500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors) DTD513ZE / DTD513ZM zDimensions (Unit : mm) zApplications Inverter, Interface, Driver DTD513ZE 0.7 1.6 0.55 0.3 0.8 (2) 1.6 (3) (1) 0.2 0.2 0.15 0.5 0.5 EMT3 JEITA No. (SC-75A) JEDEC No. <SOT-416> 0.1Min. zFeature 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 4) Only the on / off conditions need to be set for operation, making the device design easy. 1.0 (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : Y21 1.2 0.32 0.2 DTD513ZM 0.8 1.2 (3) 0.22 (1)(2) 0.4 0.4 0.2 zStructure NPN epitaxial plannar silicon transistor (Resistor built-in type) 0.13 0.5 0.8 (1) IN (2) GND (3) OUT VMT3 Each lead has same dimensions Abbreviated symbol : Y21 zPackaging specifications Package EMT3 VMT3 Packaging type Taping Taping TL T2L 3000 8000 Code Part No. Basic ordering unit (pieces) − DTD513ZE − DTD513ZM zAbsolute maximum ratings (Ta=25°C) Symbol Parameter zInner circuit Limits DTD513ZE DTD513ZM Unit OUT R1 IN Supply voltage VCC 12 V Input voltage VIN −5 to +10 V 500 mA Collector current ∗1 IC (max) Power dissipation ∗2 PD 150 mW Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C ∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ R2 GND OUT IN GND R1=1.0kΩ / R2=10kΩ 1/2 2009.05 - Rev.B DTD513ZE / DTD513ZM Data Sheet zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. VI(off) − − 0.3 VI(on) 2.5 − − VO(on) − 60 300 mV IO/II=100mA / 5mA II − − 6.4 mA VI= 5V IO(off) − − 0.5 µA VCC= 12V, VI=0V DC current gain GI 140 − − − Transition frequency ∗ fT − 260 − MHz VCE= 10V, IE= −5mA, f=100MHz Input resistance R1 0.7 1.0 1.3 kΩ − Resistance ratio R2/R1 8.0 10 12 − − Input voltage Output voltage Input current Output current Unit Conditions VCC= 5V, IO= 100µA V VO= 0.3V, IO= 20mA VO= 2V, IO= 100mA ∗ Characteristics of built-in transistor. zElectrical characteristics (Ta=25°C) 100 Ta=－40°C 25°C OUTPUT CURRENT : I O (mA) INPUT VOLTAGE : V I (on) (V) 10 85°C 125°C 1 V0=0.3V 0.1 0.1 1 10 100 VCC = 5V 10 Ta=125°C 85°C 1 25°C －40°C 0.1 0 1000 0.5 25°C －40°C 100 2 IO/II=20 VO= 2V OUTPUT VOLTAGE : VO(on) (V) Ta=125°C 85°C DC CURENT GAIN : G I 1.5 1 1000 10 1 0.1 1 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (mA) Ta=125°C 85°C 0.1 25°C －40°C 0.01 1 10 100 OUTPUT CURENT : IO (mA) 1000 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1 10 100 1000 OUOPUT CURRENT : IO (mA) 2/2 2009.05 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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