Freescale MRF6V2150NB N-channel enhancement-mode lateral mosfet Datasheet

Freescale Semiconductor
Technical Data
Document Number: Order from RF Marketing
Rev. 6, 10/2006
RF Power Field - Effect Transistor
MRF6V2150N
MRF6V2150NB
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for wideband large - signal output and driver applications
with frequencies up to 450 MHz. Devices are unmatched and are suitable for
use in industrial, medical and scientific applications.
PREPRODUCTION
• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,
Pout = 150 Watts
Power Gain — 25.5 dB
Drain Efficiency — 69%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 150 Watts
Output Power
• Integrated ESD Protection
10 - 450 MHz, 150 W, 50 V
LATERAL N - CHANNEL
SINGLE - ENDED
BROADBAND
RF POWER MOSFETs
• Excellent Thermal Stability
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 225°C Capable Plastic Package
• RoHS Compliant
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6V2300N
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6V2300NB
PARTS ARE SINGLE - ENDED
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5 +110
Vdc
Gate - Source Voltage
VGS
- 0.5 + 12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature TBD°C, TBD W CW
Case Temperature TBD°C, TBD W CW
RθJC
TBD
TBD
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product. (Calculator available when part is in production.)
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V2150N MRF6V2150NB
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
TBD (Minimum)
Machine Model (per EIA/JESD22 - A115)
TBD (Minimum)
Charge Device Model (per JESD22 - C101)
TBD (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 110 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
BVDSS
110
—
—
Vdc
IGSS
—
—
10
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
—
2.4
—
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.3
—
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Crss
—
1.54
—
pF
Output Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Coss
—
94
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Ciss
—
163
—
pF
Off Characteristics
Drain - Source Breakdown Voltage
(ID = 75 mA, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 οhm system) VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W, f = 220 MHz, CW
Power Gain
Gps
—
25.5
—
dB
Drain Efficiency
ηD
—
69
—
%
IRL
—
- 17
—
dB
P1dB
—
165
—
W
Input Return Loss
Pout @ 1 dB Compression Point, CW
(f = 220 MHz)
ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
MRF6V2150N MRF6V2150NB
2
RF Device Data
Freescale Semiconductor
80
27
26
70
26
Gps
60
25
24
50
23
40
VDD = 50 Vdc
IDQ = 450 mA
f = 220 MHz
22
ηD
21
30
20
0
50
100
150
Gps, POWER GAIN (dB)
27
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
540 mA
25
450 mA
360 mA
24
405 mA
23
22
20
21
10
20
200
VDD = 50 Vdc
f = 220 MHz
0
50
100
150
200
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 1. Power Gain and Drain Efficiency
versus CW Output Power
Figure 2. Power Gain versus Output Power
−20
55
85_C
−25
Pout, OUTPUT POWER (dBm)
IMD, THIRD ORDER INTERMODULATION
DISTORTION (dBc)
IDQ = 495 mA
−30
IM3 −U
IM3 −L
−35
VDD = 50 Vdc, IDQ = 450 mA
f1 = 220 MHz, f2 = 220.1 MHz
Two −Tone Measurements
−40
−45
0
20
40
60
80
Pout, OUTPUT POWER (WATTS) PEP
Figure 3. Third Order Intermodulation
Distortion versus Output Power
100
−30_C
50
25_C
45
VDD = 50 Vdc
IDQ = 450 mA
f = 220 MHz
40
35
10
15
20
25
30
35
Pin, INPUT POWER (dBm)
Figure 4. Output Power versus Input Power
over Temperature
MRF6V2150N MRF6V2150NB
RF Device Data
Freescale Semiconductor
3
PACKAGE DIMENSIONS
E1
B
A
2X
E3
GATE LEAD
DRAIN LEAD
D
D1
4X
e
4X
b1
aaa M C A
2X
2X
D2
c1
E
H
DATUM
PLANE
F
ZONE J
A
A1
2X
A2
E2
NOTE 7
E5
E4
4
D3
3
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
E5
BOTTOM VIEW
C
SEATING
PLANE
PIN 5
NOTE 8
1
2
CASE 1486 - 03
ISSUE C
TO - 270 WB - 4
PLASTIC
MRF6V2150N
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
e
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.712
.720
.688
.692
.011
.019
.600
−−−
.551
.559
.353
.357
.132
.140
.124
.132
.270
−−−
.346
.350
.025 BSC
.164
.170
.007
.011
.106 BSC
.004
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
18.08
18.29
17.48
17.58
0.28
0.48
15.24
−−−
14
14.2
8.97
9.07
3.35
3.56
3.15
3.35
6.86
−−−
8.79
8.89
0.64 BSC
4.17
4.32
0.18
0.28
2.69 BSC
0.10
DRAIN
DRAIN
GATE
GATE
SOURCE
MRF6V2150N MRF6V2150NB
4
RF Device Data
Freescale Semiconductor
MRF6V2150N MRF6V2150NB
RF Device Data
Freescale Semiconductor
5
MRF6V2150N MRF6V2150NB
6
RF Device Data
Freescale Semiconductor
MRF6V2150N MRF6V2150NB
RF Device Data
Freescale Semiconductor
7
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF6V2150N MRF6V2150NB
Document Number: Order from RF Marketing
8Rev. 6, 10/2006
RF Device Data
Freescale Semiconductor
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