Rohm DTD513ZM 500ma / 12v low vce (sat) digital transistors (with built-in resistors) Datasheet

500mA / 12V Low VCE (sat) Digital transistors
(with built-in resistors)
DTD513ZE / DTD513ZM
zDimensions (Unit : mm)
zApplications
Inverter, Interface, Driver
DTD513ZE
0.7
1.6
0.55
0.3
0.8
(2)
1.6
(3)
(1)
0.2
0.2
0.15
0.5 0.5
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.1Min.
zFeature
1) VCE (sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of
almost completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
1.0
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : Y21
1.2
0.32
0.2
DTD513ZM
0.8
1.2
(3)
0.22
(1)(2)
0.4 0.4
0.2
zStructure
NPN epitaxial plannar silicon transistor
(Resistor built-in type)
0.13
0.5
0.8
(1) IN
(2) GND
(3) OUT
VMT3
Each lead has same dimensions
Abbreviated symbol : Y21
zPackaging specifications
Package
EMT3
VMT3
Packaging type
Taping
Taping
TL
T2L
3000
8000
Code
Part No.
Basic ordering
unit (pieces)
−
DTD513ZE
−
DTD513ZM
zAbsolute maximum ratings (Ta=25°C)
Symbol
Parameter
zInner circuit
Limits
DTD513ZE DTD513ZM
Unit
OUT
R1
IN
Supply voltage
VCC
12
V
Input voltage
VIN
−5 to +10
V
500
mA
Collector current
∗1
IC (max)
Power dissipation
∗2
PD
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
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c 2009 ROHM Co., Ltd. All rights reserved.
○
R2
GND
OUT
IN
GND
R1=1.0kΩ / R2=10kΩ
1/2
2009.05 - Rev.B
DTD513ZE / DTD513ZM
Data Sheet
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
VI(off)
−
−
0.3
VI(on)
2.5
−
−
VO(on)
−
60
300
mV
IO/II=100mA / 5mA
II
−
−
6.4
mA
VI= 5V
IO(off)
−
−
0.5
µA
VCC= 12V, VI=0V
DC current gain
GI
140
−
−
−
Transition frequency ∗
fT
−
260
−
MHz
VCE= 10V, IE= −5mA, f=100MHz
Input resistance
R1
0.7
1.0
1.3
kΩ
−
Resistance ratio
R2/R1
8.0
10
12
−
−
Input voltage
Output voltage
Input current
Output current
Unit
Conditions
VCC= 5V, IO= 100µA
V
VO= 0.3V, IO= 20mA
VO= 2V, IO= 100mA
∗ Characteristics of built-in transistor.
zElectrical characteristics (Ta=25°C)
100
Ta=-40°C
25°C
OUTPUT CURRENT : I O (mA)
INPUT VOLTAGE : V I (on) (V)
10
85°C
125°C
1
V0=0.3V
0.1
0.1
1
10
100
VCC = 5V
10
Ta=125°C
85°C
1
25°C
-40°C
0.1
0
1000
0.5
25°C
-40°C
100
2
IO/II=20
VO= 2V
OUTPUT VOLTAGE : VO(on) (V)
Ta=125°C
85°C
DC CURENT GAIN : G I
1.5
1
1000
10
1
0.1
1
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (mA)
Ta=125°C
85°C
0.1
25°C
-40°C
0.01
1
10
100
OUTPUT CURENT : IO (mA)
1000
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1
10
100
1000
OUOPUT CURRENT : IO (mA)
2/2
2009.05 - Rev.B
Notice
Notes
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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