MDU1532S Single N-channel Trench MOSFET 30V General Description Features The MDU1532S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1532S is suitable device for DC/DC Converter and general purpose applications. D D D D D D D D S S S G G S S S VDS = 30V ID = 32A @VGS = 10V RDS(ON) < 4.2 mΩ @VGS = 10V < 5.3 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested SBD Built In D G S PDFN56 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V VGSS ±20 V o TC=25 C (Silicon Limited) TC=25oC (Package Limited) Continuous Drain Current (1) o TA=25 C 105 ID o TA=70 C 29.5 A 23.7 Pulsed Drain Current IDM o TC=25 C Power Dissipation 32 PD o TA=25 C Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range 128 69 W 5.5 EAS 20 TJ, Tstg -55~150 Symbol Rating RθJA 22.7 RθJC 1.8 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Aug. 2014. Ver. 0.1 1 Unit o C/W MagnaChip Semiconductor Ltd. MDU1532S – Single N-Channel Trench MOSFET 30V 7.9 Part Number Temp. Range Package Packing RoHS Status MDU1532SURH -55~150oC PDFN56 Tape & Reel Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ. Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 10mA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 1.8 3.0 - 0.5 mA nA V Drain Cut-Off Current IDSS VDS = 24V, VGS = 0V - Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±100 VGS = 10V, ID = 20A - 3.6 4.2 VGS = 4.5V, ID = 20A - 4.5 5.3 VDS = 5V, ID = 20A - 85 - - 42.1 58 18.0 25 8.4 - Drain-Source ON Resistance Forward Trans conductance RDS(ON) gfs mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs VDD = 15V, ID = 20A, VGS = 10V nC - Gate-Drain Charge Qgd - 3.6 - Input Capacitance Ciss - 2900 - - 89 - Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 910 - Turn-On Delay Time td(on) - 14.4 - - 12.3 - - 43.2 - Rise Time Turn-Off Delay Time Fall Time Gate Resistance tr td(off) VGS = 10V, VDS = 15.0V, ID = 20A, RG = 3Ω tf Rg f=1 MHz VSD IS = 1A, VGS = 0V pF ns - 7.1 - 0.5 1.1 1.5 Ω - 0.4 1.0 V - 43 - ns - 48 - nC Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = 20A, dl/dt = 100A/μs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited 2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 20 A, VDD = 27V, VGS = 10V. Aug. 2014. Ver. 0.1 2 MagnaChip Semiconductor Ltd. MDU1532S – Single N-Channel Trench MOSFET 30V Ordering Information 8.0V 6.0V 4.5V 4.0V 40 ID, Drain Current [A] Drain-Source On-Resistance [mΩ] VGS = 10V 30 20 3.0V 10 8 6 VGS = 4.5V 4 VGS = 10V 2 0 0 0.0 0.2 0.4 0.6 0.8 0 1.0 10 20 40 1.8 50 ※ Notes : ※ Notes : 1. VGS = 10 V 2. ID = 20 A ID = 20.0A RDS(ON) [mΩ ], Drain-Source On-Resistance 1.6 50 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics RDS(ON), (Normalized) Drain-Source On-Resistance 30 ID, Drain Current [A] VDS, Drain-Source Voltage [V] 1.4 1.2 1.0 40 30 20 10 0.8 0 0.6 -50 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 30 ※ Notes : ※ Notes : VGS = 0V VDS = 5V IDR, Reverse Drain Current [A] ID, Drain Current [A] 25 20 15 10 10 1 5 0.1 0.0 0 0 2 4 6 Fig.5 Transfer Characteristics Aug. 2014. Ver. 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDU1532S – Single N-Channel Trench MOSFET 30V 10 50 5000 ※ Note : ID = 20A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 15V 4000 Capacitance [pF] VGS, Gate-Source Voltage [V] 8 6 4 Ciss 3000 2000 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 2 1000 0 0 Crss 0 10 20 30 40 0 50 5 10 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 10 15 20 25 30 VDS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics 3 140 120 2 ID, Drain Current [A] ID, Drain Current [A] 10 10 ms 10 10 100 ms 1 Operation in This Area is Limited by R DS(on) DC 1s 10 s 100 s 0 100 80 60 40 Limited by Package Single Pulse TJ=Max Rated TC=25 20 ℃ 10 -1 10 -1 10 0 10 1 10 0 25 2 VDS, Drain-Source Voltage [V] 50 75 100 125 150 TC, Case Temperature [ ] ℃ Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 0 10 D=0.5 0.2 0.1 -1 10 0.05 0.02 0.01 Zθ JC (t), Thermal Response 10 -2 ※ Notes : 10 Duty Factor, D=t 1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC single pulse -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Aug. 2014. Ver. 0.1 4 MagnaChip Semiconductor Ltd. MDU1532S – Single N-Channel Trench MOSFET 30V 10 PDFN56 (5x6mm) Dimensions are in millimeters, unless otherwise specified Dimension MILLIMETERS Min Max A 0.90 1.10 b 0.33 0.51 C 0.20 0.34 D1 4.50 5.10 D2 - 4.22 E 5.90 6.30 E1 5.50 6.10 E2 - 4.30 e Aug. 2014. Ver. 0.1 5 1.27BSC H 0.41 0.71 K 0.20 - L 0.51 0.71 α 0° 12° MagnaChip Semiconductor Ltd. MDU1532S – Single N-Channel Trench MOSFET 30V Package Dimension MDU1532S – Single N-Channel Trench MOSFET 30V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Aug. 2014. Ver. 0.1 6 MagnaChip Semiconductor Ltd.