AOSMD AO4611 60v dual p n-channel mosfet Datasheet

AO4611
60V Dual P + N-Channel MOSFET
General Description
Product Summary
The AO4611 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs may
be used to form a level shifted high side switch,
and for a host of other applications.
N-Channel
VDS (V) = 60V
ID = 6.3A (VGS=10V)
RDS(ON)
< 25mΩ (VGS=10V)
< 30mΩ (VGS=4.5V)
P-Channel
-60V
-4.9A
100% UIS Tested
100% Rg Tested
100% UIS Tested
100% Rg Tested
< 42mΩ (VGS = -10V)
< 52mΩ (VGS = -4.5V)
SOIC-8
Top View
D2
Bottom View
D1
Top View
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS
60
Gate-Source Voltage
Continuous Drain
Current A
VGS
TA=25°C
TA=70°C
Pulsed Drain Current B
TA=25°C
Power Dissipation
S1
n-channel
TA=70°C
Junction and Storage Temperature Range
Max p-channel
-60
±20
±20
6.3
-4.9
ID
5
-3.9
IDM
40
-30
TJ, TSTG
A
2
2
1.28
-55 to 150
-55 to 150
Symbol
RθJA
RθJL
RθJA
RθJL
Units
V
V
1.28
PD
Thermal Characteristics: n-channel and p-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
p-channel
W
°C
Device
n-ch
n-ch
n-ch
Typ
48
74
35
Max
62.5
110
60
Units
°C/W
°C/W
°C/W
p-ch
p-ch
p-ch
48
74
35
62.5
110
40
°C/W
°C/W
°C/W
AO4611
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
40
VGS=10V, ID=6.3A
TJ=125°C
VGS=4.5V, ID=5.7A
gFS
Forward Transconductance
VDS=5V, ID=6.3A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
60
VDS=48V, VGS=0V
IGSS
RDS(ON)
Typ
100
nA
2.1
3
V
20
25
34
42
22
30
mΩ
1
V
3
A
A
mΩ
27
0.74
1920
VGS=0V, VDS=30V, f=1MHz
µA
S
2300
pF
155
pF
116
pF
0.65
0.8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
47.6
58
nC
Qg(4.5V) Total Gate Charge
24.2
30
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=6.3A
6
nC
14.4
nC
7.6
ns
VGS=10V, VDS=30V, RL=4.7Ω,
RGEN=3Ω
5
ns
28.9
ns
IF=6.3A, dI/dt=100A/µs
33.2
5.5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=6.3A, dI/dt=100A/µs
ns
40
43
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev5: Nov. 2010
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4611
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
40
30
10V
4V
25
VDS=5V
30
125°C
20
ID(A)
ID (A)
4.5V
20
3.5V
15
10
10
25°C
5
VGS=3V
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3.5
4
Normalized On-Resistance
2.2
22
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics
24
VGS=4.5V
20
VGS=10V
18
16
VGS=10V
ID=6.3A
2
1.8
VGS=4.5V
1.6
ID=5.7A
1.4
1.2
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
50
1.0E+01
ID=6.3A
1.0E+00
40
125°C
125°C
1.0E-01
IS (A)
RDS(ON) (mΩ )
2.5
30
25°C
1.0E-02
25°C
1.0E-03
20
1.0E-04
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4611
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
3500
10
VDS=30V
ID=6.3A
3000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
2500
2000
1500
Coss
1000
Crss
2
500
0
0
0
10
20
30
40
50
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
10ms
1s
1.0
30
Power (W)
ID (Amps)
10.0
TJ(Max)=150°C
TA=25°C
10µs
100µs
1ms
0.1s
10s
TJ(Max)=150°C
TA=25°C
10
0
0.001
1
10
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
20
DC
0.1
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
30
40
RDS(ON)
limited
0.1
10
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4611
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-60
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-30
VGS=-10V, ID=-4.9A
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-4.4A
nA
-3
V
34
42
58
72
42
52
A
Forward Transconductance
VDS=-5V, ID=-4.9A
17.8
Diode Forward Voltage
IS=-1A,VGS=0V
-0.73
IS
Maximum Body-Diode Continuous Current
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
2417
VGS=0V, VDS=-30V, f=1MHz
µA
±100
gFS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
-1.9
VSD
Coss
Max
V
VDS=-48V, VGS=0V
IGSS
RDS(ON)
Typ
mΩ
mΩ
S
-1
V
-3
A
2900
pF
179
pF
120
pF
1.9
2.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
45.2
55
nC
Qg(4.5V) Total Gate Charge (4.5V)
22.8
28
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-30V, ID=-4.9A
5.8
nC
9.6
nC
9.8
ns
6.1
ns
44
ns
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=-4.9A, dI/dt=100A/µs
32
Qrr
Body Diode Reverse Recovery Charge IF=-4.9A, dI/dt=100A/µs
42
VGS=-10V, VDS=-30V, RL=6.2Ω,
RGEN=3Ω
12.7
ns
42
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
givenapplication
applicationdepends
dependson
onthe
theuser's
user'sspecific
specificboard
boarddesign.
design.The
Thecurrent
currentrating
ratingisisbased
basedon
onthe
thet t ≤≤ 10s thermal
The value in any agiven
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
80 µs µs
pulses,
duty
cycle
0.5%
max.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300
pulses,
duty
cycle
0.5%
max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev5: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4611
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
25
-10V
-4V
-3.5V
-6V
VDS=-5V
25
20
-ID(A)
-ID (A)
20
15
10
-3V
15
10
125°C
5
5
25°C
VGS=-2.5V
0
0
0
1
2
3
4
5
1
1.5
50
Normalized On-Resistance
RDS(ON) (mΩ )
2.5
3
3.5
4
2
VGS=-4.5V
45
40
35
VGS=-10V
ID=-4.9A
1.8
VGS=-10V
1.6
1.4
VGS=-4.5V
ID=-4.4A
1.2
1
0.8
30
0
5
10
15
0
20
25
100
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
90
ID=-4.9A
80
1.0E+00
1.0E-01
125°C
70
125°C
1.0E-02
-IS (A)
RDS(ON) (mΩ )
2
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
60
1.0E-03
50
1.0E-04
40
25°C
25°C
1.0E-05
30
1.0E-06
20
0.0
2
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4611
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
3500
10
VDS=-30V
ID=-4.9A
3000
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
2500
2000
1500
1000
2
Coss
Crss
500
0
0
0
10
20
30
40
50
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100µs
1ms
0.1s
10µs
50
60
30
Power (W)
-ID (Amps)
40
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10ms
1s
20
10
10s
DC
0.1
0.1
30
40
TJ(Max)=150°C, T A=25°C
1.0
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
10
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
100
1000
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