Data Sheet HAT1111C R07DS1177EJ0700 (Previous: REJ03G0446-0600) Rev.7.00 Mar 19, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = –10 V) • Low drive current. • 4.5 V gate drive devices. • High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 4 5 DDD D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 6 G 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR PchNote 2 Tch Ratings –60 –20 / +10 –2 –8 –2 1.25 150 Unit V V A A A W °C Tstg –55 to +150 °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), PW ≤ 5 s, Ta = 25°C R07DS1177EJ0700 Rev.7.00 Mar 19, 2014 Page 1 of 6 HAT1111C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Symbol V(BR)DSS V(BR)GSS Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Min –60 Typ — Max — Unit V — — V IGSS IDSS VGS(th) RDS(on) RDS(on) | yfs | Ciss Coss Crss Qg Qgs Qgd td(on) tr –20 +10 — — –1 — — 0.65 — — — — — — — — — — — 245 310 1 290 40 20 6 0.7 1.2 20 25 ±10 -1 -2 307 450 — — — — — — — — — μA μA V mΩ mΩ S pF pF pF nC nC nC ns ns td(off) tf VDF — — — 37 4 –0.85 — — –1.2 ns ns V Test Conditions ID = –10 mA, VGS = 0 IG = ±100 μA, VDS = 0 VGS = –16 / +8 V, VDS = 0 VDS = –60 V, VGS = 0 ID = –1 mA, VDS = -10 V Note3 ID = –1 A, VGS = -10 V Note3 ID = –1 A, VGS = -4.5 V Note3 ID = –1 A, VDS = -10 V Note3 VDS = –10 V, VGS = 0 f = 1 MHz VDS = –10 V, VGS = –10 V ID = –2 A VDS = –10 V, VGS = –10 V ID = –1 A, RL = 10 Ω, Rg = 4.7 Ω IF = –2 A, VGS = 0 Notes: 3. Pulse test R07DS1177EJ0700 Rev.7.00 Mar 19, 2014 Page 2 of 6 HAT1111C Main Characteristics Power vs. Temperature Derating ID (A) Pch (W) -30 0.8 0.4 100 150 Ambient Temperature 200 When using the FR4 board. 100 μs PW -1 -0.1 m -1 -3 -10 -30 -100 VDS (V) Typical Transfer Characteristics -10 -6 -3.5 V ID (A) -4 V VDS = -10 V Pulse Test Drain Current ID (A) Drain Current s area is limited by RDS(on) Drain to Source Voltage -8 -3 V -2 m Operation in this -0.01 -0.03 -0.1 -0.3 Pulse Test -4 10 s Ta (°C) -4.5 V -10 V 1 = -0.3 Typical Output Characteristics -10 10 μs -3 -0.03 50 Ta = 25°C,1shot pulse -10 Drain Current Power Dissipation 1.2 0 Maximum Safe Operation Area -100 1.6 -8 -6 25°C Tc = 75°C −25°C -4 -2 -2.5 V VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (mV) -800 0 -2 -4 -6 Gate to Source Voltage -8 -10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test -4.5V -600 VGS = 10 V ID = -2 A -400 100 -1 A -200 -0.5 A 0 -4 -8 -12 Gate to Source Voltage R07DS1177EJ0700 Rev.7.00 Mar 19, 2014 -16 -20 VGS (V) 10 -0.01 Pulse Test -0.1 Drain Current -1 -10 ID (A) Page 3 of 6 HAT1111C Forward Transfer Admittance |yfs| (S) Static Drain to Source On State Resistance vs. Temperature 1000 800 ID = -0.5,-1 A 600 -2 A -2 A -4.5V 400 -0.5,-1 A VGS = -10V 200 0 −25 Pulse Test 0 25 50 75 100 125 150 Case Temperature 100 30 25°C 3 0.3 0.1 -0.1 -8 VDD -60 -12 VGS Ciss 300 100 Coss 30 10 Crss 0 -10 -20 -30 -40 -60 -50 VDS (V) Switching Characteristics tr Switching Time t (ns) IDR (A) Reverse Drain Current 1000 1000 VGS = 0 , 10 V -4 -2 Pulse Test -1.2 Source to Drain Voltage R07DS1177EJ0700 Rev.7.00 Mar 19, 2014 -100 VGS = 0 f = 1 MHz Drain to Source Voltage -10 V -0.8 -30 ID (A) 1 -16 10 6 8 Qg (nC) -10 -0.4 -10 3 Reverse Drain Current vs. Source to Drain Voltage 0 -3 3000 Capacitance C (pF) VDD = -10 V -25 V -50 V VGS (V) -4 -6 -1 10000 Gate to Source Voltage VDS (V) Drain to Source Voltage -20 -8 -0.3 Typical Capacitance vs. Drain to Source Voltage 0 2 4 Gate Charge VDS = -10 V Pulse Test Drain Current VDD = -50 V -25 V -10 V -80 0 75°C 1 Tc (°C) 0 ID = -2 A Tc = −25°C 10 Dynamic Input Characteristics -40 Forward Transfer Admittance vs. Drain Current -1.6 VSD (V) -2.0 100 td(off) td(on) 10 tf 1 -0.01 -0.03 -0.1 -0.3 Drain Current -1 -3 -10 ID (A) Page 4 of 6 HAT1111C Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor Vin 10% D.U.T. RL 90% 4.7 Ω Vin -4.5 V V DD = -10 V Vout td(on) R07DS1177EJ0700 Rev.7.00 Mar 19, 2014 90% 90% 10% 10% tr td(off) tf Page 5 of 6 HAT1111C Package Dimensions JEITA Package Code ⎯ Package Name CMFPAK-6 RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g D A e c E A HE A x M LP L S b A e A2 Reference Symbol A A1 y S S e1 b l1 b1 c Pattern of terminal position areas A-A Section A A1 A2 b c D E e HE L LP x y b1 e1 l1 Dimension in Millimeters Min 0.7 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.2 0.15 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.25 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.3 1.9 0.4 Ordering Information Orderable Part Number HAT1111C-EL-E R07DS1177EJ0700 Rev.7.00 Mar 19, 2014 Quantity 3000 pcs Shipping Container Taping Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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