EMT18 / UMT18N / IMT18 Transistors General purpose transistors (dual transistors) EMT18 / UMT18N / IMT18 0.22 EMT18 (3) (4) (5) (2) 1.2 1.6 (1) 0.5 0.13 (6) 0.5 0.5 1.0 1.6 zExternal dimensions (Unit : mm) zFeatures 1) Two 2SA2018 chips in a EMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. Each lead has same dimensions 1.3 0.65 (1) 1.25 2.0 (3) (2) (5) (6) 0.2 (4) UMT18N zStructure Epitaxial planar type NPN silicon transistor 0.65 Abbreviated symbol : T18 ROHM : EMT6 The following characteristics apply to both Tr1 and Tr2. 0.1Min. Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 (2) (1) (4) (5) (6) 2.9 (1) (6) (2) IMT18 (3) (3) (4) EMT18 / UMT18N (5) 0.3 IMT18 1.9 Abbreviated symbol : T18 0.95 0.95 zEquivalent circuit 0.9 0.7 0.15 2.1 1.6 (4) (5) (6) (3) 0.3Min. (2) ROHM : SMT6 EIAJ : SC-74 JEDEC : SOT-457 (1) 1.1 Tr1 Tr2 0.8 Tr1 Tr2 0.15 2.8 Each lead has same dimensions Abbreviated symbol : T18 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature Limits Symbol VCBO −15 VCEO −12 VEBO −6 IC −500 ∗1 ICP 1.0 EMT6 ∗2 150 (TOTAL) PC UMT6 SMT6 300 (TOTAL)∗3 Tj 150 Tstg −55 to +150 Unit V V V mA A mW °C °C ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. ∗3 200mW per element must not be exceeded. Rev.A 1/3 EMT18 / UMT18N / IMT18 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO −15 − − V IC= −10µA − − V IC= −1mA Collector-emitter breakdown voltage BVCEO −12 Emitter-base breakdown voltage BVEBO −6 − − V IE= −10µA Collector cutoff current ICBO − − −0.1 µA VCB= −15V Emitter cutoff current IEBO − − −0.1 µA VCB= −6V Collector-emitter saturation voltage VCE (sat) − −100 −250 mV IC / IB= −200mA / −10mA VCE= −2V, IC= −10mA DC current transfer ratio hFE 270 − 680 − Transition frequency fT − 260 − MHz VCE= −2V, IE=10mA, f=100MHz Output capacitance Cob − 6.5 − pF VCB= −10V, IE=0A, f=1MHz zPackaging specifications and hFE Package name Code Basic ordering unit (pieces) Type Taping TR 3000 − T2R 8000 EMT18 UMT18N IMT18 − − T110 3000 − − − zElectrical characteristic curves 1000 VCE=2V Ta=125°C Ta=25°C Ta= −40°C 100 50 20 10 5 2 1 0.5 1.0 1.5 200 Ta=125°C Ta=25°C Ta= −40°C 100 50 20 10 5 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded Emitter Propagation Characteristics 1 IC / IB=20 500 2 0 1000 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 200 VCE=2V 500 500 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) 1000 200 100 Ta=125°C Ta=25°C Ta= −40°C 50 20 10 5 2 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.2 DC Current Gain vs. Collector Current 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.3 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) Rev.A 2/3 EMT18 / UMT18N / IMT18 Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) 500 200 100 50 IC / IB=50 IC / IB=20 20 IC / IB=10 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) 1000 1000 IC / IB=20 500 Ta= −40°C Ta=25°C Ta=125°C 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.5 Base-Emitter Saturation Voltage vs.Collecter Current 1000 TRANSITION FREQUENCY : fT (MHz) 1000 BASER SATURATION VOLTAGE : VBE (sat) (mV) Transistors VCE=2V Ta=25°C 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 EMITTER CURRENT : IC (mA) Fig.6 Gain Bandwidth Product vs. Emitter Current IE=0A f=1MHz Ta=25°C 500 200 100 50 Cib 20 10 Cob 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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