Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH266 General Description Features The AH266 is an integrated Hall sensor with output driver designed for electronic commutation of brushless DC motor applications. The device includes an onchip Hall sensor for magnetic sensing, an amplifier that amplifies the Hall voltage, a Schmitt trigger to provide switching hysteresis for noise rejection and two complementary darlington open-collector drivers for sinking large load current. It also includes an internal band-gap regulator which is used to provide bias voltage for internal circuits and allows a wide operating supply voltage ranges. · · · · · · · · On-Chip Hall Sensor 4V to 30V Supply Voltage 400mA (avg) Output Sink Current Build in Protection Diode for Reverse Power Connecting -20oC to 85oC Operating Temperature Low Profile TO-94 (SIP-4L) Package Build in Over Temperature Protection Function ESD Rating: 300V(Machine Model) Applications Placing the device in a variable magnetic field, if the magnetic flux density is larger than threshold BOP, the pin DO will be turned low (on) and pin DOB will be turned high (off). This output state is held until the magnetic flux density reverses and falls below BRP, then causes DO to be turned high (off) and DOB turned low (on). · · · · 12V/24V Dual-Coil Brushless DC Motor/Fan Power Supply and Switchboard Communications Facilities Industrial Equipment AH266 is available in TO-94 (SIP-4L) package. TO-94 Figure 1. Package Type of AH266 Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH266 Pin Configuration Z4 Package (TO-94) 4 GND 3 2 DOB DO 1 VCC Figure 2. Pin Configuration of AH266 (Top View) Pin Description Pin Number Pin Name Function 1 VCC Supply voltage 2 DO Output 1 3 DOB Output 2 4 GND Ground Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH266 Functional Block Diagram VCC 1 2 DO Over Temperature Protection Regulator 3 Hall Sensor Schmitt Trigger Amplifier DOB Output Driver 4 GND Figure 3. Functional Block Diagram of AH266 Ordering Information AH266 - Circuit Type E1: Lead Free Package Z4: TO-94 (SIP-4L) Magnetic Characteristics A: 10 to 70Gauss B: 100Gauss Package Temperature Range TO-94 -20 to 85 oC Part Number Marking ID Packing Type AH266Z4-AE1 AH266Z4-E1 Bulk AH266Z4-BE1 AH266Z4-E1 Bulk BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH266 Absolute Maximum Ratings (Note 1) (TA=25oC) Parameter Symbol Value Unit Supply Voltage VCC 30 V Reverse Protection Voltage VRCC -30 V B Unlimited Gauss 400 (Note 2) mA 600 mA 800 mA PD 550 mW Die to atmosphere θJA 227 oC/W Die to package case θJC 49 oC/W TSTG -50 to 150 oC 300 V Magnetic Flux Density Continuous Output Current IO Hold Peak (Start up) Power Dissipation Thermal Resistance Storage Temperature ESD (Machine Model) Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect device reliability. Note 2: Continuos output current is 200mA at 85oC. Recommended Operating Conditions Parameter Supply Voltage Operating Ambient Temperature Symbol Min Max VCC 5 28 V 85 o TA -20 Feb. 2007 Rev. 1. 1 Unit C BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH266 Electrical Characteristics (TA=25oC, VCC=24V, unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit VCC=5V, IO=100mA 0.8 1.1 V Output Saturation Voltage VSAT1 IO=500mA 1.1 1.5 V Output Saturation Voltage VSAT2 IO=300mA 0.9 1.25 V Low Supply Voltage VCE Output Leakage Current IOL VDO, VDOB=24V 0.1 10 µA Supply Current ICC VCC=24V, Output Open 3.5 6 mA tr RL=820Ω, CL=20pF 3.0 10 µs Output Fall Time tf RL=820Ω, CL=20pF 0.3 1.5 µs Switch Time Differential ∆t RL=820Ω, CL=20pF 3.0 10 µs Output Rise Time Output Zener Breakdown Voltage VZO 61 V Magnetic Characteristics (TA=25oC) Parameter Symbol BOP Operating Point Grade Min A 10 Typ B BRP Releasing Point Hysteresis A -70 B -100 Max Unit 70 Gauss 100 Gauss -10 Gauss Gauss 80 BHYS Gauss VDO (V) Off-state High BHYS Turn off Turn on Low VSAT On-state N BRP 0 BOP S Magnetic Flux Density (Gauss) Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH266 Magnetic Characteristics (Continued) +24V AH266 S VCC Marking Side DO DOB GND 1 2 4 3 DO (VOUT1) R1 820Ω R2 N DOB (VOUT2) 820Ω C1 C2 20pF 20pF Figure 4. Basic Test Circuit DO (V) DOB (V) 16 16 VCC 14 14 12 12 10 10 8 8 6 6 4 4 2 -40 -20 0 VSAT 20 2 VSAT 40 -40 Magnetic Flux Density B (Gauss) VCC -20 0 20 40 Magnetic Flux Density B (Gauss) Figure 5. VDO vs. Magnetic Flux Density Figure 6. VDOB vs. Magnetic Flux Density Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH266 Typical Performance Characteristics 80 4.0 3.6 60 3.2 o TA=25 C BOP/BRP/BHYS (GS) ICC (mA) 2.8 2.4 2.0 1.6 1.2 0.8 40 BOP BRP BHYS 20 0 o TA=25 C -20 0.4 -40 0.0 0 5 10 15 20 5 25 10 15 20 25 VCC (V) VCC (V) Figure 7. ICC vs. VCC Figure 8. BOP/BRP/BHYS vs. VCC 800 80 60 PD (mW) BOP/BRP/BHYS (GS) 600 40 BOP BRP BHYS VCC=24V 20 0 400 200 -20 -40 -20 0 20 40 60 0 -25 80 0 25 50 75 100 125 150 o o TA ( C) TA ( C) Figure 9. BOP/BRP/BHYS vs. Ambient Temperature Figure 10. PD vs. Ambient Temperature Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH266 Typical Performance Characteristics (Continued) 6 1200 VCC=4V VCC=14V VCC=24V 5 1100 VCC=24V IO=300mA 1000 VSAT (mV) ICC (mA) 4 3 900 800 2 700 1 600 0 -20 0 20 40 60 500 -20 80 o 0 20 40 60 80 o TA ( C) TA ( C) Figure 11. ICC vs. Ambient Temperature Figure 12. VSAT vs. Ambient Temperature 500 450 o 400 TA=25 C IO(max) (mA) 350 300 250 200 150 100 50 0 5 10 15 20 25 VCC (V) Figure 13. IO(max) vs. VCC Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH266 Typical Applications D1 AH266 COIL1 VCC DO 1 2 COIL2 DOB GND 4 3 VCC Z1 Z2 Z1, Z2: Zener diode, 2*VCC≤VZ≤60V Figure 14. Typical Application Circuit with D1 Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 9 Data Sheet HIGH VOLTAGE HALL EFFECT LATCH AH266 Mechanical Dimensions TO-94 0.500(0.020) 0.700(0.028) 3.780(0.149) 4.080(0.161) Unit: mm(inch) 45°TYP 1.400(0.055) 1.800(0.071) 0.700(0.028) 0.900(0.035) 4.980(0.196) 5.280(0.208) 0.360(0.014) 0.510(0.020) 1.850(0.073) 1.250(0.050) Hall Sensor Location 0.380(0.015) 0.550(0.022) 0.360(0.014) 0.500(0.020) 14.900(0.587) 15.300(0.602) 1.270(0.050) TYP 3.710(0.146) 3.910(0.154) Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 10 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788