ALSC AS7C33256PFS18B-166TQI 3.3v 256k x 18 pipeline burst synchronous sram Datasheet

AS7C33256PFS18B
December 2004
®
3.3V 256K × 18 pipeline burst synchronous SRAM
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Organization: 262,144 words × 18 bits
Fast clock speeds to 200 MHz
Fast clock to data access: 3.0/3.5/4.0 ns
Fast OE access time: 3.0/3.5/4.0 ns
Fully synchronous register-to-register operation
Single-cycle deselect
Asynchronous output enable control
Available in 100-pin TQFP package
Individual byte write and global write
Multiple chip enables for easy expansion
Linear or interleaved burst control
Snooze mode for reduced power-standby
Common data inputs and data outputs
3.3V core power supply
2.5V or 3.3V I/O operation with separate VDDQ
Logic block diagram
LBO
CLK
CS
CLR
CLK
ADV
ADSC
ADSP
18
A[17:0]
Burst logic
Q
D
CS Address
register
18
256K × 18
Memory
array
18
16
CLK
18
GWE
BWb
D DQb
BWE
CLK
D DQa Q
18
Q
Byte Write
registers
2
Byte Write
registers
BWa
CLK
CE0
CE1
CE2
D
Enable
register
OE
Q
Output
registers
CE
CLK
ZZ
Power
down
CLK
Input
registers
CLK
D Enable Q
delay
register
CLK
OE
18
DQ [a,b]
Selection guide
–200
–166
–133
Units
5
6
7.5
ns
Maximum clock frequency
200
166
133
MHz
Maximum clock access time
3.0
3.5
4
ns
Maximum operating current
375
350
325
mA
Maximum standby current
130
100
90
mA
Maximum CMOS standby current (DC)
30
30
30
mA
Minimum cycle time
12/10/04; v.1.7
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Copyright © Alliance Semiconductor. All rights reserved.
AS7C33256PFS18B
®
4 Mb Synchronous SRAM products list1,2
Org
256KX18
Part Number
AS7C33256PFS18B
Mode
PL-SCD
Speed
200/166/133 MHz
128KX32
128KX36
256KX18
128KX32
128KX36
256KX18
128KX32
128KX36
256KX18
128KX32
128KX36
256KX18
128KX32
128KX36
AS7C33128PFS32B
AS7C33128PFS36B
AS7C33256PFD18B
AS7C33128PFD32B
AS7C33128PFD36B
AS7C33256FT18B
AS7C33128FT32B
AS7C33128FT36B
AS7C33256NTD18B
AS7C33128NTD32B
AS7C33128NTD36B
AS7C33256NTF18B
AS7C33128NTF32B
AS7C33128NTF36B
PL-SCD
PL-SCD
PL-DCD
PL-DCD
PL-DCD
FT
FT
FT
NTD-PL
NTD-PL
NTD-PL
NTD-FT
NTD-FT
NTD-FT
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
6.5/7.5/8.0/10 ns
6.5/7.5/8.0/10 ns
6.5/7.5/8.0/10 ns
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
6.5/7.5/8.0/10 ns
6.5/7.5/8.0/10 ns
6.5/7.5/8.0/10 ns
1 Core Power Supply: VDD = 3.3V + 0.165V
2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O
VDDQ = 2.5V + 0.125V for 2.5V I/O
PL-SCD
PL-DCD
FT
NTD1-PL
NTD-FT
:
:
:
:
:
Pipelined Burst Synchronous SRAM - Single Cycle Deselect
Pipelined Burst Synchronous SRAM - Double Cycle Deselect
Flow-through Burst Synchronous SRAM
Pipelined Burst Synchronous SRAM with NTDTM
Flow-through Burst Synchronous SRAM with NTDTM
1. NTD: No Turnaround Delay. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property
of their respective owners.
12/10/04; v.1.7
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P. 2 of 19
AS7C33256PFS18B
®
TQFP 14 × 20mm
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A
NC
NC
VDDQ
VSSQ
NC
DQpa
DQa7
DQa6
VSSQ
VDDQ
DQa5
DQa4
VSS
NC
VDD
ZZ
DQa3
DQa2
VDDQ
VSSQ
DQa1
DQa0
NC
NC
VSSQ
VDDQ
NC
NC
NC
LBO
A
A
A
A
A1
A0
NC
NC
VSS
VDD
NC
NC
A
A
A
A
A
A
A
VDDQ
VSSQ
NC
NC
DQb0
DQb1
VSSQ
VDDQ
DQb2
DQb3
NC
VDD
NC
VSS
DQb4
DQb5
VDDQ
VSSQ
DQb6
DQb7
DQpb
NC
VSSQ
VDDQ
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
NC
NC
NC
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
A
A
CE0
CE1
NC
NC
BWb
BWa
CE2
VDD
VSS
CLK
GWE
BWE
OE
ADSC
ADSP
ADV
A
A
Pin arrangement
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AS7C33256PFS18B
®
Functional description
The AS7C33256PFS18B is a high performance CMOS 4 Mbit synchronous Static Random Access Memory (SRAM) devices
organized as 262,144 words × 18 bits and incorporate a pipeline for highest frequency on any given technology.
Timing for this device is compatible with existing Pentium® synchronous cache specifications. This architecture is suited for
ASIC, DSP, and PowerPC™1-based systems in computing, datacom, instrumentation, and telecommunications systems.
Fast cycle times of 5.0/6.0/7.5 ns with clock access times (tCD) of 3.0/3.5/4.0 ns enable 200, 166 and 133 MHz bus
frequencies. Three chip enable inputs permit easy memory expansion. Burst operation is initiated in one of two ways: the
controller address strobe (ADSC), or the processor address strobe (ADSP). The burst advance pin (ADV) allows subsequent
internally generated burst addresses.
Read cycles are initiated with ADSP (regardless of WE and ADSC) using the new external address clocked into the on-chip
address register. When ADSP is sampled LOW, the chip enables are sampled active, and the output buffer is enabled with OE.
In a read operation the data accessed by the current address, registered in the address registers by the positive edge of CLK, are
carried to the data-out registers and driven on the output pins on the next positive edge of CLK. ADV is ignored on the clock
edge that samples ADSP asserted but is sampled on all subsequent clock edges. Address is incremented internally for the next
access of the burst when ADV is sampled LOW and both address strobes are HIGH. Burst mode is selectable with the LBO
input. With LBO unconnected or driven HIGH, burst operations use a Pentium® count sequence. With LBO driven LOW the
device uses a linear count sequence suitable for PowerPC™ and many other applications.
Write cycles are performed by disabling the output buffers with OE and asserting a write command. A global write enable
GWE writes all 18 bits regardless of the state of individual BW[a:b] inputs. Alternately, when GWE is HIGH, one or more
bytes may be written by asserting BWE and the appropriate individual byte BWn signal(s).
BWn is ignored on the clock edge that samples ADSP LOW, but is sampled on all subsequent clock edges. Output buffers are
disabled when BWn is sampled LOW (regardless of OE). Data is clocked into the data input register when BWn is sampled
LOW. Address is incremented internally to the next burst address if BWn and ADV are sampled LOW.
Read or write cycles may also be initiated with ADSC instead of ADSP. The differences between cycles initiated with ADSC
and ADSP are as follows:
• ADSP must be sampled HIGH when ADSC is sampled LOW to initiate a cycle with ADSC.
• WE signals are sampled on the clock edge that samples ADSC LOW (and ADSP HIGH).
• Master chip select CE0 blocks ADSP, but not ADSC.
The AS7C33256PFS18B operates from a 3.3V supply. I/Os use a separate power supply that can operate at 2.5V or 3.3V.
These devices are available in a 100-pin 14×20 mm TQFP package.
TQFP capacitance
Parameter
Input capacitance
I/O capacitance
Symbol
Test conditions
Min
Max
Unit
CIN*
CI/O*
VIN = 0V
-
5
pF
VOUT = 0V
-
7
pF
* Guaranteed not tested
TQFP thermal resistance
Description
Thermal resistance
(junction to ambient)1
Thermal resistance
(junction to top of case)1
Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance,
per EIA/JESD51
Symbol
Typical
Units
1–layer
θJA
40
°C/W
4–layer
θJA
22
°C/W
θJC
8
°C/W
1 This parameter is sampled
1. PowerPC™ is a trademark International Business Machines Corporation
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AS7C33256PFS18B
®
Signal descriptions
Signal
CLK
I/O
I
Properties
CLOCK
A,A0,A1
I
SYNC
DQ[a,b]
I/O
SYNC
CE0
I
SYNC
CE1, CE2
I
SYNC
ADSP
I
SYNC
ADSC
I
SYNC
ADV
I
SYNC
GWE
I
SYNC
BWE
I
SYNC
BW[a,b]
I
SYNC
OE
I
ASYNC
LBO
I
STATIC
ZZ
I
ASYNC
NC
-
-
Description
Clock. All inputs except OE, ZZ, LBO are synchronous to this clock.
Address. Sampled when all chip enables are active and ADSC or ADSP are
asserted.
Data. Driven as output when the chip is enabled and OE is active.
Master chip enable. Sampled on clock edges when ADSP or ADSC is active.
When CE0 is inactive, ADSP is blocked. Refer to the Synchronous Truth Table for
more information.
Synchronous chip enables. Active HIGH and active LOW, respectively. Sampled
on clock edges when ADSC is active or when CE0 and ADSP are active.
Address strobe (processor). Asserted LOW to load a new address or to enter
standby mode.
Address strobe (controller). Asserted LOW to load a new address or to enter
standby mode.
Burst advance. Asserted LOW to continue burst read/write.
Global write enable. Asserted LOW to write all 18 bits. When HIGH, BWE and
BW[a,b] control write enable.
Byte write enable. Asserted LOW with GWE = HIGH to enable effect of BW[a,b]
inputs.
Write enables. Used to control write of individual bytes when GWE = HIGH and
BWE = LOW. If any of BW[a,b] is active with GWE = HIGH and BWE = LOW
the cycle is a write cycle. If all BW[a,b] are inactive, the cycle is a read cycle.
Asynchronous output enable. I/O pins are driven when OE is active and the chip is
in read mode.
Selects Burst mode. When tied to VDD or left floating, device follows interleaved
Burst order. When driven Low, device follows linear Burst order. This signal is
internally pulled High.
Snooze. Places device in low power mode; data is retained. Connect to GND if
unused.
No connect
Snooze Mode
SNOOZE MODE is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of
SNOOZE MODE is dictated by the length of time the ZZ is in a High state.
The ZZ pin is an asynchronous, active high input that causes the device to enter SNOOZE MODE.
When the ZZ pin becomes a logic High, ISB2 is guaranteed after the time tZZI is met. After entering SNOOZE MODE, all inputs except ZZ
is disabled and all outputs go to High-Z. Any operation pending when entering SNOOZE MODE is not guaranteed to successfully complete.
Therefore, SNOOZE MODE (READ or WRITE) must not be initiated until valid pending operations are completed. Similarly, when exiting
SNOOZE MODE during tPUS, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE
MODE.
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AS7C33256PFS18B
®
Write enable truth table (per byte)
Function
GWE
L
H
H
H
H
H
Write All Bytes
Write Byte a
Write Byte b
Read
BWE
X
L
L
L
H
L
BWa
X
L
L
H
X
H
BWb
X
L
H
L
X
H
Key: X = don’t care, L = low, H = high, n = a, b; BWE, BWn = internal write signal.
Asynchronous Truth Table
Operation
Snooze mode
ZZ
H
L
L
L
L
Read
Write
Deselected
OE
X
L
H
X
X
I/O Status
High-Z
Dout
High-Z
Din, High-Z
High-Z
Notes:
1. X means “Don’t Care”
2. ZZ pin is pulled down internally
3. For write cycles that follows read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur.
4. Snooze mode means power down state of which stand-by current does not depend on cycle times
5. Deselected means power down state of which stand-by current depends on cycle times
Burst sequence table
Interleaved burst address (LBO = 1)
A1 A0
1st
A1 A0
A1 A0
Linear burst address (LBO = 0)
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
Address
00
01
10
11
1st
Address
00
01
10
11
2nd Address
01
00
11
10
2nd Address
01
10
11
00
rd
rd
3 Address
10
11
00
01
3 Address
10
11
00
01
4th Address
11
10
01
00
4th Address
11
10
01
10
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AS7C33256PFS18B
®
Synchronous truth table[4]
CE01
CE1
CE2
ADSP
ADSC
H
L
L
L
L
L
L
L
L
X
X
X
X
H
H
H
H
L
X
H
X
H
X
L
L
X
X
H
H
H
H
X
X
X
X
X
X
X
X
H
X
X
X
X
X
X
X
H
H
L
L
L
L
X
X
X
X
X
X
X
X
L
X
X
X
X
X
L
H
L
H
L
L
H
H
H
H
H
H
X
X
X
X
H
H
X
H
X
L
X
L
X
L
X
X
L
L
H
H
H
H
H
H
H
H
L
H
H
H
H
ADV WRITE[2]
X
X
X
X
X
X
X
X
X
L
L
H
H
L
L
H
H
X
L
L
H
H
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
OE
Address accessed
CLK
Operation
DQ
X
X
X
X
X
L
H
L
H
L
H
L
H
L
H
L
H
X
X
X
X
X
NA
NA
NA
NA
NA
External
External
External
External
Next
Next
Current
Current
Next
Next
Current
Current
External
Next
Next
Current
Current
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
Deselect
Deselect
Deselect
Deselect
Deselect
Begin read
Begin read
Begin read
Begin read
Continue read
Continue read
Suspend read
Suspend read
Continue read
Continue read
Suspend read
Suspend read
Begin write
Continue write
Continue write
Suspend write
Suspend write
Hi−Z
Hi−Z
Hi−Z
Hi−Z
Hi−Z
Q
Hi−Z
Q
Hi−Z
Q
Hi−Z
Q
Hi−Z
Q
Hi−Z
Q
Hi−Z
D3
D
D
D
D
1 X = don’t care, L = low, H = high
2 For WRITE, L means any one or more byte write enable signals (BWa or BWb) and BWE are LOW or GWE is LOW. WRITE = HIGH for all BWx, BWE,
GWE HIGH. See "Write enable truth table (per byte)," on page 7 for more information.
3 For write operation following a READ, OE must be high before the input data set up time and held high throughout the input hold time.
4. ZZ pin is always Low.
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AS7C33256PFS18B
®
Absolute maximum ratings
Parameter
Symbol
Min
Max
Unit
VDD, VDDQ
–0.5
+4.6
V
Input voltage relative to GND (input pins)
VIN
–0.5
VDD + 0.5
V
Input voltage relative to GND (I/O pins)
VIN
–0.5
VDDQ + 0.5
V
Pd
–
1.8
W
Short circuit output current
IOUT
–
20
mA
Storage temperature
Tstg
–65
+150
o
+135
oC
Power supply voltage relative to GND
Power dissipation
Temperature under bias
Tbias
–65
C
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
3.135
3.3
3.465
V
Supply voltage for I/O
VDDQ
3.135
3.3
3.465
V
Vss
0
0
0
V
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
3.135
3.3
3.465
V
Supply voltage for I/O
VDDQ
2.375
2.5
2.625
V
Vss
0
0
0
V
Ground supply
Recommended operating conditions at 2.5V I/O
Parameter
Ground supply
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AS7C33256PFS18B
®
DC electrical characteristics for 3.3V I/O operation
Parameter
Sym
Conditions
Min
Max
Unit
current†
|ILI|
VDD = Max, 0V < VIN < VDD
-2
2
µA
Output leakage current
|ILO|
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
-2
2
µA
Input high (logic 1) voltage
VIH
Address and control pins
2*
VDD+0.3
I/O pins
2*
VDDQ+0.3
Input low (logic 0) voltage
VIL
Address and control pins
-0.3**
0.8
I/O pins
-0.5**
0.8
Output high voltage
VOH
IOH = –4 mA, VDDQ = 3.135V
2.4
–
V
Output low voltage
VOL
IOL = 8 mA, VDDQ = 3.465V
–
0.4
V
Input leakage
V
V
DC electrical characteristics for 2.5V I/O operation
Parameter
Sym
Conditions
Min
Max
Unit
current†
|ILI|
VDD = Max, 0V < VIN < VDD
-2
2
µA
Output leakage current
|ILO|
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
-2
2
µA
Input high (logic 1) voltage
VIH
Address and control pins
1.7*
VDD+0.3
V
I/O pins
1.7*
VDDQ+0.3
V
Input low (logic 0) voltage
VIL
Address and control pins
-0.3**
0.7
V
I/O pins
-0.3**
0.7
V
Output high voltage
VOH
IOH = –4 mA, VDDQ = 2.375V
1.7
–
V
Output low voltage
VOL
IOL = 8 mA, VDDQ = 2.625V
–
0.7
V
Input leakage
† LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10 µA.
*
VIH max < VDD +1.5V for pulse width less than 0.2 X tCYC
**V
IL min
= -1.5 for pulse width less than 0.2 X tCYC
IDD operating conditions and maximum limits
Parameter
Operating power supply current1
Sym
ICC
ISB
Standby power supply current
Conditions
CE0 < VIL, CE1 > VIH, CE2 < VIL, f = fMax,
IOUT = 0 mA, ZZ < VIL
All VIN ≤ 0.2V or > VDD – 0.2V, Deselected,
f = fMax, ZZ < VIL
-200
-166
-133
Unit
375
350
325
mA
130
100
90
ISB1
Deselected, f = 0, ZZ < 0.2V,
all VIN ≤ 0.2V or ≥ VDD – 0.2V
30
30
30
ISB2
Deselected, f = fMax, ZZ ≥ VDD – 0.2V,
all VIN ≤ VIL or ≥ VIH
30
30
30
mA
1 ICC given with no output loading. ICC increases with faster cycle times and greater output loading.
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AS7C33256PFS18B
®
Timing characteristics over operating range
–200
Parameter
–166
–133
Notes1
Sym
Min
Max
Min
Max
Min
Max
Unit
Clock frequency
fMax
–
200
–
166
–
133
MHz
Cycle time
tCYC
5
–
6
–
7.5
–
ns
Clock access time
tCD
–
3.0
–
3.5
–
4.0
ns
Output enable LOW to data valid
tOE
–
3.0
–
3.5
–
4.0
ns
Clock HIGH to output Low Z
tLZC
0
–
0
–
0
–
ns
2,3,4
Data output invalid from clock HIGH
tOH
1.5
–
1.5
–
1.5
–
ns
2
Output enable LOW to output Low Z
tLZOE
0
–
0
–
0
–
ns
2,3,4
Output enable HIGH to output High Z
tHZOE
–
3.0
–
3.5
–
4.0
ns
2,3,4
Clock HIGH to output High Z
tHZC
–
3.0
–
3.5
–
4.0
ns
2,3,4
tOHOE
0
–
0
–
0
–
ns
Clock HIGH pulse width
tCH
2.0
–
2.4
–
2.5
–
ns
5
Clock LOW pulse width
tCL
2.3
–
2.4
–
2.5
–
ns
5
Address setup to clock HIGH
tAS
1.4
–
1.5
–
1.5
–
ns
6
Data setup to clock HIGH
tDS
1.4
–
1.5
–
1.5
–
ns
6
Write setup to clock HIGH
tWS
1.4
–
1.5
–
1.5
–
ns
6,7
Chip select setup to clock HIGH
tCSS
1.4
–
1.5
–
1.5
–
ns
6,8
Address hold from clock HIGH
tAH
0.4
–
0.5
–
0.5
–
ns
6
Data hold from clock HIGH
tDH
0.4
–
0.5
–
0.5
–
ns
6
Write hold from clock HIGH
tWH
0.4
–
0.5
–
0.5
–
ns
6,7
Chip select hold from clock HIGH
tCSH
0.4
–
0.5
–
0.5
–
ns
6,8
ADV setup to clock HIGH
tADVS
1.4
–
1.5
–
1.5
–
ns
6
ADSP setup to clock HIGH
tADSPS
1.4
–
1.5
–
1.5
–
ns
6
ADSC setup to clock HIGH
tADSCS
1.4
–
1.5
–
1.5
–
ns
6
ADV hold from clock HIGH
tADVH
0.4
–
0.5
–
0.5
–
ns
6
ADSP hold from clock HIGH
tADSPH
0.4
–
0.5
–
0.5
–
ns
6
ADSC hold from clock HIGH
tADSCH
0.4
–
0.5
–
0.5
–
ns
6
Output enable HIGH to invalid output
1 See “Notes” on page 16.
Snooze Mode Electrical Characteristics
Description
Current during Snooze Mode
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to SNOOZE current
ZZ inactive to exit SNOOZE current
12/10/04; v.1.7
Conditions
Symbol
ZZ > VIH
ISB2
tPDS
tPUS
tZZI
tRZZI
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Min
Max
Units
30
mA
cycle
cycle
cycle
2
2
2
0
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Key to switching waveforms
Rising input
Falling input
don’t care
Undefined
Timing waveform of read cycle
tCYC
tCL
tCH
CLK
tADSPS
tADSPH
ADSP
tADSCS
tADSCH
ADSC
LOAD NEW ADDRESS
tAH
tAS
A1
Address
A2
tWS
A3
tWH
GWE, BWE
tCSS
tCSH
CE0, CE2
CE1
tADVS
tADVH
ADV
ADV inserts wait states
OE
tOE
tHZOE
tLZOE
Dout
Q(A1)
Read
Q(A1)
Suspend
Read
Q(A1)
Read
Q(A2)
tCD
tHZC
tOH
Q(A2)
Q(A2Ý01)
Q(A2Ý10)
Q(A2Ý11)
Q(A3)
Q(A3Ý01)
Q(A3Ý10)
Burst
Burst
Read
Suspend
Burst
Burst
Burst
Burst
Read
Read
Q(A3)
Read
Read
Read
Read
Read
Q(A 2Ý01) Q(A 2Ý10) Q(A 2Ý10) Q(A 2Ý11)
Q(A 3Ý01) Q(A 3Ý10) Q(A 3Ý11)
DSEL
Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low. BW[a:d] is don’t care.
12/10/04; v.1.7
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Timing waveform of write cycle
tCYC
tCL
tCH
CLK
tADSPS
tADSPH
ADSP
tADSCS
tADSCH
ADSC
ADSC LOADS NEW ADDRESS
tAS
tAH
A1
Address
A3
A2
tWS
BWE
tWH
BW[a:b]
tCSS
tCSH
CE0, CE2
CE1
ADV SUSPENDS BURST
tADVS
tADVH
tDS
tDH
ADV
OE
Din
D(A1)
Read
Q(A1)
Suspend
Write
D(A1)
D(A2)
Read
Q(A2)
D(A2Ý01)
Suspend
Write
D(A 2)
D(A2Ý01)
D(A2Ý10)
D(A2Ý11)
D(A3)
ADV
ADV
ADV
Suspend
Burst
Burst
Burst
Write
Write
Write
D(A 2Ý01) Write
D(A 2Ý01)
D(A 2Ý10) D(A 2Ý11)
D(A3Ý01)
Write
D(A 3)
D(A3Ý10)
Burst
Write
D(A 3Ý01)
ADV
Burst
Write
D(A 3Ý10)
Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low.
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Timing waveform of read/write cycle (ADSP Controlled; ADSC High)
tCYC
tCL
tCH
CLK
tADSPH
tADSPS
ADSP
tAH
tAS
A2
A1
Address
A3
tWH
tWS
GWE
CE0, CE2
CE1
tADVH
tADVS
ADV
OE
tDS tDH
Din
D(A2)
tOE
tCD
tLZC
Dout
DSEL
Read
Q(A1)
tHZOE
Q(A1)
Suspend
Read
Q(A1)
tOH
tLZOE
Q(A3)
Read
Q(A2)
Suspend
Write
D(A 2)
Read
Q(A3)
ADV
Burst
Read
Q(A 3Ý01)
Q(A3Ý01)
ADV
Burst
Read
Q(A 3Ý10)
Q(A3Ý10)
Q(A3Ý11)
ADV
Burst
Read
Q(A 3Ý11)
Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low.
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Timing waveform of read/write cycle (ADSC controlled, ADSP = HIGH)
tCYC
tCL
tCH
CLK
tADSCS
tADSCH
ADSC
tAS
A1
ADDRESS
A5
A4
A3
A2
A7
A6
tWS
tAH
A8
A9
tWH
GWE
tCSS
tCSH
CE0,CE2
CE1
ADV
OE
tOE
tLZOE
Q(A1)
Dout
tLZOE
tHZOE
Q(A2)
Q(A3)
Q(A8)
Q(A4)
D(A5)
READ
Q(A1)
12/10/04; v.1.7
READ
Q(A2)
READ
Q(A3)
READ
Q(A4)
Q(A9)
tDH
tDS
Din
tOH
D(A6)
D(A7)
WRITE WRITE WRITE
D(A6) D(A7)
D(A5)
Alliance Semiconductor
READ
Q(A8)
READ
Q(A9)
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Timing waveform of power down cycle
tCH
tCYC
tCL
CLK
tADSPS
tADSPS
ADSP
ADSC
A2
A1
ADDRESS
tWH
tWS
GWE
tCSS
tCSH
CE0,CE2
CE1
ADV
OE
tOE
Din
tLZOE
tHZOE
D(A2)
D(A2(Ý01))
tHZC
Dout
Q(A1)
tPUS
tPDS
ZZ Recovery Cycle
ZZ
Normal Operation Mode
ZZ Setup Cycle
tZZI
tRZZI
Isupply
ISB2
READ SUSPEND
Q(A1) READ
Q(A1)
12/10/04; v.1.7
Sleep
State
Alliance Semiconductor
READ SUSPEND CONQ(A2) WRITE TINUE
D(A2) WRITE
D(A2 Ý01
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AC test conditions
• Output load: see Figure B, except for tLZC, tLZOE, tHZOE, tHZC, see Figure C.
• Input pulse level: GND to 3V. See Figure A.
Thevenin equivalent:
• Input rise and fall time (measured at 0.3V and 2.7V): 2 ns. See Figure A.
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O
• Input and output timing reference levels: 1.5V.
+3.0V
90%
10%
GND
90%
10%
Figure A: Input waveform
DOUT
Z0 = 50Ω
50Ω
DOUT
VL = 1.5V
for 3.3V I/O; 353Ω / 1538Ω
30 pF* = V
DDQ/2
for 2.5V I/O
Figure B: Output load (A)
319Ω / 1667Ω
5 pF*
GND *including scope
and jig capacitance
Figure C: Output load (B)
Notes
1 For test conditions, see AC Test Conditions, Figures A, B, C.
2 This parameter measured with output load condition in Figure C.
3 This parameter is sampled, but not 100% tested.
4 tHZOE is less than tLZOE; and tHZC is less than tLZC at any given temperature and voltage.
5 tCH measured as HIGH above VIH and tCL measured as LOW below VIL.
6 This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs
must meet the setup and hold times for all rising edges of CLK when chip is enabled.
7 Write refers to GWE, BWE, BW[a,b].
8 Chip select refers to CE0, CE1, CE2
12/10/04; v.1.7
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Package Dimensions
100-pin quad flat pack (TQFP)
Hd
D
L1
L
b
A1 A2
α
e
He E
TQFP
Min
Max
A1
0.05
0.15
A2
1.35
1.45
b
0.22
0.38
c
0.09
0.20
D
13.90
14.10
E
19.90
20.10
e
0.65 nominal
Hd
15.85
16.15
He
21.80
22.20
L
0.45
0.75
L1
α
1.00 nominal
0°
7°
Dimensions in millimeters
12/10/04; v.1.7
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Ordering information
Package
TQFP
TQFP
Width
x18
x18
–200
–166
AS7C33256PFS18B-200TQC AS7C33256PFS18B-166TQC
AS7C33256PFS18B-200TQI AS7C33256PFS18B-166TQI
–133
AS7C33256PFS18B-133TQC
AS7C33256PFS18B-133TQI
Note: Add suffix ‘N’ to the above part numbers for lead free parts (Ex AS7C33256PFS18B-166TQCN)
Part numbering guide
AS7C
1
33
2
256
3
PF
4
S
5
18
6
B
7
–XXX
8
TQ
9
C/I
10
X
11
1. Alliance Semiconductor SRAM Prefix
2.Operating voltage: 33 = 3.3V
3.Organization: 256 = 256K
4.Pipeline mode
5.Deselect: S = Single cycle deselect
6.Organization: 18 = x18
7.Production version: B= product revision
8.Clock speed (MHz)
9.Package type: TQ=TQFP
10.Operating temperature: C=Commercial (0° C to 70° C); I=Industrial (-40° C to 85° C)
11.N=Lead Free Part
12/10/04; v.1.7
Alliance Semiconductor
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®
®
Alliance Semiconductor Corporation
2575, Augustine Drive,
Santa Clara, CA 95054
Copyright © Alliance Semiconductor
All Rights Reserved
Part Number: AS7C33256PFS18B
Document Version: v.1.7
Tel: 408 - 855 - 4900
Fax: 408 - 855 - 4999
www.alsc.com
© Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or
registered trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right
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