IP IPT0808-BEF High current density due to double mesa technology Datasheet

IPT0808-xxF
IP Semiconductor Co., Ltd.
High current density due to double mesa technology;
SIPOS and Glass Passivation. IPT0808-xx series are
suitable for general purpose AC Switching.
They can be used as an ON/OFF function In application
such as static relays, heating regulation, Induction
motor stating circuits… or for phase Control operation
light dimmers, motor speed Controllers.
IPT0808-xx series is 3 Quadrants triacs, This is specially
recommended for use on inductive Loads.
TO-220F
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
8
A
VDRM / VRRM
800
V
VTM
≤ 1.55
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Symbol
Value
Unit
Tstg
Tj
-40 to +150
-40 to +125
℃
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
VDRM
VRRM
800
800
V
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
VDSM
VRSM
900
900
V
RMS on–state current
(Full sine wave)
Tc =95℃
IT(RMS)
8
A
ITSM
80
84
A
I²t
36
A²s
dI / dt
50
A/us
IGM
4
A
PG(AV)
1
W
Non repetitive surge peak on–state Current
(full cycle, Tj = 25℃)
I²t Value for fusing
f = 60Hz t = 16.7ms
f = 50 Hz t = 20ms
tp = 10ms
Critical Rate of rise of on-state current
IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃
Peak gate current
tp = 20us, Tj = 125 ℃
Average gate power dissipation
Tj = 125 ℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
1
IPT0808-xxF
ELECTRICAL CHARACTERISTICS(Tj = 25 ℃ unless otherwise specified)
IPT0808-xxF
Symbol
Test Condition
Quadrant
IGT
VD = 12V RL = 33Ω
VGT
VGD
VD=VDRM, RL=3.3KΩ,
Tj = 125 ℃
Unit
dV/dt
10
35
50
I – II – III
MAX
1.3
V
I – II – III
MIN
0.2
V
IG = 1.2 IGT
25
50
70
30
60
80
mA
MAX
mA
IT = 500mA
MAX
15
35
50
mA
VD = 67% VDRM gate open Tj = 125 ℃
MIN
40
500
1000
V/us
5.4
-
-
2.8
-
-
-
4.5
7.0
(dV/dt) c=0.1V/us Tj = 125 ℃
(dI/dt)c
BE
MAX
II
IH
CE
I – II – III
I – III
IL
SE
(dV/dt) c=10V/us Tj = 125 ℃
MIN
Without snubber Tj = 125 ℃
A/ms
STATIC CHARACTERISTICS
Symbol
Test Conditions
Value(MAX)
Unit
VTM
ITM = 17A, t p = 380uS
Tj = 125 ℃
1.55
V
IDRM
VD = VDRM
Tj = 125 ℃
5
uA
IRRM
VR = VRRM
Tj = 125 ℃
1
mA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j – c)
Junction to case (AC)
1.6
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
2
IPT0808-xxF
PACKAGE MECHANICAL DATA
TO-220F
Dimensions
Ref
Millimeters
Min
Typ
Inches
Max
Min
4.7
0.169
0.83
0.029
Typ
Max
A
4.30
B
0.74
C
0.5
0.75
0.020
0.030
C2
2.4
2.7
0.094
0.106
C3
2.5
2.9
0.098
0.114
D
8.6
9.2
0.338
0.362
E
9.7
10.3
0.382
0.406
F
6.2
6.6
0.136
0.143
G
5
5.2
0.197
0.205
H
28.0
29.8
11.0
11.7
L1
L2
0.8
3.63
1.14
0.185
0.031
0.033
0.143
1.7
0.044
0.067
L3
3.2
0.126
V1
40º
40º
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
3
IPT0808-xxF
IPT0808-xxF
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
4
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