HZC Series Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-1436A (Z) Rev.1 Jan. 2002 Features • These diodes are delivered taped. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HZC Series Let to Mark Code UFP Pin Arrangement Cathode mark Mark 1 51 2 1. Cathode 2. Anode HZC Series Absolute Maximum Ratings (Ta = 25°C) Item Symbol 1 Value Unit 150 mW Power dissipation Pd * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. See Fig2. Electrical Characteristics (Ta = 25°C) Zener voltage VZ (V) * 1 Reverse current Dynamic resistance ESD-Capability * Test Condition IR (µ µA) Test Condition rd (Ω Ω) Test Condition — (kV) * Type Min Max IZ (mA) Max VR (V) Max IZ (mA) Min HZC2.0 1.90 2.20 5 120.0 0.5 100 5 30 HZC2.2 2.10 2.40 5 120.0 0.7 100 5 30 HZC2.4 2.30 2.60 5 120.0 1.0 100 5 30 HZC2.7 2.50 2.90 5 120.0 1.0 110 5 30 HZC3.0 2.80 3.20 5 50.0 1.0 120 5 30 HZC3.3 3.10 3.50 5 20.0 1.0 130 5 30 HZC3.6 3.40 3.80 5 10.0 1.0 130 5 30 HZC3.9 3.70 4.10 5 10.0 1.0 130 5 30 HZC4.3 4.01 4.48 5 10.0 1.0 130 5 30 HZC4.7 4.42 4.90 5 10.0 1.0 130 5 30 HZC5.1 4.84 5.37 5 5.0 1.5 130 5 30 HZC5.6 5.31 5.92 5 5.0 2.5 80 5 30 HZC6.2 5.86 6.53 5 2.0 3.0 50 5 30 HZC6.8 6.47 7.14 5 1.0 3.5 30 5 30 HZC7.5 7.06 7.84 5 1.0 4.0 30 5 30 HZC8.2 7.76 8.64 5 0.5 5.0 30 5 30 HZC9.1 8.56 9.55 5 0.5 6.0 30 5 30 HZC10 9.45 10.55 5 0.5 7.0 30 5 30 HZC11 10.44 11.56 5 0.5 8.0 30 5 30 Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse Failure criterion ; According to IR spec Rev.1, Jan. 2002, page 2 of 6 2 2 HZC Series Zener voltage VZ (V) * 1 Reverse current Dynamic resistance ESD-Capability * Test Condition IR (µ µA) Test Condition rd (Ω Ω) Test Condition — (kV) * IZ (mA) Min Type Min Max IZ (mA) Max VR (V) HZC12 11.42 12.60 5 0.5 9.0 35 5 30 HZC13 12.47 13.96 5 0.5 10.0 35 5 30 HZC15 13.84 15.52 5 0.5 11.0 40 5 30 HZC16 15.37 17.09 5 0.5 12.0 40 5 30 HZC18 16.94 19.03 5 0.5 13.0 45 5 30 HZC20 18.86 21.08 5 0.5 15.0 50 5 30 HZC22 20.88 23.17 5 0.5 17.0 55 5 30 HZC24 22.93 25.57 5 0.5 19.0 60 5 30 HZC27 25.10 28.90 2 0.5 21.0 70 2 30 HZC30 28.00 32.00 2 0.5 23.0 80 2 30 HZC33 31.00 35.00 2 0.5 25.0 80 2 25 HZC36 34.00 38.00 2 0.5 27.0 90 2 20 Max 2 2 Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse Failure criterion ; According to IR spec Mark Code Type Mark No. Type Mark No. Type Mark No. HZC2.0 20 HZC5.6 56 HZC15 15 * HZC2.2 22 HZC6.2 62 HZC16 16 * HZC2.4 24 HZC6.8 68 HZC18 18 * HZC2.7 27 HZC7.5 75 HZC20 20 * HZC3.0 30 HZC8.2 82 HZC22 22 * HZC3.3 33 HZC9.1 91 HZC24 24 * HZC3.6 36 HZC10 10 * HZC27 27 * HZC3.9 39 HZC11 11 * HZC30 30 * HZC4.3 43 HZC12 12 * HZC33 33 * HZC4.7 47 HZC13 13 * HZC36 36 * HZC5.1 51 Note: 1. HZC10 To HZC36 has ■, on the right of Laser Mark. Rev.1, Jan. 2002, page 3 of 6 HZC Series HZC16 HZC13 HZC2.4 HZC3.0 HZC3.6 HZC4.3 HZC5.1 HZC6.2 HZC7.5 HZC8.2 HZC9.1 HZC10 HZC11 Main Characteristic 10 0 HZC36 HZC33 HZC30 HZC27 HZC22 HZC24 HZC20 HZC6.8 2 HZC15 HZC12 4 HZC18 6 HZC2.0 Zener Current IZ (mA) 8 0 4 8 12 16 20 24 28 32 36 40 Zener Voltage VZ (V) mV/°C 0 5 10 15 20 25 30 35 40 45 Polyimide board 20h×15w×0.8t 1.5 200 0.8 40 35 30 25 20 15 10 5 0 −5 −10 −15 −20 −25 3.0 %/°C 250 Power Dissipation Pd (mW) 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 −0.01 −0.02 −0.03 −0.04 −0.05 −0.06 Zener Voltage Temperature Coefficient γZ (mV/°C) Zener Voltage Temperature Coefficient γZ (%/°C) Fig.1 Zener current vs. Zener voltage 150 1.5 unit: mm 100 50 0 0 50 100 150 200 Zener Voltage VZ (V) Ambient Temperature Ta (°C) Fig.2 Temperature Coefficient vs. Zener voltage Fig.2 Power Dissipation vs. Ambient Temperature Rev.1, Jan. 2002, page 4 of 6 HZC Series Package Dimensions As of July, 2001 1.2 ± 0.10 0.13 ± 0.05 1.6 ± 0.10 0.6 ± 0.10 0.3 ± 0.05 0.8 ± 0.10 Unit: mm Hitachi Code JEDEC JEITA Mass (reference value) UFP — Conforms 0.0016 g Rev.1, Jan. 2002, page 5 of 6 HZC Series Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 5.0 Rev.1, Jan. 2002, page 6 of 6