BCD AH266 High voltage hall effect latch Datasheet

Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH266
General Description
Features
The AH266 is an integrated Hall sensor with output
driver designed for electronic commutation of brushless DC motor applications. The device includes an onchip Hall sensor for magnetic sensing, an amplifier
that amplifies the Hall voltage, a Schmitt trigger to
provide switching hysteresis for noise rejection and
two complementary darlington open-collector drivers
for sinking large load current. It also includes an internal band-gap regulator which is used to provide bias
voltage for internal circuits and allows a wide
operating supply voltage ranges.
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·
·
·
·
·
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On-Chip Hall Sensor
4V to 30V Supply Voltage
400mA (avg) Output Sink Current
Build in Protection Diode for Reverse Power
Connecting
-20oC to 85oC Operating Temperature
Low Profile TO-94 (SIP-4L) Package
Build in Over Temperature Protection Function
ESD Rating: 300V(Machine Model)
Applications
Placing the device in a variable magnetic field, if the
magnetic flux density is larger than threshold BOP, the
pin DO will be turned low (on) and pin DOB will be
turned high (off). This output state is held until the
magnetic flux density reverses and falls below BRP,
then causes DO to be turned high (off) and DOB
turned low (on).
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12V/24V Dual-Coil Brushless DC Motor/Fan
Power Supply and Switchboard
Communications Facilities
Industrial Equipment
AH266 is available in TO-94 (SIP-4L) package.
TO-94
Figure 1. Package Type of AH266
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH266
Pin Configuration
Z4 Package
(TO-94)
4
GND
3
2
DOB
DO
1
VCC
Figure 2. Pin Configuration of AH266 (Top View)
Pin Description
Pin Number
Pin Name
Function
1
VCC
Supply voltage
2
DO
Output 1
3
DOB
Output 2
4
GND
Ground
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH266
Functional Block Diagram
VCC
1
2
DO
Over Temperature
Protection
Regulator
3
Hall
Sensor
Schmitt
Trigger
Amplifier
DOB
Output
Driver
4
GND
Figure 3. Functional Block Diagram of AH266
Ordering Information
AH266
-
Circuit Type
E1: Lead Free
Package
Z4: TO-94 (SIP-4L)
Magnetic Characteristics
A: 10 to 70Gauss
B: 100Gauss
Package
Temperature Range
TO-94
-20 to 85 oC
Part Number
Marking ID
Packing Type
AH266Z4-AE1
AH266Z4-E1
Bulk
AH266Z4-BE1
AH266Z4-E1
Bulk
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH266
Absolute Maximum Ratings (Note 1)
(TA=25oC)
Parameter
Symbol
Value
Unit
Supply Voltage
VCC
30
V
Reverse Protection Voltage
VRCC
-30
V
B
Unlimited
Gauss
400 (Note 2)
mA
600
mA
800
mA
PD
550
mW
Die to atmosphere
θJA
227
oC/W
Die to package case
θJC
49
oC/W
TSTG
-50 to 150
oC
300
V
Magnetic Flux Density
Continuous
Output Current
IO
Hold
Peak (Start up)
Power Dissipation
Thermal Resistance
Storage Temperature
ESD (Machine Model)
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect
device reliability.
Note 2: Continuos output current is 200mA at 85oC.
Recommended Operating Conditions
Parameter
Supply Voltage
Operating Ambient Temperature
Symbol
Min
Max
VCC
5
28
V
85
o
TA
-20
Feb. 2007 Rev. 1. 1
Unit
C
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH266
Electrical Characteristics
(TA=25oC, VCC=24V, unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VCC=5V, IO=100mA
0.8
1.1
V
Output Saturation Voltage
VSAT1
IO=500mA
1.1
1.5
V
Output Saturation Voltage
VSAT2
IO=300mA
0.9
1.25
V
Low Supply Voltage
VCE
Output Leakage Current
IOL
VDO, VDOB=24V
0.1
10
µA
Supply Current
ICC
VCC=24V, Output Open
3.5
6
mA
tr
RL=820Ω, CL=20pF
3.0
10
µs
Output Fall Time
tf
RL=820Ω, CL=20pF
0.3
1.5
µs
Switch Time Differential
∆t
RL=820Ω, CL=20pF
3.0
10
µs
Output Rise Time
Output Zener Breakdown Voltage
VZO
61
V
Magnetic Characteristics
(TA=25oC)
Parameter
Symbol
BOP
Operating Point
Grade
Min
A
10
Typ
B
BRP
Releasing Point
Hysteresis
A
-70
B
-100
Max
Unit
70
Gauss
100
Gauss
-10
Gauss
Gauss
80
BHYS
Gauss
VDO (V)
Off-state
High
BHYS
Turn off
Turn on
Low
VSAT
On-state
N
BRP
0
BOP
S
Magnetic Flux Density (Gauss)
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH266
Magnetic Characteristics (Continued)
+24V
AH266
S
VCC
Marking Side
DO DOB GND
1
2
4
3
DO (VOUT1)
R1
820Ω
R2
N
DOB (VOUT2)
820Ω
C1
C2
20pF 20pF
Figure 4. Basic Test Circuit
DO (V)
DOB (V)
16
16
VCC
14
14
12
12
10
10
8
8
6
6
4
4
2
-40
-20
0
VSAT
20
2
VSAT
40
-40
Magnetic Flux Density B (Gauss)
VCC
-20
0
20
40
Magnetic Flux Density B (Gauss)
Figure 5. VDO vs. Magnetic Flux Density
Figure 6. VDOB vs. Magnetic Flux Density
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH266
Typical Performance Characteristics
80
4.0
3.6
60
3.2
o
TA=25 C
BOP/BRP/BHYS (GS)
ICC (mA)
2.8
2.4
2.0
1.6
1.2
0.8
40
BOP
BRP
BHYS
20
0
o
TA=25 C
-20
0.4
-40
0.0
0
5
10
15
20
5
25
10
15
20
25
VCC (V)
VCC (V)
Figure 7. ICC vs. VCC
Figure 8. BOP/BRP/BHYS vs. VCC
800
80
60
PD (mW)
BOP/BRP/BHYS (GS)
600
40
BOP
BRP
BHYS
VCC=24V
20
0
400
200
-20
-40
-20
0
20
40
60
0
-25
80
0
25
50
75
100
125
150
o
o
TA ( C)
TA ( C)
Figure 9. BOP/BRP/BHYS vs. Ambient Temperature
Figure 10. PD vs. Ambient Temperature
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH266
Typical Performance Characteristics (Continued)
6
1200
VCC=4V
VCC=14V
VCC=24V
5
1100
VCC=24V
IO=300mA
1000
VSAT (mV)
ICC (mA)
4
3
900
800
2
700
1
600
0
-20
0
20
40
60
500
-20
80
o
0
20
40
60
80
o
TA ( C)
TA ( C)
Figure 11. ICC vs. Ambient Temperature
Figure 12. VSAT vs. Ambient Temperature
500
450
o
400
TA=25 C
IO(max) (mA)
350
300
250
200
150
100
50
0
5
10
15
20
25
VCC (V)
Figure 13. IO(max) vs. VCC
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH266
Typical Applications
D1
AH266
COIL1
VCC
DO
1
2
COIL2
DOB GND
4
3
VCC
Z1
Z2
Z1, Z2: Zener diode, 2*VCC≤VZ≤60V
Figure 14. Typical Application Circuit with D1
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH266
Mechanical Dimensions
TO-94
0.500(0.020)
0.700(0.028)
3.780(0.149)
4.080(0.161)
Unit: mm(inch)
45°TYP
1.400(0.055)
1.800(0.071)
0.700(0.028)
0.900(0.035)
4.980(0.196)
5.280(0.208)
0.360(0.014)
0.510(0.020)
1.850(0.073)
1.250(0.050)
Hall Sensor Location
0.380(0.015)
0.550(0.022)
0.360(0.014)
0.500(0.020)
14.900(0.587)
15.300(0.602)
1.270(0.050) TYP
3.710(0.146)
3.910(0.154)
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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