Cypress CY7C136E-55JXC 1 k / 2 k x 8 dual-port static ram Datasheet

CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
1 K / 2 K × 8 Dual-port Static RAM
1 K / 2 K × 8 Dual-port Static RAM
Features
Functional Description
■
True dual-ported memory cells, which allow simultaneous
reads of the same memory location
■
1 K / 2 K × 8 organization
■
0.35 micron complementary metal oxide semiconductor
(CMOS) for optimum speed and power
■
High speed access: 15 ns
■
Low operating power: ICC = 110 mA (typical),
Standby: ISB3 = 0.05 mA (typical)
CY7C131E / CY7C131AE / CY7C136E / CY7C136AE are
high-speed, low-power CMOS 1 K / 2 K × 8 dual-port static
RAMs. Two ports are provided permitting independent access to
any location in memory. The CY7C131E / CY7C131AE /
CY7C136E / CY7C136AE can be used as a standalone dual-port
static RAM. It is the solution to applications requiring shared or
buffered data, such as cache memory for DSP, bit-slice, or multiprocessor designs.
■
Fully asynchronous operation
■
Automatic power-down
■
BUSY output flag to indicate access to the same location by
both ports
■
INT flag for port-to-port communication
■
Available in 52-pin plastic leaded chip carrier (PLCC), 52-pin
plastic quad flat package (PQFP)
■
Pb-free packages available
Each port has independent control pins; chip enable (CE), write
enable (R/W), and output enable (OE). Two flags are provided
on each port, BUSY and INT. The BUSY flag signals that the port
is trying to access the same location, which is currently being
accessed by the other port. The INT is an interrupt flag indicating
that data is placed in a unique location[1]. The BUSY and INT
flags are push pull outputs. An automatic power-down feature is
controlled independently on each port by the chip enable (CE)
pins.
The CY7C131E / CY7C131AE / CY7C136E / CY7C136AE are
available in 52-pin Pb-free PLCC and 52-pin Pb-free PQFP.
Logic Block Diagram
R/WL
CEL
R/WR
CER
OEL
OER
I/O7L
I/O
CONTROL
I/O0L
[2]
BUSYL
I/O
CONTROL
I/O7R
I/O0R
[2]
BUSYR
A 9/10L
[4]
A 0L
ADDR
DECODER
CEL
OEL
MEMORY
ARRAY
ADDR
DECODER
7C131E/7C131AE/
ARBITRATION
7C136E/7C136AE
LOGIC
ARBITRATION
(7C130/7C131 LOGIC
ONLY)
A 9/10R
[4]
A 0R
CER
AND
INTERRUPT LOGIC
OER
INTERRUPT LOGIC
R/WL
R/WR
[3]
INTL
[3]
INTR
Notes
1. Unique location used by interrupt flag: 1 K × 8: Left port reads from 3FE, Right port reads from 3FF; 2 K × 8: Left port reads from 7FE, Right port reads from 7FF.
2. BUSY is a push-pull output. No pull-up resistor required.
3. INT: push-pull output. No pull-up resistor required.
4. 1 K × 8: A0–A9, 2 K × 8: A0–A10, address lines are for both left and right ports.
Cypress Semiconductor Corporation
Document Number: 001-64231 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised May 15, 2013
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Contents
Pin Configurations ........................................................... 3
Pin Definitions .................................................................. 3
Selection Guide ................................................................ 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance[10] ................................................................ 5
AC Test Loads and Waveforms ....................................... 5
Switching Characteristics ................................................ 6
Switching Characteristics ................................................ 8
Switching Waveforms .................................................... 10
Ordering Information ...................................................... 15
Ordering Code Definitions ......................................... 15
Package Diagrams .......................................................... 16
Acronyms ........................................................................ 17
Document Number: 001-64231 Rev. *E
Document Conventions ................................................. 17
Units of Measure ....................................................... 17
Appendix: Silicon Errata for
CY7C131E/131AE/136E/136AE 1K/2K × 8
Dual Port Static RAM ...................................................... 18
Part Numbers Affected .............................................. 18
CY7C131E/131AE/136E/136AE
Qualification Status ........................................................... 18
CY7C131E/131AE/136E/136AE
Errata Summary ............................................................... 18
Document History Page ................................................. 19
Sales, Solutions, and Legal Information ...................... 20
Worldwide Sales and Design Support ....................... 20
Products .................................................................... 20
PSoC Solutions ......................................................... 20
Page 2 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Pin Configurations
Figure 1. Pin Diagram - 52-pin PLCC (Top View)
[5]
I/O5R
I/O6R
A6R
A7R
A8R
A9R
NC
I/O7R
CER
R/WR
BUSYL
R/W
L
CEL
VCC
A0L
OEL
NC/A10L
INTL
OER
A0R
A1R
A2R
A3R
A4R
A5R
BUSYR
INTR
NC/A10R
[5]
[5]
BUSYR
INTR
NC/A10R
52 51 50 49 48 47 46 45 44 43 42 41 40
A1L
A2L
A3L
A4L
A5L
A6L
A7L
A8L
A9L
I/O0L
I/O1L
I/O2L
I/O3L
1
2
3
4
5
6
7
8
9
10
11
12
13
OER
A0R
A1R
A2R
A3R
A4R
A5R
39
38
37
36
35
34
33
32
31
30
29
28
27
7C131E/7C131AE
7C136E/7C131AE
A6R
A7R
A8R
A9R
NC
I/O7R
I/O5R
I/O6R
I/O2R
I/O3R
I/O4R
NC
GND
I/O0R
I/O1R
I/O 4L
I/O 5L
14 15 16 17 18 19 20 21 22 23 24 25 26
I/O 6L
I/O 7L
CER
R/WR
I/O2R
I/O3R
I/O4R
I/O0R
I/O1R
NC
GND
I/O 6L
I/O 7L
7 6 5 4 3 2 1 52 51 50 49 48 47
46
45
44
43
42
41
7C131E/7C131AE
40
7C136E/7C136AE
39
38
37
36
35
34
2122 23 24 25 26 27 28 29 30 31 32 33
I/O 4L
I/O 5L
8
9
10
11
12
13
14
15
16
17
18
19
20
BUSYL
R/W
L
CEL
VCC
A0L
OEL
NC/A10L
INTL
[5]
A1L
A2L
A3L
A4L
A5L
A6L
A7L
A8L
A9L
I/O0L
I/O1L
I/O2L
I/O3L
Figure 2. Pin Diagram - 52-pin PQFP (Top View)
Pin Definitions
Left Port
Right Port
Description
CEL
CER
Chip Enable
R/WL
R/WR
Read/Write Enable
OER
Output Enable
A0R–A9/10R[5]
Address
I/O0L–I/O7L
I/O0R–I/O7R
Data Bus Input/Output
INTL
INTR
Interrupt Flag
BUSYL
BUSYR
Busy Flag
OEL
A0L–A9/10L
[5]
VCC
Power
GND
Ground
Selection Guide
Parameter
7C131E-15
7C131AE-15
7C131E-25
7C136E-25
7C131E-55
7C136E-55
7C136AE-55
Unit
Maximum Access Time
15
25
55
ns
Typical Operating Current
110
100
95
mA
Typical Standby Current for ISB1 (both ports TTL level)
Typical Standby Current for ISB3 (Both ports CMOS level)
50
45
45
mA
0.05
0.05
0.05
mA
Note
5. 1 K × 8: A0–A9, 2 K × 8: A0–A10, address lines are for both left and right ports.
Document Number: 001-64231 Rev. *E
Page 3 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
DC input voltage[8] .......................................–0.5 V to +7.0 V
Maximum Ratings
Exceeding maximum ratings [6] may shorten the useful life of the
device. User guidelines are not tested.
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage .......................................... >1100 V
Storage temperature ................................ –65 C to +150 C
Latch up current ..................................................... >200 mA
Ambient temperature with
power applied .......................................... –55 C to +125 C
Operating Range
Supply voltage to ground potential ..............–0.3 V to +7.0 V
Range
Commercial
Industrial
DC voltage applied to outputs
in High Z State .............................................–0.5 V to +7.0 V
Ambient Temperature
0C to +70 C
–40 C to +85 C
VCC
5 V ± 10%
5 V ± 10%
Electrical Characteristics
Over the Operating Range
Parameter
VOH
VOL
VIH
VIL
IOZ
ICC
ISB1
ISB2
ISB3
ISB4
Description
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
Output
Leakage
Current
VCC Operating
Supply Current
Standby
Current,
Both Ports,
TTL Inputs
Standby
Current,
One Port,
TTL Inputs
Standby
Current,
Both Ports,
CMOS Inputs
Standby
Current,
One Port,
CMOS Inputs
Test Conditions
VCC = Min, IOH = –4.0 mA
VCC = Min, IOL = 4.0 mA
GND < VO < VCC,
Output disabled
7C131E-55
7C136E-55
Unit
7C136AE-55
Min Typ[9] Max Min Typ[9] Max Min Typ[9] Max
2.4
–
–
2.4
–
–
2.4
–
V
7C131E-15
7C131AE-15
7C131E-25
7C136E-25
–
–
0.4
–
0.4
–
–
2.2
–
–
–
–
2.2
–
–
–
0.8
–
0.8
–
–
0.8
V
–20
–
+20 –20
–
+20 –20
–
+20
A
110
115
50
65
190
200
70
95
–
95
105
45
65
160
170
65
95
mA
VCC = Max, IOUT = 0 mA
Outputs disabled
CEL and CER > VIH,
f = fMAX[7]
Commercial
Industrial
Commercial
Industrial
–
CEL or CER > VIH,
Active Port Outputs
Open,
f = fMAX[7]
Both Ports
CEL and CER > VCC –
0.2 V,
VIN > VCC – 0.2 V
or VIN < 0.2 V, f = 0
One Port
CEL or CER > VCC – 0.2
V,
VIN > VCC – 0.2 V
or VIN < 0.2 V,
Active Port Outputs Open,
f = fMAX[7]
Commercial
Industrial
–
120
135
180
205
Commercial
Industrial
–
0.05
0.05
Commercial
Industrial
–
110
125
–
2.2
0.4
V
V
100
110
45
65
170
180
65
95
–
–
110
135
160
205
–
110
135
160
205
mA
0.5
0.5
–
0.05
0.05
0.5
0.5
–
0.05
0.05
0.5
0.5
mA
160
175
–
100
125
140
175
–
100
125
140
175
mA
–
–
mA
Notes
6. The voltage on any I/O pin cannot exceed the power pin during power-up.
7. At f = fMAX, address and data inputs are cycling at the maximum frequency of read cycle of 1/tRC and using AC Test Waveforms input levels of GND to 3 V.
8. Pulse width < 20 ns.
9. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25 °C.
Document Number: 001-64231 Rev. *E
Page 4 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Capacitance[10]
Parameter
Description
CIN
Input capacitance
COUT
Output capacitance
Test Conditions
TA = 25 C, f = 1 MHz, VCC = 5.0 V
Max
Unit
15
pF
10
pF
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms
5V
5V
R1 = 893 
OUTPUT
C = 30 pF
OUTPUT
R2 = 347 
RTH = 250 
R1 = 893 
OUTPUT
C = 30 pF
C = 5 pF
VTH = 1.4 V
(a) Normal Load (Load 1)
ALL INPUT PULSES
3.0 V
GND
10%
90%
 5 ns
(b) Thévenin Equivalent (Load 1)
R2 = 347 
(c) Three-State Delay (Load 2)
(Used for tLZ, tHZ, tHZWE, and tLZWE
including scope and jig)
(CY7C131E/CY7C131AE ONLY)
90%
10%
5ns
Note
10. Tested initially and after any design or process changes that may affect these parameters.
Document Number: 001-64231 Rev. *E
Page 5 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Switching Characteristics
Over the Operating Range
Parameter [11]
Description
7C131E-15/7C131AE-15
Min
7C131E-25/7C136E-25
Max
Min
Max
Unit
Read Cycle
tRC
Read cycle time
15
–
25
–
ns
tAA
Address to data valid [12]
–
15
–
25
ns
tOHA
Data hold from Address change
3
–
3
–
ns
CE LOW to data valid
[12]
–
15
–
25
ns
tDOE
OE LOW to data valid
[12]
–
10
–
15
ns
tLZOE
OE LOW to Low Z [13, 14, 15]
3
–
3
–
ns
–
10
–
15
ns
3
–
5
–
ns
–
10
–
15
ns
0
–
0
–
ns
–
15
–
25
ns
tACE
OE HIGH to High Z
tHZOE
CE LOW to Low Z
tLZCE
[13, 14, 15]
[13, 14, 15]
[13, 14, 15]
tHZCE
CE HIGH to High Z
tPU
CE LOW to power-up [13]
CE HIGH to power-down
tPD
Write Cycle
[13]
[16]
tWC
Write cycle time
15
–
25
–
ns
tSCE
CE LOW to write end
12
–
20
–
ns
tAW
Address setup to write end
12
–
20
–
ns
tHA
Address hold from write end
0
–
0
–
ns
tSA
Address setup to write start
0
–
0
–
ns
tPWE
R/W pulse width
10
–
12
–
ns
tSD
Data setup to write end
10
–
15
–
ns
tHD
Data hold from write end
tHZWE[13]
tLZWE[13]
0
–
0
–
ns
[15]
–
10
–
15
ns
R/W HIGH to Low Z [15]
3
–
3
–
ns
R/W LOW to High Z
Notes
11. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V and output loading of the specified IOL/IOH,
and 30 pF load capacitance.
12. AC Test Conditions use VOH = 1.6 V and VOL = 1.4 V.
13. This parameter is guaranteed but not tested.
14. At any given temperature and voltage condition for any given device, tHZCE is less than tLZCE and tHZOE is less than tLZOE.
15. Parameters tLZCE, tLZWE, tHZOE, tLZOE, tHZCE and tHZWE are tested with CL = 5 pF as in part (c) of Figure 3 on page 5. Transition is measured ±500 mV from steady
state voltage.
16. The internal write time of the memory is defined by the overlap of CE LOW and R/W LOW. Both signals must be low to initiate a write and either signal can terminate
Document Number: 001-64231 Rev. *E
Page 6 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Switching Characteristics (continued)
Over the Operating Range
Parameter [11]
7C131E-15/7C131AE-15
Description
7C131E-25/7C136E-25
Unit
Min
Max
Min
Max
–
15
–
20
ns
–
15
–
20
ns
Busy/Interrupt Timing[17]
tBLA
BUSY LOW from Address match
[18]
tBHA
BUSY HIGH from Address mismatch
tBLC
BUSY LOW from CE LOW
–
15
–
20
ns
tBHC
BUSY HIGH from CE HIGH [18]
–
15
–
20
ns
tPS
Port setup for priority
5
–
5
–
ns
tBDD
BUSY HIGH to valid data
–
15
–
25
ns
[19]
tDDD
Write data valid to read data valid
–
25
–
30
ns
tWDD
Write pulse to data delay [19]
–
30
–
45
ns
tWINS
R/W to INTERRUPT set time
–
15
–
25
ns
tEINS
CE to INTERRUPT set time
–
15
–
25
ns
tINS
Address to INTERRUPT set time
–
15
–
25
ns
OE to INTERRUPT reset time
[18]
–
15
–
25
ns
CE to INTERRUPT reset time
[18]
–
15
–
25
ns
–
15
–
25
ns
Interrupt Timing
tOINR
tEINR
tINR
Address to
INTERRUPT reset time [18]
Notes
17. Test conditions used are Load 2.
18. These parameters are measured from the input signal changing, until the output pin goes to a high impedance state.
19. A write operation on Port A, where Port A has priority, leaves the data on Port B’s outputs undisturbed until one access time after one of the following:
BUSY on Port B goes HIGH.
Port B’s address toggled.
CE for Port B is toggled.
Document Number: 001-64231 Rev. *E
Page 7 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Switching Characteristics
Over the Operating Range
Parameter
Description
7C131E-55
7C136E-55
7C136AE-55
Min
Max
Unit
Read Cycle
tRC
tAA
tOHA
tACE
tDOE
tLZOE
Read cycle time
Address to data valid [21]
Data hold from Address change
CE LOW to data valid [21]
OE LOW to data valid [21]
55
–
3
–
–
–
55
–
55
25
ns
ns
ns
ns
ns
OE LOW to Low Z [21, 22, 23]
OE HIGH to High Z [21, 22, 23]
CE LOW to Low Z [21, 22, 23]
CE HIGH to High Z [21, 22, 23]
CE LOW to power-up [22]
CE HIGH to power-down [22]
3
–
5
–
0
–
–
25
–
25
–
35
ns
ns
ns
ns
ns
ns
55
40
40
2
0
30
20
0
–
3
–
–
–
–
–
–
–
–
25
–
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
–
–
–
–
5
–
30
30
30
30
–
45
ns
ns
ns
ns
ns
ns
tHZOE
tLZCE
tHZCE
tPU
tPD
Write Cycle
tWC
Write cycle time
tSCE
CE LOW to write end
tAW
Address setup to write end
tHA
Address hold from write end
tSA
Address setup to write start
tPWE
R/W pulse width
tSD
Data setup to write end
tHD
Data hold from write end
tHZWE
R/W LOW to High Z [24]
R/W HIGH to Low Z [24]
tLZWE
Busy/Interrupt Timing[20]
tBLA
BUSY LOW from Address match
tBHA
BUSY HIGH from Address mismatch [25]
tBLC
BUSY LOW from CE LOW
tBHC
BUSY HIGH from CE HIGH [25]
tPS
Port setup for priority
tBDD
BUSY HIGH to valid data
Notes
20. Test conditions used are Load 2.
21. The internal write time of the memory is defined by the overlap of CE LOW and R/W LOW. Both signals must be low to initiate a write and either signal can terminate
a write by going high. The data input setup and hold timing should be referenced to the rising edge of the signal that terminates the write.
22. AC Test Conditions use VOH = 1.6 V and VOL = 1.4 V.
23. These parameters are measured from the input signal changing, until the output pin goes to a high impedance state.
24. Parameters tLZCE, tLZWE, tHZOE, tLZOE, tHZCE and tHZWE are tested with C = 5 pF as in part (b) of Figure 3 on page 5. Transition is measured ±500 mV from steady
state voltage.
25. A write operation on Port A, where Port A has priority, leaves the data on Port B’s outputs undisturbed until one access time after one of the following:
BUSY on Port B goes HIGH.
Port B’s address toggled.
CE for Port B is toggled.
R/W for Port B is toggled during valid read.
Document Number: 001-64231 Rev. *E
Page 8 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Switching Characteristics (continued)
Over the Operating Range
Parameter
Description
tDDD
Write data valid to read data valid [26]
tWDD
Write pulse to data delay [26]
Interrupt Timing
tWINS
R/W to INTERRUPT set time
tEINS
CE to INTERRUPT set time
tINS
Address to INTERRUPT set time
tOINR
OE to INTERRUPT reset time [27]
tEINR
CE to INTERRUPT reset time [27]
tINR
Address to
INTERRUPT reset time [27]
7C131E-55
7C136E-55
7C136AE-55
Min
Max
–
30
–
45
Unit
ns
ns
–
–
–
–
45
45
45
45
ns
ns
ns
ns
–
–
45
45
ns
ns
Notes
26. A write operation on Port A, where Port A has priority, leaves the data on Port B’s outputs undisturbed until one access time after one of the following:
BUSY on Port B goes HIGH.
Port B’s address toggled.
CE for Port B is toggled.
R/W for Port B is toggled during valid read.
27. These parameters are measured from the input signal changing, until the output pin goes to a high impedance state.
Document Number: 001-64231 Rev. *E
Page 9 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Switching Waveforms
Figure 4. Read Cycle No. 1 [28, 29]
Either Port ADDR Access
tRC
ADDR
tAA
tOHA
DATA OUT
PREVIOUS DATAVALID
DATA VALID
Figure 5. Read Cycle No. 2 [28, 30]
Either Port CE/OE Access
CE
tHZCE
tACE
OE
tLZOE
tHZOE
tDOE
tLZCE
DATA VALID
DATA OUT
tPU
tPD
ICC
ISB
Figure 6. Write Cycle No. 1 (OE Three-States Data I/Os – Either Port) [31, 32]
Either Port
tWC
ADDR
tSCE
CE
tSA
tAW
tPWE
tHA
R/W
tSD
DATAIN
tHD
DATA VALID
OE
tHZOE
HIGH IMPEDANCE
DOUT
Notes
28. R/W is HIGH for read cycle.
29. Device is continuously selected, CE = VIL and OE = VIL.
30. Address valid prior to or coincident with CE transition LOW.
31. The internal write time of the memory is defined by the overlap of CE LOW and R/W LOW. Both signals must be LOW to initiate a write and either signal can
terminate a write by going HIGH. The data input setup and hold timing must be referenced to the rising edge of the signal that terminates the write.
32. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or tHZWE + tSD to allow the data I/O pins to enter high impedance
and for data to be placed on the bus for the required tSD.
Document Number: 001-64231 Rev. *E
Page 10 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Switching Waveforms (continued)
Figure 7. Write Cycle No. 2 (R/W Three-States Data I/Os – Either Port) [33, 34]
tWC
ADDR
tSCE
tHA
CE
tAW
tSA
tPWE[36]
R/W
tSD
DATAIN
tHD
DATA VALID
tLZWE
[37]
tHZWE
HIGH IMPEDANCE
DATAOUT
Figure 8. Read Cycle No. 3 [35]
Read with BUSY
tRC
ADDR R
ADDR MATCH
tPWE
R/WR
tHD
DINR
VALID
ADDR MATCH
ADDR L
tPS
tBHA
BUSYL
tBLA
tBDD
DOUTL
VALID
tWDD
tDDD
Notes
33. These parameters are measured from the input signal changing, until the output pin goes to a high impedance state.
34. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in a high impedance state.
35. CEL = CER = LOW.
36. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or (tHZWE + tSD) to allow the I/O drivers to turn off and
data to be placed on the bus for the required tSD. If OE is HIGH during a R/Wn controlled write cycle, this requirements does not apply and the write pulse can
be as short as the specified tPWE.
37. Transition is measured ±500 mV from steady state with a 5 pF load (including scope and jig). This parameter is sampled and not 100% tested.
Document Number: 001-64231 Rev. *E
Page 11 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Switching Waveforms (continued)
Figure 9. Busy Timing Diagram No. 1 (CE Arbitration)[38]
CEL Valid First:
ADDR L,R
ADDR MATCH
CEL
tPS
CER
tBLC
tBHC
BUSYR
CER Valid First:
ADDRL,R
ADDR MATCH
CER
tPS
CEL
tBLC
tBHC
BUSYL
Figure 10. Busy Timing Diagram No. 2 (ADDR Arbitration)[38]
Left ADDR Valid First:
tRC or tWC
ADDR MATCH
ADDRL
ADDR MISMATCH
tPS
ADDR R
tBLA
tBHA
BUSYR
Right Address Valid First:
tRC or tWC
ADDR MATCH
ADDRR
ADDR MISMATCH
tPS
ADDRL
tBLA
tBHA
BUSYL
Note
38. If tPS is violated, the busy signal will be asserted on one side or the other, but there is no guarantee to which side BUSY will be asserted.
Document Number: 001-64231 Rev. *E
Page 12 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Switching Waveforms (continued)
Figure 11. Interrupt Timing Diagrams
Left Side Sets INTR
tWC
ADDR L
WRITE 3FF/7FF
[40]
[39]
tINS
tHA
CEL
tEINS
R/WL
tSA
tWINS
INTR
Right Side Clears INTR
tRC
ADDRR
READ 3FF/7FF
[40]
tHA
[39]
tINR
CER
tEINR
R/WR
OER
tOINR
INTR
Notes
39. Parameter tINS or tINR depends on which enable pin (CEL or R/WL) is asserted last.
40. Parameter tHA depends on which enable pin (CEL or R/WL) is deasserted first.
Document Number: 001-64231 Rev. *E
Page 13 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Switching Waveforms (continued)
Figure 12. Interrupt Timing Diagrams
Right Side Sets INTL
t WC
ADDRR
WRITE 3FE/7FE
[41]
tHA[42]
tINS
CER
tEINS
R/WR
tSA
tWINS
INTL
Left Side Clears INTL
tRC
ADDR R
READ 3FE/7FE
[42]
tHA
[41]
tINR
CEL
tEINR
R/WL
OEL
tOINR
INTL
Notes
41. Parameter tINS or tINR depends on which enable pin (CEL or R/WL) is asserted last.
42. Parameter tHA depends on which enable pin (CEL or R/WL) is deasserted first.
Document Number: 001-64231 Rev. *E
Page 14 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Ordering Information
Speed
(ns)
Ordering Code
Package Name
Package Type
Operating Range
1 K × 8 Dual-port SRAM
15
25
55
CY7C131AE-15JXI
51-85004
52-pin Pb-free Plastic Leaded Chip Carrier
CY7C131E-15NXI
51-85042
52-pin Pb-free Plastic Quad Flatpack
Industrial
CY7C131E-25JXC
51-85004
52-pin Pb-free Plastic Leaded Chip Carrier
CY7C131E-25NXC
51-85042
52-pin Pb-free Plastic Quad Flatpack
CY7C131E-55JXC
51-85004
52-pin Pb-free Plastic Leaded Chip Carrier
CY7C131E-55NXC
51-85042
52-pin Pb-free Plastic Quad Flatpack
CY7C131E-55JXI
51-85004
52-pin Pb-free Plastic Leaded Chip Carrier
CY7C131E-55NXI
51-85042
52-pin Pb-free Plastic Quad Flatpack
CY7C136E-25JXC
51-85004
52-pin Pb-free Plastic Leaded Chip Carrier
CY7C136E-25NXC
51-85042
52-pin Pb-free Plastic Quad Flatpack
CY7C136E-25JXI
51-85004
52-pin Pb-free Plastic Leaded Chip Carrier
Industrial
CY7C136E-55JXC
51-85004
52-pin Pb-free Plastic Leaded Chip Carrier
Commercial
CY7C136E-55NXC
51-85042
52-pin Pb-free Plastic Quad Flatpack
CY7C136AE-55JXI
51-85004
52-pin Pb-free Plastic Leaded Chip Carrier
CY7C136AE-55NXI
51-85042
52-pin Pb-free Plastic Quad Flatpack
Commercial
Commercial
Industrial
2 K × 8 Dual-port SRAM
25
55
Commercial
Industrial
Ordering Code Definitions
CY 7
C 13X X
E - XX X
X
X
Temperature Grade: X = I or C
I = Industrial; C = Commercial
Pb-free
Package Type: X = J or N
J = 52-pin PLCC; N = 52-pin PQFP
Speed Grade: XX = 15 ns or 25 ns or 55 ns
Process Version R4 = E
X = A or blank
Part Identifier: 13X = 131 or 136
Technology Code: C = CMOS
Marketing Code: 7 = SRAM
Company ID: CY = Cypress
Document Number: 001-64231 Rev. *E
Page 15 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Package Diagrams
Figure 13. 52-pin PLCC (0.756 × 0.756 Inches) J52 Package Outline, 51-85004
51-85004 *D
Figure 14. 52-pin PQFP (10 × 10 × 2.0 mm) N5210 Package Outline, 51-85042
51-85042 *D
Document Number: 001-64231 Rev. *E
Page 16 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Acronyms
Acronym
Document Conventions
Description
Units of Measure
CE
Chip Enable
CMOS
Complementary Metal Oxide Semiconductor
°C
degree Celsius
I/O
Input/Output
µA
microampere
OE
Output Enable
mA
milliampere
PLCC
Plastic Leaded Chip Carrier
mV
millivolt
PQFP
Plastic Quad Flat Package
ns
nanosecond
SRAM
Static Random Access Memory

ohm
TTL
Transistor-Transistor Logic
%
percent
WE
Write Enable
pF
picofarad
V
volt
W
watt
Document Number: 001-64231 Rev. *E
Symbol
Unit of Measure
Page 17 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Appendix: Silicon Errata for CY7C131E/131AE/136E/136AE 1K/2K × 8 Dual Port Static RAM
This section describes the errata for the 1K/2K × 8 Dual Port Static RAM, CY7C131E/131AE/136E/136AE. Details include errata
trigger conditions, scope of impact, available workarounds, and silicon revision applicability.
Contact your local Cypress Sales Representative if you have questions.
Part Numbers Affected
Part Number
Device Characteristics
CY7C131E/AE
All Speed Grades
CY7C136E/AE
All Speed Grades
CY7C131E/131AE/136E/136AE Qualification Status
Product Status: In Production
CY7C131E/131AE/136E/136AE Errata Summary
This table defines the errata applicability to available CY7C131E/131AE/136E/136AE family devices. An "X" indicates that the errata
pertains to the selected device.
Note Errata items, in the table below, are hyperlinked. Click on any item entry to jump to its description.
Items
[1] Chip Disable Issue
Part Number
Silicon Revision
CY7C131E/131AE/136E/13
6AE
[X]
Fix Status
Fix in progress. Fixed samples to be available
from early April 2012.
1. Chip Disable Issue
■
■
■
■
■
■
Problem Definition
Chip Enable pin (CE) does not tristate I/Os of the Dual Port RAM under certain input conditions.
Parameters Affected
tHZCE (CE HIGH to High Z). CE HIGH does not tristate the I/Os.
Trigger Condition(s)
Output Enable pin (OE) held LOW, R/W held HIGH and when chip is disabled (CE pin held HIGH).
Scope of Impact
Bus contention in shared bus architectures where data and control lines are shared. There is no impact of this issue in
standalone architectures where data and control lines are not shared.
Workaround
Solutions to prevent bus contention:
1. The OE signal should be held HIGH when CE is disabled. This will ensure the data lines are tri-stated.
2. The R/W signal can be LOW(write mode) when CE is disabled. This prevents the Dual Port RAM from driving the data lines.
Since CE is disabled, the memory is not corrupted.
If these workarounds are not suitable for your application, Cypress will provide fixed samples that do not exhibit the chip disable
issue. The timeline for this is mentioned in the Fix Status section.
Fix Status
This chip disable issue will be fixed in the new samples and will be available by early April 2012. Support for older parts
(CY7C131/131A/136/136A) will be continued until early April 2012.
Document Number: 001-64231 Rev. *E
Page 18 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Document History Page
Document Title: CY7C131E/CY7C131AE/CY7C136E/CY7C136AE, 1 K / 2 K × 8 Dual-port Static RAM
Document Number: 001-64231
Rev.
ECN No.
Orig. of
Change
Submission
Date
**
3038037
ADMU
09/24/2010
New data sheet
*A
3394800
ADMU
10/04/2011
Changed status from Preliminary to Final.
Updated Maximum Ratings (Removed (Pin 48 to Pin 24)).
Updated Electrical Characteristics (changed minimum value of IOZ parameter
from –10 µA to –20 µA, changed maximum value of IOZ parameter from
+10 µA to +20 µA and changed maximum value of ISB3 from 0.5 mA to 15 mA
for both Commercial and Industrial temperature ranges).
Updated Package Diagrams (Updated revision of 51-85004 from *B to *C and
revision of 51-85042 from *A to *C).
Updated in new template.
*B
3403147
ADMU
10/12/2011
No technical updates.
*C
3435230
ADMU
11/17/2011
Updated Features (Removed a feature “Expandable data bus width to 16 bits
or more using Master/Slave chip select when using more than one device.”
and updated another feature to read as “BUSY output flag to indicate access
to the same location by both ports.”.
Updated Functional Description (Updated the sentence in the first paragraph
to read as “The CY7C131E / CY7C131AE / CY7C136E / CY7C136AE can be
used as a standalone dual-port static RAM.”.
Updated Note 2 to read as “BUSY is a push-pull output. No pull-up resistor
required.”.
Updated Note 3 to read as “Interrupt: push-pull output. No pull-up resistor
required.”.
Updated Maximum Ratings (Removed “(per MIL-STD-883, Method 3015)”).
Updated Electrical Characteristics (Removed the Note “See the last page of
this specification for Group A subgroup testing information.” and its reference
in Parameter column.).
Updated Capacitance[10] (Changed maximum value of CIN parameter from 10
pF to 15 pF).
Updated AC Test Loads and Waveforms.
Updated Switching Characteristics (Removed the Note “See the last page of
this specification for Group A subgroup testing information.” and its reference
in Parameter column.).
Updated Switching Characteristics (Changed the minimum value of tOHA from
0 ns to 3 ns).
Removed the section “Typical DC and AC Characteristics”.
Removed the section “Reference Documents”.
*D
3620277
ADMU
06/15/2012
Added footnotes 9, 13, 17, 20, 36, 37, 39, 40, 41, and 42.
Missing overbars updated.
Removed “Slave Diagrams”.
Updated Figure 3 with value 5 ns.
Updated Maximum Ratings (updated Static discharge voltage from 2001 V to
1100 V).
Corrected the typo in Electrical Characteristics.
Updated Package Diagrams (51-85042 from Rev *C to *D).
Updated ICC parameters in Electrical Characteristics table.
Updated Typical Operating Current parameters in Selection Guide.
*E
3997575
ADMU
05/15/2013
Updated Package Diagrams:
spec 51-85004 – Changed revision from *C TO *D.
Description of Change
Added Appendix: Silicon Errata for CY7C131E/131AE/136E/136AE 1K/2K ×
8 Dual Port Static RAM.
Document Number: 001-64231 Rev. *E
Page 19 of 20
CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
Products
Automotive
Clocks & Buffers
Interface
Lighting & Power Control
PSoC Solutions
cypress.com/go/automotive
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psoc.cypress.com/solutions
cypress.com/go/interface
PSoC 1 | PSoC 3 | PSoC 5
cypress.com/go/powerpsoc
cypress.com/go/plc
Memory
Optical & Image Sensing
PSoC
Touch Sensing
cypress.com/go/memory
cypress.com/go/image
cypress.com/go/psoc
cypress.com/go/touch
USB Controllers
Wireless/RF
cypress.com/go/USB
cypress.com/go/wireless
© Cypress Semiconductor Corporation, 2010-2013. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-64231 Rev. *E
Revised May 15, 2013
All products and company names mentioned in this document may be the trademarks of their respective holders.
Page 20 of 20
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