SRAM MT5C2564 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT (Top View) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88681 • SMD 5962-88545 • MIL-STD-883 24-Pin DIP (C) (300 MIL) A1 A0 NC Vcc NC 28-Pin LCC (EC) 3 2 1 28 27 FEATURES • • • • High Speed: 15, 20, 25, 35, 45, 55, and 70 Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process • Single +5V (+10%) Power Supply • Easy memory expansion with CE\ • All inputs and outputs are TTL compatible OPTIONS MARKING • Timing 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access -15 -20 -25 -35 -45 -55* -70* • Package(s) Ceramic DIP (300 mil) Ceramic LCC Ceramic Flatpack C EC F 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 Vcc A15 A14 A13 A12 A11 A10 DQ4 DQ3 DQ2 DQ1 WE\ A2 A3 A4 A5 A6 A7 A8 A9 CE\ 26 25 24 23 22 21 20 19 18 4 5 6 7 8 9 10 11 12 A15 A14 A13 A12 A11 A10 DQ4 DQ3 DQ2 13 14 15 16 17 DQ1 WE\ NC Vss NC A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 CE\ Vss 28-Pin Flat Pack (F) NC A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 CE\ NC Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc A15 A14 A13 A12 A11 A10 NC NC DQ3 DQ2 DQ1 DQ0 WE\ No. 106 No. 204 GENERAL DESCRIPTION • Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT • 2V data retention/low power The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) on all organizations. This enhancement can place the outputs in High-Z for additional flexibility in system design. The x4 configuration features common data input and output. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ goes LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. These devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. L *Electrical characteristics identical to those provided for the 45ns access devices. For more products and information please visit our web site at www.austinsemiconductor.com MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 SRAM MT5C2564 Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM VCC GND A0 A1 A4 A5 A13 I/O CONTROL A3 DQ4 ROW DECODER A2 262,144-BIT MEMORY ARRAY DQ1 A14 A15 CE\ COLUMN DECODER WE\ A6 A7 A8 A9 A10 A11 A12 POWER DOWN TRUTH TABLE MODE STANDBY READ WRITE MT5C2564 Rev. 3.1 6/05 CE\ H L L WE\ X H L DQ HIGH-Z Q D POWER STANDBY ACTIVE ACTIVE Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 SRAM MT5C2564 Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Voltage on Any Pin Relative to Vss..................................-0.5V to +7V Voltage on Vcc Supply Relative to Vss.............................-0.5V to +7V Storage Temperature......................................................-65oC to +150oC Power Dissipation..............................................................................1W Short Circuit Output Current.........................................................50mA Lead Temperature (soldering 10 seconds)....................................+260oC Junction Temperature..................................................................+175oC ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TC < 125oC; VCC = 5V +10%) DESCRIPTION Input High (Logic 1) Voltage CONDITIONS SYM MIN MAX UNITS NOTES VIH 2.2 VCC+0.5 V 1 VIL -0.5 0.8 V 1, 2 0V<VIN<VCC ILI -10 10 µA Output(s) disabled 0V<VOUT<VCC ILO -10 10 µA Output High Voltage IOH=-4.0mA VOH 2.4 Output Low Voltage IOL=8.0mA VOL Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current PARAMETER Power Supply Current: Operating Power Supply Current: Standby CONDITIONS CE\ < VIL; VCC = MAX f = MAX = 1/tRC (MIN) Output Open 0.4 V 1 V 1 SYM -15 -20 MAX -25 -35 -45 Icc 165 150 140 120 120 mA ISBT2 45 45 40 25 25 mA ISBC2 20 20 20 20 20 mA ISBC2 4 4 4 4 4 mA UNITS NOTES 3 CE\ > VIH; All Other Inputs < VIL or > VIH, VCC = MAX f = 0 Hz CE\ > VCC -0.2V; VCC = MAX VIL < VSS +0.2V VIH > VCC -0.2V; f = 0 Hz "L" Version Only CAPACITANCE DESCRIPTION Input Capacitance Output Capacitance MT5C2564 Rev. 3.1 6/05 CONDITIONS o TA = 25 C, f = 1MHz VCC = 5V SYM MAX UNITS NOTES CI 10 pF 4 CO 12 pF 4 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 SRAM MT5C2564 Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55oC < TC < 125oC; VCC = 5V +10%) DESCRIPTION READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Chip Enable to power-up time Chip disable to power-down time WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z MT5C2564 Rev. 3.1 6/05 -15 -20 -25 -35 -45 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES tRC tAA tACE tOH tLZCE tHZCE tPU tPD 15 tWC tCW tAW tAS tAH tWP tDS tDH 15 12 12 0 2 12 7 0 0 0 tLZWE tHZWE 20 15 15 3 3 25 20 20 3 3 8 0 3 3 10 0 15 7 3 3 0 10 11 7 6, 7 4 4 20 ns ns ns ns ns ns ns ns ns ns 7 6, 7 3 3 0 20 0 35 35 30 30 0 5 30 20 0 0 0 45 ns ns ns ns ns ns ns ns 45 45 20 25 25 18 18 0 2 17 12 0 0 0 45 35 35 10 20 20 15 15 0 2 15 10 0 0 0 35 25 25 20 45 40 40 0 5 40 20 0 0 0 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 SRAM MT5C2564 Austin Semiconductor, Inc. AC TEST CONDITIONS Input pulse levels ...................................... Vss to 3.0V Input rise and fall times ......................................... 5ns Input timing reference levels ................................ 1.5V Output reference levels ....................................... 1.5V Output load ................................. See Figures 1 and 2 167Ω Q 30pF 167Ω VTH = 1.73V Q Fig. 2 Output Load Equivalent Fig. 1 Output Load Equivalent allowing for actual tester RC time constant. At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE and tHZOE is less than tLZOE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enable is held in its active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = Read Cycle Time. 12. Chip enable (CE\) and write enable (WE\) can initiate and terminate a WRITE cycle. NOTES 1. 2. 3. 4. 5. 6. VTH = 1.73V 5pF 7. All voltages referenced to VSS (GND). -3V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. t RC (MIN) This parameter is guaranteed but not tested. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. tLZCE, tLZWE, tLZOE, tHZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured ±200mV typical from steady state voltage, DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) DESCRIPTION VCC for Retention Data CONDITIONS Data Retention Current CE\ > (VCC - 0.2V) VCC = 2V VIN > (VCC - 0.2V) or < 0.2V VCC = 3V Chip Deselect to Data Retention Time Operation Recovery Time SYM MIN MAX UNITS VDR 2 --- V 1 mA 2 mA --- ns 4 ns 4, 11 ICCDR tCDR 0 tR tRC NOTES LOW Vcc DATA RETENTION WAVEFORM DATA RETENTION MODE VCC CE\ 4.5V VIH VIL 1234 12345678 123 12345678 123 1234 12345678 123 1234 12345678 123 1234 VDR > 2V t CDR 4.5V tR V DR 12345678 1234 12 12345678 1234 12 12345678 1234 12 12345678 1234 12 123 123 123 123 DON’T CARE 1234 1234 1234 1234UNDEFINED MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 SRAM MT5C2564 Austin Semiconductor, Inc. READ CYCLE NO. 1 8, 9 ttRC RC ADDRESS VALID ttAA AA ttOH OH DQ PREVIOUS DATA VALID DATA VALID READ CYCLE NO. 2 7, 8, 10 ttRC RC CE\ ttLZCE LZCE tACE tACE t HZCE tHZCE DQ DATA VALID ttPU PU ttPD PD Icc MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 SRAM MT5C2564 Austin Semiconductor, Inc. WRITE CYCLE NO. 1 12 (Chip Enabled Controlled) t WC tWC ADDRESS tAW tAW ttAS AS t AH tAH tCW tCW CE\ t WP tWP1 123456789012345678901 1 1 WE\ 123456789012345678901 1123456789012345678901234567890121234567890 1123456789012345678901234567890121234567890 t DH tDH ttDS DS D DATA VAILD Q HIGH Z WRITE CYCLE NO. 2 7, 12 (Write Enabled Controlled) tWC tWC ADDRESS tAW tAW 12345678901234567 12 12 12345678901234567 12345678901234567 121 CE\ ttAS AS WE\ ttAH AH tCW tCW 12345678901234567890123 1 1212345678901234567890123 112345678901234567890123 t WP tWP1 123456789 123456789 123456789 tDS 1234567890123456 11234 1 tHZWE 1234567890123456 11234 1 11234 1 Q 1234567890123456 11234 1 1234567890123456 D DATA VALID HIGH-Z t DH tDH 12123456 1 tLZWE1234 1234 12123456 1 1234 12123456 1 1234 12123456 1 123 123 DON’T CARE 123 1234 1234 1234 1234 UNDEFINED NOTE: Output enable (OE\) is inactive (HIGH). MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 SRAM MT5C2564 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #106 (Package Designator C) SMD #5962-88681, Case Outline L D A Q L Pin 1 S1 e b b2 E NOTE 0o to 15o c eA SMD SPECIFICATIONS MIN MAX SYMBOL A --0.200 b 0.014 0.026 b2 0.045 0.065 c 0.008 0.018 D --1.280 E 0.220 0.310 eA 0.300 BSC e 0.100 BSC L 0.125 0.200 Q 0.015 0.060 S1 0.005 --NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. *All measurements are in inches. MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 SRAM MT5C2564 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #204 (Package Designator EC) SMD# 5962-88681, Case Outline X D1 B2 D2 L2 e E3 E E1 E2 h x 45o D L hx45o B1 D3 A A1 SYMBOL A A1 B1 B2 D D1 D2 D3 E E1 E2 E3 e h L L2 SMD SPECIFICATIONS MIN MAX 0.060 0.120 0.050 0.088 0.022 0.028 0.072 REF 0.342 0.358 0.200 BSC 0.100 BSC --0.358 0.540 0.560 0.400 BSC 0.200 BSC --0.558 0.050 BSC 0.040 REF 0.045 0.055 0.075 0.095 NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. *All measurements are in inches. MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 SRAM MT5C2564 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case (Package Designator F) SMD 5962-88681 & 5962-88545, Case Outline Y e b D S Top View E L A c Q E2 E3 SYMBOL A b c D E E2 E3 e L Q S SMD SPECIFICATIONS MIN MAX 0.090 0.130 0.015 0.022 0.004 0.009 --0.740 0.380 0.420 0.180 --0.030 --0.050 BSC 0.250 0.370 0.026 0.045 0.000 --- NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10 SRAM MT5C2564 Austin Semiconductor, Inc. ORDERING INFORMATION EXAMPLE: MT5C2564EC-45/XT EXAMPLE: MT5C2564C-20L/IT Device Number Package Speed Options** Process Type ns Device Number Package Speed Options** Process Type ns MT5C2564 C -15 L /* MT5C2564 EC -15 L /* MT5C2564 C -20 L /* MT5C2564 EC -20 L /* MT5C2564 C -25 L /* MT5C2564 EC -25 L /* MT5C2564 C -35 L /* MT5C2564 EC -35 L /* MT5C2564 C -40 L /* MT5C2564 EC -40 L /* MT5C2564 C -55 L /* MT5C2564 EC -55 L /* MT5C2564 C -70 L /* MT5C2564 EC -70 L /* EXAMPLE: MT5C2564F-35/883C Device Number Package Speed Options** Process ns Type MT5C2564 F -15 L /* MT5C2564 F -20 L /* MT5C2564 F -25 L /* MT5C2564 F -35 L /* MT5C2564 F -40 L /* MT5C2564 F -55 L /* MT5C2564 F -70 L /* *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing -40oC to +85oC -55oC to +125oC -55oC to +125oC ** OPTIONS L = 2V Data Retention/Low Power MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11 SRAM Austin Semiconductor, Inc. MT5C2564 ASI TO DSCC PART NUMBER CROSS REFERENCE* ASI Package Designator C ASI Package Designator EC ASI Part # MT5C2564C-20/883C MT5C2564C-25/883C MT5C2564C-35/883C MT5C2564C-45/883C MT5C2564C-55/883C MT5C2564C-70/883C SMD Part # 5962-8868106LA 5962-8868105LA 5962-8868101LA 5962-8868102LA 5962-8868103LA 5962-8868104LA ASI Part # MT5C2564EC-20/883C MT5C2564EC-25/883C MT5C2564EC-35/883C MT5C2564EC-45/883C MT5C2564EC-55/883C MT5C2564EC-70/883C SMD Part # 5962-8868106XA 5962-8868105XA 5962-8868101XA 5962-8868102XA 5962-8868103XA 5962-8868104XA MT5C2564C-35L/883C MT5C2564C-45L/883C MT5C2564C-55L/883C MT5C2564C-70L/883C 5962-8854501LA 5962-8854502LA 5962-8854503LA 5962-8854504LA MT5C2564EC-35L/883C MT5C2564EC-45L/883C MT5C2564EC-55L/883C MT5C2564EC-70L/883C 5962-8854501XA 5962-8854502XA 5962-8854503XA 5962-8854504XA ASI Package Designator F ASI Part # MT5C2564F-20/883C MT5C2564F-25/883C MT5C2564F-35/883C MT5C2564F-45/883C MT5C2564F-55/883C MT5C2564F-70/883C SMD Part # 5962-8868106YA 5962-8868105YA 5962-8868101YA 5962-8868102YA 5962-8868103YA 5962-8868104YA MT5C2564F-35L/883C MT5C2564F-45L/883C MT5C2564F-55L/883C MT5C2564F-70L/883C 5962-8854501YA 5962-8854502YA 5962-8854503YA 5962-8854504YA * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. MT5C2564 Rev. 3.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 12