BYP 101 FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type VRRM IFRMS trr Package Ordering Code BYP 101 1000V 25A 80ns TO-218 AD C67047-A2072-A2 Maximum Ratings Parameter Symbol Mean forward current IFAV TC = 90 °C, D = 0.5 Values A 15 RMS forward current IFRMS Surge forward current, sine halfwave, aperiodic IFSM Tj = 100 °C, f = 50 Hz 25 70 IFRM Repetitive peak forward current Tj = 100 °C, tp ≤ 10 µs 150 ∫i2dt i 2t value Tj = 100 °C, tp = 10 ms A2s 25 Repetitive peak reverse voltage VRRM 1000 Surge peak reverse voltage VRSM 1000 Power dissipation Ptot TC = 90 °C V W 40 Chip or operating temperature Tj -40 ... + 150 Storage temperature Tstg -40 ... + 150 Thermal resistance, chip case RthJC ≤ 1.5 Thermal resistance, chip-ambient RthJA ≤ 46 DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - Semiconductor Group Unit 1 °C K/W - 40 / 150 / 56 12.96 BYP 101 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Forward voltage drop VF V IF = 15 A, Tj = 25 °C - 2 2.4 IF = 15 A, Tj = 100 °C - 1.7 - Reverse current IR mA VR = 1000 V, Tj = 25 °C - 0.01 0.25 VR = 1000 V, Tj = 100 °C - 0.05 - VR = 1000 V, Tj = 150 °C - 0.15 - AC Characteristics Reverse recovery charge Qrr µC IF = 15 A, VCC = 300 V, diF/dt = -1000 A/µs Tj = 100 °C Peak reverse recovery current - 2.2 - IRRM A IF = 15 A, VCC = 300 V, diF/dt = -1000 A/µs Tj = 100 °C Reverse recovery time - 35 - trr ns IF = 15 A, VCC = 300 V, diF/dt = -1000 A/µs Tj = 100 °C Storage time - 80 - - 45 - tS IF = 15 A, VCC = 300 V, diF/dt = -1000 A/µs Tj = 100 °C Softfaktor S - IF = 15 A, VCC = 300 V, diF/dt = -1000 A/µs Tj = 100 °C Semiconductor Group - 2 0.8 - 12.96 BYP 101 Typ. forward characteristics Typ. reverse current IF = f (VF) IRRM = f (diF / dt) parameter: Tj parameter: VCC = 300 V,IF = 15 A, Tj = 100 °C 10 2 50 A A IF IRRM Tj=100°C 10 1 40 25°C 35 30 25 20 10 0 15 10 5 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VF 0 1 10 3.2 10 2 10 3 A/us diF/dt Typ. reverse recovery charge Qrr = f (diF / dt) parameter: VCC = 300 V,IF = 15 A, Tj = 100 °C 3.0 uC 2.6 Qrr 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1 10 10 Semiconductor Group 2 10 3 A/us diF/dt 3 12.96