APT11N80KC3
0.450Ω
800V 11A
Super Junction MOSFET
TO-220
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
G
• Avalanche Energy Rated
D
S
• Extreme dv/dt Rated
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VDSS
ID
Parameter
APT11N80KC3
UNIT
800
Volts
Drain-Source Voltage
11
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
Gate-Source Voltage Transient
±30
Total Power Dissipation @ TC = 25°C
156
Watts
Linear Derating Factor
1.25
W/°C
VGSM
PD
TJ,TSTG
TL
dv
/dt
33
Operating and Storage Junction Temperature Range
7
EAR
Repetitive Avalanche Energy
7
Single Pulse Avalanche Energy
°C
260
Drain-Source Voltage slope (VDS = 640V, ID = 11A, TJ = 125°C)
Repetitive Avalanche Current
EAS
-55 to 150
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Volts
50
V/ns
11
Amps
0.2
4
mJ
470
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
Drain-Source On-State Resistance
2
TYP
800
(VGS = 10V, ID = 7.1A)
Zero Gate Voltage Drain Current (VDS = 800, VGS = 0V)
UNIT
Volts
0.39
0.45
0.5
20
Zero Gate Voltage Drain Current (VDS = 800, VGS = 0V, TJ = 150°C)
Ohms
μA
200
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 680μA)
MAX
2.1
3
±100
nA
3.9
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
Microsemi Website - http://www.microsemi.com
050-7135 Rev B 3-2012
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT11N80KC3
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
770
Crss
Reverse Transfer Capacitance
f = 1 MHz
18
Qg
Total Gate Charge
3
VGS = 10V
60
Qgs
Gate-Source Charge
VDD = 400V
8
Qgd
Gate-Drain ("Miller ") Charge
td(on)
ID = 11A @ 25°C
tf
15
VDD = 400V
ID = 11A @ 25°C
70
80
7
10
RG = 7.5Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
ns
165
VDD = 533V, VGS = 15V
6
nC
25
VGS = 10V
Turn-off Delay Time
pF
30
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
1585
VGS = 0V
Turn-on Delay Time
tr
MAX
ID = 11A, RG = 5Ω
50
INDUCTIVE SWITCHING @ 125°C
305
VDD = 533V VGS = 15V
μJ
65
ID = 11A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
MIN
TYP
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = - 11A)
11
33
1
t rr
Reverse Recovery Time (IS = 11A, dl S/dt = -100A/μs, VR = 640V)
Q rr
Reverse Recovery Charge (IS = 11A, dl S/dt = -100A/μs, VR = 640V)
dv
Peak Diode Recovery dv/dt
/dt
MAX
1.2
UNIT
Amps
Volts
ns
550
μC
10
5
6
V/ns
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.80
62
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
0.50
0.5
0.40
Note:
0.30
P DM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7135 Rev B 3-2012
0.80
0.60
0.3
0.20
0
t1
t2
t
0.1
0.10
SINGLE PULSE
0.05
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = 194mH, RG = 25Ω, Peak IL = 2.2A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID 11A di/dt ≤ 700A/μs VR ≤ VDSS TJ≤150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
Microsemi Reserves the right to change, without notice, the specifications and information contained
0.90
0.70
UNIT
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance
APT11N80KC3
30
VGS =15 & 10V
ID, DRAIN CURRENT (AMPERES)
25
6.5V
20
6V
15
5.5V
10
5V
4.5V
5
4V
0
0
5
10
15
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
35
30
TJ = -55°C
TJ = +25°C
25
20
TJ = +125°C
15
10
5
0
0 1 2
3 4
5 6 7
8
9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1.40
1.30
6
4
2
0
25
50
75
100
125
150
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
8
VGS=10V
1.00
VGS=20V
0.90
0.80
0
4
8
12
16
ID, DRAIN CURRENT (AMPERES)
20
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
I = 5.5A
D
2.5
V
GS
= 10V
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
3.0
= 10V @ 5.5A
1.10
1.15
10
GS
1.20
FIGURE 4, TRANSFER CHARACTERISTICS
12
NORMALIZED TO
V
2.0
1.5
1.0
0.5
0
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7135 Rev B 3-2012
ID, DRAIN CURRENT (AMPERES)
40
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, NOT USED
45
APT11N80KC3
10,000
OPERATION HERE
LIMITED BY R
(ON)
DS
Ciss
10
1
1mS
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
I = 11A
D
12
VDS= 160V
VDS= 400V
VDS= 640V
4
0
0
20
40
60
80
100
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
TJ =+25°C
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
tf
30
50
V
DD
R
40
G
= 533V
tr and tf (ns)
td(on) and td(off) (ns)
TJ =+150°C
10
td(off)
= 5Ω
T = 125°C
J
L = 100μH
30
V
DD
20
R
G
= 533V
= 5Ω
T = 125°C
J
L = 100μH
tr
20
10
td(on)
10
5
8
11
14
17
0
20
14
17
20
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
5
8
11
500
500
Eon
400
V
DD
R
300
G
SWITCHING ENERGY (mJ)
SWITCHING ENERGY (mJ)
100
40
60
050-7135 Rev B 3-2012
10
1
70
0
Coss
100
Crss
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
8
C, CAPACITANCE (pF)
100μS
5
1,000
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
33
= 533V
= 5Ω
T = 125°C
J
L = 100μH
EON includes
200
diode reverse recovery.
100
Eoff
Eon
400
300
200
V
Eoff
DD
= 533V
I = 11A
D
T = 125°C
J
L = 100μH
100
EON includes
0
diode reverse recovery.
5
8
11
14
17
20
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT11N80KC3
90%
Gate Voltage
10%
Gate Voltage
TJ = 125 C
td(on)
td(off)
tr
5%
tf
Collector Current
90%
TJ = 125 C
Collector Voltage
90%
10%
5%
0
10%
Collector Voltage
Collector Current
Switching Energy
Switching Energy
APT15DF60B
V CE
IC
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-220 (K) Package Outline
e3 100% Sn Plated
1.39 (.055)
0.51 (.020)
Drai n
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
6.85 (.270)
5.85 (.230)
3.683 (.145)
MAX.
0.50 (.020)
0.41 (.016)
2.92 (.115)
2.04 (.080)
4.82 (.190)
3.56 (.140)
14.73 (.580)
12.70 (.500)
Gate
Drain
Source
1.01 (.040) 3-Plcs.
0.83 (.033)
2.79 (.110)
2.29 (.090)
5.33 (.210)
4.83 (.190)
Dimensions in Millimeters and (Inches)
1.77 (.070) 3-Plcs.
1.15 (.045)
3-2012
12.192 (.480)
9.912 (.390)
4.08 (.161) Dia .
3.54 (.139)
3.42 (.135)
2.54 (.100)
050-7135 Rev B
V DD