DATA SHEET BCW65A SEMICONDUCTOR General Purpose Transistors H NPN Silicon Featrues Pb-Free Package is Available. SOT–23 (TO–236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 32 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V EBO 5.0 Vdc IC 800 mAdc Collector Current — Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Symbol Max Unit PD 225 mW 1.8 mW/°C RθJA 556 °C/W PD 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C 3 COLLECTOR 1 Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature RθJA TJ , Tstg BASE 2 EMITTER DEVICE MARKING BCW65A = EA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V (BR)CEO 32 — — Vdc V (BR)CES 60 — — Vdc V 5.0 — — Vdc (VCE = 32 Vdc, IE = 0 ) — — 20 nAdc (VCE = 32 Vdc, IE = 0 , TA = 150°C) — — 20 µAdc — — 20 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10mAdc, I B= 0 ) Collector–Emitter Breakdown Voltage (IC = 10 µAdc, V EB = 0 ) Emitter–Base Breakdown Voltage (I E= 10 µAdc, I C = 0) Collector Cutoff Current (BR)EBO I CES Emitter Cutoff Current (V EB= 4.0 Vdc, I C = 0) I EBO 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. http://www.yeashin.com 1 REV.02 20120705 DEVICE CHARACTERISTICS BCW65A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit 35 75 — — — 220 100 — 250 35 — — — — 0.7 0.3 — — — — 2.0 fT 100 — — MHz Output Capacitance (V CB= 10 Vdc, I E = 0, f = 1.0 MHz) C obo — — 12 pF Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) C ibo — — 80 pF Noise Figure NF (V CE = 5.0 Vdc, I C = 0.2 mAdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) — — 10 dB t on — — 100 ns t off — — 400 ns ON CHARACTERISTICS DC Current Gain ( IC= 100 µAdc, VCE = 10 Vdc ) ( IC= 10 mAdc, VCE = 1.0 Vdc ) ( IC= 100 mAdc, VCE = 1.0 Vdc ) ( IC= 500 mAdc, VCE = 2.0 Vdc ) hFE Collector–Emitter Saturation Voltage ( IC = 500 mAdc, IB = 50 mAdc ) ( IC = 100 mAdc, IB = 10 mAdc ) Base–Emitter Saturation Voltage ( IC = 500 mAdc, IB = 50 mAdc ) — Vdc V CE(sat) V Vdc BE(sat) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 20mAdc, V CE = 10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn–On Time (I B1= I B2= 15 mAdc) Turn–Off Time (I C= 150 mAdc, R L = 150 Ω ) Ordering Information Device BCW65A http://www.yeashin.com Marking Shipping EA 3000/Tape&Reel 2 REV.02 20120705 PACKAGE OUTLINE & DIMENSIONS BCW65A SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S A B C D G H J K L S V G C D H K MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 J INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 http://www.yeashin.com inches mm 3 REV.02 20120705