FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature BVCEO > 60V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance 500mW Power Dissipation hFE Characterized up to 2A for High Current Gain Hold Up Complementary PNP Type: FMMT591Q Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT23 Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight 0.008 grams (Approximate) C E C B B E Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Part Number FMMT491QTA FMMT491QTC Notes: Compliance Automotive Automotive Marking 491 491 Reel Size (inches) 7 13 Tape Width (mm) 8 8 Quantity per Reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 491 FMMT491Q Document number: DS37009 Rev. 2 - 2 491 = Product Type Marking Code 1 of 7 www.diodes.com August 2016 © Diodes Incorporated FMMT491Q Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Collector-Base Voltage Characteristic VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V IC 1 A Continuous Collector Current Peak Pulse Current ICM 2 A IB 200 mA Symbol Value Unit PD 500 mW Thermal Resistance, Junction to Ambient (Note 6) RθJA 250 °C/W Thermal Resistance, Junction to Lead (Note 7) RθJL 197 °C/W TJ, TSTG -55 to +150 °C Base Current Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 6) Operating and Storage Temperature Range ESD Ratings (Note 8) Characteristic Electrostatic Discharge – Human Body Model Electrostatic Discharge – Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 6. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FMMT491Q Document number: DS37009 Rev. 2 - 2 2 of 7 www.diodes.com August 2016 © Diodes Incorporated FMMT491Q Thermal Characteristics and Derating Information 15 x 15mm FR4 1oz Copper 200 160 D=0.5 120 80 D=0.2 Single Pulse 40 0 100µ D=0.05 D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) Max Power Dissipation (W) Thermal Resistance (°C/W) 0.6 240 Max Power Dissipation (W) Transient Thermal Impedance 15 x 15mm FR4 1oz Copper 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 15 x 15mm FR4 1oz Copper 100 10 1 0.1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation FMMT491Q Document number: DS37009 Rev. 2 - 2 3 of 7 www.diodes.com August 2016 © Diodes Incorporated FMMT491Q Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic BVCBO 80 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 9) BVCEO 60 — — V IC = 10mA Emitter-Base Breakdown Voltage BVEBO 7 8.1 — V IE = 100µA Collector Cutoff Current ICBO — <1 100 nA VCB = 60V Emitter Cutoff Current IEBO — <1 100 nA VEB = 5.6V Collector Emitter Cutoff Current ICES nA VCE = 60V, VCES = 60V Static Forward Current Transfer Ratio (Note 9) Collector-Emitter Saturation Voltage (Note 9) hFE VCE(SAT) — <1 100 100 140 — 100 150 300 80 120 — 30 40 — — 100 150 — 160 250 Test Condition IC = 1mA, VCE = 5V — IC = 500mA, VCE = 5V IC = 1A, VCE = 5V IC = 2A, VCE = 5V mV IC = 500mA, IB = 50mA IC = 1A, IB = 100mA Base-Emitter Turn-On Voltage (Note 9) VBE(ON) — 830 1,000 mV IC = 1A, VCE = 5V Base-Emitter Saturation Voltage (Note 9) VBE(SAT) — 965 1,100 mV IC = 1A, IB = 100mA Output Capacitance COBO — — 10 pF VCB = 10V, f = 1MHz Transition Frequency fT 150 — — MHz Note: VCE = 10V, IC = 50mA, f = 100MHz 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. FMMT491Q Document number: DS37009 Rev. 2 - 2 4 of 7 www.diodes.com August 2016 © Diodes Incorporated FMMT491Q Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 1 0.7 Tamb=25°C 0.6 IC/IB=100 VCE(SAT) (V) VCE(SAT) (V) IC/IB=50 100m 0.4 1 IC Collector Current (A) 0.3 0.2 25°C 0.0 10m 10 VCE=5V 300 150°C -55°C 100m 1.2 IC/IB=10 -55°C 1.2 100°C 200 1.0 25°C 0.8 150 0.6 100 -55°C 0.4 50 0.2 0.0 1m 10m 100m 1.0 VBE(SAT) (V) 250 Typical Gain (hFE) 1.4 Normalised Gain 1 IC Collector Current (A) VCE(SAT) v IC VCE(SAT) v IC 1.6 100°C 0.1 IC/IB=10 10m 150°C 0.5 100m 10m 1m IC/IB=10 0.8 0.6 100°C 150°C 0.4 0 1 25°C IC Collector Current (A) hFE v IC 1m 10m 100m IC Collector Current (A) 1 VBE(SAT) v IC 1.2 VCE=5V -55°C 1.0 VBE(ON) (V) 25°C 0.8 0.6 100°C 0.4 150°C 0.2 1m 10m 100m IC Collector Current (A) 1 VBE(ON) v IC FMMT491Q Document number: DS37009 Rev. 2 - 2 5 of 7 www.diodes.com August 2016 © Diodes Incorporated FMMT491Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° – All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X FMMT491Q Document number: DS37009 Rev. 2 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com August 2016 © Diodes Incorporated FMMT491Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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