Comset BCY58 Silicon planar epitaxial transistor Datasheet

NPN BCY58 – BCY59
SILICON PLANAR EPITAXIAL TRANSISTORS
The BCY58 and BCY59 are NPN transistors mounted in TO-18 metal package with the
collector connected to the case .
They are designed for use in audio drive and low-noise input stages.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage(1)
VCES
Collector-Emitter Voltage (VBE =0)
VEBO
Emitter-Base Voltage
IC
Collector Current
IB
Base Current
PD
PD
Total Power
Dissipation
Total Power
Dissipation
@ Tamb = 45°
@ Tcase= 45°
TJ
Junction Temperature
TStg
Storage Temperature range
Value
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
Unit
45
32
45
32
7
7
V
200
mA
50
mA
0.39
mW
1
Watts
200
°C
-65 to +150
°C
Value
Unit
V
V
(1) Applicable up to IC = 500mA
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
Thermal Resistance, Junction to mounting base
450
°C/W
RthJ-c
Thermal Resistance, Junction to ambient in free air
150
°C/W
COMSET SEMICONDUCTORS
1/4
NPN BCY58 – BCY59
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specifie
Symbol
ICES
ICES
IEBO
VCEO
VEBO
VCE(SAT)
VBE(SAT)
VBE
Ratings
Collector Cutoff
Current
Collector Cutoff
Current
Test Condition(s)
VCB =45 V
VBE =0V
VCB =32 V
VB =0V
VCB =45 V
VBE =0V,Tamb =150°C
VCB =32 V, VBE =0
Tamb =150°C
Symbol
Ratings
IC =10 µA, VCE =5 V
hFE
DC Current Gain
IC =10 µA, VCE =5 V
IC =10 mA, VCE =1 V
hfe
Small-Signal
Current Gain
18/10/2012
IC =100 mA, VCE =1V
IC =2 mA, VCE =5 V,
f = 1kHz
Max
Unit
-
-
10
nA
-
-
10
µA
-
-
10
nA
45
32
-
-
V
7
-
-
V
-
0.12
0.25
-
04
08
0.6
0.7
0.85
0.7
0.85
1.2
-
0.5
-
0.2
-
-
0.55
-
0.7
-
0.7
-
-
0.76
-
BCY58
BCY59
BCY58
VBE =5.0 VIC =0
Test
Condition(s)
Typ
BCY59
BCY59
BCY58
BCY59
IC =2 mA, IB =0
BCY58
BCY59
IE =1µA, IC =0
BCY58
BCY59
IC =10 mA
IB =0.25 mA
BCY58
Collector-Emitter
saturation Voltage
BCY59
IC =100 mA
IB =2.5 mA
BCY58
BCY59
IC =10 mA
IB =0.25 mA
BCY58
Base-Emitter
Saturation Voltage
BCY59
IC =100 mA
IB =2.5 mA
BCY58
BCY59
IC =10 µA, VCE =5 V
BCY58
BCY59
VCE =VCE max
IC =20 µA, Tj =100°C BCY58
BCY59
Base-Emitter Voltage IC =2 mA, VCE =5 V
BCY58
BCY59
IC =10 mA, VCE =1 V
BCY58
BCY59
IC =100 mA, VCE =1 V
BCY58
Emitter Cutoff
Current
Collector Emitter
Breakdown Voltage
Emitter Base
Breakdown Voltage
Min
BCY59VII
BCY58VII
Typ.20
>120
<220
>80
>40
>125
<250
COMSET SEMICONDUCTORS
V
BCY59VIII
BCY58VIII
>20
Typ.95
>180
<310
>120
<400
>45
>175
<350
V
BCY59IX BCY59X
BCY58IX BCY58X
>40
>60
Typ.190 Typ.300
>250
>380
<460
<630
>160
>240
<630
<1000
>60
>60
>250
>350
<500
<700
2/4
NPN BCY58 – BCY59
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specifie
Symbol
Ratings
Transition
frequency
Noise figure ,
RS=2kΩ
fT
F
td
Delay time
tr
Rise time
ton
Turn on time
ts
Storage time
tf
Fall time
toff
Turn off time
td
Delay time
tr
Rise time
ton
Turn on time
ts
Storage time
tf
Fall time
toff
Turn off time
CC
Collector
capacitance
CE
Test Condition(s)
IC =10 mA, VCE =5 V
f = 100MHz
IC =200 µA, VCE =5 V
f = 1kHz, B =200Hz
IC=10 mA , IB =1 mA
-IBM =1 mA, VBB=3.6 V
R1= R2 = 5kΩ
RL= 990 Ω
IC=100 mA , IB =10 mA
-IBM =10 mA, VBB =5 V
R1 = 500Ω , R1 = 700Ω
RL= 990 Ω
IE = Ie = 0 ,VCB =10 V
f = 1MHz
I = I = 0 ,VEB =0.5 V
Emitter capacitance C c
f = 1MHz
18/10/2012
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
COMSET SEMICONDUCTORS
Min
Typ
Mx
Unit
150
-
-
MHz
-
2
6
db
-
35
-
-
50
-
-
85
150
-
400
-
-
80
-
-
480
800
-
5
-
-
50
-
-
55
150
-
250
-
-
200
-
-
450
800
-
-
5
pF
-
-
15
pF
ns
ns
3/4
NPN BCY58 – BCY59
MECHANICAL DATA CASE TO-18
DIMENSIONS (mm)
min
A
B
C
D
E
F
G
H
I
L
max
12.7
0.9
2.54
45°
Pin 1 :
Pin 2 :
Pin 3 :
Case :
0.49
5.3
4.9
5.8
1.2
1.16
-
emitter
base
Collector
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
18/10/2012
[email protected]
COMSET SEMICONDUCTORS
4/4
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