MOSFET SMD Type P-Channel MOSFET AO6405-HF (KO6405-HF) ( SOT-23-6 ) Unit: mm +0.1 ● VDS (V) =-30V 6 5 4 1 2 3 +0.2 1.6 -0.1 ● ID =-5 A (VGS =-10V) ● RDS(ON) ＜ 87mΩ (VGS =-4.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a 0.55 ● RDS(ON) ＜ 52mΩ (VGS =-10V) +0.2 2.8 -0.1 ■ Features 0.4 0.4 -0.1 +0.02 0.15 -0.02 +0.01 -0.01 Pb−Free Lead Finish +0.2 -0.1 0-0.1 G +0.1 0.68 -0.1 +0.1 1.1 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead ID IDM TA=25°C TA=70°C t ≤ 10s Steady-State PD RthJA RthJL Unit V -5 -4.2 A -20 2 1.3 W 62.5 110 ℃/W 50 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO6405-HF (KO6405-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(On) Test Conditions ID=-250μA, VGS=0V Min Typ -30 -1 VDS=-30V, VGS=0V, TJ=55℃ -5 VDS=0V, VGS=±20V VDS=VGS , ID=-250μA Forward Transconductance ID(ON) -1.4 gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) VDS=-5V, ID=-5A 10 65 VGS=0V, VDS=0V, f=1MHz 3.5 VGS=-10V, VDS=-15V, ID=-5A 11.5 9.2 11 4.6 6 1.6 td(on) 7.5 VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω tf 7 trr 11 Body Diode Reverse Recovery Charge Qrr IS IS=-1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. Marking D5** F www.kexin.com.cn nC ns 19 Turn-Off Fall Time IF=-5A, dI/dt=100A/μs Ω 5.5 Body Diode Reverse Recovery Time ■ Marking pF 100 Turn-On DelayTime VSD S 520 VGS=0V, VDS=-15V, f=1MHz 2.2 Maximum Body-Diode Continuous Current 2 A Qgd Diode Forward Voltage mΩ 87 -20 Gate Drain Charge tr V 70 Qgs td(off) -2.4 VGS=-10V, ID=-5A TJ=125℃ Gate Source Charge Turn-Off DelayTime nA 52 Qg Turn-On Rise Time uA ±100 VGS=-10V, ID=-5A VGS=-10V, VDS=-5V Unit V VDS=-30V, VGS=0V VGS=-4.5V, ID=-4A On state drain current Max 5.3 nC -2.5 A -1 V MOSFET SMD Type P-Channel MOSFET AO6405-HF (KO6405-HF) ■ Typical Characterisitics 30 30 -6V -10V -4.5V -ID (A) 20 20 15 -4V 10 5 15 10 25°C 125°C 5 VGS=-3.5V 0 0 0 1 2 3 4 0.5 5 1.5 2.5 3.5 4.5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 80 1.8 Normalized On-Resistance 70 VGS=-4.5V 60 RDS(ON) (mΩ Ω) VDS=-5V 25 -ID(A) 25 50 40 30 VGS=-10V 20 VGS=-10V ID=-5A 1.6 1.4 1.2 VGS=-4.5V ID=-4A 1 0.8 10 0 2 0 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 120 ID=-5A 1.0E+01 100 80 125°C 60 -IS (A) RDS(ON) (mΩ Ω) 1.0E+00 1.0E-01 125°C 1.0E-02 25°C 1.0E-03 40 25°C 1.0E-04 1.0E-05 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO6405-HF (KO6405-HF) ■ Typical Characterisitics 10 800 VDS=-15V ID=-5A Ciss 600 Capacitance (pF) -VGS (Volts) 8 6 4 400 Coss 200 2 0 Crss 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 40 100.0 TA=25°C 10µs RDS(ON) limited 100µs 1ms 1.0 10ms 10ms 0.1 30 Power (W) ID (Amps) 10.0 100ms 10s TJ(Max)=150°C TA=25°C 10 DC 0.0 0.01 0.1 1 VDS (Volts) 10 0 100 0.0001 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) . Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 20 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=110°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 www.kexin.com.cn 100 1000