply, even though these power supplies has the same level of potential, separate the power supply pattern for the digital block from that for the analog block, thus suppressing the diffraction of digital noises to the analog block power supply resulting from impedance common to the wiring patterns. For the GND line, give consideration to design the patterns in a similar manner. Furthermore, for all power supply terminals to ICs, mount a capacitor between the power supply and the GND terminal. At the same time, in order to use an electrolytic capacitor, thoroughly check to be sure the characteristics of the capacitor to be used present no problem including the occurrence of capacity dropout at a low temperature, thus determining the constant. (5) GND voltage Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating state. Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an actual electric transient. (6) Short circuit between terminals and erroneous mounting In order to mount ICs on a set PCB, pay thorough attention to the direction and offset of the ICs. Erroneous mounting can break down the ICs. Furthermore, if a short circuit occurs due to foreign matters entering between terminals or between the terminal and the power supply or the GND terminal, the ICs can break down. (7) Operation in strong electromagnetic field Be noted that using ICs in the strong electromagnetic field can malfunction them. (8) Inspection with set PCB On the inspection with the set PCB, if a capacitor is connected to a low-impedance IC terminal, the IC can suffer stress. Therefore, be sure to discharge from the set PCB by each process. Furthermore, in order to mount or dismount the set PCB to/from the jig for the inspection process, be sure to turn OFF the power supply and then mount the set PCB to the jig. After the completion of the inspection, be sure to turn OFF the power supply and then dismount it from the jig. In addition, for protection against static electricity, establish a ground for the assembly process and pay thorough attention to the transportation and the storage of the set PCB. (9) Input terminals In terms of the construction of IC, parasitic elements are inevitably formed in relation to potential. The operation of the parasitic element can cause interference with circuit operation, thus resulting in a malfunction and then breakdown of the input terminal. Therefore, pay thorough attention not to handle the input terminals, such as to apply to the input terminals a voltage lower than the GND respectively, so that any parasitic element will operate. Furthermore, do not apply a voltage to the input terminals when no power supply voltage is applied to the IC. In addition, even if the power supply voltage is applied, apply to the input terminals a voltage lower than the power supply voltage or within the guaranteed value of electrical characteristics. (10) Ground wiring pattern If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well. (11) External capacitor In order to use a ceramic capacitor as the external capacitor, determine the constant with consideration given to a degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc. (12) About the rush current For ICs with more than one power supply, it is possible that rush current may flow instantaneously due to the internal powering sequence and delays. Therefore, give special consideration to power coupling capacitance, power wiring, width of GND wiring, and routing of wiring. (13) Others In case of use this LSI, please peruse some other detail documents, we called ,Technical note, Functional description, Application note. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 15/16 2011.05 - Rev.C Technical Note BU7150NUV ●Ordering part number B D 7 Part No. 1 5 0 N Part No. U V - Package NUV : VSON010V3030 E 2 Packaging and forming specification E2: Embossed tape and reel VSON010V3030 <Tape and Reel information> 3.0±0.1 3.0±0.1 0.08 S S Embossed carrier tape Quantity 3000pcs Direction of feed (0.22) +0.03 0.02 -0.02 1.0MAX 1PIN MARK Tape E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand ) 2.0±0.1 0.5 1 5 10 6 1.2±0.1 0.4±0.1 0.5 C0.25 +0.05 0.25 -0.04 1pin (Unit : mm) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Reel 16/16 Direction of feed ∗ Order quantity needs to be multiple of the minimum quantity. 2011.05 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A