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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P04PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P04PDG-E1-AY Note NP100P04PDG-E2-AY Note LEAD PLATING PACKING PACKAGE Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZP) Note Pb-free (This product does not contain Pb in external electrode.) FEATURES (TO-263) • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(DC) = m100 A ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −40 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) ID(DC) m100 A ID(pulse) m300 A PT1 200 W Total Power Dissipation (TA = 25°C) PT2 1.8 W Channel Temperature Tch 175 °C Tstg −55 to +175 °C Single Avalanche Current Note2 IAS 74 A Single Avalanche Energy Note2 EAS 550 mJ Storage Temperature Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 0.75 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18692EJ3V0DS00 (3rd edition) Date Published May 2007 NS CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2007 NP100P04PDG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −40 V, VGS = 0 V −10 μA Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m100 nA VGS(th) VDS = −10 V, ID = −1 mA −1.0 −1.6 −2.5 V | yfs | VDS = −10 V, ID = −50 A 43 88 RDS(on)1 VGS = −10 V, ID = −50 A 2.8 3.5 mΩ RDS(on)2 VGS = −4.5 V, ID = −50 A 3.4 5.1 mΩ Input Capacitance Ciss VDS = −10 V, 15100 pF Output Capacitance Coss VGS = 0 V, 2400 pF Reverse Transfer Capacitance Crss f = 1 MHz 1130 pF Turn-on Delay Time td(on) VDD = −20 V, ID = −45 A, 38 ns Rise Time tr VGS = −10 V, 30 ns Turn-off Delay Time td(off) RG = 0 Ω 300 ns Fall Time tf 100 ns Total Gate Charge QG VDD = −32 V, 320 nC Gate to Source Charge QGS VGS = −10 V, 37 nC QGD ID = −100 A 85 nC VF(S-D) IF = −100 A, VGS = 0 V 0.91 Reverse Recovery Time trr IF = −100 A, VGS = 0 V, 70 ns Reverse Recovery Charge Qrr di/dt = −100 A/μs 123 nC Gate to Source Threshold Voltage Note Forward Transfer Admittance Drain to Source On-state Resistance Note Gate to Drain Charge Body Diode Forward Voltage Note S 1.5 V Note Pulsed test PW ≤ 350 μs, Duty Cycle ≤ 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL 50 Ω PG. VGS = −20 → 0 V VDD RG PG. VGS(−) VGS Wave Form 0 VGS 10% 90% VDD VDS(−) − IAS BVDSS VDS ID VGS(−) 0 VDS Wave Form τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. PG. 2 IG = −2 mA RL 50 Ω VDD Data Sheet D18692EJ3V0DS VDS 90% 90% 10% 10% 0 td(on) tr td(off) ton tf toff NP100P04PDG TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 240 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 200 160 120 80 40 0 0 0 25 50 75 100 125 150 175 200 0 25 Tch - Channel Temperature - °C 50 75 100 125 150 175 200 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA -1000 ID(pulse) PW =1 00 1i m i DC s 1i 0 RDS(on) Limited (VGS = −10 V) μs ms i D er -10 ID(DC) w Po ip i ss io at -1 d it e im nL TC = 25°C Single Pulse -0.1 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A i -100 1000 100 Rth(ch-A) = 83.3°C/Wi 10 1 Rth(ch-C) = 0.75°C/Wi 0.1 0.01 Single Pulse 0.001 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18692EJ3V0DS 3 NP100P04PDG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -300 -1000 VGS = −10 V -200 VDS = −10 V Pulsed -100 ID - Drain Current - A ID - Drain Current - A -250 −4.5 V -150 -100 -50 -10 Tch = −55°C −25°C 25°C 75°C 125°C 150°C 175°C -1 -0.1 -0.01 Pulsed 0 -0.001 -0.5 -1 -1.5 -2 0 -1 -4 -5 GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT -3 -2.5 -2 -1.5 -1 VDS = −10 V ID = −1 mA -0.5 0 -75 -25 25 75 125 175 225 1000 125°C 150°C 175°C 100 10 1 VDS = −10 V Pulsed 0.1 -0.1 -1 5 VGS = −4.5 V 3 −10 V 2 1 Pulsed 0 -1 -10 -100 -10 -100 -1000 -1000 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 6 4 Tch = −55°C −25°C 25°C 75°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ -3 VGS - Gate to Source Voltage - V Tch - Channel Temperature - °C ID - Drain Current - A 4 -2 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V 0 10 8 ID = −100 A −50 A −20 A 6 4 2 Pulsed 0 0 -5 -10 -15 VGS - Gate to Source Voltage - V Data Sheet D18692EJ3V0DS -20 NP100P04PDG CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 8 100000 VGS = −4.5 V 4 −10 V 2 ID = −50 A Pulsed Ciss 10000 Coss 1000 VGS = 0 V f = 1 MHz 0 -75 -25 25 75 125 175 Crss 100 -0.1 225 SWITCHING CHARACTERISTICS -100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS -40 1000 VDS - Drain to Source Voltage - V 10000 td(on), tr, td(off), tf - Switching Time - ns -10 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C td(off) tf 100 td(on) tr 10 VDD = −20 V VGS = −10 V RG = 0 Ω 1 -0.1 -1 -12 VDD = −32 V −20 V −8 V -30 -9 -20 -6 VGS -10 -3 VDS ID = −100 A 0 -10 -100 -1000 0 50 ID - Drain Current - A 100 150 200 250 300 0 350 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 -100 VGS = −10 V -10 0V -1 -0.1 Pulsed trr - Reverse Recovery Time - ns -1000 IF - Diode Forward Current - A -1 100 10 -0.01 di/dt = −100 A/μs VGS = 0 V 1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V Data Sheet D18692EJ3V0DS -0.1 -1 -10 -100 IF - Diode Forward Current - A 5 VGS - Gate to Source Voltage - V 6 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE NP100P04PDG PACKAGE DRAWING (Unit: mm) 1.35 ±0.3 TO-263 (MP-25ZP) 10.0 ±0.3 No plating 7.88 MIN. 4.45 ±0.2 1.3 ±0.2 9.15 ±0.3 0.5 15.25 ±0.5 8.0 TYP. 4 0.025 to 0.25 .2 0 to 8 ˚ 0.25 1 2 3 2.5 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) 2.54 ±0.25 0.6 ±0 0.75 ±0.2 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D18692EJ3V0DS NP100P04PDG • The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1