D56/ www.daysemi.jp N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0036 at VGS = 10 V 70d 0.0044 at VGS = 4.5 V 70d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 67 APPLICATIONS D • Power Supply - Secondary Synchronous Rectification • DC/DC Converter TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Parameter Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID IDM Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 °C Operating Junction and Storage Temperature Range c V 70d 60d 120 IAS 45 EAS 101 PD Unit 78.1 A mJ b 3.1 W TJ, Tstg - 55 to 150 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 40 RthJC 1.6 °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. 1 D56/ www.daysemi.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = 250 µA 30 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS 2.5 ± 250 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 125 °C 50 VDS = 30 V, VGS = 0 V, TJ = 150 °C 250 ID(on) RDS(on) gfs VDS ≥ 10 V, VGS = 10 V 50 V nA µA A VGS = 10 V, ID = 22 A 0.0030 0.0036 VGS = 4.5 V, ID = 20 A 0.0036 0.0044 VDS = 15 V, ID = 20 A 110 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec 680 Rg Turn-On Delay Timec Rise Timec 67 VDS = 15 V, VGS = 10 V, ID = 20 A Fall Timec td(off) 100 nC 10.5 12.2 f = 1 MHz td(on) tr c pF 400 Qgd Gate Resistance Turn-Off Delay Time 3535 VGS = 0 V, VDS = 15 V, f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °C 0.3 1.4 2.8 11 20 10 20 35 53 10 20 70 Pulsed Current ISM 120 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 10 A, VGS = 0 V trr IRM(REC) Qrr ns b IS Continuous Current Ω IF = 10 A, dI/dt = 100 A/µs A 0.83 1.5 V 41 62 ns 2 3 A 40 60 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 0.0045 I D - Drain Current (A) R DS(on) - On-Resistance (Ω) VGS = 10 V thru 4 V 100 VGS = 3 V 80 60 40 0.0040 VGS = 4.5 V 0.0035 VGS = 10 V 0.0030 20 0 0.0 0.0025 0.5 1.0 1.5 2.0 0 20 40 VDS - Drain-to-Source Voltage (V) 80 100 ID - Drain Current (A) Output Characteristics On-Resistance vs. Drain Current 5 0.020 4 0.016 R DS(on) - On-Resistance (Ω) I D - Drain Current (A) 60 3 2 TC = 25 °C 1 0.012 0.008 TJ = 150 °C 0.004 TC = 125 °C 0 0.0 TJ = 25 °C TC = - 55 °C 0.6 1.2 1.8 2.4 0.000 3.0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 10 10 300 VGS - Gate-to-Source Voltage (V) g fs - Transconductance (S) ID = 20 A TC = - 55 °C 240 180 TC = 25 °C 120 TC = 125 °C 60 8 VDS = 15 V 6 VDS = 8 V VDS = 24 V 4 2 0 0 0 12 24 36 48 60 0 20 40 60 I D - Drain Current (A) Qg - Total Gate Charge (nC) Transconductance Gate Charge 80 3 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.1 100 I S - Source Current (A) 1.8 ID = 250 µA TJ = 150 °C VGS(th) (V) 10 TJ = 25 °C 1.5 1.2 1 0.9 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0.6 - 50 1.2 0 25 50 75 TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 5000 100 125 150 100 125 150 VDS - Drain-to-Source Voltage (V) 41 Ciss 4000 C - Capacitance (pF) - 25 VSD - Source-to-Drain Voltage (V) 3000 2000 Coss 1000 39 ID = 250 µA 37 35 Crss 0 0 5 10 15 20 25 33 - 50 30 - 25 0 25 50 75 VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 1.8 160 1.5 120 I D - Drain Current (A) (Normalized) R DS(on) - On-Resistance ID = 20 A 1.2 0.9 VGS = 10 V 0.6 - 50 4 80 40 VGS = 4.5 V - 25 Package Limited 0 25 0 50 75 100 125 150 0 25 50 75 100 TJ - Junction Temperature (°C) TC - Case Temperature (°C) On-Resistance vs. Junction Temperature Current Derating 125 150 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 100 Limited by RDS(on)* TJ = 25 °C TJ = 150 °C 10 I D - Drain Current (A) I DAV (A) 100 100 µA 10 1 ms 10 ms, 100 ms 1 s, 10 s, DC 1 TC = 25 °C Single Pulse 0.1 1 10-5 10-4 10-3 10-2 10-1 Time (s) Single Pulse Avalanche Current Capability vs. Time 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 5 Package Information TO-252AA CASE OUTLINE E C2 L3 H D b2 C A1 D1 e1 L gage plane height (0.5 mm) e L5 L4 b INCHES MILLIMETERS A b3 DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 E1 Note • Dimension L3 is for reference only. 1 Application Note RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE 1 Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. 1