CNY75A/B/C/GA/GB/GC Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES B 6 C 5 E 4 • Isolation materials according to UL94-VO • Pollution degree IEC 60664) 2 (DIN/VDE 0110/resp. • Climatic classification 55/100/21 (IEC 60068 part 1) 1 2 3 • Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection A (+) C (-) NC • Low temperature coefficient of CTR V • CTR offered in 3 groups D E 17186 • Rated isolation voltage (RMS VIOWM = 600 VRMS (848 V peak) • Rated recurring VIORM = 600 VRMS • Rated impulse VIOTM = 6 kVpeak DESCRIPTION The CNY75A/B/C/GA/GB/GC consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6 pin plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. VDE STANDARDS These couplers perform safety functions according to the following equipment standards: • DIN EN 60747-5-5 Optocoupler for electrical safety requirements • VDE 0804 Telecommunication apparatus and data processing electronic and voltage DC) voltage (repetitive) (transient overvoltage) • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV • Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 275 • Thickness through insulation ≥ 0.75 mm • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Switch-mode power supplies • IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) • IEC 60065 Safety for mains-operated household apparatus peak includes related • Line receiver • Computer peripheral interface • Microprocessor system interface • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5. AGENCY APPROVALS • UL1577, file no. E76222 system code A, double protection • BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), certificate number 7081 and 7402 • DIN EN 60747-5-5 • FIMKO (SETI): EN 60950, certificate no. 12399 www.vishay.com 254 For technical questions, contact: [email protected] Document Number: 83536 Rev. 1.7, 08-May-08 CNY75A/B/C/GA/GB/GC Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors ORDER INFORMATION PART REMARKS CNY75A CTR 63 to 125 %, DIP-6 CNY75B CTR 100 to 200 %, DIP-6 CNY75C CTR 160 to 320 %, DIP-6 CNY75GA CTR 63 to 125 %, DIP-6 CNY75GB CTR 100 to 200 %, DIP-6 CNY75GC CTR 160 to 320 %, DIP-6 Note G = leadform 10.16 mm; G is not marked on the body. ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5.0 V Forward current IF 60 mA INPUT tp ≤ 10 µs Forward surge current Power dissipation Junction temperature IFSM 3.0 A Pdiss 100 mW Tj 125 °C V OUTPUT Collector base voltage VCBO 90 Collector emitter voltage VCEO 90 V Emitter collector voltage VECO 7.0 V mA Collector current tp/T = 0.5, tp ≤ 10 ms Collector peak current Power dissipation Junction temperature IC 50 ICM 100 mA Pdiss 150 mW Tj 125 °C COUPLER AC isolation test voltage (RMS) VISO 3750 VRMS Total power dissipation t = 1 min Ptot 250 mW Ambient temperature range Tamb - 55 to + 100 °C Storage temperature range Tstg - 55 to + 125 °C Tsld 260 °C 2 mm from case, t ≤ 10 s Soldering temperature (2) Note (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 1.25 1.6 V 10 µA INPUT Forward voltage IF = 50 mA VF Reverse current VR = 6 V IR VR = 0 V, f = 1 MHz Cj Junction capacitance Document Number: 83536 Rev. 1.7, 08-May-08 For technical questions, contact: [email protected] 50 pF www.vishay.com 255 CNY75A/B/C/GA/GB/GC Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT OUTPUT IC = 100 µA VCBO 90 Collector emitter voltage Collector base voltage IC = 1 mA VCEO 90 V Emitter collector voltage IE = 100 µA VECO 7 V VCE = 20 V, IF = 0 A ICEO 150 nA Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz f = 1 MHz Ck 0.3 pF Collector emitter leakage current V COUPLER Coupling capacitance Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION VCE = 5 V, IF = 1 mA IC/IF VCE = 5 V, IF = 10 mA PART SYMBOL MIN. TYP. MAX. UNIT CNY75GA CTR 15 % CNY75GB CTR 30 % CNY75GC CTR 60 CNY75GA CTR 63 125 % CNY75GB CTR 100 200 % CNY75GC CTR 160 320 % MAX UNIT % SWITCHING CHARACTERISTICS PARAMETER Current time Delay time Rise time Fall time Storage time Turn-on time Turn-off time www.vishay.com 256 TEST CONDITION VCC = 5 V, RL = 100 Ω (see figure 3) VCC = 5 V, RL = 100 Ω (see figure 3) VCC = 5 V, RL = 100 Ω (see figure 3) VCC = 5 V, RL = 100 Ω (see figure 3) VCC = 5 V, RL = 100 Ω (see figure 3) VCC = 5 V, RL = 100 Ω (see figure 3) VCC = 5 V, RL = 100 Ω (see figure 3) PART SYMBOL MIN TYP. CNY75GA IF 10 mA CNY75GB IF 10 mA CNY75GC IF 10 mA CNY75GA td 2 µs CNY75GB td 2.5 µs CNY75GC td 2.8 µs CNY75GA tr 2.5 µs CNY75GB tr 3 µs CNY75GC tr 4.2 µs CNY75GA tf 2.7 µs CNY75GB tf 3.7 µs CNY75GC tf 4.7 µs CNY75GA ts 0.3 µs CNY75GB ts 0.3 µs CNY75GC ts 0.3 µs CNY75GA ton 4.5 µs CNY75GB ton 5.5 µs CNY75GC ton 7 µs CNY75GA toff 3 µs CNY75GB toff 4 µs CNY75GC toff 5 µs For technical questions, contact: [email protected] Document Number: 83536 Rev. 1.7, 08-May-08 CNY75A/B/C/GA/GB/GC Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER Turn-on time TEST CONDITION PART CNY75GA ton 10 µs VCC = 5 V, RL = 1 kΩ (see figure 4) CNY75GB ton 16.5 µs CNY75GC ton 11 µs CNY75GA toff 25 µs CNY75GB toff 20 µs CNY75GC toff 37.5 µs VCC = 5 V, RL = 1 kΩ (see figure 4) Turn-off time SYMBOL MIN TYP. MAX UNIT MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF 130 mA Pdiss 265 mW VIOTM 6 kV Tsi 150 °C INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note According DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 1.6 kV Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 6.0 kV Vpd 1.3 kV VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb ≤ 100 °C RIO 1011 Ω VIO = 500 V, Tamb ≤ 150 °C (construction test only) RIO 109 Ω Ptot - Total Power Dissipation (mW) Insulation resistance 275 TYP. MAX. UNIT VIOTM 250 225 t1, t2 t3 , t4 ttest tstres Psi (mW) 200 175 150 = 1 to 10 s =1s = 10 s = 12 s VPd 125 100 VIOWM VIORM Isi (mA) 75 50 25 0 0 0 95 10923 25 50 75 100 125 150 Tamb - Ambient Temperature (°C) t3 ttest t4 175 13930 t1 tTr = 60 s t2 t stres t Fig. 1 - Derating Diagram Document Number: 83536 Rev. 1.7, 08-May-08 Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN 60747-5-5/DIN EN 60747-; IEC60747 For technical questions, contact: [email protected] www.vishay.com 257 CNY75A/B/C/GA/GB/GC Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors TYPICAL CHARACTERISTICS 300 10000 ICEO - Collector Dark Current, with Open Base (nA) Ptot - Total Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified Coupled device 250 200 Phototransistor 150 IR-diode 100 50 96 11700 40 80 120 Tamb - Ambient Temperature (°C) Fig. 3 - Total Power Dissipation vs. Ambient Temperature 100 10 50 75 100 Fig. 6 - Collector Dark Current vs. Ambient Temperature 1 ICB - Collector Base Current (mA) 100 10 1 VCB = 5 V 0.1 0.01 0.001 0.1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 25 Tamb - Ambient Temperature (°C) 95 11038 1000 IF - Forward Current (mA) 1000 1 0 0 0 VCE = 30 V IF = 0 VF - Forward Voltage (V) 100 10 95 11039 I F - Forward Current (mA) Fig. 7 - Collector Base Current vs. Forward Current 100 1.5 1.4 1.3 VCE = 5 V I F = 10 mA I C - Collector Current (mA) CTR rel - Relative Current Transfer Ratio Fig. 4 - Forward Current vs. Forward Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 96 11918 Tamb - Ambient Temperature (°C) Fig. 5 - Relative Current Transfer Ratio vs. Ambient Temperature www.vishay.com 258 VCE = 5 V 10 1 0.1 0.01 0.1 95 11040 1 10 100 IF - Forward Current (mA) Fig. 8 - Collector Current vs. Forward Current For technical questions, contact: [email protected] Document Number: 83536 Rev. 1.7, 08-May-08 CNY75A/B/C/GA/GB/GC Optocoupler, Phototransistor Output, with Base Connection 1.0 100 I F = 50 mA CTR = 50 % used 20 mA 10 10 mA 5 mA 1 2 mA 1 mA VCEsat - Collector Emitter Saturation Voltage (V) I C - Collector Current (mA) Vishay Semiconductors 0.8 CNY75A used 0.6 0.4 20 % used 0.2 10 % used CNY75A 0.1 0.1 0 1 100 10 I F = 50 mA 20 mA 10 mA 10 5 mA 2 mA 1 1 mA CNY75B 0.1 0.1 1 100 10 VCE - Collector Emitter Voltage (V) Fig. 10 - Collector Current vs. Collector Emitter Voltage 100.0 I C - Collector Current (mA) I F = 50 mA 20 mA 10 mA 10.0 5 mA 2 mA 1.0 1 mA CNY75C 0.1 0.1 96 11919 1.0 10.0 100.0 VCE - Collector Emitter Voltage (V) Fig. 11 - Collector Current vs. Collector Emitter Voltage Document Number: 83536 Rev. 1.7, 08-May-08 Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current VCEsat - Collector Emitter Saturation Voltage (V) I C - Collector Current (mA) 100 100 10 I C - Collector Current (mA) 95 11034 1.0 CTR = 50 % 0.8 CNY75B 0.6 20 % 0.4 0.2 10 % 0 1 100 10 95 11043 IC - Collector Current (mA) Fig. 13 - Collector Emitter Saturation Voltage vs. Collector Current VCEsat - Collector Emitter Saturation Voltage (V) Fig. 9 - Collector Current vs. Collector Emitter Voltage 95 11042 1 VCE - Collector Emitter Voltage (V) 95 11041 1.0 CTR = 50 % 0.8 CNY75C 0.6 0.4 0.2 20 % 10 % 0 1 95 11044 100 10 IC - Collector Current (mA) Fig. 14 - Collector Emitter Saturation Voltage vs. Collector Current For technical questions, contact: [email protected] www.vishay.com 259 CNY75A/B/C/GA/GB/GC Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors CTR - Current Transfer Ratio (%) 1000 800 600 400 200 0.1 1 10 IC - Collector Current (mA) 95 11035 CTR - Current Transfer Ratio (%) 1000 CNY75A(G) VCE = 5 V 100 10 1 1 10 100 IF - Forward Current (mA) 95 11036 CTR - Current Transfer Ratio (%) 1000 CNY75B(G) VCE = 5 V 100 10 1 95 11045 1 10 100 IF - Forward Current (mA) Fig. 17 - Current Transfer Ratio vs. Forward Current www.vishay.com 260 100 10 1 0.1 1 100 10 IF - Forward Current (mA) Fig. 18 - Current Transfer Ratio vs. Forward Current 50 CNY75A(G) Saturated operation VS = 5 V R L = 1 kΩ 40 30 toff 20 10 ton 0 0 5 10 20 15 IF - Forward Current (mA) 95 11033 Fig. 16 - Current Transfer Ratio vs. Forward Current 0.1 CNY75C(G) VCE = 5 V 95 11046 Fig. 15 - DC Current Gain vs. Collector Current 0.1 1000 100 t on /toff - Turn-on/Turn-off Time (µs) 0 0.01 Fig. 19 - Turn-on/off Time vs. Forward Current t on / toff - Turn-on/Turn-off Time (µs) hFE - DC Current Gain VCE = 5 V 50 CNY75B(G) Saturated operation VS = 5 V R L = 1 kΩ 40 30 toff 20 10 ton 0 95 11048 0 5 10 15 20 IF - Forward Current (mA) Fig. 20 - Turn-on/off Time vs. Forward Current For technical questions, contact: [email protected] Document Number: 83536 Rev. 1.7, 08-May-08 CNY75A/B/C/GA/GB/GC 50 toff CNY75C(G) Saturated operation VS = 5 V R L = 1 kΩ 40 30 20 10 ton 0 0 5 10 20 15 IF - Forward Current (mA) 95 11050 t on /t off - Turn-on/Turn-off Time (µs) 20 ton 10 ton 10 toff 5 0 0 2 4 6 8 10 IC - Collector Current (mA) Fig. 24 - Turn-on/off Time vs. Collector Current UL logo toff XXXXX XXXXX Product code V D E VDE logo V XXXY 63 5 Plant code Package code Vishay logo 0 0 2 4 6 10 8 17936 Date code (year, week) IC - Collector Current (mA) 95 11032 Fig. 22 - Turn-on/off Time vs. Collector Current t on /t off - Turn-on/Turn-off Time (µs) CNY75C(G) Non-saturated operation VS = 5 V R L = 100 Ω 15 Customer code/ identification/ option CNY75A(G) Non-saturated operation VS = 5 V R L = 100 Ω Vishay Semiconductors 20 95 11049 Fig. 21 - Turn-on/off Time vs. Forward Current 15 t on /t off - Turn-on/Turn-off Time (µs) t on /t off - Turn-on/Turn-off Time (µs) Optocoupler, Phototransistor Output, with Base Connection Fig. 25 - Marking Example 20 CNY75B(G) Non-saturated operation VS = 5 V R L = 100 Ω 15 10 ton 5 toff 0 0 95 11047 2 4 6 8 10 IC - Collector Current (mA) Fig. 23 - Turn-on/off Time vs. Collector Current Document Number: 83536 Rev. 1.7, 08-May-08 For technical questions, contact: [email protected] www.vishay.com 261 CNY75A/B/C/GA/GB/GC Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 8.8 max. 7.62 ± 0.1 B 8.6 max. 0.3 A 3.3 0.5 min. 4.2 ± 0.1 6.4 max. 0.58 max. 0.3 max. 1.54 2.54 nom. 9 ± 0.6 0.4 B 5.08 nom. A Weight: ca. 0.50 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board 6 5 4 technical drawings according to DIN specifications 14770 1 2 3 8.8 max. 7.62 ± 0.1 8.6 max. 0.3 A B 3.3 5.08 max. 0.5 min. 4.2 ± 0.1 6.4 max. 0.58 max. 1.54 0.3 max. 10.16 ± 0.2 2.54 nom. 0.4 B 5.08 nom. A 6 5 4 Weight: ca. 0.50 g Creepage distance: > 8 mm Air path: > 8 mm after mounting on PC board technical drawings according to DIN specifications 1 2 3 www.vishay.com 262 14771 For technical questions, contact: [email protected] Document Number: 83536 Rev. 1.7, 08-May-08 CNY75A/B/C/GA/GB/GC Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 83536 Rev. 1.7, 08-May-08 For technical questions, contact: [email protected] www.vishay.com 263 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1