PHILIPS BYV40E Rectifier diodes ultrafast, rugged Datasheet

Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV40E series
FEATURES
SYMBOL
QUICK REFERENCE DATA
VR = 150 V/ 200 V
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• low profile surface mounting
package
VF ≤ 0.7 V
a2
3
a1
1
IO(AV) = 1.5 A
k 2
IRRM = 0.1 A
trr ≤ 25 ns
GENERAL DESCRIPTION
PINNING
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
PIN
The BYV40E series is supplied in
the SOT223 surface mounting
package.
SOT223
DESCRIPTION
1
anode 1
2
cathode
3
anode 2
tab
cathode
4
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VRRM
VRWM
VR
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
IO(AV)
Average rectified output current
(both diodes conducting)1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
CONDITIONS
MIN.
BYV40E
IFRM
IFSM
IRRM
IRSM
Tstg
Tj
Tsp ≤ 120˚C
square wave; δ = 0.5;
Tsp ≤ 132˚C
t = 25 µs; δ = 0.5;
Tsp ≤ 132 ˚C
tp = 10 ms
tp = 8.3 ms
sinusoidal; Tj = 150˚C prior
to surge; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001
per diode
Non-repetitive peak reverse
tp = 100 µs
current per diode
Storage temperature
Operating junction temperature
-
MAX.
-150
150
150
150
UNIT
-200
200
200
200
V
V
V
-
1.5
A
-
1.5
A
-
6
6.6
A
A
-
0.1
A
-
0.1
A
-65
-
150
150
˚C
˚C
1 Neglecting switching and reverse current losses
September 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV40E series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
MAX.
UNIT
-
8
kV
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-sp
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
Rth j-a
MIN.
TYP.
MAX.
UNIT
one or both diodes conducting
-
-
15
K/W
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:11
-
156
70
-
K/W
K/W
MIN.
TYP.
MAX.
UNIT
-
0.50
0.82
100
5
-
0.7
1.0
300
10
11
25
V
V
µA
µA
nC
ns
-
10
3
20
-
ns
V
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Qs
trr1
Reverse recovery charge
Reverse recovery time
trr2
Vfr
Reverse recovery time
Forward recovery voltage
IF = 0.5 A; Tj = 150˚C
IF = 1.5 A
VR = VRWM; Tj = 100 ˚C
VR = VRWM
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
IF = 2 A; dIF/dt = 20 A/µs
September 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
I
dI
F
BYV40E series
0.5A
F
dt
IF
t
0A
rr
time
Q
10%
s
I rec = 0.25A
IR
100%
trr2
I
I
R
rrm
I = 1A
R
Fig.1. Definition of trr1, Qs and Irrm
I
Fig.4. Definition of trr2
PF / W
1
F
Tsp(max) / C
BYV40
135
Vo = 0.66 V
Rs = 0.08 Ohms
D = 1.0
0.8
138
0.5
0.6
141
time
0.2
VF
0.4
144
0.1
I
V
tp
D=
T
tp
0.2
fr
0
0
0.2
0.4
0.6
0.8
IF(AV) / A
time
Fig.2. Definition of Vfr
1
0.7
PF / W
150
1.4
Tsp(max) / C
BYV40
Vo = 0.66 V
Rs = 0.08 Ohms
0.6
a = 1.57
0.5
D.U.T.
139.5
141
142.5
1.9
2.2
Voltage Pulse Source
0.4
to ’scope
145.5
4
0.2
147
0.1
148.5
0
Fig.3. Circuit schematic for trr2
144
2.8
0.3
September 1998
1.2
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
R
Current
shunt
t
T
VF
147
0
0.1
0.2
0.3
0.4
0.5
IF(AV) / A
0.6
0.7
150
0.8
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV40E series
Qs / nC
trr / ns
1000
100
IF = 2A
100
IF=2A
1A
10
IF=1A
10
1
1
10
dIF/dt (A/us)
1
100
1
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
10
dIF/dt(A/us)
100
Fig.9. Maximum Qs at Tj = 25 ˚C; per diode
IF / A
100
3
Transient thermal impedance, Zth j-sp (K/W)
Tj=25C
10
Tj=150C
2
1
TYP
MAX
1
PD
0.1
0
0
0.5
VF / V
1.0
0.01
1us
1.5
Fig.8. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
September 1998
tp
D=
T
10us
100us 1ms
10ms
pulse width, tp (s)
100ms
tp
T
t
1s
10s
BYV40E
Fig.10. Transient thermal impedance; per diode;
Zth j-sp = f(tp).
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV40E series
MECHANICAL DATA
Dimensions in mm
6.7
6.3
Net Mass: 0.11 g
B
3.1
2.9
0.32
0.24
0.2
4
A
A
0.10
0.02
16
max
M
7.3
6.7
3.7
3.3
13
2
1
10
max
1.8
max
1.05
0.80
2.3
0.60
0.85
4.6
3
0.1 M
B
(4x)
Fig.11. SOT223 surface mounting package.
Notes
1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines".
Order code: 9397 750 00505.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
5
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV40E series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
6
Rev 1.300
Similar pages