Z ibo Seno Electronic Engineering Co., Ltd. DSK12 – DSK120 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! ! ! ! ! ! 1.4± 0.15 1.9± 0.1 Ideally Suited for Automatic Assembly SOD - 123FL Low Power Loss, High Efficiency Surge Overload Rating to 2 0A Peak Cathode Band Top View For Use in Low Voltage Application Guard Ring Die Construction Plastic Case Material has UL Flammability Classification Rating 94V-O 2.8 ± 0.1 Mechanical Data ! ! ! ! ! ! 1.0±0.2 Schottky Barrier Chip 0.10-0.30 ! 0.6±0.25 Case: SOD-123, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.01 grams (approx.) Lead Free: For RoHS / Lead Free Version 3.7±0.2 Dimensions in millimeters Maximum Ratings and Electrical Characteristics Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TL = 75°C DSK12 DSK13 @TA=25°C unless otherwise specified DSK14 DSK15 DSK16 DSK18 DSK110 DSK115 DSK120 Unit VRRM VRWM VR 20 30 40 50 60 80 100 150 200 V VR(RMS) 14 21 28 35 42 56 70 105 140 V IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 25 A @IF = 1.0A VFM @TA = 25°C @TA = 100°C IRM Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) 0.55 0.70 0.3 10 RJL RJA 0.85 0.95 V 0.2 5 0.1 2 mA 28 110 °C/W Typical Junction Capacitance Cj Operating Temperature Range Tj -65 to +125 °C TSTG -65 to +150 °C Storage Temperature Range 110 80 pF Note: 1. Mounted on P.C. Board with 5.0mm2 copper pad area. DSK12 – DSK120 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. 10 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) DSK12 – DSK120 1.0 0 25 50 100 75 125 150 18 - 120 0.1 Tj - 25ºC IF Pulse Width = 300 µs 0.01 1.2 1000 Single Half-Sine-Wave (JEDEC Method) Tj = 25°C f = 1 MHz Tj = 100°C 40 Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 0.8 VF, INSTANTANEOUS FWD VOLTAGE (V) Fig. 2 Typ. Forward Characteristics Fig. 1 Forward Current Derating Curve 30 20 10 0 0.4 0 TL , LEAD TEMPERATURE (ºC) 50 15 - 16 12 - 14 1.0 100 10 1 10 100 0.1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) 1 100 10 Tj = 100ºC 1.0 Tj = 75ºC 0.1 0.01 Tj = 25ºC 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DSK12 – DSK120 2 of 2 www.senocn.com Alldatasheet