ESMT M14D5121632A 8m x 16 bit x 4 banks ddr ii sdram Datasheet

ESMT
M14D5121632A
DDR II SDRAM
8M x 16 Bit x 4 Banks
DDR II SDRAM
Features
z
JEDEC Standard
z
VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V
z
Internal pipelined double-data-rate architecture; two data access per clock cycle
z
Bi-directional differential data strobe (DQS, /DQS); /DQS can be disabled for single-ended data strobe operation.
z
On-chip DLL
z
Differential clock inputs (CLK and CLK )
z
DLL aligns DQ and DQS transition with CLK transition
z
Quad bank operation
z
CAS Latency : 3, 4, 5, 6
z
Additive Latency: 0, 1, 2, 3, 4
z
Burst Type : Sequential and Interleave
z
Burst Length : 4, 8
z
All inputs except data & DM are sampled at the rising edge of the system clock(CLK)
z
Data I/O transitions on both edges of data strobe (DQS)
z
DQS is edge-aligned with data for READ; center-aligned with data for WRITE
z
Data mask (DM) for write masking only
z
Off-Chip-Driver (OCD) impedance adjustment
z
On-Die-Termination for better signal quality
z
Special function support
-
50/ 75/ 150 ohm ODT
-
High Temperature Self refresh rate enable
z
Auto & Self refresh
z
Refresh cycle :
-
8192 cycles/64ms (7.8μs refresh interval) at 0 ℃ ≦ TC ≦ +85 ℃
-
8192 cycles/32ms (3.9μs refresh interval) at +85 ℃ ＜ TC ≦ +95 ℃
z
SSTL_18 interface
z
84-ball BGA package
Ordering Information:
PRODUCT NO.
MAX FREQ
VDD
M14D5121632A -2.5BG
400MHz
1.8V
M14D5121632A -3BG
333MHz
1.8V
Elite Semiconductor Memory Technology Inc.
Data rate
(CL-tRCD-tRP)
PACKAGE
COMMENTS
BGA
Pb-free
DDR2-800 (5-5-5)
DDR2-800 (6-6-6)
DDR2-667 (5-5-5)
Publication Date : Feb. 2009
Revision : 1.1
1/59
ESMT
M14D5121632A
Functional Block Diagram
Clock
Generator
Bank D
Bank C
Bank B
Mode Register &
Extended Mode
Register
Row
Address
Buffer
&
Refresh
Counter
Bank A
DQS, DQS
CAS
WE
Column
Address
Buffer
&
Refresh
Counter
Column Decoder
Data Control Circuit
CLK, CLK
Elite Semiconductor Memory Technology Inc.
DM
Latch Circuit
RAS
Control Logic
CS
Command Decoder
Sense Amplifier
DLL
Input & Output
Buffer
Address
Row Decoder
CLK
CLK
CKE
DQ
ODT
Publication Date : Feb. 2009
Revision : 1.1
2/59
ESMT
M14D5121632A
Pin Arrangement
84 Ball BGA (Top View)
1
2
3
7
8
9
A
VDD
NC
VSS
VSSQ
UDQS
VDDQ
B
DQ14
VSSQ
UDM
UDQS
VSSQ
DQ15
C
VDDQ
DQ9
VDDQ
VDDQ
DQ8
VDDQ
D
DQ12
VSSQ
DQ11
DQ10
VSSQ
DQ13
E
VDD
NC
VSS
VSSQ
LDQS
VDDQ
F
DQ6
VSSQ
LDM
LDQS
VSSQ
DQ7
G
VDDQ
DQ1
VDDQ
VDDQ
DQ0
VDDQ
H
DQ4
VSSQ
DQ3
DQ2
VSSQ
DQ5
J
VDDL
VREF
VSS
VSSDL
CLK
VDD
CKE
WE
RAS
CLK
ODT
BA0
BA1
CAS
CS
A10
A1
A2
A0
A3
A5
A6
A4
A7
A9
A11
A8
A12
NC
NC
NC
K
L
NC
M
N
VSS
P
R
VDD
Elite Semiconductor Memory Technology Inc.
VDD
VSS
Publication Date : Feb. 2009
Revision : 1.1
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ESMT
M14D5121632A
Pin Description
Pin Name
Function
Pin Name
Function
Address inputs
- Row address A0~A12
- Column address A0~A9
A10/AP : Auto Precharge
BA0, BA1 : Bank selects (4 Banks)
DM
(LDM, UDM)
DM is an input mask signal for write data.
LDM is DM for DQ0~DQ7 and UDM is DM
for DQ8~DQ15.
DQ0~DQ15
Data-in/Data-out
CLK, CLK
Differential clock input
RAS
Command input
CKE
CAS
Command input
CS
WE
Command input
VDDQ
Supply Voltage for DQ
VSS
Ground
VSSQ
Ground for DQ
VDD
Power
VREF
Reference Voltage
Bi-directional differential Data Strobe.
LDQS and /LDQS are DQS for DQ0~DQ7;
UDQS and /UDQS are DQS for DQ8~DQ15.
VDDL
Supply Voltage for DLL
VSSDL
Ground for DLL
A0~A12,
BA0,BA1
DQS,
(LDQS,
UDQS,
)
ODT
NC
On-Die-Termination.
ODT is only applied to DQ0~DQ15, DM, DQS
and /DQS.
No connection
Clock enable
Chip select
Absolute Maximum Rating
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 ~ 2.3
V
Voltage on VDD supply relative to VSS
VDD
-1.0 ~ 2.3
V
Voltage on VDDL supply relative to VSS
VDDL
-0.5 ~ 2.3
V
Voltage on VDDQ supply relative to VSS
VDDQ
-0.5 ~ 2.3
V
Storage temperature
TSTG
-55 ~ +100
Power dissipation
PD
1
W
Short circuit output current
IOUT
50
mA
°C ( Note *)
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Note *: Storage Temperature is the case surface temperature on the center/top side of the DRAM.
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
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ESMT
M14D5121632A
Operation Temperature Condition
Parameter
Symbol
Value
Unit
TC
0 ~ +95
°C
Operation temperature
Note: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. Supporting 0 to +85℃ with full AC and DC specifications.
Supporting 0 to + 85℃ and being able to extend to + 95 ℃ with doubling auto-refresh commands in frequency to a
32ms period ( tREFI = 3.9μs ) and higher temperature Self-Refresh entry via A7 “1” on EMRS(2).
DC Operation Condition & Specifications
DC Operation Condition
(Recommended DC operating conditions)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Note
Supply voltage
VDD
1.7
1.8
1.9
V
4,9
Supply voltage for DLL
VDDL
1.7
1.8
1.9
V
4,9
Supply voltage for output
VDDQ
1.7
1.8
1.9
V
4,9
Input reference voltage
VREF
0.49 x VDDQ
0.5 x VDDQ
0.51 x VDDQ
V
1,2,9
Termination voltage (system)
VTT
VREF - 0.04
VREF
VREF + 0.04
V
3,9
Input logic high voltage
VIH (DC)
VREF + 0.125
-
VDDQ + 0.3
V
Input logic low voltage
VIL (DC)
-0.3
-
VREF - 0.125
V
(All voltages referenced to VSS)
Parameter
Symbol
Value
Unit
Note
Minimum required output pull-up under AC test load
VOH
VTT + 0.603
V
8
Maximum required output pull-down under AC test load
VOL
VTT - 0.603
V
8
Input leakage current
|I LI|
2
uA
5
Output leakage current
|I LO|
5
uA
6
Output minimum source DC current ( VDDQ(min); VOUT
=1.42V )
Output minimum sink DC current ( VDDQ(min); VOUT =
0.28V )
I OH
-13.4
mA
7, 8
I OL
+13.4
mA
7, 8
Note:
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of
VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed ±2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. VDDQ and VDDL track VDD. AC parameters are measured with VDD, VDDQ and VDDL tied together.
5. Any input 0V ≤ VIN ≤ VDD; all other balls not under test = 0V.
6. 0V ≤ VOUT ≤ VDDQ; DQ and ODT disabled.
7. The DC value of VREF applied to the receiving device is expected to be set to VTT.
8. After OCD calibration to 18Ω at TC = 25℃, VDD = VDDQ = 1.8V.
9. There is no specific device VDD supply voltage requirement for SSTL_18 compliance. However, under all conditions
VDDQ must be less than or equal to VDD.
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
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ESMT
M14D5121632A
DC Specifications
(IDD values are for the operation range of Voltage and Temperature)
Parameter
Symbol
-3
70
65
mA
85
80
mA
IDD2P
All banks idle;
tCK = tCK (IDD); CKE is LOW;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
10
10
mA
IDD2Q
All banks idle;
tCK = tCK (IDD); CKE is HIGH, CS is HIGH;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
15
15
mA
20
20
mA
15
15
IDD0
Operating Current
(Active - Read Precharge)
IDD1
Precharge Quiet
Standby Current
Unit
-2.5
Operating Current
(Active - Precharge)
Precharge
Power-Down
Standby Current
Version
Test Condition
Idle Standby Current IDD2N
One bank;
tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS (IDD)min;
CKE is High, CS is HIGH between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
One bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS (IDD)min, tRCD = tRCD (IDD);
CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
All banks idle;
tCK = tCK (IDD); CKE is HIGH, CS is HIGH;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Active Power-down
Standby Current
Active Standby
Current
Operation Current
(Read)
IDD3P
IDD3N
IDD4R
All banks open;
tCK = tCK (IDD); CKE is LOW;
Other control and address bus inputs
are STABLE;
Data bus input are FLOATING
Fast PDN Exit
MRS(12) = 0
mA
Slow PDN Exit
MRS(12) = 1
12
12
All banks open;
tCK = tCK (IDD), tRAS = tRAS (IDD)max, tRP = tRP (IDD);
CKE is HIGH, CS is HIGH between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
40
35
mA
170
145
mA
160
140
mA
All banks open, continuous burst Reads, IOUT = 0mA;
BL = 4, CL = CL (IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS (IDD)max, tRP = tRP (IDD);
CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING;
Data pattern is the same as IDD4W;
Operation Current
(Write)
IDD4W
All banks open, continuous burst Writes;
BL = 4, CL = CL (IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS (IDD)max, tRP = tRP (IDD);
CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
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ESMT
Parameter
M14D5121632A
Symbol
Auto Refresh Current
IDD5
Self Refresh Current
IDD6
Operating Current
(Bank interleaving)
IDD7
Version
Test Condition
tCK = tCK (IDD);
Refresh command every tRFC (IDD) interval;
CKE is HIGH, CS is HIGH between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Self Refresh Mode;
CLK and CLK at 0V; CKE ≤ 0.2V;
Other control and address bus inputs are FLOATING;
Data bus inputs are FLOATING
All bank interleaving Reads, IOUT = 0mA;
BL = 4, CL= CL (IDD), AL = tRCD (IDD) – 1 × tCK (IDD);
tCK = tCK (IDD), tRC = tRC (IDD),
tRRD = tRRD (IDD), tRCD = 1 × tCK (IDD);
CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are STABLE during Deslects;
Data pattern is the same as IDD4W;
-2.5
-3
105
100
6
240
Unit
mA
mA
230
mA
Note:
1. IDD specifications are tested after the device is properly initialized.
2. Input slew rate is specified by AC Input Test Condition.
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS and /DQS, IDD values must be met with all combinations of EMRS bits 10 and 11.
5. Definitions for IDD:
LOW is defined as VIN ≤ VIL (AC) (max.).
HIGH is defined as VIN
VIH (AC) (min.).
STABLE is defined as inputs stable at a HIGH or LOW level.
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
Address and control signal Inputs are changed between HIGH and LOW every other clock cycle (once per two clocks), and
DQ (not including mask or strobe) signal inputs are changed between HIGH and LOW every other data transfer (once per
clock).
6. When TC ≧ +85 ℃, IDD6 must be derated by 80%.
IDD6 will increase by this amount if TC ≧ +85 ℃ and double refresh option is still enabled.
7. AC Timing for IDD test conditions
For purposes of IDD testing, the following parameters are to be utilized.
-2.5
-3
Parameter
DDR2-800
(5-5-5)
DDR2-800
(6-6-6)
DDR2-667
(5-5-5)
Unit
CL (IDD)
tRCD (IDD)
tRC (IDD)
tRRD (IDD)
tCK (IDD)
tRAS (IDD) min.
tRAS (IDD) max.
tRP (IDD)
tRFC (IDD)
5
12.5
57.5
10
2.5
45
6
15
60
10
2.5
45
5
15
60
10
3
45
tCK
ns
ns
ns
ns
ns
ns
ns
ns
70000
12.5
105
Elite Semiconductor Memory Technology Inc.
15
105
15
105
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Revision : 1.1
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ESMT
M14D5121632A
AC Operation Conditions & Timing Specification
AC Operation Conditions
Parameter
-2.5/ 3
Symbol
Input High (Logic 1) Voltage
VIH(AC)
Input Low (Logic 0) Voltage
VIL(AC)
Input Differential Voltage
VID(AC)
Input Crossing Point Voltage
Output Crossing Point Voltage
Min.
Max.
Unit
VREF + 0.2
Note
V
VREF - 0.2
V
0.5
VDDQ+0.6
V
1
VIX(AC)
0.5 x VDDQ - 0.175
0.5 x VDDQ + 0.175
V
2
VOX(AC)
0.5 x VDDQ - 0.125
0.5 x VDDQ + 0.125
V
2
Note:
1. VID(AC) specifies the input differential voltage |VTR – VCP| required for switching, where VTR is the true input signal (such
as CLK,DQS) and VCP is the complementary input signal (such as CLK ,
). The minimum value is equal to VIH(AC) –
VIL(AC).
2. The typical value of VIX / VOX(AC) is expected to be about 0.5 x VDDQ of the transmitting device and VIX / VOX(AC) is
expected to track variations in VDDQ. VIX / VOX(AC) indicates the voltage at which differential input / output signals must
cross.
Input / Output Capacitance
Parameter
Input capacitance
(A0~A12, BA0~BA1, CKE, CS , RAS , CAS , WE , ODT)
Symbol
Min.
Max.
1.0
1.75
1.0
2.0
CIN2
1.0
-2.5/ 3
CI / O
-2.5/ 3
CIN3
-2.5
-3
Input capacitance (CLK, CLK )
DQS,
& Data input/output capacitance
Input capacitance (DM)
CIN1
Unit Note
pF
1
2.0
pF
1
2.5
3.5
pF
2
2.5
3.5
pF
2
Note: 1. Capacitance delta is 0.25 pF.
2. Capacitance delta is 0.5 pF.
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
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ESMT
M14D5121632A
AC Overshoot / Undershoot Specification
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
Maximum overshoot area above VDD
ODT, CLK, CLK , DQ, DQS,
, DM
Address, CKE, CS , RAS , CAS , WE ,
ODT, CLK, CLK , DQ, DQS,
, DM
Address, CKE, CS , RAS , CAS , WE ,
ODT,
, DM
-3
Unit
0.5
V
0.5
V
0.66
0.8
0.23
, DM
Address, CKE, CS , RAS , CAS , WE ,
ODT,
CLK, CLK , DQ, DQS,
Elite Semiconductor Memory Technology Inc.
-2.5
Address, CKE, CS , RAS , CAS , WE ,
CLK, CLK , DQ, DQS,
Maximum undershoot area below VSS
Value
Pin
0.66
V-ns
0.8
0.23
V-ns
V-ns
V-ns
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ESMT
M14D5121632A
AC Operating Test Conditions
Parameter
Value
Unit
Note
0.5 x VDDQ
V
1
Input signal maximum peak swing ( VSWING(max.) )
1.0
V
1
Input signal minimum slew rate
1.0
V/ns
2,3
VIH / VIL
V
VREF
V
0.5 x VDDQ
V
Input reference voltage ( VREF )
Input level
Input timing measurement reference level
Output timing measurement reference level (VOTR)
4
Note:
1. Input waveform timing is referenced to the input signal crossing through the VIH / VIL (AC) level applied to the device under
test.
2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH (AC) (min.) for rising edges and the
range from VREF to VIL (AC)(max.) for falling edges as shown in the below figure.
3. AC timings are referenced with input waveforms switching from VIL (AC) to VIH (AC) on the positive transitions and VIH (AC) to
VIL (AC) on the negative transitions.
4. The VDDQ of the device under test is reference.
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
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ESMT
M14D5121632A
AC Timing Parameter & Specifications
-2.5
-3
Unit
Note
ps
13
+450
ps
10
0.48
0.52
tCK (avg)
13
0.52
0.48
0.52
tCK (avg)
13
-350
+350
-400
+400
ps
10
tDQSS
-0.25
+0.25
-0.25
+0.25
tCK (avg)
tDS
50
-
100
-
ps
4
tDH
125
-
175
-
ps
5
tDIPW
0.35
-
0.35
-
tCK (avg)
Address and Control Input
setup time
tIS (base)
175
-
200
-
ps
4
Address and Control Input hold
time
tIH (base)
250
-
275
-
ps
5
Control and Address input pulse
width
tIPW
0.6
-
0.6
-
tCK (avg)
DQS input high pulse width
tDQSH
0.35
-
0.35
-
tCK (avg)
DQS input low pulse width
tDQSL
0.35
-
0.35
-
tCK (avg)
DQS falling edge to CLK rising
setup time
tDSS
0.2
-
0.2
-
tCK (avg)
DQS falling edge from CLK
rising hold time
tDSH
0.2
-
0.2
-
tCK (avg)
Data strobe edge to output data
edge
tDQSQ
-
200
-
240
ps
tHZ
-
tAC(max.)
-
tAC(max.)
ps
10
tAC(min.)
tAC(max.)
tAC(min.)
tAC(max.)
ps
10
2 x tAC(min.)
tAC(max.)
2 x tAC(min.)
tAC(max.)
ps
10
6,13
Parameter
Symbol
Min.
Max.
Min.
Max.
2500
8000
-
-
2500
8000
3000
8000
tAC
-400
+400
-450
CLK high-level width
tCH (avg)
0.48
0.52
CLK low-level width
tCL (avg)
0.48
tDQSCK
Clock period
CL=6
tCK (avg)
CL=5
DQ output access time from
CLK/ CLK
DQS output access time from
CLK/ CLK
Clock to first rising edge of DQS
delay
Data-in and DM setup time
(to DQS)
(base)
Data-in and DM hold time
(to DQS)
(base)
DQ and DM input pulse width
(for each input)
Data-out high-impedance
window from CLK/ CLK
Data-out low-impedance window
from CLK/ CLK
DQ low-impedance window from
CLK/ CLK
tLZ
(DQS)
tLZ
(DQ)
Half clock period
tHP
Min
(tCL(abs),tCH(abs))
-
Min
(tCL(abs),tCH(abs))
-
ps
DQ/DQS output hold time from
DQS
tQH
tHP-tQHS
-
tHP-tQHS
-
ps
DQ hold skew factor
tQHS
-
300
-
340
ps
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
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ESMT
Parameter
M14D5121632A
-2.5
Symbol
-3
Min.
Max.
Min.
Max.
Unit
Note
Active to Precharge command
tRAS
45
70K
45
70K
ns
Active to Active command
(same bank)
tRC
57.5 (-CL5)
60 (-CL6)
-
60
-
ns
Auto Refresh row cycle time
tRFC
105
-
105
-
ns
Active to Read, Write delay
tRCD
-
15
-
ns
Precharge command period
tRP
-
15
-
ns
Active bank A to Active bank B
command
tRRD
7.5
-
7.5
-
ns
Write recovery time
tWR
15
-
15
-
ns
Write data in to Read command
delay
tWTR
7.5
-
7.5
-
ns
Col. address to Col. address
delay
tCCD
2
-
2
-
tCK
Active to Auto Precharge delay
tRAP
tRCD(min.)
-
tRCD(min.)
-
ns
Average periodic Refresh
interval ( 0℃ ≦TC ≦ +85℃ )
tREFI
-
7.8
-
7.8
us
Average periodic Refresh
interval (+85℃ ＜TC ≦ +95℃)
tREFI
-
3.9
-
3.9
us
Write preamble
tWPRE
0.35
-
0.35
-
tCK (avg)
Write postamble
tWPST
0.4
0.6
0.4
0.6
tCK (avg)
DQS Read preamble
tRPRE
0.9
1.1
0.9
1.1
tCK (avg)
11
DQS Read postamble
tRPST
0.4
0.6
0.4
0.6
tCK (avg)
12
Load Mode Register / Extended
Mode Register cycle time
tMRD
2
-
2
-
tCK
Auto Precharge write recovery
+ Precharge time
tDAL
WR+RU(tWR / tCK)
+(tRP / tCK (avg))
-
WR+RU(tWR / tCK)
+(tRP / tCK (avg))
-
tCK
Internal Read to Precharge
command delay
tRTP
7.5
-
7.5
-
ns
Exit Self Refresh to Read
command
tXSRD
200
-
200
-
tCK
Exit Self Refresh to non-Read
command
tXSNR
tRFC + 10
-
tRFC + 10
-
ns
Exit Precharge Power-Down to
any non-Read command
tXP
2
-
2
-
tCK
tXARD
2
-
2
-
tCK
3
tXARDS
8 - AL
-
7 - AL
-
tCK
2,3
tCKE
3
-
3
-
tCK
Exit Active Power-Down to
Read command
Exit active power-down to Read
command
12.5 (-CL5)
15 (-CL6)
12.5 (-CL5)
15 (-CL6)
1
(slow exit / low power mode)
CKE minimum pulse width
(high and low pulse width)
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ESMT
Parameter
M14D5121632A
-2.5
Symbol
-3
Min.
Max.
Min.
Max.
Unit
Minimum time clocks remains
ON after CKE asynchronously
drops low
tDELAY
tIS + tCK (avg)+tIH
-
tIS + tCK (avg)+tIH
-
ns
Output impedance test driver
delay
tOIT
0
12
0
12
ns
MRS command to ODT update
delay
tMOD
0
12
0
12
ns
ODT turn-on delay
tAOND
2
2
2
2
tCK
ODT turn-on
tAON
tAC(min.)
tAC(max.) + 700
tAC(min.)
ODT turn-on (Power-Down
mode)
tAONPD
tAC(min.) + 2000
2 x tCK
+tAC(max.) +
1000
tAC(min.) + 2000
ODT turn-off delay
tAOFD
2.5
2.5
2.5
ODT turn-off
tAOF
tAC(min.)
tAC(max.) + 600
ODT turn-off (Power-Down
mode)
tAOFPD
tAC(min.) + 2000
2.5 x tCK
+tAC(max.) +
1000
ODT to Power-Down entry
latency
tANPD
3
3
3
3
tCK
ODT Power-Down exit latency
tAXPD
8
8
8
8
tCK
tAC(max.) +
700
2 x tCK
+tAC(max.) +
1000
2.5
tAC(max.) +
600
2.5 x tCK
tAC(min.) + 2000 +tAC(max.) +
1000
tAC(min.)
ps
Note
14,16
ps
tCK
15,17
,18
ps
ps
Note:
1. For each of the terms above, if not already an integer, round to the next higher integer.
2. AL: Additive Latency.
3. MRS A12 bit defines which Active Power-Down Exit timing to be applied.
4.
5.
6.
The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the VIH (AC) level for a rising
signal and VIL (AC) for a falling signal applied to the device under test.
The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the VIL (DC) level for a rising
signal and VIH (DC) for a falling signal applied to the device under test.
tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input
specification parameter. It is used in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH
calculation is determined by the following equation;
tHP = Min ( tCH (abs), tCL (abs) ), where:
tCH (abs) is the minimum of the actual instantaneous clock HIGH time;
tCL (abs) is the minimum of the actual instantaneous clock LOW time;
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ESMT
M14D5121632A
7.
tQHS accounts for:
a. The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is
transferred to the output; and
b. The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next transition, both
of which are independent of each other, due to data pin skew, output pattern effects, and p-channel to n-channel
variation of the output drivers.
8.
tQH = tHP - tQHS, where:
tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under the max
column. {The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.}
Examples:
a. If the system provides tHP of 1315 ps into a DDR2-667 SDRAM, the DRAM provides tQH of 975 ps minimum.
b. If the system provides tHP of 1420 ps into a DDR2-667 SDRAM, the DRAM provides tQH of 1080 ps minimum.
9.
RU stands for round up. WR refers to the tWR parameter stored in the MRS.
10. When the device is operated with input clock jitter, this parameter needs to be de-rated by the actual tERR (6-10per) of the
input clock. (output de-ratings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tERR (6-10per)(min.) = - 272 ps and tERR (6-10per)(max.) =
+ 293 ps, then tDQSCK (min.)(derated) = tDQSCK (min.) - tERR (6-10per)(max.) = - 400 ps - 293 ps = - 693 ps and tDQSCK (max.)
(derated) = tDQSCK (max.) - tERR (6-10per)(min.) = 400 ps + 272 ps = + 672 ps. Similarly, tLZ (DQ) for DDR2-667 de-rates to tLZ
(DQ)(min.)(derated) = - 900 ps - 293 ps = - 1193 ps and tLZ (DQ)(max.)(derated) = 450 ps + 272 ps = + 722 ps.
11. When the device is operated with input clock jitter, this parameter needs to be de-rated by the actual tJIT (per) of the input
clock. (output de-ratings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT (per)(min.) = - 72 ps and tJIT (per)(max.) = + 93 ps, then
tRPRE (min.)(derated) = tRPRE (min.) + tJIT (per)(min.) = 0.9 x tCK (avg) - 72 ps = + 2178 ps and tRPRE (max.)(derated) = tRPRE
(max.) + tJIT (per)(max.) = 1.1 x tCK (avg) + 93 ps = + 2843 ps.
12. When the device is operated with input clock jitter, this parameter needs to be de-rated by the actual tJIT (duty) of the input
clock. (output de-ratings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT (duty)(min.) = - 72 ps and tJIT (duty)(max.) = + 93 ps,
then tRPST (min.)(derated) = tRPST (min.) + tJIT (duty)(min.) = 0.4 x tCK (avg) - 72 ps = + 928 ps and tRPST (max.)(derated) =
tRPST (max.) + tJIT (duty)(max.) = 0.6 x tCK (avg) + 93 ps = + 1592 ps.
13. Refer to the Clock Jitter table.
14. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on.
ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND.
15. ODT turn off time min is when the device starts to turn off ODT resistance.
ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD.
16. When the device is operated with input clock jitter, this parameter needs to be de-rated by the actual tERR (6-10per) of the
input clock. (output de-ratings are relative to the SDRAM input clock.)
17. When the device is operated with input clock jitter, this parameter needs to be derated by { - tJIT (duty)(max.) - tERR
(6-10per)(max.) } and { - tJIT (duty)(min.) - tERR (6-10per)(min.) } of the actual input clock. (output deratings are relative to the
SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tERR (6-10per)(min.) = - 272 ps, tERR (6- 10per)(max.) = +
293 ps, tJIT (duty)(min.) = - 106 ps and tJIT (duty)(max.) = + 94 ps, then tAOF(min.)(derated) = tAOF(min.) + { - tJIT (duty)(max.) tERR (6-10per)(max.) } = - 450 ps + { - 94 ps - 293 ps} = - 837 ps and tAOF(max.)(derated) = tAOF(max.) + { - tJIT (duty)(min.) tERR (6-10per)(min.) } = 1050 ps + { 106 ps + 272 ps } = + 1428 ps.
18. For tAOFD of DDR2-667/800, the 1/2 clock of tCK in the 2.5 x tCK assumes a tCH (avg), average input clock HIGH pulse width of
0.5 relative to tCK (avg). tAOF (min.) and tAOF (max.) should each be derated by the same amount as the actual amount of tCH
(avg) offset present at the DRAM input with respect to 0.5.
For example, if an input clock has a worst case tCH (avg) of 0.48, the tAOF (min.) should be derated by subtracting 0.02 x tCK
(avg) from it, whereas if an input clock has a worst case tCH (avg) of 0.52, the tAOF (max.) should be derated by adding 0.02 x
tCK (avg) to it. Therefore, we have;
tAOF (min.)(derated) = tAC (min.) - [0.5 - Min(0.5, tCH (avg)(min.))] x tCK (avg)
tAOF (max.)(derated) = tAC (max.) + 0.6 + [Max(0.5, tCH (avg)(max.)) - 0.5] x tCK (avg)
or
tAOF (min.)(derated) = Min(tAC (min.), tAC (min.) - [0.5 - tCH (avg)(min.)] x tCK (avg))
tAOF (max.)(derated) = 0.6 + Max(tAC (max.), tAC (max.) + [tCH (avg)(max.) - 0.5] x tCK (avg)), where:
tCH (avg)(min.) and tCH (avg)(max.) are the minimum and maximum of tCH (avg) actually measured at the DRAM input balls.
Elite Semiconductor Memory Technology Inc.
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ESMT
M14D5121632A
ODT DC Electrical Characteristics
Parameter
Rtt effective impedance value for 75Ω setting
EMRS(1) [A6, A2] = 0, 1
Rtt effective impedance value for 150Ω setting
EMRS(1) [A6, A2) = 1, 0
Rtt effective impedance value for 50Ω setting
EMRS(1) [A6, A2] = 1, 1
Deviation of VM with respect to VDDQ /2
Symbol
Min.
Typ.
Max.
Unit
Rtt1(eff)
60
75
90
Ω
Rtt2(eff)
120
150
180
Ω
Rtt3(eff)
40
50
60
Ω
△VM
-6
-
+6
%
Note:
Measurement Definition for Rtt(eff) :
Rtt(eff) is determined by separately applying VIH(AC) and VIL(AC) to test pin, and then measuring current I(VIH(AC)) and
I(VIL(AC)) respectively.
Measurement Definition for △VM :
Measure voltage (VM) at test pin with no load.
OCD Default Characteristics
Parameter
Min.
Typ.
Max.
Unit
Note
12.6
18
23.4
1
0
-
4
Ω
Ω
1,2,3
1.5
-
5
V/ns
1,4,5
Output impedance
Pull-up and pull-down mismatch
Output slew rate
Note:
1. Absolute specifications: the operation range of Voltage and Temperature.
2. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1,420mV; (VOUT - VDDQ)/IOH must be
less than 23.4Ω for values of VOUT between VDDQ and VDDQ - 280mV. Impedance measurement condition for output sink
DC current: VDDQ = 1.7V; VOUT = 280mV; VOUT/IOL must be less than 23.4Ω for values of VOUT between 0V and 280mV.
3. Mismatch is absolute value between pull-up and pull-down; both are measured at same temperature and voltage.
4. Slew rate measured from VIL (AC) to VIH (AC).
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from
AC to AC.
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
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ESMT
M14D5121632A
Clock Jitter [ DDR2- 800, 667 ]
Parameter
Symbol
-2.5
Min.
2500
-100
-3
Max.
8000
100
Min.
3000
-125
Average clock period
tCK (avg)
Clock period jitter
tJIT (per)
Clock period jitter during
tJIT (per,lck)
-80
80
-100
DLL locking period
Cycle to cycle period jitter
tJIT (cc)
200
Cycle to cycle clock period jitter
tJIT (cc, lck)
160
During DLL locking period
Cumulative error across 2 cycles
tERR (2per)
-150
150
-175
Cumulative error across 3 cycles
tERR (3per)
-175
175
-225
Cumulative error across 4 cycles
tERR (4per)
-200
200
-250
Cumulative error across 5 cycles
tERR (5per)
-200
200
-250
Cumulative error across
tERR (6-10per)
-300
300
-350
n=6,7,8,9,10 cycles
Cumulative error across
tERR (11-50per)
-450
450
-450
n=11,12,….49,50 cycles
Average high pulse width
tCH (avg)
0.48
0.52
0.48
Average low pulse width
tCL (avg)
0.48
0.52
0.48
Duty cycle jitter
tJIT (duty)
-100
100
-125
Note:
1. tCK (avg) is calculated as the average clock period across any consecutive 200 cycle window.
Max.
8000
125
Unit
Note
ps
ps
1
5
100
ps
5
250
ps
6
200
ps
6
175
225
250
250
ps
ps
ps
ps
7
7
7
7
350
ps
7
450
ps
7
0.52
0.52
125
tCK (avg)
tCK (avg)
ps
2
3
4
2.
tCH (avg) is defined as the average HIGH pulse width, as calculated across any consecutive 200 HIGH pulses.
3.
tCL (avg) is defined as the average LOW pulse width, as calculated across any consecutive 200 LOW pulses.
4.
tJIT (duty) is defined as the cumulative set of tCH jitter and tCL jitter. tCH jitter is the largest deviation of any single tCH from tCH
(avg). tCL jitter is the largest deviation of any single tCL from tCL (avg).
tJIT (duty) is not subject to production test.
tJIT (duty) = Min./Max. of { tJIT (CH), tJIT (CL)}, where:
tJIT (CH) = { tCH j - tCH (avg) where j =1 to 200}
tJIT (CL) = {tCL j - tCL (avg) where j =1 to 200}
5.
tJIT (per) is defined as the largest deviation of any single tCK from tCK (avg).
tJIT (per) = Min./Max. of { tCK j - tCK (avg) where j =1 to 200}
tJIT (per) defines the single period jitter when the DLL is already locked.
tJIT (per, lck) uses the same definition for single period jitter, during the DLL locking period only.
tJIT (per) and tJIT (per, lck) are not subject to production testing.
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M14D5121632A
6.
tJIT (cc) is defined as the difference in clock period between two consecutive clock cycles : tJIT (cc) = Max. of | tCK i +1 - tCK i|
tJIT (cc) defines the cycle to cycle jitter when the DLL is already locked.
tJIT (cc, lck) uses the same definition for cycle to cycle jitter, during the DLL locking period only.
tJIT (cc) and tJIT (cc, lck) are not subject to production testing.
7.
tERR (nper) is defined as the cumulative error across multiple consecutive cycles from tCK (avg).
tERR (nper) is not subject to production testing.
8.
These parameters are specified per their average values, however it is understood that the following relationship between
the average timing and the absolute instantaneous timing holds at all times. (Min. and max. of SPEC values are to be used
for calculations in the table below.)
Parameter
Absolute clock period
Absolute clock high pulse width
Symbol
tCK (abs)
Min.
tCK (avg)(min.) + tJIT (per)(min.)
tCH (avg)(min.) x tCK (avg)(min.) +
tCH (abs)
tJIT (duty)(min.)
tCL (avg)(min.) x tCK (avg)(min.) +
Absolute clock low pulse width
tCL (abs)
tJIT (duty)(min.)
Example: For DDR2-667, tCH (abs)(min.) = (0.48 x 3000ps) – 125 ps = 1315 ps
Max.
Unit
tCK (avg)(max.) + tJIT (per)(max.)
tCH (avg)(max.) x tCK (avg)(max.)
+ tJIT (duty)(max.)
tCL (avg)(max.) x tCK (avg)(max.)
+ tJIT (duty)(max.)
ps
ps
ps
Input Slew Rate De-rating
For all input signals the total tIS, tDS (setup time) and tIH, tDH (hold time) required is calculated by adding the data sheet tIS (base), tDS
(base) and tIH (base), tDH (base) value to the ΔtIS, ΔtDS and ΔtIH, ΔtDH de-rating value respectively.
Example: tDS (total setup time) = tDS (base) + ΔtDS.
Setup (tIS, tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF (DC) and the first
crossing of VIH (AC)(min.). Setup (tIS, tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing
of VREF (DC) and the first crossing of VIL (AC)(max.). If the actual signal is always earlier than the nominal slew rate line between
shaded ‘VREF (DC) to AC region’, use nominal slew rate for de-rating value (See the figure of Slew Rate Definition Nominal).
If the actual signal is later than the nominal slew rate line anywhere between shaded ‘VREF (DC) to AC region’, the slew rate of a
tangent line to the actual signal from the AC level to DC level is used for de-rating value (see the figure of Slew Rate Definition
Tangent).
Hold (tIH, tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL (DC)(max.) and the
first crossing of VREF (DC). Hold (tIH, tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing
of VIH (DC)(min.) and the first crossing of VREF (DC). If the actual signal is always later than the nominal slew rate line between
shaded ‘DC level to VREF (DC) region’, use nominal slew rate for de-rating value (See the figure of Slew Rate Definition Nominal).
If the actual signal is earlier than the nominal slew rate line anywhere between shaded ‘DC to VREF (DC) region’, the slew rate of a
tangent line to the actual signal from the DC level to VREF (DC) level is used for de-rating value (see the figure of Slew Rate
Definition Tangent).
Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH / VIL (AC) at
the time of the rising clock transition) a valid input signal is still required to complete the transition and reach VIH / VIL (AC).
For slew rates in between the values listed in the tables below, the de-rating values may be obtained by linear interpolation. These
values are typically not subject to production test. They are verified by design and characterization.
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ESMT
M14D5121632A
DQ slew rate (V/ns)
De-rating Value of tDS/tDH with Differential DQS(DDR2-667, 800)
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
differential slew rate
DQS,
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
0.8 V/ns
Unit
ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH
+100 +45 +100 +45 +100 +45
ps
+67
+21
+67
+21
+67
+21
+79
+33
ps
0
0
0
0
0
0
+12
+12
+24
+24
ps
-5
-14
-5
-14
+7
-2
+19
+10
+31
+22
ps
-13
-31
-1
-19
+11
-7
+23
+5
+35
+17
ps
-10
-42
+2
-30
+14
-18
+26
-6
+38
+6
ps
-10
-59
+2
-47
+14
-35
+26
-23
+38
-11
ps
-24
-89
-12
-77
0
-65
+12
-53
ps
-52
-140
-40
-128
-28
-116
ps
De-rating Value of tIS/tIH (DDR2-667, 800)
Command / Address slew rate (V/ns)
CLK, CLK differential slew rate
2.0 V/ns
1.5 V/ns
ΔtIS
ΔtIH
ΔtIS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.25
0.2
0.15
0.1
+150
+143
+133
+120
+100
+67
0
-5
-13
-22
-34
-60
-100
-168
-200
-325
-517
-1000
Elite Semiconductor Memory Technology Inc.
+94
+89
+83
+75
+45
+21
0
-14
-31
-54
-83
-125
-188
-292
-375
-500
-708
-1125
+180
+173
+163
+150
+130
+97
+30
+25
+17
+8
-4
-30
-70
-138
-170
-295
-487
-970
ΔtIH
+124
+119
+113
+105
+75
+51
+30
+16
-1
-24
-53
-95
-158
-262
-345
-470
-678
-1095
1.0 V/ns
ΔtIS
+210
+203
+193
+180
+160
+127
+60
+55
+47
+38
+26
0
-40
-108
-140
-265
-457
-940
ΔtIH
+154
+149
+143
+135
+105
+81
+60
+46
+29
+6
-23
-65
-128
-232
-315
-440
-648
-1065
Unit
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
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M14D5121632A
Slew Rate Definition Nominal
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M14D5121632A
Slew Rate Definition Tangent
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M14D5121632A
Command Truth Table
Note 7
COMMAND
Register
CS
RAS
CAS
WE
DM
BA0,1
L
L
L
L
X
BA0=0; OP CODE
Mode Register Set
H
H
L
L
L
L
X
BA1=1; OP CODE
L
L
L
H
X
X
L
H
H
H
H
X
X
X
X
X
Self
Refresh
Entry
H
Exit
H
L
L
H
H
H
L
L
H
H
X
V
H
H
L
H
L
H
X
V
Auto Precharge Enable
Auto Precharge Enable
Bank Selection
All Banks
Entry
H
L
H
H
H
H
H
L
Active Power-Down
Exit
L
H
Entry
H
L
Precharge Power-Down
Exit
L
H
L
L
L
L
H
L
H
X
X
X
L
H
H
H
H
X
X
X
L
H
H
H
H
X
X
X
L
H
H
H
H
X
X
X
L
H
H
H
X
X
V
H
V
L
X
H
X
1,2
10,12
6,9,
12
X
Column
Address
1,3
(A9~A0)
Column
Address
1,3
(A9~A0)
X
4,11,
12,15
X
4,8,
12,15
X
4,11,
12,15
X
L
H
DM
H
H
V
X
Device Deselect
H
X
H
X
X
X
X
X
No Operation
H
X
L
H
H
H
X
X
X
Note
Row Address
L
Auto Precharge Disable
Precharge
A9~A0
H
Auto Precharge Disable
Write
A12~A11,
H
Bank Active
Read
A10/AP
Extended MRS
Auto Refresh
Refresh
Note 7
CKE(n-1) CKE(n)
X
4,8,
12,15
16
(OP code = Operand Code, V = Valid, X = Don’t Care, H = Logic High, L = Logic Low)
Note:
1. BA during a MRS/EMRS command selects which mode register is programmed.
2. MRS/EMRS can be issued only at all bank Precharge state.
3. Burst Reads or Writes at BL = 4 cannot be terminated or interrupted.
4. The Power-Down mode does not perform any Refresh operations. The duration of Power-Down is limited by the Refresh
requirements. Need one clock delay to entry and exit mode.
5. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
6. Self Refresh Exit is asynchronous.
7. CKE (n) is the logic state of CKE at clock edge n; CKE (n–1) was the state of CKE at the previous clock edge.
8. All states not shown are illegal or reserved unless explicitly described elsewhere in this document.
9. On Self Refresh, Exit Deselect or NOP commands must be issued on every clock edge occurring during the tXSNR period.
Read commands may be issued only after tXSRD is satisfied.
10. Self Refresh mode can only be entered from all banks Idle state.
11. Power-Down and Self Refresh can not be entered while Read or Write operations, MRS/EMRS operations or Precharge
operations are in progress.
12. Minimum CKE HIGH / LOW time is tCKE (min).
13. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
14. CKE must be maintained HIGH while the device is in OCD calibration mode.
15. ODT must be driven HIGH or LOW in Power-Down if the ODT function is enabled.
16. Used to mask write data, provided coincident with the corresponding data.
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M14D5121632A
Power On and Initialization
DDR2 SDRAM must be powered up and initialized in a predefined manner. Operational procedures other than those specified
may result in undefined operation.
Power-Up and Initialization Sequence
The following sequence is required for Power-Up and Initialization.
1. Apply power and attempt to maintain CKE below 0.2 x VDDQ and ODT (*1) at a low state (all other inputs may be undefined).
- VDD(*2), VDDL(*2) and VDDQ are driven from a single power converter output, AND
- VTT is limited to 0.95V max, AND
- VREF tracks VDDQ /2.
or
- Apply VDD(*2) before or at the same time as VDDL.
- Apply VDDL(*2) before or at the same time as VDDQ.
- Apply VDDQ before or at the same time as VTT and VREF.
at least one of these two sets of conditions must be met.
2.
Start clock and maintain stable condition.
3.
4.
For the minimum of 200us after stable power and clock (CLK, CLK ), then apply NOP or Deselect and take CKE High.
Waiting minimum of 400ns then issue Precharge commands for all banks of the device. NOP or Deselect applied during
400ns period.
Issue EMRS(2) command. (To issue EMRS(2) command, provide “LOW” to BA0, “HIGH” to BA1.)
Issue EMRS(3) command. (To issue EMRS(3) command, provide “HIGH” to BA0 and BA1.)
Issue EMRS(1) to enable DLL. (To issue "DLL Enable" command, provide "LOW" to A0, "HIGH" to BA0 and "LOW" to
BA1.)
Issue a Mode Register Set command for “DLL reset” (*3).
(To issue DLL reset command, provide “HIGH” to A8 and “LOW” to BA0-1)
Issue Precharge commands for all banks of the device.
Issue 2 or more Auto Refresh commands.
Issue a Mode Register Set command with LOW to A8 to initialize device operation. (To program operation parameters without
resetting the DLL.)
At least 200 clocks after step 8, execute OCD calibration (Off Chip Driver impedance adjustment).
If OCD calibration is not used, EMRS(1) OCD default command (A9=A8= A7=1) followed by EMRS(1) OCD calibration
mode exit command (A9=A8=A7=0) must be issued with other operating parameters of EMRS(1).
The DDR2 SDRAM is now ready for normal operation.
5.
6.
7.
8.
9.
10.
11.
12.
13.
Note :
*1) To guarantee ODT off, VREF must be valid and a low level must be applied to the ODT pin.
*2) If DC voltage level of VDDL or VDD is intentionally changed during normal operation, (for example, for the purpose of VDD
corner test, or power saving) “DLL Reset” must be executed.
*3) Every “DLL enable” command resets DLL. Therefore sequence 8 can be skipped during power up. Instead of it, the
additional 200 cycles of clock input is required to lock the DLL after enabling DLL.
Initialization Sequence after Power-UP
tCH tCL
CLK
CLK
tIS
CKE
Command
NOP
PA L L
400ns
EMR S(2)
tRP
EMRS(3)
tMRD
MR S
E MRS (1 )
tMRD
Precharge
All
tMRD
DLL enable
PA L L
tMRD
REF
REF
tRP
tRFC
MRS
tRFC
tMRD
Follow OCD
Flow C hart
O CD default
DLL R eset
Any
Co mma nd
EMRS(1)
EMRS(1)
tOIT
OCD Calibration
mode exit
200 Cycle (min.)
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M14D5121632A
Mode Register Definition
Mode Register Set [MRS]
The mode register stores the data for controlling the various operating modes of DDR2 SDRAM. It programs CAS latency, burst
length, burst type, test mode, DLL reset, WR and various vendor specific options to make the device useful for variety of different
applications. The default value of the mode register is not defined, therefore the mode register must be written after Power-Up for
proper operation. The mode register is written by asserting LOW on CS , RAS , CAS , WE , BA0 and BA1 (The device should
be in all bank Precharge with CKE already high prior to writing into the mode register). The state of address pins A0~A12 in the
same cycle as CS , RAS , CAS , WE , BA0 and BA1 going LOW are written in the mode register.
The tMRD time is required to complete the write operation to the mode register. The mode register contents can be changed using
the same command and clock cycle requirements during normal operation as long as all banks are in the idle state. The mode
register is divided into various fields depending on functionality. The burst length is defined by A0 ~ A2. Burst address sequence
type is defined by A3, CAS latency (read latency from column address) is defined by A4 ~ A6. The DDR2 doesn’t support half clock
latency mode. A7 is used for test mode. A8 is used for DLL reset. A7 must be set to low for normal MRS operation. Write recovery
time WR is defined by A9 ~ A11. Refer to the table for specific codes.
BA1
BA0
A12
0
0
PD
A11
A10
A9
WR
Active Power down exit timing
A12
PD
0
1
Fast Exit (normal)
Slow Exit (low power)
BA1 BA0
0
0
1
1
0
1
0
1
Mode Register
MRS
EMRS(1)
EMRS(2)
EMRS(3) : Reserve
Write recovery for Auto Precharge
A11 A10
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
A9
WR(cycles)
0
1
0
1
0
1
0
1
Reserve
2
3
4
5
6
Reserve
Reserve
A8
A7
A6
DLL
TM
A5
A4
A3
CAS Latency
BT
A2
A1
A0
Address Bus
Mode Register
Burst Length
A7
Mode
A3
Burst Type
0
1
No
Yes
0
1
Sequential
Interleave
A8
DLL reset
A2
A1
A0
Burst Length
0
1
No
Yes
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserve
Reserve
4
8
Reserve
Reserve
Reserve
Reserve
CAS Latency
A6
A5
A4
Latency
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserve
Reserve
Reserve
3
4
5
6
Reserve
Note:
1. “Reserve” are reserved for future use and must be set to 0.
2. WR(min.) (write recovery for Auto Precharge) is determined by tCK (max.) and WR(max.) is determined by tCK (min.)
WR in clock cycles is calculated by dividing tWR (in ns) by tCK (in ns) and rounding up a non-integer value to the next
integer ( WR[cycles] = tWR (ns)/ tCK (ns)).
The mode register must be programmed to this value. This is also used with tRP to determine tDAL.
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M14D5121632A
Burst Address Ordering for Burst Length
Burst
Length
Starting Column Address
(A2, A1,A0)
000
001
010
011
000
001
010
011
100
101
110
111
4
8
Sequential Mode
Interleave Mode
0, 1, 2, 3
1, 2, 3, 0
2, 3, 0, 1
3, 0, 1, 2
0, 1, 2, 3, 4, 5, 6, 7
1, 2, 3, 0, 5, 6, 7, 4
2, 3, 0, 1, 6, 7, 4, 5
3, 0, 1, 2, 7, 4, 5, 6
4, 5, 6, 7, 0, 1, 2, 3
5, 6, 7, 4, 1, 2, 3, 0
6, 7, 4, 5, 2, 3, 0, 1
7, 4, 5, 6, 3, 0, 1, 2
0, 1, 2, 3
1, 0, 3, 2
2, 3, 0, 1
3, 2, 1, 0
0, 1, 2, 3, 4, 5, 6, 7
1, 0, 3, 2, 5, 4, 7, 6
2, 3, 0, 1, 6, 7, 4, 5
3, 2, 1, 0, 7, 6, 5, 4
4, 5, 6, 7, 0, 1, 2, 3
5, 4, 7, 6, 1, 0, 3, 2
6, 7, 4, 5, 2, 3, 0, 1
7, 6, 5, 4, 3, 2, 1, 0
Mode Register Set
0
1
2
3
4
5
6
7
8
CLK
CLK
*1
tC K
Any
Command
Mode
Register Set
Precharge
All Banks
CO MMA ND
t R P* 2
tMRD
*1 : MRS can be issued only at all banks precharge state.
*2 : Minimum tRP is required to issue MRS command.
DLL Enable / Disable
The DLL must be enabled for normal operation. DLL enable is required during power-up initialization, and upon returning to normal
operation after having the DLL disabled for the purpose of debug or evaluation (upon exiting Self Refresh Mode, the DLL is
enabled automatically). Any time the DLL is enabled, 200 clock cycles must occur before a READ command can be issued.
Output Drive Strength
The normal drive strength for all outputs is specified to be SSTL_18. The device also supports a weak drive strength option,
intended for lighter load and/or point-to-point environments.
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M14D5121632A
Extended Mode Register Set-1 [EMRS(1)]
The EMRS(1) stores the data for enabling or disabling DLL, output driver strength, additive latency, ODT, disable
, OCD
program. The default value of the EMRS(1) is not defined, therefore EMRS(1) must be written after power up for proper operation.
The EMRS(1) is written by asserting LOW on CS , RAS , CAS , WE , BA1 and HIGH on BA0 (The device should be in all bank
Precharge with CKE already high prior to writing into EMRS(1)). The state of address pins A0~A12 in the same cycle as CS ,
RAS , CAS , WE and BA1 going LOW and BA0 going HIGH are written in the EMRS(1).
The tMRD time is required to complete the write operation to the EMRS(1). The EMRS(1) contents can be changed using the same
command and clock cycle requirements during normal operation as long as all banks are in the idle state. A0 is used for DLL
enable or disable. A1 is used for reducing output driver strength. The additive latency is defined by A3~A5. A7~A9 are used for
OCD control. A10 is used for
disable. ODT setting is defined by A2 and A6.
BA1
BA0
A12
A11
0
1
Qoff
0
A10
A12
0
1
A8
A7
OCD program
Enable
A10
0
1
A9
Enable
Disable
A6
A5
A3
A2
A1
A0
Rtt
Additive Latency
Rtt
ODS
DLL
A6
A2
Rtt (nominal)
0
0
1
1
0
1
0
1
Disable
75 Ω
150 Ω
50 Ω
Qoff
0
0
1
1
0
1
0
1
Note:
1.
2.
3.
4.
MRS
EMRS(1)
EMRS(2)
EMRS(3): Reserve
DLL Enable
0
1
Enable
Disable
Additive Latency
Output buffer enable
Output buffer disable
Mode Register
A0
Output Driver
Strength Control
Normal (100%)
Weak (60%)
A1
0
1
Driver Impedance Adjustment
BA1 BA0
A4
A9
A8
A7
0
0
0
0
0
1
1
0
1
0
1
1
0
0
1
OCD operation
OCD calibration
mode exit
Drive-1
Drive-0
Adjustable mode
OCD default state
A5
A4
A3
Latency
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
2
3
4
Reverse
Reverse
Reverse
A11 and “Reserve” are reserved for future use and must be set to 0.
When adjustable mode of driver impedance is issued, the previously set value of AL must be applied.
After setting to default state of driver impedance, OCD calibration mode needs to be exited by setting A9~A7 to 000.
Qoff: the feature is intended to be used during IDD characterization of read current. When disabled, all outputs (DQs,
DQS and
) are disabled.
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M14D5121632A
Extended Mode Register Set-2 [EMRS(2)]
The EMRS(2) stores the data for enabling or disabling high temperature self refresh rate. The default value of the EMRS(2) is not
defined, therefore EMRS(2) must be written after power up for proper operation. The EMRS(2) is written by asserting LOW on CS ,
RAS , CAS , WE , BA0 and HIGH on BA1 (The device should be in all bank Precharge with CKE already high prior to writing into
EMRS(2)). The state of address pins A0~A12 in the same cycle as CS , RAS , CAS , WE and BA0 going LOW and BA1 going
HIGH are written in the EMRS(2).
The tMRD time is required to complete the write operation to the EMRS(2). The EMRS(2) contents can be changed using the same
command and clock cycle requirements during normal operation as long as all banks are in the idle state. A7 is used for high
temperature self refresh rate enable or disable.
BA1
BA0
1
0
A11
A10
A9
A7
A6
A5
A4
SRF
A7
Mode Register
0
1
0
1
A8
0
BA1 BA0
0
0
1
1
A12
0
1
MRS
EMRS(1)
EMRS(2)
EMRS(3): Reserve
A3
A2
A1
A0
A2
A1
A0
0
High Temperature
Self Refresh rate
Disable
Enable
Note: All bits except A7, BA0 and BA1 are reserved for future use and must be set to 0.
Extended Mode Register Set-3 [EMRS(3)]
BA1
BA0
1
1
BA1 BA0
0
0
1
1
0
1
0
1
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
0
Mode Register
MRS
EMRS(1)
EMRS(2)
EMRS(3): Reserve
Note: EMRS(3) is reserved for future. All bits except BA0 and BA1 are reserved for future use and must be set to 0 when
setting to mode register during initialization.
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M14D5121632A
Off-Chip Driver (O CD) Impedance Adjustment
DDR2 SDRAM supports driver calibration feature. Every calibration mode command should be followed by “OCD calibration mode
exit” before any other command being issued. MRS should be set before entering OCD impedance adjustment and ODT (On Die
Termination) should be carefully controlled depending on system environment.
OCD Flow Chart
MRS should be set before entering OCD impedance adjustment and
ODT should be carefully controlled depending on system environment
Start
EMRS(1) : OCD calibration mode exit
EMRS(1) : Driver-1
DQ & DQS High ; DQS Low
EMRS(1) : Driver-0
DQ & DQS Low ; DQS High
ALL OK
Test
ALL OK
Test
Need Calibration
Need Calibration
EMRS(1) : OCD calibration mode exit
EMRS(1) : OCD calibration mode exit
EMRS(1) :
Enter Adjustable mode
EMRS(1) :
Enter Adjustable mode
BL=4 code input to all
DQs Inc, Dec, or NOP
BL=4 code input to all
DQs Inc, Dec, or NOP
EMRS(1) : OCD calibration mode exit
EMRS(1) : OCD calibration mode exit
EMRS(1) : OCD calibration mode exit
End
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M14D5121632A
EMRS(1) for OCD Impedance Adjustment
OCD impedance adjustment can be done using the following EMRS(1) mode. In drive mode, all outputs are driven out by DDR2
SDRAM. In Drive-1mode, all DQ, DQS signals are driven HIGH and all
signals are driven LOW. In Drive-0 mode, all DQ,
DQS signals are driven LOW and all
signals are driven HIGH. In adjustable mode, BL = 4 of operation code data must be
used. In case of OCD default state, output driver characteristics have a nominal impedance value of 18 Ω during nominal
temperature and voltage conditions. Output driver characteristics for OCD default state are specified in OCD default characteristics
table. OCD applies only to normal full strength output drive setting defined by EMRS(1) and if weak strength is set or adjustable
mode is used, OCD default output driver characteristics are not applicable. After OCD calibration is completed or driver strength is
set to default, subsequent EMRS(1) commands not intended to adjust OCD characteristics must specify A9-A7 as '000' in order to
maintain the default or calibrated value.
Driver Impedance Adjustment Mode
A9
0
0
0
1
1
A8
0
0
1
0
1
A7
0
1
0
0
1
Operation
OCD calibration mode exit
Device-1: DQ,DQS High and
Device-0: DQ,DQS Low and
Adjustable mode
OCD default state
Low
High
Adjust OCD Impedance
To adjust output driver impedance, controllers must issue EMRS(1) command for adjustable mode along with a 4bit burst code to
DDR2 SDRAM as in the following table. For this operation, Burst Length has to be set to BL = 4 via MRS command before
activating OCD and controllers must drive this burst code to all DQs at the same time. DT0 in the following table means all DQ bits
at bit time 0, DT1 at bit time 1, and so forth. The driver output impedance is adjusted for all DQs simultaneously and after OCD
calibration, all DQs of a given device will be adjusted to the same driver strength setting.
The maximum step count for adjustment is 16 and when the limit is reached, further increment or decrement code has no effect.
The default setting may be any step within the 16 step range. When Adjustable mode command is issued, AL from previously set
value must be applied.
OCD Adjustment Table
DT0
0
0
0
0
1
0
0
1
1
DT1
DT2
0
0
0
0
0
1
1
0
0
0
1
0
1
1
0
0
0
1
Others
DT3
0
1
0
0
0
1
0
1
0
Elite Semiconductor Memory Technology Inc.
Pull-up driver strength
NOP
Increase by 1 step
Decrease by 1 step
NOP
NOP
Increase by 1 step
Decrease by 1 step
Increase by 1 step
Decrease by 1 step
Reserve
Pull-down driver strength
NOP
NOP
NOP
Increase by 1 step
Decrease by 1 step
Increase by 1 step
Increase by 1 step
Decrease by 1 step
Decrease by 1 step
Reserve
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M14D5121632A
OCD Adjustable Mode
CLK
CLK
Command
NOP
EMRS(1)
NOP
EMRS(1)
tWR
WL
DQS, DQS
tDS tDH
DQ
DT0
DT1
DT2
DT3
DM
OCD adjustable
OCD calibration mode exit
Note: For proper operation of adjustable mode, WL = RL - 1 = AL + CL - 1 clocks and tDS / tDH should be met as the
above timing diagram. For input data pattern for adjustment, DT0 - DT3 is a fixed order and "not affected by
MRS addressing mode (ie. sequential or interleave).
OCD Driver Mode
CLK
CLK
Command
DQS, DQS
EMRS(1)
High-Z
NOP
EMRS(1)
DQs high and DQS low for Drive-1, DQs low and DQS high for Drive-0
High-Z
DQs high for Drive-1
DQ
tOIT
Enter drive mode
DQs low for Drive-0
tOIT
OCD Calibration mode exit
Note: Drive mode, both Drive-1 and Drive-0, is used for controllers to measure DDR2 SDRAM driver impedance. In
this mode, all outputs are driven out tOIT after “enter drive mode” command and all output drivers are
turned-off tOIT after “OCD calibration mode exit” command as the above timing diagram.
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M14D5121632A
ODT (On Die Termination)
On Die Termination (ODT) is a feature that allows a DDR2 SDRAM to turn on/off termination resistance for each DQ, all
DQS/
, and all DM signals via the ODT control pin. The ODT feature is designed to improve signal integrity of the memory
channel by allowing the DRAM controller to independently turn on/off termination resistance for any or all devices.
The ODT function is supported for Active and Standby modes. ODT is turned off and not supported in Self Refresh mode.
Timing for ODT Update Delay
CLK
CLK
Command
NOP
EMRS(1)
tAOFD
tIS
ODT
tMOD(max.)
tMOD(min.)
Internal
Rtt Setting
Old setting
Updating
New Setting
Note: tAOFD must be met before issuing EMRS(1) command. ODT must remain low for the entire duration of tMOD
window.
ODT Timing for Active and Standby Mode
T1
T0
T3
T2
T4
T5
T6
CLK
CLK
CKE
tIS
tIS
ODT
tAOFD
tAOND
Internal
Term Res.
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Rtt
tAON(min.)
tAON(max.)
tAOF(min.)
tAOF(max.)
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M14D5121632A
ODT Timing for Power-Down Mode
T1
T0
T3
T2
T4
T5
T6
CLK
CLK
CKE
tIS
tIS
ODT
tAOFPD(max.)
Internal
Term Res.
tAOFPD(min.)
Rtt
tAONPD(min.)
tAONPD(max.)
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M14D5121632A
ODT Timing Mode Switch at Entering Power-Down Mode
T-5
T-4
T-3
T-2
T-1
T1
T0
T2
T3
CLK
CLK
tANPD
CKE
tIS
Entering slow exit Active Power-Down mode
or Precharge Power-Down mode.
tIS
ODT
Internal
Term Res.
tAOFD
Active and Standby
mode timings to
be applied.
tAOFPD(max.)
Power-Down
mode timings to
be applied.
Rtt
tIS
ODT
Internal
Term Res.
Rtt
tIS
ODT
tAOND
Internal
Term Res.
Active and Standby
mode timings to
be applied.
Rtt
tIS
ODT
tAONPD(max.)
Internal
Term Res.
Elite Semiconductor Memory Technology Inc.
Rtt
Power-Down
mode timings to
be applied.
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M14D5121632A
ODT Timing Mode Switch at Exiting Power-Down Mode
T0
T1
T5
T4
T6
T7
T8
T9
T10
T11
CLK
CLK
CKE
tAXPD
tIS
Exiting from slow Active Power-Down mode
or Precharge Power-Down mode.
tIS
ODT
Active and Standby
mode timings to
be applied.
tAOFD
Internal
Term Res.
Rtt
tIS
ODT
Power-Down
mode timings to
be applied.
tAOFPD(max.)
Internal
Term Res.
Rtt
tIS
ODT
Active and Standby
mode timings to
be applied.
tAOND
Internal
Term Res.
Rtt
tIS
ODT
Power-Down
mode timings to
be applied.
tAONPD(max.)
Internal
Term Res.
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Rtt
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M14D5121632A
Precharge
The Precharge command is used to precharge or close a bank that has activated. The command is issued when CS , RAS and
WE are LOW and CAS is HIGH at the rising edge of the clock. The Precharge command can be used to precharge each bank
respectively or all banks simultaneously. The bank select addresses (BA0, BA1) and A10 are used to define which bank is
precharged when the command is initiated. For write cycle, tWR(min.) must be satisfied until the Precharge command can be issued.
After tRP from the precharge, a Bank Active command to the same bank can be initiated.
Bank Selection for Precharge by Address bits
A10/AP
BA1
BA0
Precharge
0
0
0
Bank A Only
0
1
0
Bank B Only
0
0
1
Bank C Only
0
1
1
Bank D Only
1
X
X
All Banks
NOP & Device Deselect
The device should be deselected by deactivating the CS signal. In this mode, DDR2 SDRAM would ignore all the control inputs.
The DDR2 SDRAM are put in NOP mode when CS is active and by deactivating RAS , CAS and WE . For both Deselect and
NOP, the device should finish the current operation when this command is issued.
Bank Active
The Bank Active command is issued by holding CAS and WE HIGH with CS and RAS LOW at the rising edge of the clock
(CLK). The DDR2 SDRAM has four independent banks, so two Bank Select addresses (BA0, BA1) are required. The Bank Active
command to the first Read or Write command must meet or exceed the minimum of RAS to CAS delay time (tRCD(min.)). Once
a bank has been activated, it must be precharged before another Bank Active command can be applied to the same bank. The
minimum time interval between interleaved Bank Active command (Bank A to Bank B and vice versa) is the Bank to Bank delay
time (tRRD min).
Bank Active Command Cycle
T0
T1
T2
T3
Tn
Tn+1
Tn+2
Tn+3
CLK
CLK
Command
Address
ACT
Posted
READ
Bank A
Row Addr.
Bank A
Col. Addr.
ACT
Posted
READ
Bank B
Row Addr.
Bank B
Col. Addr.
tCCD
tRCD=1
tRRD
Additive latency (AL)
tRAS
Bank A
Active
Elite Semiconductor Memory Technology Inc.
Bank B
Active
PRE
PRE
ACT
Bank A
Bank B
Bank A
Row Addr.
Bank A Read begins
tRP
tRC
Bank A
Precharge
Bank B
Precharge
Bank A
Active
Publication Date : Feb. 2009
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ESMT
M14D5121632A
Read Bank
This command is used after the Bank Active command to initiate the burst read of data. The Read command is initiated by
activating CS , CAS , and deasserting WE at the same clock sampling (rising) edge as described in the command truth table.
The length of the burst and the CAS latency time will be determined by the values programmed during the MRS command.
Write Bank
This command is used after the Bank Active command to initiate the burst write of data. The Write command is initiated by
activating CS , CAS , and WE at the same clock sampling (rising) edge as describe in the command truth table. The length of
the burst will be determined by the values programmed during the MRS command.
Posted
Posted CAS operation is supported to make command and data bus efficient for sustainable bandwidths in DDR2 SDRAM. In
this operation, the DDR2 SDRAM allows a Read or Write command to be issued immediately after the Bank Active command (or
any time during the tRRD period). The command is held for the time of the Additive Latency (AL) before it is issued inside the device.
The Read Latency (RL) is controlled by the sum of AL and the CAS latency (CL). Therefore if a user chooses to issue a R/W
command before the tRCD(min), then AL (greater than 0) must be written into the EMRS(1). The Write Latency (WL) is always
defined as RL - 1 (read latency -1) where read latency is defined as the sum of additive latency plus CAS latency (RL=AL+CL).
Read or Write operations using AL allow seamless bursts.
Read followed by a Write to the Same Bank
< AL= 2; CL= 3 ; BL = 4>
-1
0
CLK
1
2
3
4
5
6
7
8
9
10
11
12
CLK
Active
Bank A
CMD
Read
Bank A
Write
Bank A
DQS/DQS
WL = RL -1 =4
CL = 3
AL = 2
>= tRCD
RL = AL + CL = 5
Dout0 Dout1 Dout2 Dout3
DQ
Din0 Din1 Din2 Din3
< AL= 0; CL= 3; BL = 4 >
-1
0
1
2
3
4
5
CLK
6
7
9
8
10
11
12
CLK
AL = 0
CMD
Read
Bank A
Active
Bank A
Write
Bank A
CL = 3
DQS/DQS
>= tRCD
DQ
Elite Semiconductor Memory Technology Inc.
WL = RL -1 = 2
RL = AL + CL = 3
Dout0 Dout1 Dout2 Dout3
Din0 Din1 Din2 Din3
Publication Date : Feb. 2009
Revision : 1.1
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ESMT
M14D5121632A
Essential Functionality for DDR2 SDRAM
Burst Read Operation
The Burst Read command is initiated by having CS and CAS LOW while holding RAS and WE HIGH at the rising edge of
the clock. The address inputs determine the starting column address for the burst. The delay from the start of the command to
when the data from the first cell appears on the outputs is equal to the value of the read latency (RL). The DQS is driven LOW 1
clock cycle before valid data (DQ) is driven onto the data bus. The first bit of the burst is synchronized with the rising edge of DQS.
Each subsequent data-out appears on the DQ pin in phase with the DQS signal in a source synchronous manner.
The RL is equal to an additive latency (AL) plus CAS latency (CL). The CL is defined by the MRS and the AL is defined by the
EMRS(1).
Read (Data Output) Timing
tCH
tCL
CLK
CLK
DQS
DQS
tRPST
tRPRE
DQ
Dout0
Dout1
tDQSQ(max.)
Dout2
Dout3
tDQSQ(max.)
tQH
tQH
Burst Read
< RL= 5 (AL= 2; CL= 3); BL= 4 >
T0
T1
T2
T4
T3
T5
T6
T7
T8
CLK
CLK
CMD
Posted CAS
READ A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
=< tDQSCK
DQS,DQS
AL = 2
CL = 3
RL = 5
DQs
DoutA0 DoutA1 DoutA2 DoutA3
< RL= 3 (AL= 0; CL= 3); BL= 8 >
T0
T1
T2
T4
T3
T6
T5
T7
T8
CLK
CLK
CMD
READ A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
=< tDQSCK
DQS,DQS
CL = 3
RL = 3
DQs
Elite Semiconductor Memory Technology Inc.
DoutA0 DoutA1 DoutA2 DoutA3 DoutA4 DoutA5 DoutA6 DoutA7
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ESMT
M14D5121632A
Burst Read followed by Burst Write
< RL= 5; WL= (RL-1) = 4; BL= 4 >
T0
Tn-1
T1
Tn+1
Tn
Tn+2
Tn+3
Tn+4
Tn+5
CLK
CLK
Posted CAS
READ A
CMD
Posted CAS
NOP
NOP
WRITE A
tRTW (Read to Write-turn around-time)
NOP
NOP
NOP
NOP
NOP
DQS,DQS
RL = 5
WL = RL-1 = 4
DQs
DoutA0 DoutA1 DoutA2 DoutA3
DinA0 DinA1
DinA2 DinA3
Note: The minimum time from the Burst Read command to the Burst Write command is defined by a read to
write-turn around-time(tRTW), which is 4 clocks in case of BL = 4 operation, 6 clocks in case of BL = 8
operation.
Seamless Burst Read
< RL= 5; AL= 2; CL= 3; BL = 4 >
T0
T1
T2
T4
T3
T6
T5
T7
T8
CLK
CLK
Posted CAS
READ A
CMD
NOP
Posted CAS
READ B
NOP
NOP
NOP
NOP
NOP
NOP
DQS,DQS
AL = 2
DQs
CL = 3
RL = 5
DoutA0 DoutA1 DoutA2 DoutA3 DoutB0 DoutB1 DoutB2
Note: The seamless burst read operation is supported by enabling a Read command at every other clock for BL =
4 operation, and every 4 clock for BL = 8 operation. This operation is allowed regardless of same or different
banks as long as the banks are activated.
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ESMT
M14D5121632A
Burst Write Operation
The Burst Write command is issued by having CS , CAS and WE LOW while holding RAS HIGH at the rising edge of the
clock (CLK). The address inputs determine the starting column address. Write latency (WL) is defined by a read latency (RL) minus
one and is equal to (AL + CL -1); and is the number of clocks of delay that are required from the time the write command is
registered to the clock edge associated to the first DQS strobe. A data strobe signal (DQS) should be driven low (preamble) one
clock prior to the WL. The first data bit of the burst cycle must be applied to the DQ pins at the first rising edge of the DQS following
the preamble. The tDQSS specification must be satisfied for each positive DQS transition to its associated clock edge during write
cycles. The subsequent burst bit data are issued on successive edges of the DQS until the burst length is completed, which is 4 or
8 bit burst. When the burst has finished, any additional data supplied to the DQ pins will be ignored. The DQ signal is ignored after
the burst write operation is complete. The time from the completion of the burst write to bank precharge is the write recovery time
(tWR).
Write (Data Input) Timing
tDQSL
tDQSH
DQS
DQS
DQS
DQS
tWPST
tWPRE
DQ
tDS
Din3
Din2
Din1
Din0
tDH
tDS
tDH
DM
Burst Write
< RL= 5 (AL= 2; CL= 3); WL= 4; BL= 4 >
T0
T1
T2
T4
T3
T5
T6
T7
Tn
CLK
CLK
CMD
Posted CAS
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Precharge
Case1 : with tDQSS(max)
DQS,DQS
tDQSS
WL = RL -1 = 4
DQs
tDSH
DinA0
tDQSS
Case2 : with tDQSS(min)
>= tWR
DinA1 DinA2 DinA3
tDSS
DQS,DQS
WL = RL -1 = 4
>= tWR
DQs
DinA0
DinA1 DinA2 DinA3
< RL= 3 (AL= 0; CL= 3); WL= 2; BL= 4 >
T0
T1
T2
T3
T4
T5
T6
T7
Tn
CLK
CLK
CMD
WRITE A
NOP
NOP
NOP
NOP
NOP
Precharge
NOP
Bank A
Active
tDQSS
DQS,DQS
WL = RL -1 = 2
DQs
Elite Semiconductor Memory Technology Inc.
tWR
DinA0
>= tRP
DinA1 DinA2 DinA3
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Revision : 1.1
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ESMT
M14D5121632A
Burst Write followed by Burst Read
< RL= 5 (AL= 2; CL= 3); WL= 4; BL= 4 >
T0
T1
T2
T4
T3
T6
T5
T7
T9
T8
CLK
CLK
Write to Read = CL -1+BL/2+tWTR
NOP
CMD
Posted CAS
READ A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQS,DQS
DQS
AL = 2
WL = RL -1 = 4
CL = 3
RL = 5
> = tWTR
DQ
DinA0
DoutA0
DinA1 DinA2 DinA3
Note: The minimum number of clock from the Burst Write command to the Burst Read command is [CL - 1 + BL/2
+ tWTR]. This tWTR is not a write recovery time (WR) but the time required to transfer the 4 bit write data from
the input buffer into sense amplifiers in the array.
Seamless Burst Write
< RL= 5; WL= 4; BL= 4 >
T0
T1
T2
T3
T4
T6
T5
T7
T8
CLK
CLK
CMD
Posted CAS
WRITE A
NOP
Posted CAS
WRITE B
NOP
NOP
NOP
NOP
NOP
NOP
DQS,DQS
WL = RL-1 = 4
DQs
DinA0 DinA1 DinA2 DinA3 DinB0 DinB1 DinB2 DinB3
Note: The seamless burst write operation is supported by enabling a Write command at every other clock for BL =
4 operation, and every 4 clock for BL = 8 operation. This operation is allowed regardless of same or different
banks as long as the banks are activated.
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ESMT
M14D5121632A
Read Interrupted by a Read
Burst Read can only be interrupted by another read with 4 bit burst boundary. Any other case of read interrupt is not allowed.
< CL= 3; AL= 0; RL= 3; BL= 8 >
CLK
CLK
READ A
CMD
NOP
READ B
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS,DQS
A0
DQs
A1
A2
A3
B0
B1
B2
B3
B4
B5
B6
B7
Note:
1. Read burst interrupt function is only allowed on burst of 8. Burst interrupt of 4 is prohibited.
2. Read burst of 8 can only be interrupted by another Read command. Read burst interruption by Write
command or Precharge command is prohibited.
3. Read burst interrupt must occur exactly two clocks after previous Read command. Any other Read burst
interrupt timings are prohibited.
4. Read burst interruption is allowed to any bank inside DRAM.
5. Read burst with Auto Precharge enabled is not allowed to interrupt.
6. Read burst interruption is allowed by another Read with Auto Precharge command.
7. All command timings are referenced to burst length set in the mode register. They are not referenced to
actual burst. For example, Minimum Read to Precharge timing is AL + BL/2 where BL is the burst length
set in the MRS and not the actual burst (which is shorter because of interrupt).
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ESMT
M14D5121632A
Write Interrupted by a Write
Burst Wirte can only be interrupted by another Write with 4 bit burst boundary. Any other case of Write interrupt is not allowed.
< CL= 3; AL= 0; RL= 3; WL= 2; BL= 8 >
T0
T1
T2
T4
T3
T5
T6
T7
T8
CLK
CLK
CMD
NOP
Write A
NOP
Write B
NOP
NOP
NOP
NOP
NOP
NOP
DQS,DQS
A0
DQs
A1
A2
A3
B0
B1
B2
B3
B4
B5
B6
B7
Note:
1. Write burst interrupt function is only allowed on burst of 8. Burst interrupt of 4 is prohibited.
2. Write burst of 8 can only be interrupted by another Write command. Write burst interruption by Read
command or Precharge command is prohibited.
3. Write burst interrupt must occur exactly two clocks after previous Write command. Any other Write burst
interrupt timings are prohibited.
4. Write burst interruption is allowed to any bank inside DRAM.
5. Write burst with Auto Precharge enabled is not allowed to interrupt.
6. Write burst interruption is allowed by another Write with Auto Precharge command.
7. All command timings are referenced to burst length set in the MRS. They are not referenced to actual
burst. For example, minimum Write to Precharge timing is WL+BL/2+ tWR where tWR starts with the rising
clock after the un-interrupted burst end and not from the end of actual burst end.
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ESMT
M14D5121632A
Burst Read Followed by Precharge
Minimum Read to Precharge command spacing to the same bank = AL + BL/2 + max(tRTP, 2) - 2 clocks.
For the earliest possible Precharge, the Precharge command may be issued on the rising edge which is “Additive latency (AL) +
BL/2 clocks” after a Read command. A new Bank Active command may be issued to the same bank after the Precharge time (tRP).
A Precharge command cannot be issued until tRAS is satisfied.
The minimum Read to Precharge spacing has also to satisfy a minimum analog time from the rising clock edge that initiates the
last 4-bit prefetch of a Read to Precharge command. This time is called tRTP (Read to Precharge). For BL = 4, this is the time from
the actual read (AL after the Read command) to Precharge command. For BL = 8, this is the time from AL + 2 clocks after the Read
to the Precharge command.
< RL= 4 (AL= 1; CL= 3) >
T0
T1
T2
T4
T3
T5
T6
T7
T8
CLK
CLK
Posted CAS
READ A
CMD
BL = 4
NOP
NOP
AL + BL/2 clks
Precharge
Bank A
Active
NOP
NOP
NOP
NOP
DQS,DQS
>= tRP
CL = 3
AL = 1
RL = 4
DQs
DoutA0 DoutA1 DoutA2 DoutA3
>= tRAS
>= tRTP
Posted CAS
READ A
CMD
CL = 3
NOP
NOP
AL + BL/2 clks
NOP
NOP
NOP
NOP
Precharge A
NOP
DQS,DQS
BL = 8
CL = 3
AL = 1
RL = 4
DQs
DoutA0 DoutA1 DoutA2 DoutA3 DoutA4 DoutA5 DoutA6 DoutA7
>= tRTP
< RL= 5 (AL= 2; CL= 3); BL= 4 >
T0
T1
T2
T4
T3
T6
T5
T7
T8
CLK
CLK
CMD
Posted CAS
READ A
NOP
NOP
AL + BL/2 clks
NOP
Precharge A
Bank A
Active
NOP
NOP
NOP
>= tRP
DQS,DQS
AL = 2
RL = 5
DQs
CL = 3
DoutA0 DoutA1 DoutA2 DoutA3
>= tRAS
CL = 3
>= tRTP
< RL= 6 (AL= 2; CL= 4); BL= 4 >
T0
T1
T2
T4
T3
T6
T5
T7
T8
CLK
CLK
CMD
Posted CAS
READ A
NOP
NOP
AL + BL/2 clks
NOP
Precharge A
NOP
NOP
Bank A
Active
NOP
>= tRP
DQS,DQS
AL = 2
CL = 4
RL = 6
DQs
DoutA0 DoutA1 DoutA2 DoutA3
>= tRAS
>= tRTP
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CL = 4
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ESMT
M14D5121632A
< RL= 4 (AL= 0; CL= 4); BL=8 >
T0
T1
T2
T4
T3
T5
T6
T7
T8
CLK
CLK
Posted CAS
WRITE A
CMD
NOP
NOP
NOP
NOP
NOP
Precharg A
AL+2 clks + max(tRTP;2)
NOP
Bank A
Active
> = tRP
DQS,DQS
CL = 4
AL = 0
RL = 4
DQs
DoutA0 DoutA1 DoutA2 DoutA3 DoutA4 DoutA5 DoutA6 DoutA7
>= tRAS
Burst Write Followed by Precharge
Minimum Write to Precharge command spacing to the same bank = WL + BL/2 clocks + tWR.
For write cycles, a delay must be satisfied from the completion of the last burst write cycle until the Precharge command can be
issued. This delay is known as a write recovery time (tWR) referenced from the completion of the Burst Write to the Precharge
command. No Precharge command should be issued prior to the tWR delay.
< WL= (RL-1) = 3; BL=4>
T0
T1
T2
T4
T3
T5
T6
T7
T8
CLK
CLK
CMD
Posted CAS
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Precharg A
> = tWR
DQS,DQS
WL = 3
DinA0
DQs
DinA1 DinA2
DinA3
< WL= (RL-1) = 4; BL=4 >
T0
T1
T2
T3
T4
T5
T6
T7
T9
CLK
CLK
CMD
Posted CAS
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Precharg A
> = tWR
DQS,DQS
WL = 4
DQs
Elite Semiconductor Memory Technology Inc.
DinA0
DinA1 DinA2
DinA3
Publication Date : Feb. 2009
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ESMT
M14D5121632A
Write data mask by DM
One write data mask (DM) pin for each 8 data bits (DQ) will be supported on DDR2 SDRAM, Consistent with the implementation
on DDR2 SDRAM. It has identical timings on write operations as the data bits, and though used in a uni-directional manner, is
internally loaded identically to data bits to insure matched system timing. DM is not used during read cycles.
Data Mask Timing
T1
T2
T3
T4
Din
Din
T5
Tn
DQS
DQS
Din
DQ
Din
Din
Din
Din
Din
Din
DM
Write mask Iatency = 0
Example: < WL= 3; AL= 0; BL= 4 >
T0
T1
T2
T4
T3
T5
T6
T7
T8
CLK
CLK
tWR
Command
NOP
WRIT
[tDQSS(min.)]
WL
tDQSS
DQS,DQS
DQ
Din0
Din2
DM
[tDQSS(max.)]
WL
tDQSS
DQS,DQS
DQ
Din0
Din2
DM
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M14D5121632A
Read with Auto Precharge
If A10 is HIGH when a Read command is issued, the Read with Auto Precharge function is engaged. The device starts an Auto
Precharge operation on the rising edge which is (AL + BL/2) cycles later than the Read with AP command if tRAS (min) and tRTP(min)
are satisfied.
If tRAS(min) is not satisfied at the edge, the start point of Auto Precharge operation will be delayed until tRAS(min) is satisfied.
If tRTP (min) is not satisfied at the edge, the start point of Auto Precharge operation will be delayed until tRTP (min) is satisfied.
In case the internal precharge is pushed out by tRTP, tRP starts at the point where the internal precharge happens (not at the next
rising clock edge after this event). So for BL = 4, the minimum time from Read_AP to the next Bank Active command becomes AL +
(tRTP + tRP)*. For BL = 8, the time from Read_AP to the next Bank Active command is AL + 2 + (tRTP + tRP)*. (Note: “*” means
“rouded up to the next integer”).
< RL= 4 (AL= 1; CL= 3) >
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
CLK
CMD
BL = 8
t RTP <= 2 clocks
Posted CAS
READ A
Autoprecharge
NOP
NOP
AL+BL/2 clks
NOP
NOP
NOP
NOP
NOP
Bank A
Active
> = tRP
DQS,DQS
AL = 1
CL = 3
RL = 4
DQs
DoutA0 DoutA1 DoutA2 DoutA3 DoutA4 DoutA5 DoutA6 DoutA7
>= tRTP
tRTP
Precharge begins here
CMD
BL = 4
t RTP > 2 clocks
Posted CAS
READ A
Autoprecharge
NOP
NOP
>=AL+tRTP+tRP
NOP
NOP
NOP
NOP
Bank A
Active
NOP
DQS,DQS
AL = 1
DQs
CL = 3
RL = 4
DoutA0 DoutA1 DoutA2 DoutA3
tRTP
tRP
Precharge begins here
A new Bank Active command may be issued to the same bank if the following two conditions are satisfied simultaneously.
(1) The Precharge time (tRP) has been satisfied from the clock at which the Auto Precharge begins.
(2) The RAS cycle time (tRC) from the previous bank activation has been satisfied.
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ESMT
M14D5121632A
< RL= 5 (AL= 2; CL= 3); BL= 4; tRCD = 3 clocks; tRTP <= 2 clocks >
T0
T1
T2
T4
T3
T5
T6
T7
T8
CLK
CLK
CMD
tRC Limit
Posted CAS
READ A
Autoprecharge
NOP
NOP
NOP
NOP
>= tRAS(min)
NOP
Bank A
Active
Bank A
Active
NOP
NOP
NOP
Autoprecharge begins
DQS,DQS
CL = 3
AL = 2
>= tRP
RL = 5
DQs
DoutA0 DoutA1 DoutA2 DoutA3
>= tRC
CLK
CLK
CMD
tRP Limit
Posted CAS
READ A
Autoprecharge
NOP
NOP
NOP
NOP
>= tRAS(min)
NOP
NOP
Autoprecharge begins
DQS,DQS
CL = 3
AL = 2
>= tRP
RL = 5
DQs
DoutA0 DoutA1 DoutA2 DoutA3
>= tRC
Write with Auto Precharge
If A10 is HIGH when a Write command is issued, the Write with Auto Precharge function is engaged. The device automatically
begins precharge operation after the completion of the burst write plus write recovery time (tWR). The Bank Active command
undergoing Auto Precharge from the completion of the write burst may be reactivated if the following two conditions are satisfied.
(1) The data-in to bank activate delay time (tWR + tRP) has been satisfied.
(2) The RAS cycle time (tRC) from the previous bank activation has been satisfied.
< WR = 2; BL= 4; tRP = 3 clocks >
T0
T1
T2
T3
T4
T5
T6
T7
Tm
CLK
CLK
CMD
Posted CAS
WRITE A
Autoprecharge
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Bank A
Active
Auto Precharge begins
tRC Limit
DQS,DQS
>= tWR
WL = RL-1 = 2
>= tRP
DinA0 DinA1 DinA2 DinA3
DQs
>= tRC
CLK
T0
T3
T4
T5
T6
T7
T8
T9
T12
CLK
CMD
Posted CAS
WRITE A
Autoprecharge
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Bank A
Active
Auto Precharge begins
tWR + tRP
DQS,DQS
WL = RL-1 = 4
DQs
>= tWR
>= tRP
DinA0 DinA1 DinA2 DinA3
>= tRC
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
46/59
ESMT
M14D5121632A
Auto Refresh & Self Refresh
Auto Refresh
An Auto Refresh command is issued by having CS , RAS and CAS held LOW with CKE and WE HIGH at the rising edge of the
clock(CLK). All banks must be precharged and idle for tRP(min) before the Auto Refresh command is applied. An address counter,
internal to the device, supplies the bank address during the refresh cycle. No control of the external address bus is required once
this cycle has started. When the refresh cycle has completed, all banks will be in the idle state. A delay between the Auto Refresh
command and the next Bank Active command or subsequent Auto Refresh command must be greater than or equal to the
tRFC(min).To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh
interval is provided. A maximum of eight Refresh commands can be posted, meaning that the maximum absolute interval between
any Refresh command and the next Refresh command is 9 x tREFI.
CLK
CLK
COMMAND
Au t o
Refresh
PRE
CMD
CKE = High
tRP
Elite Semiconductor Memory Technology Inc.
tRFC
Publication Date : Feb. 2009
Revision : 1.1
47/59
ESMT
M14D5121632A
Self Refresh
A Self Refresh command is defined by having CS , RAS , CAS and CKE held LOW with WE HIGH at the rising edge of the
clock (CLK). ODT must be turned off before issuing Self Refresh command, by either driving ODT pin low or using EMRS(1)
command. Once the command is registered, CKE must be held LOW to keep the device in Self Refresh mode. The DLL is
automatically disabled upon entering Self Refresh and is automatically enabled upon exiting Self Refresh. When the device has
entered Self Refresh mode, all of the external signals except CKE, are “don’t care”.
For proper Self Refresh operation all power supply pins (VDD, VDDQ, VDDL and VREF) must be at valid levels. The device initiates a
minimum of one refresh command internally within tCKE period once it enters Self Refresh mode. The clock is internally disabled
during Self Refresh operation to save power. Self Refresh mode must be remained tCKE (min).
The user may change the external clock frequency or halt the external clock one clock after Self Refresh entry is registered,
however, the clock must be restarted and stable before the device can exit Self Refresh operation. The procedure for exiting Self
Refresh requires a sequence of commands. First, the clock must be stable prior to CKE going back HIGH. Once Self Refresh Exit
is registered, a delay of tXSRD(min) must be satisfied before a valid command can be issued to the device to allow for any internal
refresh in progress. CKE must remain HIGH for the entire Self Refresh exit period tXSRD for proper operation except for Self
Refresh re-entry. Upon exit from Self Refresh, the device can be put back into Self Refresh mode after waiting tXSNR(min) and
issuing one Refresh command. NOP or deselect commands must be registered on each positive clock edge during the Self
Refresh exit interval tXSNR. ODT should be turned off during tXSRD. The use of Self Refresh mode introduces the possibility that an
internally timed refresh event can be missed when CKE is raised for exit from Self Refresh mode. Upon exit from Self Refresh, the
device requires a minimum of one extra auto refresh command before it is put back into Self Refresh mode.
T0
T1
tCK
tCH
T2
T3
T4
T6
T5
Tn
Tm
tCL
CLK
CLK
>= tXSNR
>= tXSRD
tRP
CKE
tAOFD
tIS
tIS
ODT
tIS
tIS
tIH
Command
Note:
1. Device must be in the “All banks idle” state prior to entering Self Refresh mode.
2. ODT must be turned off tAOFD before entering Self Refresh mode, and can be turned on again when tXSRD
timing is satisfied.
3. tXSRD is applied for a Read or a Read with Auto Precharge command.
4. tXSNR is applied for any command except a Read or a Read with Auto Precharge command.
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
48/59
ESMT
M14D5121632A
Power-Down
Power-Down is synchronously entered when CKE is registered LOW (no accesses can be in progress). CKE is not allowed to go
LOW while MRS or EMRS command time, or read or write operation is in progress. CKE is allowed to go LOW while any of other
operations such as Bank Active, Precharge or Auto Precharge, or Auto Refresh is in progress. The DLL should be in a locked state
when Power-Down is entered. Otherwise DLL should be reset after exiting Power-Down mode for proper read operation.
If Power-Down occurs when all banks are idle, this mode is referred to as Precharge Power-Down; if Power-Down occurs when
there is a Bank Active command in any bank, this mode is referred to as Active Power-Down. Entering Power-Down deactivates
the input and output buffers, excluding CLK, CLK , ODT and CKE. Also the DLL is disabled upon entering Precharge Power-Down
or slow exit Active Power-Down, but the DLL is kept enabled during fast exit Active Power-Down. In Power-Down mode, CKE LOW
and a stable clock signal must be maintained at the inputs of the device, and ODT should be in a valid state but all other input
signals are “Don’t Care”. CKE LOW must be maintained until tCKE has been satisfied. Power-Down duration is limited by 9 times
tREFI of the device.
The Power-Down state is synchronously exited when CKE is registered HIGH (along with a NOP or DESELECT command). CKE
HIGH must be maintained until tCKE has been satisfied. A valid, executable command can be applied with Power-Down exit latency,
tXP, tXARD, or tXARDS, after CKE goes HIGH.
CLK
CLK
tIS tIH
tIS tIH
VALID
NOP
tIH
tIH
tIS
CKE
Command
NOP
tCKE
VALID
VALID
VALID
tCKE
tXP, tXARD,
tXARDS
tCKE
Exit power-down mode
Enter power-down mode
: Don’t care
Read to Power-Down Entry
T0
T1
T2
Tx+1
Tx
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+7
Tx+8
Tx+9
CLK
CLK
CKE should be kept high until the end of burst operation
Command
READ
High
CKE
BL = 4
DQS
DQS
AL + CL
DoutA0 DoutA1 DoutA2 DoutA3
DQ
T0
T1
T2
Tx+1
Tx
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+7
Tx+8
Tx+9
CLK
CLK
Command
READ
CKE should be kept high until the end of burst operation
High
CKE
BL = 8
DQS
DQS
AL + CL
DQ
Elite Semiconductor Memory Technology Inc.
DoutA0 DoutA1 DoutA2 DoutA3 DoutA4 DoutA5 DoutA6 DoutA7
Publication Date : Feb. 2009
Revision : 1.1
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ESMT
M14D5121632A
Read with Auto Precharge to Power-Down Entry
T0
T1
T2
Tx+1
Tx
Tx+2
Tx+3
Tx+5
Tx+4
Tx+6
Tx+7
Tx+8
Tx+9
CLK
CLK
Command
READ
PRE
AL+BL/2
with tRTP =7.5ns
and tRAS(min.) satisfied
CKE should be kept high until the end of burst operation
CKE
DQS
DQS
BL = 4
AL + CL
DoutA0 DoutA1 DoutA2 DoutA3
DQ
T0
T1
T2
Tx+1
Tx
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+7
Tx+8
Tx+9
CLK
CLK
Start internal precharge
Command
PRE
READ
CKE should be kept high until the end of burst operation
AL+BL/2
with tRTP = 7.5ns
and tRAS(min.) satisfied
CKE
DQS
DQS
BL = 8
AL + CL
DoutA0 DoutA1 DoutA2 DoutA3 DoutA4 DoutA5 DoutA6 DoutA7
DQ
Write to Power-Down Entry
T0
T1
Tm
Tm+1
Tm+2
Tm+3
Tx
Tx+1
Tx+2
Ty
Ty+1
Ty+2
Ty+3
Tm+5
Tx
Tx+1
Tx+2
Tx+3
Tx+4
CLK
CLK
WRITE
Command
CKE
tWTR
BL = 4
DQS
DQS
WL
DinA0 DinA1 DinA2 DinA3
DQ
T0
T1
Tm
Tm+1
Tm+2
Tm+3
Tm+4
CLK
CLK
Command
WRITE
CKE
tWTR
BL = 8
DQS
DQS
WL
DQ
DinA0 DinA1 DinA2 DinA3 DinA4 DinA5 DinA6 DinA7
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
50/59
ESMT
M14D5121632A
Write with Auto Precharge to Power-Down Entry
T0
T1
Tm
Tm+1
Tm+3
Tm+2
Tx+1
Tx
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx
Tx+1
Tx+2
Tx+3
Tx+4
T10
T11
CLK
CLK
PRE
WRITE A
Command
CKE
tWR
DQS
DQS
BL = 4
WL
DinA0 DinA1 DinA2 DinA3
DQ
T0
T1
Tm
Tm+2
Tm+1
Tm+3
Tm+5
Tm+4
CLK
CLK
PRE
WRITE A
Command
CKE
tWR
DQS
DQS
BL = 8
WL
DinA0 DinA1 DinA2 DinA3 DinA4 DinA5 DinA6 DinA7
DQ
Auto Refresh/ Bank Active/ Precharge to Power-Down Entry
T0
T1
T2
T3
T8
T7
T6
T5
T4
T9
CLK
CLK
Command
CMD
CKE can go to low one clock after a command
CKE
Note: CMD could be Auto Refresh/ Bank Active/ Precharge command.
MRS/EMRS to Power-Down Entry
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CLK
CLK
Command
MRS/
EMRS
CKE
tMRD
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
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ESMT
M14D5121632A
Asynchronous CKE Low event
DDR2 SDRAM requires CKE to be maintained “HIGH” for all valid operations as defined in this data sheet. If CKE asynchronously
drops “LOW” during any valid operation, the device is not guaranteed to preserve the contents of array. If this event occurs,
memory controller must satisfy tDELAY before turning off the clocks. Stable clocks must exist at the input of device before CKE is
raised “HIGH” again. The device must be fully re-initialized (steps 4 ~ 13) as described in initialization sequence. The device is
ready for normal operation after the initialization sequence.
Stable clocks
tCK
CLK
CLK
tDELAY
CKE
CKE asynchronously
drops low
Clocks can be turned off
after this point
Clock Frequency change in Precharge Power-Down mode
DDR2 SDRAM input clock frequency can be changed under following condition:
The device is in Precharge Power-Down mode. ODT must be turned off and CKE must be at logic LOW level. A minimum of 2
clocks must be waited after CKE goes LOW before clock frequency may change. The device input clock frequency is allowed to
change only between tCK (min) and tCK (max). During input clock frequency change, ODT and CKE must be held at stable LOW
levels. Once input clock frequency is changed, stable new clocks must be provided before Precharge Power-Down may be exited
and DLL must be RESET via MRS after Precharge Power-Down exit. Depending on new clock frequency an additional MRS
command may need to be issued to appropriately set the WR, CL etc.. During DLL re-lock period, ODT must remain off. After the
DLL lock time, the device is ready to operate with new clock frequency.
T0
T1
T2
T4
Tx
Tx+1
Ty
Ty+1
Ty+2
Ty+3
Ty+4
NOP
NOP
DLL
Reset
Tz
CLK
CLK
command
NOP NOP
NOP
Vaild
CKE
ODT
200 clocks
Frequency change
occurs here
tRP
txP
tAOFD
Minimum 2 clocks required
before changing frequency
Elite Semiconductor Memory Technology Inc.
Stable new clock
before power down exit
ODT is off
during DLL RESET
Publication Date : Feb. 2009
Revision : 1.1
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ESMT
M14D5121632A
Functional Truth Table
Current State
IDLE
BANK ACTIVE
READ
WRITE
Address
Command
Action
CS
RAS
CAS
WE
H
X
X
X
X
DESEL
NOP or Power-Down
L
H
H
H
X
NOP
NOP or Power-Down
L
H
L
X
BA, CA, A10
READ / READA /
ILLEGAL (*1)
WRITE / WRITEA
L
L
H
H
BA, RA
Active
Bank Active, Latch RA
L
L
H
L
BA, A10 / A10
PRE / PREA
Precharge / Precharge All
L
L
L
H
X
Refresh
Refresh (*2)
L
L
L
L
Op-Code Mode-Add
MRS / EMRS
Mode Register setting / Extended
Mode Register setting (*2)
H
X
X
X
X
DESEL
NOP
L
H
H
H
X
NOP
NOP
L
H
L
H
BA, CA, A10
READ / READA
Begin Read, Latch CA,
Determine Auto Precharge
L
H
L
L
BA, CA, A10
WRITE / WRITEA
Begin Write, Latch CA,
Determine Auto Precharge
L
L
H
H
BA, RA
Active
ILLEGAL (*1)
L
L
H
L
BA, A10 /A10
PRE / PREA
Precharge / Precharge All
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code Mode-Add
MRS / EMRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Continue Burst to END)
L
H
H
H
X
NOP
NOP (Continue Burst to END)
L
H
L
H
BA, CA, A10
READ / READA
Terminate Burst, Latch CA,
Begin New Read,
Determine Auto Precharge (*1, 4)
L
H
L
L
BA, CA, A10
WRITE / WRITEA
ILLEGAL (*1)
L
L
H
H
BA, RA
Active
ILLEGAL (*1)
L
L
H
L
BA, A10 / A10
PRE / PREA
ILLEGAL (*1) / ILLEGAL
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code Mode-Add
MRS / EMRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Continue Burst to end)
L
H
H
H
X
NOP
NOP (Continue Burst to end)
L
H
L
H
BA, CA, A10
READ / READA
ILLEGAL (*1)
L
H
L
L
BA, CA, A10
WRITE / WRITEA
Terminate Burst, Latch CA,
Begin new Write,
Determine Auto-Precharge (*1, 4)
L
L
H
H
BA, RA
Active
ILLEGAL (*1)
L
L
H
L
BA, A10 / A10
PRE / PREA
ILLEGAL (*1) / ILLEGAL
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code Mode-Add
MRS / EMRS
ILLEGAL
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
53/59
ESMT
Current State
READ with
AUTO
PRECHARGE
WRITE with
AUTO
PRECHARGE
PRE-CHARGIN
G
ROW
ACTIVATING
M14D5121632A
Address
Command
Action
CS
RAS
CAS
WE
H
X
X
X
X
DESEL
NOP (Continue Burst to end)
L
H
H
H
X
NOP
NOP (Continue Burst to end)
L
H
L
H
BA, CA, A10
READ / READA
ILLEGAL (*1)
L
H
L
L
BA, CA, A10
WRITE / WRITEA
ILLEGAL (*1)
L
L
H
H
BA, RA
Active
ILLEGAL (*1)
L
L
H
L
BA, A10 / A10
PRE / PREA
ILLEGAL (*1) / ILLEGAL
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code Mode-Add
MRS / EMRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Continue Burst to END)
L
H
H
H
X
NOP
NOP (Continue Burst to END)
L
H
L
H
BA, CA, A10
READ / READA
ILLEGAL (*1)
L
H
L
L
BA, CA, A10
WRITE / WRITEA
ILLEGAL (*1)
L
L
H
H
BA, RA
Active
ILLEGAL (*1)
L
L
H
L
BA, A10
PRE / PREA
ILLEGAL (*1) / ILLEGAL
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code Mode-Add
MRS / EMRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Idle after tRP)
L
H
H
H
X
NOP
NOP (Idle after tRP)
L
H
L
X
BA, CA, A10
READ / READA /
ILLEGAL (*1)
WRITE / WRITEA
L
L
H
H
BA, RA
Active
ILLEGAL (*1)
L
L
H
L
BA, A10 / A10
PRE / PREA
NOP (Idle after tRP)
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code Mode-Add
MRS / EMRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Bank Active after tRCD)
L
H
H
H
X
NOP
NOP (Bank Active after tRCD)
L
H
L
X
BA, CA, A10
READ / READA /
ILLEGAL (*1, 5)
WRITE / WRITEA
L
L
H
H
BA, RA
Active
ILLEGAL (*1)
L
L
H
L
BA, A10 / A10
PRE / PREA
ILLEGAL
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code Mode-Add
MRS / EMRS
ILLEGAL
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
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ESMT
Current State
M14D5121632A
Address
Command
Action
CS
RAS
CAS
WE
H
X
X
X
X
DESEL
NOP (Bank Active after tWR)
L
H
H
H
X
NOP
NOP (Bank Active after tWR)
L
H
L
H
BA, CA, A10
READ / READA
ILLEGAL (*1, 6)
L
H
L
L
BA, CA, A10
WRITE / WRITEA
WRITE / WRITEA
L
L
H
H
BA, RA
Active
ILLEGAL (*1)
L
L
H
L
BA, A10 / A10
PRE / PREA
ILLEGAL (*1) / ILLEGAL
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code Mode-Add
MRS / EMRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Bank Active after tWR)
L
H
H
H
X
NOP
NOP (Bank Active after tWR)
WRITE
RECOVERING
with
L
H
L
X
BA, CA, A10
READ / READA /
ILLEGAL (*1)
WRITE / WRITEA
AUTO
PRECHARGE
L
L
H
H
BA, RA
Active
ILLEGAL (*1)
L
L
H
L
BA, A10 / A10
PRE / PREA
ILLEGAL (*1) / ILLEGAL
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code Mode-Add
MRS / EMRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Idle after tRFC)
L
H
H
H
X
NOP
NOP (Idle after tRFC)
L
H
L
X
BA, CA, A10
READ / READA /
ILLEGAL
WRITE / WRITEA
L
L
H
H
BA, RA
Active
ILLEGAL
L
L
H
L
BA, A10 / A10
PRE / PREA
ILLEGAL
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code Mode-Add
MRS / EMRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Idle after tMRD)
L
H
H
H
X
NOP
NOP (Idle after tMRD)
L
H
L
X
BA, CA, A10
READ / READA /
ILLEGAL
WRITE / WRITEA
L
L
H
H
BA, RA
Active
ILLEGAL
L
L
H
L
BA, A10 / A10
PRE / PREA
ILLEGAL
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code Mode-Add
MRS / EMRS
ILLEGAL
WRITE
RECOVERING
REFRESH
(Extended)
MODE
REGISTER
SETTING
H = High Level, L = Low level, X = Don’t Care
BA = Bank Address, RA =Row Address, CA = Column Address, NOP = No Operation
ILLEGAL = Device operation and / or data integrity are not guaranteed.
Note :
1.
2.
3.
4.
5.
6.
This command may be issued for other banks, depending on the state of the banks.
All banks must be in “IDLE”.
All AC timing specs must be met.
Only allowed at the boundary of 4 bits burst. Burst interruption at other timings is illegal.
Available in case tRCD is satisfied by AL setting.
Available in case tWTR is satisfied.
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
55/59
ESMT
M14D5121632A
Simplified States Diagram
Power-Up and
Initialization
Sequence
CKEL
OCD
calibration
SRF
PR
CKEH
Idle
Settign
MRS
EMRS
(E)MRS
Self
Refreshing
REF
All banks
precharged
Refreshing
CKEL
ACT
CKEL
CKEH
Precharge
PowerDown
CKEL
CKEL
Activating
CKEL
Automatic Sequence
Active
Power
-Down
Command Sequence
CKEH
CKEL
Bank
Active
WRA
RDA
Read
Write
Write
Reading
RDA
WRA
WRA
RDA
PR, PRA
Writing
With
Auto Precharge
Read
Read
Write
Write
PR, PRA
PR, PRA
Reading
With
Auto Precharge
Precharging
CKEL = CKE LOW
CKEH = CKE HIGH
ACT = Activate
WR(A) = Write (with Auto Precharge)
RD(A) = Read (with Auto Precharge)
PR(A) = Precharge (All)
(E)MRS = (Extended) Mode Register Set
SRF = Enter Self Refresh
REF = Auto Refresh
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
56/59
ESMT
M14D5121632A
PACKING
DIMENSIONS
84-BALL
DDR SDRAM
Symbol
A
A1
Φb
D
E
D1
E1
e
e1
( 10x12.5 mm )
Dimension in mm
Min
Norm
Max
1.20
0.30
0.35
0.40
0.40
0.45
0.50
9.90
10.00
10.10
12.40
12.50
12.60
6.40 BSC
11.20 BSC
0.80 BSC
0.80 BSC
Dimension in inch
Min
Norm
Max
0.047
0.012
0.014
0.016
0.016
0.018
0.020
0.390
0.394
0.398
0.488
0.492
0.496
0.252 BSC
0.441 BSC
0.031 BSC
0.031 BSC
Controlling dimension : Millimeter.
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
57/59
ESMT
M14D5121632A
Revision History
Revision
Date
0.1
2008.02.18
0.2
2008.03.04
0.3
2008.03.11
0.4
2008.04.30
1.0
2009.02.06
1.1
2009.02.27
Elite Semiconductor Memory Technology Inc.
Description
Original
1. Modify title
2. Correct Address number (A0~13 => A0~12)
1. Delete -3.75 and -5 speed grade
2. Add 3.9us refresh interval at +85°C < Tc ≦ +95°C
3. Modify DC spec
4. Add CL6
1. Add VOH, VOL and AC overshoot/ undershoot spec.
2. Add notes for AC operation test condition and AC timing
parameter & specification.
3. Add clock jitter and input slew rate spec.
1.Delete “Preliminary”
2.Move Revision History to the last
Correct the marking for e1 of packing dimension
Publication Date : Feb. 2009
Revision : 1.1
58/59
ESMT
M14D5121632A
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Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
59/59